HCS253D/SAMPLE [RENESAS]
HC/UH SERIES, DUAL 4 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDIP16;
| 型号： | HCS253D/SAMPLE |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | HC/UH SERIES, DUAL 4 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDIP16 CD 输出元件 逻辑集成电路 |
| 文件： | 总10页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCS253MS
Radiation Hardened
Dual 4-Input Multiplexer
September 1995
Features
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-
Day (Typ)
VCC
2 OE
S0
OE 1
S1
16
15
14
13
1
2
3
4
5
6
7
8
I3 1
I2 1
I1 1
I0 1
Y 1
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
2 I3
• Latch-Up Free Under Any Conditions
12 2 I2
2 I1
11
10 2 I0
2 Y
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
GND
9
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
• Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
VCC
2 OE
S0
OE 1
S1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
• Input Current Levels Ii ≤ 5µA at VOL, VOH
I3 1
I2 1
I1 1
I0 1
Y 1
2 I3
2 I2
2 I1
2 I0
2 Y
Description
The Intersil HCS253MS is a Radiation Hardened 4-to-1 line
selector multiplexer having three-state outputs. One of four
sources for each section is selected by the common select inputs
S0 and S1. When the output enable (1OE or 2OE) is HIGH, the
output is in the high impedance state.
GND
The HCS253MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS253MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCS253DMSR
TEMPERATURE RANGE
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
PACKAGE
o
o
-55 C to +125 C
16 Lead SBDIP
o
o
HCS253KMSR
-55 C to +125 C
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
HCS253D/Sample
HCS253K/Sample
HCS253HMSR
+25 C
o
+25 C
Sample
16 Lead Ceramic Flatpack
Die
o
+25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518765
File Number 3068.1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HCS253MS
Functional Diagram
20E
2I3
2I2
2I1
2I0
S0
14
S1
1I0
1I1
1I2
1I3
10E
15
13
12
11
10
2
5
4
3
1
6
20E
10E
20E
10E
16
8
VCC
GND
p
n
n
p
20E
20E
10E
10E
9
7
2Y
1Y
TRUTH TABLE
DATA INPUTS
OUTPUT
ENABLE
SELECT INPUTS
OUTPUT
S1
S0
X
L
I0
X
L
I1
I2
X
X
X
X
X
L
I3
OE
H
L
Y
Z
L
X
L
X
X
X
L
X
X
X
X
X
X
X
L
L
L
H
X
X
X
X
X
X
L
H
L
L
H
H
L
L
L
H
X
X
X
X
L
H
L
H
H
H
H
L
L
H
X
X
L
H
L
H
H
L
H
L
H
Select inputs S0 and S1 are common to both sections
H = High Level, L = Low Level, X = Immaterial, Z = High Impedance (Off)
Spec Number 518765
2
Specifications HCS253MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . . 114 C/W
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/ C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/ C
θ
θ
JA
JC
o
o
73 C/W
24 C/W
o
o
29 C/W
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
o
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
o
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
o
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
o
o
Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
2, 3
1
+25 C
-
40
o
o
+125 C, -55 C
-
750
µA
o
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
+25 C
7.2
6.0
-7.2
-6.0
-
-
-
-
mA
mA
mA
mA
o
o
2, 3
1
+125 C, -55 C
o
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
+25 C
o
o
2, 3
+125 C, -55 C
o
o
o
Output Voltage Low
VOL
VOH
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
-
-
0.1
0.1
-
V
V
V
V
o
o
o
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
+25 C, +125 C, -55 C
o
o
o
Output Voltage High
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
+25 C, +125 C, -55 C
VCC
-0.1
o
o
o
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
+25 C, +125 C, -55 C
VCC
-0.1
-
o
Input Leakage
Current
IIN
IOZ
FN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
+25 C
-
-
-
-
-
±0.5
±5.0
±1.0
±50
-
µA
µA
µA
µA
-
o
o
+125 C, -55 C
o
Three-State Output
Leakage Current
VCC = 5.5V, Applied
Voltage = 0V or VCC
1
+25 C
o
o
2, 3
+125 C, -55 C
o
o
o
Noise Immunity
Functional Test
VCC = 4.5V,
VIH = 0.7 (VCC),
VIL = 0.3 (VCC) (Note 2)
7, 8A, 8B
+25 C, +125 C, -55 C
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518765
3
Specifications HCS253MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
LIMITS
MIN
(NOTES 1, 2)
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MAX
26
31
19
22
21
24
17
20
15
17
18
19
16
17
UNITS
ns
o
Select to Output
TPHL
TPLH
VCC = 4.5V
9
10, 11
9
+25 C
2
2
2
2
2
2
2
2
2
2
2
2
2
2
o
o
+125 C, -55 C
ns
o
Data to Output
Enable to Output
Disable to Output
NOTES:
TPHL
TPLH
TPZH
TPZL
TPHZ
TPLZ
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
+125 C, -55 C
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MIN
MAX
45
UNITS
pF
o
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25 C
-
-
-
-
-
-
o
o
+125 C, -55 C
56
pF
o
Input Capacitance
Output Transition Time
NOTE:
CIN
VCC = 5.0V, f = 1MHz
VCC = 4.5V
+25 C
10
pF
o
o
+125 C, -55 C
10
pF
o
TTHL
TTLH
+25 C
12
ns
o
o
+125 C, -55 C
18
ns
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
Spec Number 518765
4
Specifications HCS253MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
(NOTES 1, 2)
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
CONDITIONS
TEMPERATURE
MIN
MAX
0.75
-
UNITS
mA
o
VCC = 5.5V, VIN = VCC or GND
+25 C
-
o
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25 C
6.0
mA
o
Output Current
(Source)
IOH
VOL
VOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25 C
-6.0
-
-
0.1
-
mA
V
o
Output Voltage Low
Output Voltage High
Input Leakage Current
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA
+25 C
o
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA
+25 C
VCC
-0.1
V
o
IIN
VCC = 5.5V, VIN = VCC or GND
+25 C
-
-
±5
µA
µA
o
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC,
VCC = 5.5V
+25 C
±50
o
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25 C
-
-
-
o
Select to Output
Data to Output
Enable to Output
Disable to Output
NOTES:
TPHL
TPLH
TPHL
TPLH
TPZL
TPZH
TPHZ
TPLZ
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25 C
2
2
2
2
2
2
2
2
31
31
22
24
17
20
19
17
ns
ns
ns
ns
ns
ns
ns
ns
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
o
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)
GROUP B
PARAMETER
SUBGROUP
DELTA LIMIT
12µA
ICC
5
5
5
IOL/IOH
-15% of 0 Hour
±200nA
IOZL/IOZH
Spec Number 518765
5
Specifications HCS253MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
GROUP A SUBGROUPS
READ AND RECORD
ICC, IOL/H
1, 7, 9
1, 7, 9
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
ICC, IOL/H
ICC, IOL/H
1, 7, 9
1, 7, 9, Deltas
Interim Test III (Postburn-In)
PDA
1, 7, 9
ICC, IOL/H
1, 7, 9, Deltas
Final Test
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Group A (Note 1)
Group B
Subgroup B-5
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
Subgroup B-6
Sample/5005
Sample/5005
1, 7, 9
1, 7, 9
Group D
NOTES:
1. Alternate group A inspection in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
METHOD
PRE RAD
POST RAD
PRE RAD
1, 9
POST RAD
5005
1, 7, 9
Table 4
Table 4 (Note 1)
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
7, 9 1 - 6, 8, 10 - 15
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
7, 9
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
1, 8, 15
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
-
16
1 - 6, 10 -16
16
-
-
-
8
-
-
-
7, 9
3 - 6, 10 - 14
2
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in
TABEL 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
1 - 6, 10 - 16
7, 9
8
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518765
6
HCS253MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% PIND, Method 2020, Condition A
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518765
7
HCS253MS
AC Load Circuit
AC Timing Diagrams
DUT
TEST
POINT
VIH
INPUT
VS
CL
RL
VIL
TPLH
TPHL
VOH
VOL
VOH
VOL
CL = 50pF
VS
OUTPUT
RL = 500Ω
TTLH
TTHL
80%
80%
20%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
0
UNITS
V
V
V
V
V
VIH
VS
VIL
GND
0
Three-State Low Load Circuit
Three-State Low Timing Diagrams
VIH
INPUT
VCC
RL
VS
VIL
TPZL
TPLZ
VOZ
VOL
TEST
POINT
DUT
VT
VW
OUTPUT
CL
CL = 50pF
RL = 500Ω
THREE-STATE LOW VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
2.25
0.90
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
Spec Number 518765
8
HCS253MS
Three-State High Load Circuit
Three-State High Timing Diagrams
DUT
TEST
POINT
VIH
INPUT
VS
CL
RL
VIL
TPZL
TPLZ
VOH
VOZ
CL = 50pF
VT
VW
OUTPUT
RL = 500Ω
THREE-STATE HIGH VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
2.25
3.60
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 518765
9
HCS253MS
Die Characteristics
DIE DIMENSIONS:
84 x 84 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCS253MS
I3 1 (3)
I2 1 (4)
(14) S0
(13) 2 I3
(12) 2 I2
I1 1 (5)
(11) 2 I1
(10) 2 I0
I0 1 (6)
Spec Number 518765
10
相关型号：
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