HGTD6N120B3S [RENESAS]
1200V, N-CHANNEL IGBT, TO-252AA;型号: | HGTD6N120B3S |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 1200V, N-CHANNEL IGBT, TO-252AA 双极性晶体管 |
文件: | 总1页 (文件大小:22K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
HGTD6N50E1
Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-251AA
FAIRCHILD
HGTD6N50E1S
Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-252AA
FAIRCHILD
HGTD6N50E1S9A
Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-252AA
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明