HAT2054M-EL-E
更新时间:2024-09-18 08:32:05
品牌:RENESAS
描述:Silicon N Channel Power MOS FET Power Switching
HAT2054M-EL-E 概述
Silicon N Channel Power MOS FET Power Switching 硅N通道功率MOS FET电源开关 功率场效应晶体管
HAT2054M-EL-E 规格参数
生命周期: | Not Recommended | 零件包装代码: | SC-95 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.4 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 6.3 A | 最大漏源导通电阻: | 0.052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 25.2 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
HAT2054M-EL-E 数据手册
通过下载HAT2054M-EL-E数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载HAT2054M
Silicon N Channel Power MOS FET
Power Switching
REJ03G1173-0400
(Previous: ADE-208-756B)
Rev.4.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PTSP0006FA-A
(Package name: TSOP-6)
1 2 5 6
D D
D
D
4
5
6
4
Source
Gate
Drain
3
G
3
1, 2, 5, 6
3
2
1
S
4
Rev.4.00 Sep 07, 2005 page 1 of 3
HAT2054M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
±20
V
Note 2
ID
6.3
A
Note 1
Drain peak current
ID (pulse)
25.2
A
Note 2
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch (pulse)
6.3
A
Note 2
Note 3
2.0
W
W
°C
°C
Pch (continuous)
Tch
1.05
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
IGSS
Min
30
—
—
1.0
—
—
4
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note 4
ID = 3 A, VGS = 4.5 V Note 4
ID = 3 A, VDS = 10 V Note 4
VDS = 10 V
—
±0.1
1
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
VGS (off)
RDS (on)
RDS (on)
|yfs|
—
2.5
31
52
—
26
mΩ
mΩ
S
40
Forward transfer admittance
Input capacitance
7
Ciss
Coss
Crss
td (on)
tr
—
—
—
—
—
—
—
—
—
620
170
110
13
—
pF
pF
pF
ns
ns
ns
ns
V
V
GS = 0
f = 1 MHz
GS = 10 V, ID = 3 A,
Output capacitance
—
Reverse transfer capacitance
Turn-on delay time
—
—
V
RL = 3.3 Ω
Rise time
90
—
Turn-off delay time
td (off)
tf
50
—
Fall time
40
—
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
0.95
(50)
—
IF = 6.3 A, VGS = 0 Note 4
IF = 6.3 A, VGS = 0
diF/dt = 20 A/µs
trr
—
ns
Note: 4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 3
HAT2054M
Package Dimensions
JEITA Package Code
SC-95 Modified
RENESAS Code
Package Name
MASS[Typ.]
0.012g
PTSP0006FA-A
TSOP-6 / TSOP-6V
D
A
e
Q
c
E
HE
L
L
P
L
1
Dimension in Millimeters
Reference
Symbol
Min
0.8
0
Nom
Max
1.1
0.1
1.0
A3
A
A
A
b
A1
A2
A3
x
S
A
M
e
0.8
0.9
0.25
0.32
0.3
b
0.25
0.1
0.4
b
1
A
A
2
1
A
c
0.13
0.11
2.95
1.6
0.15
c1
D
E
e
2.8
3.1
1.45
1.75
e
1
1.0
y
S
H
E
2.6
0.3
0.1
0.2
2.8
3.0
0.7
S
L
b
L
1
0.5
L
P
0.6
b
1
I1
x
0.05
0.05
0.45
c1
y
b
2
c
b
2
e
1
2.2
0.2
I1
0.8
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
HAT2054M-EL-E
3000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
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