首页 > 晶体管 > 小信号场效应晶体管 > HAF2026RJ-EL-E

HAF2026RJ-EL-E

更新时间：2024-09-18 08:32:02

品牌：RENESAS

描述：Silicon N Channel Power MOSFET Power Switching

PDF下载

中文翻译

PCB计价

概述
规格参数
数据手册

如果您发现信息不准确，欢迎纠错

HAF2026RJ-EL-E 概述

Silicon N Channel Power MOSFET Power Switching 硅N通道功率MOSFET电源开关小信号场效应晶体管

HAF2026RJ-EL-E 规格参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.36	Is Samacsys：	N
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	0.6 A	最大漏极电流 (ID)：	0.6 A
最大漏源导通电阻：	0.3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	湿度敏感等级：	1
元件数量：	2	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.5 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	20
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

HAF2026RJ-EL-E 数据手册

通过下载HAF2026RJ-EL-E数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

HAF2026RJ

Silicon N Channel Power MOS FET

Power Switching

REJ03G1255-0200

Rev.2.00

Jun 02, 2006

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

•

Logic level operation (5 to 6 V Gate drive)

Built-in the over temperature shut-down circuit

High endurance capability against to the shut-down circuit

Latch type shut down operation (need 0 voltage recovery)

Built-in the current limitation circuit

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 (FP-8DAV))

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

Current

Limitation

Circuit

Current

Limitation

Circuit

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

MOS1

MOS2

Rev.2.00 Jun 02, 2006 page 1 of 8

HAF2026RJ

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

–2.5

0.6

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Cannel dissipation

I_DR

0.6

1.54

1.5

Note3

I_AP

E_AR

Note3

°C

Pch^Note1

Pch^Note2

Tch

Cannel temperature

Storage temperature

150

–55 to +150

Tstg

Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

3. Tc = 25°C, Rg ≥ 50 Ω

Typical Operation Characteristics

(Ta=25°C)

Item

Symbol

V_IH

Min

3.5

—

Typ

—

Max

—

1.2

100

—

1.0

Unit

µA

°C

Test Conditions

Input voltage

Input current

V_IL

I_IH1

I_IH2

I_IL

I_IH(sd)1

I_IH(sd)2

Tsd

Vop

I_{D limt}

Vi = 8 V, V_DS= 0

(Gate non shut down)

Vi = 3.5 V, V_DS= 0

Vi = 1.2 V, V_DS= 0

Vi = 8 V, V_DS= 0

Vi = 3.5 V, V_DS= 0

Cannel temperature

—

Input current

0.53

0.23

175

—

(Gate shut down)

Shut down temperature

Gate operation voltage

Drain current (Current limitation)

3.5

0.6

—

Vi = 5 V, V_DS= 3 V

Rev.2.00 Jun 02, 2006 page 2 of 8

HAF2026RJ

Electrical Characteristics

(Ta = 25°C)

Item

Drain current

Symbol

Min

0.25

—

Typ

—

Max

—

Unit

Test Conditions

V_GS= 3.5 V, V_DS= 2 V

I_D1

I_D2

—

V_GS= 1.2 V, V_DS= 2 V

V_GS= 5 V, V_DS= 3 V

I_D= 10 mA, V_GS= 0

I_D3

0.6

—

1.0

—

Drain to source breakdown

voltage

V_(BR)DSS

—

Gate to source breakdown

voltage

V_(BR)GSS

I_GSS1

–2.5

—

I_G= 800 µA, V_DS= 0

I_G= –100 µA, V_DS= 0

V_GS= 8 V, V_DS= 0

V_GS= 3.5 V, V_DS= 0

V_GS= 1.2 V, V_DS= 0

V_GS= –2.4 V, V_DS= 0

V_GS= 8 V, V_DS= 0

V_GS= 3.5 V, V_DS= 0

V_DS= 60 V, V_GS= 0

Gate to source leak current

—

100

µA

I_GSS2

—

I_GSS3

—

I_GSS4

—

–100

—

Input current (shut down)

I_GS(OP)1

I_GS(OP)2

I_DSS1

—

0.53

0.23

—

Zero gate voltage drain

current

—

2.5

—

I_DSS2

—

V_DS= 48 V, V_GS= 0, Ta = 125°C

V_DS= 10 V, I_D= 1 mA

I_D= 0.5 A, V_DS= 10 V^Note4

I_D= 0.5 A, V_GS= 5 V^Note4

I_D= 0.5 A, V_GS= 10 V^Note4

V_DS= 10 V, V_GS= 0, f = 1MHz

V_GS= 5 V, I_D= 0.5 A, R_L= 60 Ω

Gate to source cut off voltage

Forward transfer admittance

V_GS(off)

|y_fs|

1.4

0.26

—

1.3

200

150

140

2.9

Static drain to source on state R_DS(on)

resistance

R_DS(on)

300

210

—

mΩ

µs

—

Output capacitance

Turn-on delay time

Rise time

Coss

t_d(on)

t_r

—

Turn off delay time

Fall time

t_d(off)

t_f

—

0.9

—

Body-drain diode forward

voltage

V_DF

—

0.9

—

I_F= 1 A, V_GS= 0

Body-drain diode reverse

recovery time

t_rr

—

I_F= 1 A, V_GS= 0, di_F/dt = 50 A/µs

Over load shut down

operation time ^note5

t_os1

t_os2

—

V_GS= 5 V, V_DD= 16 V

V_GS= 5 V, V_DD= 24 V

Notes: 4. Pulse test

5. Including the junction temperature rise of the over lorded condition.

Rev.2.00 Jun 02, 2006 page 3 of 8

HAF2026RJ

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

4.0

3.0

2.0

1.0

Thermal shut down

operation area

Test condition.

When using the glass epoxy board.

(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)

1 ms

PW = 10 m

DC Operation

0.3

0.1

Operation

in this area

is limited by R_DS(on)

2 Driver

PW< 10s

Operation

Note6

1 Driver Ope

0.03 Ta = 25°C

1 shot Pulse

ration

1 Driver Operation

0.01

100

150

200

0.01 0.03 0.1 0.3

10 30 100

Drain Source Voltage V_DS(V)

Note 6:

Ambient Temperature Ta (°C)

When using the glass epoxy board.

( FR4 40 x 40 x 1.6 mm)

Typical Output Characteristics

Pulse Test

Typical Transfer Characteristics

2.0

1.6

1.2

0.8

0.4

1.0

0.8

0.6

0.4

0.2

V_DS= 10 V

Pulse Test

10 V

5 V

V_GS= 3.5 V

75°C

25°C

Tc = -25°C

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Static Drain to Source State Resistance

vs. Drain Current

Drain to Saturation Voltage vs.

Gate to Source Voltage

200

160

120

500

Pulse Test

V_GS= 5 V

200

100

V_GS= 10 V

I_D= 0.5 A

0.2 A

Pulse Test

0.5

Drain Current I_D(A)

0.01 0.02 0.05 0.1 0.2

Gate to Source Voltage V_GS(V)

Rev.2.00 Jun 02, 2006 page 4 of 8

HAF2026RJ

Forward Transfer Admittance vs.

Drain Current

Drain to Source On State Resistance

vs. Temperature

500

Pulse Test

V_DS=10 V

Tc = –25°C

Pulse Test

400

300

200

I_D= 0.5 A, 0.2 A

25°C

75°C

0.3

0.1

V_GS= 5 V

0.03

0.01

I_D= 0.5 A, 0.2 A

100

V_GS= 10 V

0.003

0.001

–25

25 50

75 100 125 150

0.01

0.03

0.1

0.3

Case Temperature Tc (°C)

Drain Current I_D(A)

Body to Drain Diode Reverse

Recovery Time

Switching Characteristics

100

1000

500

V_GS= 5 V, V_DD= 30 V

PW = 300 µs, duty < 1 %

200

100

t_d(on)

d(off)

0.3

0.1

di / dt = 50 A / µs

V_GS= 0, Ta = 25°C

0.01 0.02 0.05 0.1 0.2

0.5

0.001 0.003 0.01 0.03 0.1 0.3

Reverse Drain Current I_DR(A)

Drain Current I_D(A)

Reverse Drain Current vs.

Source to Drain Voltage

Typical capacitance vs.

Drain to Source Voltage

1.0

0.8

0.6

0.4

0.2

1000

100

Pulse Test

V_GS= 5 V

0 V

V_GS= 0

f = 1 MHz

0.2

0.4

0.6

0.8

1.0

Source to Drain Voltage V_SD(V)

Drain to Source V_DS(V)

Rev.2.00 Jun 02, 2006 page 5 of 8

HAF2026RJ

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

Shutdown Case Temperature vs.

Gate to Source Voltage

200

180

160

140

V_DD= 16 V

24 V

120

100

I_D= 0.2 A

0.001

0.01

0.1

Shutdown Time of Lord-Short Test

PW (S)

Gate to Source Voltage V_GS(V)

Avalanche Energy vs.

Channel Temperature Derating

2.0

1.5

I_AP= 0.6 A

V_DD= 25 V

duty < 0.1 %

Rg > 50 Ω

0.5

100

125

150

Channel Temperature Tch (°C)

Avalanche Test Circuit

Avalanche Waveform

V_DSS

E_AR

• L • I_AP

•

V_DSS– V_DD

V_DS

Monitor

I_AP

Monitor

V_(BR)DSS

I_AP

V_DS

V_DD

D. U. T

I_D

Vin

5 V

50 Ω

V_DD

Rev.2.00 Jun 02, 2006 page 6 of 8

HAF2026RJ

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

D = 1

0.5

0.1

θch-f(t) = γs (t) • θch - f

θch-f = 125°C/W, Ta = 25°C

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

0.01

0.001

D =

0.0001

100 µ

1 m

10 m

100 m

100

1000

10000

10 µ

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

D = 1

0.5

0.1

θch-f(t) = γs (t) • θch - f

θch-f = 166°C/W, Ta = 25°C

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

0.01

0.001

D =

0.0001

100 µ

1 m

10 m

100 m

100

1000

10000

10 µ

Pulse Width PW (S)

Switching Time Test Circuit

Vin Monitor

Switching Time Waveform

Vout

Monitor

90%

D.U.T.

R_L

10%

Vin

Vout

10%

V_DD

= 30 V

Vin

5 V

50 Ω

90%

d(off)

d(on)

Rev.2.00 Jun 02, 2006 page 7 of 8

HAF2026RJ

Package Dimensions

Package Name

SOP-8

JEITA Package Code

RENESAS Code

PRSP0008DD-D

Previous Code

FP-8DAV

MASS[Typ.]

0.085g

P-SOP8-3.95 × 4.9-1.27

b_p

Index mark

NOTE)

1. DIMENSIONS "*1(Nom)" AND "*2"

DO NOT INCLUDE MOLD FLASH.

2. DIMENSION "*3" DOES NOT

INCLUDE TRIM OFFSET.

Terminal cross section

(Ni/Pd/Au plating)

b_p

Dimension in Millimeters

Reference

Symbol

Min Nom Max

4.90

3.95

5.3

L₁

A₂

A₁

0.10

0.14 0.25

1.75

0.34 0.40 0.46

b_p

b₁

0.15 0.20 0.25

c₁

0° 8°

5.80 6.10 6.20

1.27

H_E

Detail F

0.25

0.1

0.75

L₁

0.40 0.60 1.27

1.08

Ordering Information

Part Name

Quantity

Shipping Container

HAF2026RJ-EL-E

Note: For some grades, production may be terminated.

Please contact the Renesas sales office to check the state of production before ordering the product.

2500 pcs

Taping

Rev.2.00 Jun 02, 2006 page 8 of 8

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a

product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater

use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and

cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.

Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology (Shanghai) Co., Ltd.

Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120

Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898

Renesas Technology Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co., Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145

Renesas Technology Malaysia Sdn. Bhd

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510

Colophon .6.0

HAF2026RJ-EL-E 相关器件

型号	制造商	描述	价格	文档
HAF2026RJ_10	RENESAS	Silicon N Channel Power MOS FET Power Switching	获取价格
HAF2027	RENESAS	Silicon N Channel Power MOSFET Power Switching	获取价格
HAF2027-90L-E	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-251VAR	获取价格
HAF2027-90STL-E	RENESAS	Silicon N Channel Power MOSFET Power Switching	获取价格
HAF2027-90STR-E	RENESAS	Silicon N Channel Power MOSFET Power Switching	获取价格
HAF2027L	RENESAS	Silicon N Channel Power MOSFET Power Switching	获取价格
HAF2027S	RENESAS	Silicon N Channel Power MOSFET Power Switching	获取价格
HAF70009	INTERSIL	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET	获取价格
HAFBFS0050C4ACAAX3	HONEYWELL	HAF SeriesâHigh Accuracy	获取价格
HAFBFS0050C4ACAAX5	HONEYWELL	HAF SeriesâHigh Accuracy	获取价格