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HAT2068R-EL-E

更新时间：2024-09-18 08:32:05

品牌：RENESAS

描述：Silicon N Channel Power MOS FET Power Switching

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HAT2068R-EL-E 概述

Silicon N Channel Power MOS FET Power Switching 硅N通道功率MOS FET电源开关

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HAT2068R

Silicon N Channel Power MOS FET

Power Switching

REJ03G1176-0500

(Previous: ADE-208-1225C)

Rev.5.00

Sep 07, 2005

Features

•

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_{DS (on)}= 7 mΩ typ. (at V_GS= 10 V)

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 <FP-8DAV> )

5 6 7 8

D D D D

1, 2, 3

5, 6, 7, 8

Source

Gate

Drain

S S S

1 2 3

Rev.5.00 Sep 07, 2005 page 1 of 6

HAT2068R

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

V_DSS

V_GSS

I_D

Value

Unit

±20

Gate to source voltage

Drain current

Note 1

Drain peak current

I_{D (pulse)}

112

Body-drain diode reverse drain current

Channel dissipation

I_DR

Pch ^{Note 2}

θ ch-a ^{Note 2}

Tch

2.5

Channel to ambient thermal impedance

Channel temperature

°C/W

°C

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

V _{(BR) DSS}

V _{(BR) GSS}

I_GSS

Min

±20

—

1.0

—

Typ

—

Max

—

Unit

Test Conditions

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

I_D= 10 mA, V_GS= 0

I_G= ±100 µA, V_DS= 0

V_GS= ±16 V, V_DS= 0

V_DS= 30 V, V_GS= 0

V_DS= 10 V, I_D= 1 mA

I_D= 7 A, V_GS= 10 V ^{Note 3}

I_D= 7 A, V_GS= 4.5 V ^{Note 3}

I_D= 7 A, V_DS= 10 V ^{Note 3}

V_DS= 10 V

—

±10

µA

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state resistance

I_DSS

—

V_{GS (off)}

R_{DS (on)}

|y_fs|

—

2.5

mΩ

1650

400

220

—

Forward transfer admittance

Input capacitance

Ciss

Coss

Crss

—

V_GS= 0

Output capacitance

—

f = 1 MHz

Reverse transfer capacitance

Total gate charge

—

V_DD= 10 V

_GS= 10 V

Gate to source charge

Gate to drain charge

Turn-on delay time

Qgs

—

I_D= 14 A

Qgd

—

t_{d (on)}

t_r

t_{d (off)}

t_f

0.80

—

V_GS= 10 V, I_D= 7 A

_DD≈ 10 V

Rise time

—

R_L= 1.43 Ω

Turn-off delay time

—

Rg = 4.7 Ω

Fall time

—

Body-drain diode forward voltage

Body-drain diode reverse recovery time

V_DF

1.10

—

I_F= 14 A, V_GS= 0 ^{Note 3}

I_F= 14 A, V_GS= 0

di_F/dt = 50 A/µs

t_rr

Note: 3. Pulse test

Rev.5.00 Sep 07, 2005 page 2 of 6

HAT2068R

Main Characteristics

Maximum Safe Operation Area

Power vs. Temperature Derating

500

100

4.0

3.0

2.0

1.0

Test Condition:

When using the glass epoxy board

(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s

Operation in

this area is

limited by R_{DS (on)}

0.1

Ta = 25°C

1 shot Pulse

0.01

0.1 0.3

100

150

200

Drain to Source Voltage V_DS(V)

Note 4:

Ambient Temperature Ta (°C)

When using the glass epoxy board

(FR4 40 × 40 × 1.6 mm)

Typical Output Characteristics

Typical Transfer Characteristics

Pulse Test

3.5 V

10 V

V_DS= 10 V

Pulse Test

4.5 V

4 V

V_GS= 3 V

25°C

Tc = 75°C

–25°C

Gate to Source Voltage V_GS(V)

Drain to Source Voltage V_DS(V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

0.20

100

Pulse Test

0.16

0.12

0.08

0.04

V_GS= 4.5 V

I_D= 10 A

10 V

5 A

2 A

0.1 0.2 0.5 1

5 10 20 50 100

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.5.00 Sep 07, 2005 page 3 of 6

HAT2068R

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

100

Pulse Test

Tc = –25°C

75°C

25°C

I_D= 2 A, 5 A

10 A

V_GS= 4.5 V

0.3

0.1

V_DS= 10 V

Pulse Test

2 A, 5 A, 10 A

10 V

–40

120

160

0.1 0.3

100

Case Temperature Tc (°C)

Drain Current I_D(A)

Typical Capacitance vs.

Drain to Source Voltage

Body-Drain Diode Reverse

Recovery Time

100

10000

3000

1000

Ciss

Coss

Crss

300

100

di / dt = 50 A / µs

V_GS= 0, Ta = 25°C

V_GS= 0

f = 1 MHz

0.1 0.2

0.5

10 20

40 50

Reverse Drain Current I_DR(A)

Drain to Source Voltage V_DS(V)

Dynamic Input Characteristics

Switching Characteristics

200

100

I_D= 14 A

V_GS

d(off)

V_DD= 25 V

10 V

5 V

V_DS

d(on)

V_DD= 25 V

10 V

5 V

V_GS= 10 V, V_DS= 10 V

Rg = 4.7 Ω, duty ≤ 1 %

100

0.1 0.2

0.5

10 20

Gate Charge Qg (nc)

Drain Current I_D(A)

Rev.5.00 Sep 07, 2005 page 4 of 6

HAT2068R

Reverse Drain Current vs.

Source to Drain Voltage

10 V

5 V

V_GS

= 0

Pulse Test

1.6 2.0

Source to Drain Voltage V_SD(V)

0.4

0.8

1.2

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

0.5

0.1

θch – f (t) = γ s (t) • θch – f

θch – f = 83.3°C/W, Ta = 25°C

When using the glass epoxy board

(FR4 40 × 40 × 1.6 mm)

0.01

D =

P_DM

0.001

0.0001

10 µ

100 µ

1 m

10 m

100 m

100

1000

10000

Pulse Width PW (S)

Switching Time Test Circuit

Switching Time Waveform

90%

Vout

Monitor

Vin Monitor

D.U.T.

10%

Vin

R_L

Vout

10%

V_DS

= 10 V

Vin

10 V

90%

d(off)

d(on)

Rev.5.00 Sep 07, 2005 page 5 of 6

HAT2068R

Package Dimensions

JEITA Package Code

RENESAS Code

PRSP0008DD-D

Package Name

FP-8DAV

MASS[Typ.]

0.085g

P-SOP8-3.95 × 4.9-1.27

b_p

Index mark

NOTE)

1. DIMENSIONS "*1(Nom)" AND "*2"

Terminal cross section

(Ni/Pd/Au plating)

DO NOT INCLUDE MOLD FLASH.

2. DIMENSION "*3" DOES NOT

INCLUDE TRIM OFFSET.

b_p

Dimension in Millimeters

Reference

Symbol

Min

Nom

4.90

3.95

Max

5.3

L₁

A₂

A₁

0.10

0.14

0.40

0.20

0.25

1.75

0.46

b_p

b₁

0.34

0.15

0.25

c₁

8°

H_E

5.80

6.10

1.27

6.20

Detail F

0.25

0.1

0.75

1.27

0.40

0.60

1.08

L₁

Ordering Information

Part Name

Quantity

Shipping Container

HAT2068R-EL-E

2500 pcs

Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.5.00 Sep 07, 2005 page 6 of 6

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

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publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

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Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

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7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2730-6071

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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

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Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

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Tel: <65> 6213-0200, Fax: <65> 6278-8001

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Tel: <82> 2-796-3115, Fax: <82> 2-796-2145

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Tel: <603> 7955-9390, Fax: <603> 7955-9510

Colophon .3.0

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