HAT2093R-EL-E
更新时间:2024-09-18 12:50:20
品牌:RENESAS
描述:Silicon N Channel Power MOS FET High Speed Power Switching
HAT2093R-EL-E 概述
Silicon N Channel Power MOS FET High Speed Power Switching 硅N沟道功率MOS FET高速电源开关 功率场效应晶体管
HAT2093R-EL-E 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | SOP |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.22 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 9 A | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.039 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
最大脉冲漏极电流 (IDM): | 72 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
HAT2093R-EL-E 数据手册
通过下载HAT2093R-EL-E数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载HAT2093R
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1185-0300
(Previous: ADE-208-1237A)
Rev.3.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
5 6
D D
5
6
7
2
G
4
G
8
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
4
3
2
1
S 1
S 3
MOS1
MOS2
Rev.3.00 Sep 07, 2005 page 1 of 3
HAT2093R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
Unit
V
30
±20
V
9
A
Note 1
Drain peak current
ID (pulse)
72
A
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Pch Note 3
Tch
9
A
2
W
W
°C
°C
Channel dissipation
3
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
30
±20
—
—
1.0
—
—
9
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
ID = 10 mA, VGS = 0
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
—
±10
1
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
VGS (off)
RDS (on)
RDS (on)
|yfs|
—
2.5
23
39
—
VDS = 10 V, ID = 1 mA
ID = 4.5 A, VGS = 10 V Note 4
ID = 4.5 A, VGS = 4.5 V Note 4
ID = 4.5 A, VDS = 10 V Note 4
VDS = 10 V
18
mΩ
mΩ
S
27
Forward transfer admittance
Input capacitance
15
Ciss
Coss
Crss
Qg
—
—
—
—
—
—
—
—
—
—
—
—
750
200
110
12
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
GS = 0
Output capacitance
—
f = 1 MHz
Reverse transfer capacitance
Total gate charge
—
—
VDD = 10 V
VGS = 10 V
ID = 9 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
2.3
2.2
11
—
Qgd
—
td (on)
tr
td (off)
tf
—
VGS = 10 V, ID = 4.5 A
VDD 10 V
RL = 2.22 Ω
Rg = 4.7 Ω
IF = 9 A, VGS = 0 Note 4
IF = 9 A, VGS = 0
diF/dt = 50 A/µs
Rise time
16
—
Turn-off delay time
40
—
Fall time
7
—
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
0.85
50
1.10
—
trr
ns
Note: 4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 3
HAT2093R
Package Dimensions
JEITA Package Code
RENESAS Code
PRSP0008DD-D
Package Name
FP-8DAV
MASS[Typ.]
0.085g
P-SOP8-3.95 × 4.9-1.27
1
D
*
bp
5
8
1
Index mark
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
4
Terminal cross section
(Ni/Pd/Au plating)
Z
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
3
bp
*
M
x
e
Dimension in Millimeters
Reference
Symbol
Min
Nom
4.90
3.95
Max
5.3
D
E
L1
A2
A1
A
0.10
0.14
0.40
0.20
0.25
1.75
0.46
bp
b1
0.34
0.15
c
0.25
c1
L
0
°
8°
y
HE
e
5.80
6.10
1.27
6.20
Detail F
x
0.25
0.1
y
Z
0.75
1.27
L
0.40
0.60
1.08
L1
Ordering Information
Part Name
Quantity
Shipping Container
HAT2093R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Colophon .3.0
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