HA17384SPS-E [RENESAS]
1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, PDIP8, 6.30 X 9.60 MM, 2.54 MM PITCH, PLASTIC, DIP-8;
| 型号： | HA17384SPS-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, PDIP8, 6.30 X 9.60 MM, 2.54 MM PITCH, PLASTIC, DIP-8 开关 光电二极管 |
| 文件： | 总29页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA17384SPS/SRP, HA17384HPS/HRP,
HA17385HPS/HRP
High Speed Current Mode PWM Control IC
for Switching Power Supply
REJ03F0149-0300
(Previous: ADE-204-028B)
Rev.3.00
Jun 15, 2005
Description
The HA17384S/H and HA17385H are PWM control switching regulator IC series suitable for highspeed, current-mode
switching power supplies. With ICs from this series and a few external parts, a small, low cost flyback-transformer
switching power supply can be constructed, which facilitates good line regulation by current mode control.
Synchronous operation driven after an external signal can also be easily obtainech offers various applications such
as a power supply for monitors small multi-output power supply.
The IC series are composed of circuits required for a switching regula-voltage lockout (UVL), a
high precision reference voltage regulator (5.0 V ± 2%), a triangulgeneration, a high-gain
error amplifier, and as totem pole output driver circuit which direr MOSFETs found in main
switching devices. In addition, a pulse-by-pulse type, highmparator circuit with variable
detection level is incorporated which is required for curre
The HA17384SPS includes the above basic functo these basic functions, the H Series
incorporates thermal shut-down protection (TSion (OVP) functions, for configuration of
switching power supplies that meet the dema
Between the HA17384 and HA17385, oages differ as shown in the product lineup table.(See
next page.)
This IC is pin compatible with e by other companies in the electronics industry. However,
due to the characteristics of to achieve ICs that offer full compatibility in every detail.
Therefore, when using onanother manufacturer’s IC, it must be recognized that it has different
electrical characteristics, and confirm that there is no problem with the power supply (mounting) set
used.
Rev.3.00 Jun 15, 2005 page 1 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Functions
•
•
•
•
•
•
•
•
•
Under-voltage lockout system
Reference voltage regulator of 5.0 V ± 2%
Triangular wave (sawtooth) oscillator
Error amplifier
Totem pole output driver circuit (direct driving for power MOS FETs)
Current-detection comparator circuit for current mode
OVP function (over voltage protection) *1
TSD function (thermal shut-down protection) *1
Protect function by zener diode (between power input and GND)
Note: 1. H series only.
Features
•
•
High-safety UVL circuit is used (Both VIN and Vref are monitored)
High speed operation:
⎯ Current detection response time: 100 ns Typ
⎯ Maximum oscillation frequency: 500 kHz
•
•
Low standby current: 170 µA Typ
Wide range dead band time
(Discharge current of timing capacitance is constant 8.4 mA Typ)
Able to drive power MOSFET directly
(Absolute maximum rating of output current is ±1 A peak)
OVP function (over voltage protection) is included *1
(Output stops when FB terminal voltage is 7.0 V Ty
TSD function (thermal shut-down protection) is i
(Output stops when the temperature is 160°C
Zener protection is included
•
•
•
•
•
(Clamp voltage between VIN and GND
Wide operating temperature range:
⎯ Operating temperature: –20°
⎯ Junction temperature: 15
Notes: 1. H series only.
2. S series only.
Rev.3.00 Jun 15, 2005 page 2 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Product Lineup
Package
Additional Function
UVL Power Supply
Threshold Voltage
TSD
OVP
(Thermal shut-down
protection)
(Over voltage
protection)
DILP8 (DP-8B) SOP8 (FP-8DC)
VTH UVL (V) Typ
VTL UVL (V) Typ
HA17384SPS
HA17384HPS
HA17385HPS
HA17384SRP
HA17384HRP
HA17385HRP
–
–
16.0
10.0
8.4
7.6
Pin Arrangement
1
2
3
4
8
7
6
COMP
FB
Vref
VI
CS
RT/CT
(To
Pin Function
Pin No.
Symbol
nction
Note
1
2
3
4
5
6
7
8
COMP
FB
Err
OVP input pin
put pin
1
CS
RT/CT
GND
OUT
VIN
ing capacitance connect pin
tput pin
ly voltage input pin
Rece voltage 5V output pin
Vref
Note: 1. Overvoltage protection (OVP) input is usable only for the HA17384H and HA17385H.
Rev.3.00 Jun 15, 2005 page 3 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Block Diagram
0.8mA
UVL1
5V band
gap
H
COMP
1
2
3
4
8
Vref
reference
regulator
L
−
VH
VL
EA
+
UVL2
6.5V
1
OVP
latch
Vref
2
(2.5V)
Q
R
Vref > 4.7V
−
S
OVP
+
*
1
FB
7
VIN
(OVP input)
2VF
TSD
sense
7.0V
1V
OR
34V
2R
R
160°C
CS
latch
−
R
S
CS
+
CS
6
OUT
Q
PWM
Oscillat
set
ulse
RT/CT
5
GND
Note: 1. Bre not included in HA17384SPS/SRP.
Rev.3.00 Jun 15, 2005 page 4 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
30
Unit
V
Note
Supply voltage
VIN
DC output current
IO
±0.1
A
Peak output current
IO PEAK
VFB
VCOMP
IOEA
PT
±1.0
A
Error amplifier input voltage
COMP terminal input voltage
Error output sink current
Power dissipation
–0.3 to VIN
–0.3 to +7.5
10
V
V
mA
mW
°C
°C
°C
°C
°C
680
1, 2
Operating temperature
Junction temperature
Topr
Tj
–20 to +105
125
3
4
3
4
150
Storage temperature
Tstg
–55 to +125
–55 to +150
Notes: 1. For the HA17384HPS and HA17385HPS,
This value applies up to Ta = 43°C; at temperatures above this, 8.3 mC derating should be applied.
For the HA17384SPS,
This value applies up to Ta = 68°C; at temperatures above thising should be applied.
800
680mW
S
600
17384HPS, HA17385HPS
374mW
400
200 166mW
68°C
105°C
120
125°C
140
150°C
0
−20
60
80
100
160
ent Temperature Ta (°C)
Rev.3.00 Jun 15, 2005 page 5 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Absolute Maximum Ratings (cont.)
Notes: 2. This is the value when the device is mounted on a glass-epoxy substrate (40 mm × 40 mm × 1.6 mm).
However,
For the HA17384HRP and HA17385HRP,
Derating should be performed with 8.3 mW/°C in the Ta ≥ 43°C range if the substrate wiring density is 10%.
Derating should be performed with 11.1 mW/°C in the Ta ≥ 63°C range if the substrate wiring density is 30%.
For the HA17384SRP,
Derating should be performed with 8.3 mW/°C in the Ta ≥ 68°C range if the substrate wiring density is 10%.
Derating should be performed with 11.1 mW/°C in the Ta ≥ 89°C range if the substrate wiring density is 10%.
HA17384SRP
: −11.1 mW/°C (wiring density is 30%)
: −8.3 mW/°C (wiring density is 10%)
HA17384HRP, HA17385HRP
: −11.1 mW/°C (wiring density is 30%)
: −8.3 mW/°C (wiring density is 10%)
800
600
400
200
0
680 mW
500 mW
374 mW
222 mW
166 mW
43°C
63°C
68°C
140
150°C
−20
0
20
40
60
160
Ambient Te
3. Applies to the HA17384HPS/HRP and
4. Applies to the HA17384SPS/SRP.
Rev.3.00 Jun 15, 2005 page 6 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Electrical Characteristics
(The condition is: Ta = 25°C, VIN = 15 V, CT = 3300 pF, RT = 10 kΩ without notice)
•
Reference Part
Item
Symbol
Vref
Min
4.9
–
Typ
5.0
20
Max
5.1
50
Unit
V
Test Condition
Io = 1 mA
Note
Reference output voltage
Line regulation
Regline
Regload
los
mV
mV
mA
12 V ≤ VIN ≤ 25 V
–1 mA ≥ Io ≥ –20 mA
Vref = 0V
Load regulation
–
10
25
Output short current
Temperature stability
–30
–
–100
80
–180
–
∆Vref
ppm/°C Io = –1 mA,
–20°C ≤ Ta ≤ 105°C
1
Output noise voltage
VN
–
100
–
µV
10 Hz ≤ fnoise ≤ 10 kHz
1
Note: 1. Reference value for design.
•
Triangular Wave Oscillator Part
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Note
Typical oscillating
frequency
fosc Typ
fosc Max
∆fosc 1
47
52
57
kHz
CT = 3300 pF,
= 10 kΩ
Maximum oscillating
frequency
500
–
–
–
kHz
Supply voltage
±0.5
±2.0
25 V
dependency of oscillating
frequency
Temperature dependency
of oscillating frequency
∆fosc 2
–
±5.0
a ≤ 105°C
1
Discharge current of CT
IsinkCT
7.5
–
8.
= 2.0 V
Low level threshold voltage VTLCT
1
1
High level threshold
voltage
VTHCT
–
Triangular wave amplitude
∆VCT
V
∆VCT = VTHCT – VTLCT
1
Note: 1. Reference value for design.
°C, VIN = 15 V, CT = 3300 pF, RT = 10 kΩ without notice)
Error Amplifire Part / OV
•
Item
yp
2.50
–0.2
90
Max
2.58
–2.0
–
Unit
V
Test Condition
VCOMP = 2.5 V
Note
Non-inverting input volta
Input bias current
µA
dB
VFB = 5.0 V
Open loop voltage gain
Unity gain bank width
AV
BW
65
2.0 V ≤ VO ≤ 4.0 V
0.7
60
1.0
–
MHz
dB
Power supply voltage
rejection ratio
PSRR
70
–
12 V ≤ VIN ≤ 25 V
Output sink current
IOsink EA
IOsource EA
VOH EA
3.0
–0.5
5.5
9.0
–0.8
6.5
–
–
mA
mA
V
VFB = 2.7 V, VCOMP = 1.1 V
VFB = 2.3 V, VCOMP = 5.0 V
Output source current
High level output voltage
7.5
VFB = 2.3 V,
RL = 15 kΩ(GND)
Low level output voltage
VOL EA
VOVP
–
0.7
7.0
30
1.1
8.0
50
V
V
VFB = 2.7 V,
RL = 15 kΩ(Vref)
Increase FB terminal voltage
VFB = 8.0 V
OVP latch threshold
voltage
6.0
–
1
OVP (FB) terminal input
current
IFB(OVP)
µA
V
1
1
OVP latch reset VIN voltage VIN(OVP RES)
6.0
7.0
8.0
Decreasing VIN after OVP
latched
Note: 1. These values are not prescribe to the HA17384SPS/SRP because OVP function is not included.
Rev.3.00 Jun 15, 2005 page 7 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Electrical Characteristics (cont.)
(The condition is: Ta = 25°C, VIN = 15 V, CT = 3300 pF, RT = 10 kΩ without notice)
•
Current Sensing Part
Item
Symbol
AVCS
Min
2.85
0.9
–
Typ
3.00
1.0
Max
3.15
1.1
–
Unit
V/V
V
Test Condition
VFB = 0 V
Note
Voltage gain
1
Maximum sensing voltage
VthCS
Power supply voltage
rejection ratio
PSRR
70
dB
12 V ≤ VIN ≤ 25 V
2
3
Input bias current
IBCS
tpd
–
–2
–10
150
µA
ns
VCS = 2 V
Current sensing
response time
50
100
Time from when VCS becomes
2 V to when output becomes
“L” (2 V)
Notes: 1. The gain this case is the ratio of error amplifier output change to the current-sensing threshold voltage
change.
2. Reference value for design.
3. Current sensing response time tpd is definded a shown in the figure 1.
Vth
VCS
VOUT
(PWM)
Figure 1 Definition oonse Time tpd
•
PWM Output Part
Item
Symbo
VOL1
.5
2.2
–
Unit
V
Test Condition
losink = 20 mA
Note
Output low voltage 1
Output low voltage 2
Output high voltage 1
Output high voltage 2
V
V
losink = 200 mA
1
5
13.3
0.8
V
losource = –20 mA
losource = –200 mA
–
V
1
Output low voltage at
standby mode
1.1
V
VIN = 5 V,
losink = 1 mA
Rise time
tr
–
–
80
70
96
–
150
130
100
0
ns
ns
%
%
CL = 1000 pF
CL = 1000 pF
Fall time
tf
Maximum ON duty
Minimum ON duty
Du max
Du min
94
–
Note: 1. Pulse application test
Rev.3.00 Jun 15, 2005 page 8 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Electrical Characteristics (cont.)
(The condition is: Ta = 25°C, VIN = 15 V, CT = 3300 pF, RT = 10 kΩ without notice)
•
UVL Part
Item
Symbol
Min
14.5
7.6
9.0
6.8
5.0
0.6
4.3
Typ
16.0
8.4
Max
17.5
9.2
Unit
V
Test Condition
Turn-ON voltage
when VIN is rising
Note
Threshold voltage for
high VIN level
VTH UVL
1
V
2
1
2
1
2
Threshold voltage for
low VIN level
VTL UVL
10.0
7.6
11.0
8.4
V
Minimum operating
V
voltage after turn-ON
VHYS UVL = VTH UVL – VTL UVL
VIN UVL hysteresis voltage VHYS UVL
Vref UVL threshold voltage VT Vref
6.0
7.0
V
0.8
1.0
V
4.7
Vref
V
Voltage is forced toVref
terminal
Notes: 1. For the HA17384S/H.
2. For the HA17385H.
•
Total Characteristics
Item
Symbol
IIN
Min
7.0
120
200
31
Typ
10.0
170
270
34
Max
13.0
230
340
Unit
m
Test Condition
pF, VFB = VCS = 0 V
rt up
Note
Operating current
Standby current
Current of latch
ISTBY
ILATCH
VINZ
VFB = VOVP
1, 2
3, 4
Power supply zener
voltage
Overheat protection
starting temperature
TjTSD
–
160
Notes: 1. These values are not prescribe to the HVP function is not included.
2. VIN = 8.5 V in case of the HA17384H
3. These values are not prescribe to ause TSD function is not included.
4. Reference value for design.
Rev.3.00 Jun 15, 2005 page 9 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Timing Chart
Signal Name
Waveform timing (Outline)
OVP input
OVP latched
Power ON
IC turn ON
Power OFF
Reset of
Stationary operation
condition
OVP latch
16 V
(8.4 V)
Input voltage
VIN Pin 7
10 V
(7.6 V)
This voltage is determined
by the transformer
2 V
7.0 V
2 V
0V
0V
( ) shows the case
using HA17385H
UVL1
Internal signal which
cannot be externally
monitored.
5 V
Reference voltage
Vref Pin 8
4.7 V
4.7 V
0V
0V
UVL2
Internal signal which
cannot be externally
monitored.
2.8 V
1.2 V
Oscillation voltage of
triangular wave
RT/CT Pin 4
0V
IC operates and
PWM output stops.
St
Start up signal
Internal signal which
cannot be externally
monitored.
0V
PWM latch setting signal
internal signal which
cannot be externally
monitored.
0V
0V
7.0 V typ
(OVP input)
Error amplifier input signal
VFB Pin 2
VCOMP
Error amplifier output s
VCO1MP Pin 1
ID
*
I
D
OVP latch signal
Internal signal which
cannot be externally
monitored.
VIN
PWM output voltage
0V
VOUT Pin 6
Note: 1. ID indicates the power MOSFET drain current; it is actually observed as voltage VS generated
by power MOSFET current detection source resistance RS.
VCOMP indicates the error amp output voltage waveform. Current mode operation is
performed so that a voltage 1/3 that of VCOMP is the current limiter level.
Rev.3.00 Jun 15, 2005 page 10 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Operation (Description of Timing Chart)
From Power ON to Turn On
After the power is switched ON, the power supply terminal voltage (VIN) of this IC rises by charging through bleeder
resistor RB. At this time, when the power voltage is in the range of 2 V to 16 V*1. The low-voltage, lock out UVL1
operates and accordingly the OUT voltage, that is, the gate voltage of the power MOS FET, is fixed at 1.3 V or a lower
value, resulting in the power MOS FET remaining in the OFF state.
When the power supply voltage reaches 16 V, UVL1 of this IC is reset and the reference voltage (Vref) generating part
turns ON. However, until Vref becomes 4.7 V, the low-voltage, lock out UVL2 operates to keep the OUT terminal
voltage low. After Vref terminal voltage becomes 4.7 V or higher, OUT terminal outputs a PWM pulse.
Note: 1. The value is for the HA17384S/H.
The value is 8.4 V for the HA17385H.
Generation of Triangular Wave and PWM Pulse
After the output of the Vref, each blocks begins to operate. The triangular wave is generated on the RT/CT terminal.
For PWM pulses, the triangular wave rise time is taken as the variable on-duty on-time. The triangular wave fall time is
taken as the dead-band time. The initial rise of the triangular wave starts from 0 V, and to prevent a large on-duty at
this time, the initial PWM pulse is masked and not output. PWM pulses are oud after the second triangular wave.
The above operation is enabled by the charge energy which is charged throuer resistor RB into the capacitor
CB of VIN.
Stationary Operation
PWM pulses are outputted after the second wave of the trianguration as the switching power
supply starts.
By switching operation from ON/OFF to OFF/ON in MOS FET), the transformer converts
the voltage. The power supply of IC VIN is fed by ransformer.
In the current mode of the IC, the current in thmonitored by a source resistor RCS. Then the
current limiter level is varied according to rminal voltage) for PWM control. One third of
the error voltage level, which is divided the IC, is used to sense the current (R = 25 kΩ).
Two diodes between the error outponly as a DC level shifter. Actually, these diodes are
connected between the 2R-R circnt sensing comparator and GND, respectively. Therefore,
these blocks operate 1.4 V higcordingly, the error of the current sensing level caused by the
switching noise on the Gated. The zener diode of 1 V symbolically indicates that the
maximum sensing voltas 1 V.
Rev.3.00 Jun 15, 2005 page 11 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Power OFF
At power OFF, the input voltage of the transformer gradually decreases and then VIN of IC also decreases according to
the input voltage. When VIN becomes lower than 10 V*2 or Vref becomes lower than 4.7 V, UVL1 (UVL2) operates
again and the PWM pulse stops.
Note: 2. The value is for the HA17384S/H.
The value is 7.6 V for the HA17385H.
Commercial AC voltage
RB
220k
1/4W
+
−
−
SBD
ex. HRP24
100µ
200V
+
Rectifier
+
bridge diode
HRP32
B
Power switch Line filter
+
−
P
S
DC
output
VIN
CB
10µ
50V
20k
+
−
−
1000µ
3.6k
OVP input
(Ex: from photocoupler)
10V
0.1µ
Floating
ground
COMP
FB
Vref
150k
100p
VIN
RT
10k
MOSFET
567
CS
OU
RT/CT
CT
3300p
HA1
H
VCS
RCS
1
2W
330p
Figure 2 Mountineration Expression
Rev.3.00 Jun 15, 2005 page 12 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
VCOMP
COMP terminal
(Error output)
2 R
2VF
CS
R
1 V
latch
−
R
S
CS
VCS
CS terminal
+
PWM pulse
Q
Latch setting pulse
(Implemented in triagular
wave oscillator)
Latch setting
pulse
VCOMP
Error voltage
1
×
3
VCS
Current sensing
level
Figure 3 Operation Diagram of Current SPart
Point: 1) At maximum rated load, the setting
approximately 90% of area A be
2) When the OVP latch is operaade
in area B or C.
1.0
Heavy lo
0.8
nary operation / PWM
0.6
urrent-mode operation)
Current limit operation / Max duty cycle
C : No sensitivity area / No PWM output
0.4
0.2
0.0
4.4V
7.5V
0
3
4
5
6
7
8
ifier Output Voltage Vcomp (V)
Figure 4 Current Sense Characteristics
Rev.3.00 Jun 15, 2005 page 13 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Features and Theory of Current Mode Control
Features of Current Mode Control
•
•
Switch element current detection is performed every cycle, giving a high feedback response speed.
Operation with a constant transformer winding current gives a highly stable output voltage (with excellent line
regulation characteristics, in particular).
•
•
Suitable for flyback transformer use.
External synchronous operation is easily achieved. (This feature, for example, is applicable to synchronization with
a forizontal synchronizing signal of CRT monitor.)
Theory of Current Mode Control
In current mode control, a PWM pulse is generated not by comparing an error voltage with a triangular wave voltage in
the voltage mode, but by changing the current limiter level in accordance with the error voltage (COMP terminal in this
IC, that is,output of the error amplifier output) which is obtained by constantly monitoring the current of the switching
device (power MOS FET) using source resistor RCS.
One of the features of current mode control is that the current limited operates in all cycles of PWM as described by the
above theory.
In voltage mode, only one feedback loop is made by an output voltage. In e, on the other hand, two loops
are used. One is an output voltage loop and the other is a loop of the swient itself. The current of the
switching device can be controlled switch high speed. In current modhe transformer winding is
kept constant, resulting in high stability. An important consequlation in terms of total
characteristics is better than that in voltage mode.
AC
input
DC
output
OSC
S
−
IS
−
Vref
+
VCOMP
2R
R
Error amplifier
Figure 5 Block Diagram of Current Mode Switching Power Spply
Rev.3.00 Jun 15, 2005 page 14 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
A. Control in the case of heavy load
VCS
IS
B. Control in the case of light load
VCS
IS
As the load becomes heavy and the DC output decreases, the current sensing
level is raised as shown in A. above in order to increase the current in the switching
device in each cycle. When the load decreases, inverse control is carried out as
shown in B. above.
Figure 6 Primary Current Control of Transformer in Curnceptual Diagram)
Rev.3.00 Jun 15, 2005 page 15 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Main Characteristics
Supply Current vs. Supply Voltage (HA17384S/H)
20
Supply Current vs. Supply Voltage (HA17385H)
20
Ta = 25°C
CT = 3300pF
Ta = 25°C
CT = 3300pF
fosc = 52kHz
RT = 10kΩ
fosc = 52kHz
RT = 10kΩ
15
10
5
15
10
5
Latch current
(HA17384H)
Latch current
0
0
0
10
20
30
40
0
10
20
30
40
Power supply voltage VIN (V)
Power supply voltage VIN (V)
Standby Current/Latch Current vs. Supply Voltage
Standby Current/Latch Current vs. Supply Voltage
Exploded diagram of the small current part from the above figure
Exploded diagram of thall current part from the above figure
(HA17384S/H)
7385H)
2.0
2.0
Ta = 25°C
Ta
1.5
1.5
1.0
Latch current
(HA17384H)
Latch current
0.5
0
0
10
20
10
20
30
40
Power supply voltag
Power supply voltage VIN (V)
Operating Current vs. dby Current/Latch Current vs. Ambient Temperature
12
400
VIN = 15V
fosc = 52
Latch current
V
V
IN = 15V (HA17384H)
IN = 8.5V (HA17385H)
11
10
300
200
9
8
100
0
Stanby current
−20
0
20
40
60
80
105
−20
0
20
40
60
80
105
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Rev.3.00 Jun 15, 2005 page 16 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
UVL Threshold Voltage vs. Ambient Temperature
Line Regulation Characteristics of Reference Voltage
20
5.2
Ta = 25°C
VIN = 10V or more (HA17384S/H) RT = 10kΩ
CT = 3300pF
HA17384S/H
VIN = 7.6V or more (HA17385H)
15
10
5
VTH
VTL
5.1
5.0
HA17385H
VTH
VTL
4.9
4.8
0
−20
0
20
40
60
85
0
10
Supply voltage VIN (V)
20
30
Ambient temperature Ta (°C)
Load Regulation Characteristics of Reference Voltage
6.0
Reference Voltage vs. Ambient Temperature
5.2
Ta = 25°C
IN = 15V
CT = 3300pF
VIN = 15V
CT = 3300pF
V
RT = 10kΩ
RT = 10kΩ
5.5
5.0
5.1
5.
Vref short
protection
operates
4.5
4.0
0
20
40
60
80
20
40
60
80
105
Output current of Vref termin
Ambient temperature Ta (°C)
CT Discharge Current vs. RT/
9.5
Discharge Current vs. Ambient Temperature
9.5
VIN=15 V
Ta = 25°C
M
VIN = 15V
9.0
8.5
9.0
Measured when RT/CT
terminal voltage of 2 V is
externally supplied
Minimum
triangular w
8.5
Maltage of
triangwave
8.0
8.0
7.5
7.5
0
1
2
3
4
−20
0
20
40
60
80
105
RT/CT terminal voltage VCT (V)
Ambient temperature Ta (°C)
Rev.3.00 Jun 15, 2005 page 17 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
500
Ta = 25°C
V
IN = 15V
200
100
C
T
= 4
1000pF
2200p
4700pF
0.01
7
0
p
F
50
0.022
µ
F
0.047
20
10
µ
F
µ
F
5
500 1k
2k
5k 10k 20k
50k 100k 200k
Timing resistance RT (Ω)
Figure 7 scillation Frequency vs. Timing Resistance
Case 1.
Setting large maximum duty cycle.
Triangular wave
PWM maximum
u max = 95%
fosc = 52kHz
case of small CT and large RT
x. CT = 3300pF, RT = 10kΩ)
Case 2.
Setting small maximu
r wave
um ON pulse
Du max = 40%
fosc = 52kHz
In the case of large CT and small RT
(ex. CT = 0.033µF, RT = 680Ω)
Figure 8 Relationship Between Triangular Wave and Maximum ON Duty of PWM Pulse
Rev.3.00 Jun 15, 2005 page 18 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
100
Ta = 25°C
75
50
25
V
IN = 15V
0
500
1k
2k
5k
10k 20k
50k 100k 200k
Timing Resistance RT (Ω)
Note: In the oscillation system of this IC, a constant dischargcurrent of 8.4mA
flows the timing capacitor during triangular wave fall. re, note that a
small maximum ON duty (large dead band) leads pply current.
Refer to the equations of oscillation frequency andetails.
Figure 9 PWM Pulse ON Duty vs
Rev.3.00 Jun 15, 2005 page 19 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Oscillation Frequency vs. Ambient Temperature
Operating Current vs. Maximum ON Duty
25
65
60
55
50
45
40
VIN = 15V
CL = 1000pF
VIN = 15V
Ta=25
°C
CL = 1000pF
20
15
10
5
VCS = 0V
VFB = 0V
CT = 3300pF
RT = 10kΩ
Dumax = 95%
CT = 0.033µF
RT = 680Ω
Dumax = 40%
0
0
25
50
75
100
−20
0
20
40
60
80
105
Ambient Temperature Ta (°C)
Maximum ON Duty Du max (%)
Rise/Fall Time of Output Pulse vs. Load Capacitance
250
Rise/Fall Time of Output Pulse vs. Ambient Temperature
250
VIN = 15V
VCS = 0V
CL = 1000pF
VIN = 15V
VCS = 0V
Ta = 25°C
CT = 3300pF
RT = 10kΩ
V
FB = 0
200
150
100
50
V
FB = 0V
200
150
CT = 3300pF
RT = 10kΩ
ime tf
0
0
1000
2000
3000
20
40
60
80
105
Output load capacitance C
Ambient temperature Ta (°C)
tionship Between Low Voltage Malfunction
Protection and PWM Output
Current Sensing Level vs. A
1.25
VIN = 15V Measure
VFB = 0V voltag
1.00
VIN
(UVL1)
L
H
H
L
Vref
(UVL2)
L
L
L
L
H
H
L
0.75
0.50
0.25
0
Available
to
output
PWM
OUTPUT
IC is in
the ON
state and
output is
fixed to
LO.
Condition
description state
Standby
Operation Standby
state state
−20
0
20
40
60
80
105
Ambient temperature Ta (°C)
Rev.3.00 Jun 15, 2005 page 20 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
100
VIN = 15V, Ta = 25°C
75
50
Gain AVO
Unit gain frequency
fT = 1MHz Typ
25
0
0
60
Phase Φ
Phase margin
at fT
−25
120
ΦO = 60° Typ
180
10M
10
100
1k
10k
100k
1M
Error Amplifier Input Signal Frequency f (Hz)
Figure 10 Open Loop Gain Characterisrics of Err Amplifier
Rev.3.00 Jun 15, 2005 page 21 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Calculation of operation parameters
•
Triangular wave
1. Maximum ON duty Du max (Refer to the right figure.)
1
Du max =
190Ω
RT − 440Ω
1 + 1.78 × In 1 +
(
)
2. Oscillation frequency fosc
PWM maximum
ON pulse
1
fosc =
190Ω
C × R × 0.56 + In 1 +
{
(
R − 440Ω )}
T
T
T
From the above two equations, the following two equations are
obtained.
3. Equalization to device RT from Du max
Dumax is the ratio of
maximum ON time of
PWM to one cycle time.
190Ω
RT =
+ 440Ω
0.56 (1/Du max − 1)
e
− 1
(e = 2.71828.base of natural logarithm)
4. Equation to device CT from fosc and RT
In the above case,
Dumax = 95%
Du max
CT = 1.78 ×
fosc × RT
5. Operating current IIN
IIN = IQ + IsinkCT × (1 − Du max) + Ciss × VIN × fosc
providing that IQ = 8.4mA Typ (Supply curops.)
Ciss is the input gate capacitance of thonnected and VIN is
the supply voltage of the IC.
Example 1: Calculation when RT = 10kΩ
fosc = 52kHz, Du max = 95%,
Example 2: Calculation for 50% of
RT = 693Ω, CT = 6360p
However, Ciss = 100
Note that the actucalculated one because of the internal
delay in operatof the POWER MOS FET. Check the
value when
Additionalarge supply current, even if the frequency is
not chome difficult. In such a case, the following
mea
er, a small bleeder resistance is required.
ce between Vref and GND is required.
(max with a triangular wave and raise the current limit of the
vice to around the maximum value (1.0V Typ).
VTHCS
RCS
IDmax
=
The current limit is essed as
Figure 11 Calculation of Operation Parameters
Rev.3.00 Jun 15, 2005 page 22 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Application Circuit Example (1)
Rectifier bridge diode
−
+
141V
+
−
100µ
200V 1/4W
220k
SBD
HRP24
1000µ
10V
Commercial
AC 100V
+
Line filter
HRP32
B
16.4V
VIN
+
−
P
S
DC 5V, 3A
OUTPUT
20k
+
10µ
−
50V
−
3.6k
HA17384H,
HA17385H
10k
Transformer specification
example
EI-22 type core
(H7C18 × 06Z)
Gap length
2SA1029
0.1µ
Vref
COMP
FB
150k
100p
10k
lg = 0.3mm
VIN
OUT
GND
51
K1567
RT
10k
47k
CS
nsformer coil example
∅80T/570µH
6T Bifiler/22µH
/170µH
RT/CT
HA17431
CT
3300p
The circuit for
output current limiter
1k
470p
1k
Notes: 1.
: PRIMARY GND, : S
2. Check the wiring directi
3. Insert a snubber circu
4. OVP function is noRP.
Snubber circuit
example
s a flyback type, the voltages in the
dary (s) coils of the transformer and
re proportional to each other. Using this,
age of the backup coil (VIN of IC) is controlled
16.4V. (The voltage of the point divided by
f 20kΩ and 3.6kΩ is 2.5V).
470p
1kV
51
FRD
DFG1C8
oltage Sensing Flyback Converter
Rev.3.00 Jun 15, 2005 page 23 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Application Circuit Example (2)
When the error amplifier is used
Transformer specification
example
EI-22 type core
(H7C18 × 06Z)
Gap length
Rectifier bridge diode
−
+
141V
+
−
100µ
200V 1/4W
220k
lg = 0.3mm
Transformer coil example
P: 0.5∅80T/570µH
S: 0.5∅16T Bifiler/22µH
Commercial
AC 100V
Line filter
SBD
B: 0.2∅44T/170µH
HRP24
+
HRP32
P
2SA1029
10k
10k
VIN
16.4V
1.8k
330
S
+
+
B
10µ
50V
−
1000µ
10V
DC
−
3.3k
3.3µ
5V, 3A
OUTPUT
+
47k HA17431
−
B
4.7k
The circuit for
output current limiter
−
HA17431
HA17384H,
HA17385H
0.1µ
Vref
COMP
150k
100p
ler
ntrol)
FB
VIN
OUT
GND
2SK1567
51
RT
10k
CS
RT/CT
CT
3300p
1k
470p
1k
When the error
amplifier is not used
eory)
ndary side (S) of the flyback converter,
plification is carried out by a shunt
or and photocoupler.
COMP
OVP input
voltage of the backup coil (B) is not monitored,
hich differs from the application example (1).
Bleeder resistor
(adjuster according
to the rating of the
Photocoupler)
In addition, OVP operates on the secondary side
(S) using a photocoupler.
Refer to the application example (1) for the other
notes.
Figure 13 Secondary Voltage Sensing Flyback Converter
Rev.3.00 Jun 15, 2005 page 24 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Application Examples for Fuller Exploitation of Power Supply Functions
A number of application examples are briefly described below.
1. Soft start
A soft start is a start method in which the PWM pulse width is gradually increased when the power supply is
activated. This prevents the stress on the transformer and switch element caused by a rapid increase in the PWM
pulse width, and also prevents overshoot when the secondary-side output voltage rises. The circuit diagram is
shown in figure 14.
VIN
7
DIN
(5V)
VREF
8
1
IO
Vref
5V
800µA typ
RCU
COMP
D2
−
FB
2
EA
(4.4V)
(3.7V)
+
D1
CST
2.5V
(3V)
2R
R
IC internal circuit
(around error amp.)
(1V)
1V
To power supply
detection
comparator
nal circuit
rtially shown)
Figure 14 Circuit Diagram f
Operation: In this circuit, error amp output source current IO (the switch element
current detection level, using a voltage slope that charges shen the voltage at each node
is at the value shown in parentheses in the figure, the some is thus given by the
following formula:
TST = (3.7 V/800 µA) × CST ≈ 4.62 CST (m
(CST unit: µF)
External parts other than CST operate as fo
⎯ Diode D1
⎯ Diode D2
: Current detection se-flow prevention.
: Together with rge drawing when power supply falls.
⎯ Resistance RCU : For CST chaUse a high resistance of the order of several
hundred
Note: During a soft start, output for a while after the IC starts operating, there is a lack of
energy during thde may be entered. In this case, the capacitance between Vref and
GND should be inF to 10 µF.
Rev.3.00 Jun 15, 2005 page 25 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Notice for Use
OVP Latch Block
•
Case
When DC power is applied directly as the power supply of the HA17384H, HA17385H, without using the
transformer backup coil. Also, when high-frequency noise is superimposed on the VIN pin.
Problem
•
The IC may not be turn on in the case of a circuit in which VIN rises quickly (10 V/100 µs or faster), such as that
shown in figure 15. Also, the OVP latch may operate even though the FB pin is normally at VOVP or below after the
IC is activated.
•
•
Reason
Because of the IC circuit configuration, the timer latch block operates first.
Remedy (counter measure)
Take remedial action such as configuring a time constant circuit (RB, CB) as shown in figure 16, to keep the VIN rise
speed below 10 V/100 µs. Also, if there is marked high-frequency noise on the VIN pin, a noise cancellation
capacitor (CN) with the best possible high-frequency characteristics (such as a ceramic capacitor) should be inserted
between the VIN pin and GND, and close to the VIN pin.
When configuring an IC power supply with an activation resistance and backuing, such as an AC/DC converter,
the rise of VIN will normally be around 1 V/100 µs, and there is no risk of occurring, but careful attention
must be paid to high-frequency noise.
Also, this phenomenon is not occuring to the HA17384S, because O
Input
VIN
eedback
Ficuit with Fast VIN Rise Time
Rev.3.00 Jun 15, 2005 page 26 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Input
Output
Time constant
circuit
RB
51Ω
CN
VIN
VIN
18V
Feedback
HA17384
Series
+
CB
1µF
GND
Figure 16 Sample Remedial Circuit
Externally Synchronized Operation
•
Case
When, with a power supply using the HA17384S/H or HA17385H, externally synchronized operation is performed
by applying an external syncronous signal to the RT/CT pin (pin 4).
•
•
•
Problem
Synchronized operation may not be possible if the amplitude of the externnous signal is too large.
Reason
The RT/CT pin falls to a potential lower than the ground.
Remedy (counter measure)
In this case, clamping is necessary using a diode with as smalh as a schottky barrier
diode, as shown in figure 17.
Vref
ous
HA17384
Series
nal
Remedial Circuit
Rev.3.00 Jun 15, 2005 page 27 of 28
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Package Dimensions
JEITA Package Code
P-DIP8-6.3x9.6-2.54
RENESAS Code
PRDP0008AF-A
Previous Code
DP-8B
MASS[Typ.]
0.51g
D
8
5
1
4
b 3
0.89
Z
Dimension in Millimeters
Reference
Symbol
Min
Nom
7.62
9.6
Max
e 1
D
10.6
7.4
E
6.3
A
5.06
A 1
b p
b 3
c
0.5
0.38
0.48
1.3
0.58
0.35
0.20
0.25
bp
e
θ
0°
15°
e
2.29
2.54
2.54
2.79
1.27
Z
L
JEITA Package Code
P-SOP8-3.95x4.9-1.27
RENESAS Code
PRSP0008DD-B
Pre
*1
NOTE)
F
D
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
8
bp
b1
Index mark
Dimension in Millimeters
Reference
Symbol
Min
Nom
4.90
3.95
Max
5.30
Terminal cross section
D
E
A 2
A 1
A
1
4
0.10
0.34
0.19
0.14
0.25
1.75
0.50
*3
e
bp
Z
x
M
L 1
b p
b 1
c
0.42
0.40
0.22
0.20
0.25
c
1
θ
H E
e
0
°
8°
5.80
6.10
1.27
6.20
x
0.25
0.10
0.75
1.27
L
y
y
Z
Detail F
L
0.40
0.60
1.08
L
1
Rev.3.00 Jun 15, 2005 page 28 of 28
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-mhiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and me is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property dam
Remember to give due consideration to safety when making your circuit designs, with appropriate ent of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of tht suited to the customer's
application; they do not convey any license under any intellectual property rights, or annology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringemethe use of any product data,
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Colophon 2.0
相关型号：
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