概述
规格参数
数据手册HIT468-EQ 概述
Silicon NPN Epitaxial NPN硅外延 小信号双极晶体管
HIT468-EQ 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | TO-92 |
| 包装说明： | LEAD FREE, SC-51, TO-92MOD, 3 PIN | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.74 |
| 其他特性： | NOT FOR AUTOMOTIVE OR INDUSTRIAL USE | 最大集电极电流 (IC)： | 1 A |
| 集电极-发射极最大电压： | 25 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 40 | JEDEC-95代码： | TO-92 |
| JESD-30 代码： | O-PBCY-T3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | ROUND | 封装形式： | CYLINDRICAL |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | NPN |
| 最大功率耗散 (Abs)： | 0.8 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | NO |
| 端子面层： | NOT SPECIFIED | 端子形式： | THROUGH-HOLE |
| 端子位置： | BOTTOM | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | AMPLIFIER | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
HIT468-EQ 数据手册
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PDF下载HIT468
Silicon NPN Epitaxial
REJ03G1502-0200
Rev.2.00
Mar 05, 2007
Features
•
•
Low frequency power amplifier
Complementary pair with HIT562
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
45
25
6
1.0
1.5
V
V
V
A
A
W
°C
°C
1
IC (peak)
PC
*
0.8
150
–55 to +150
Tj
Tstg
Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20%
Rev.2.00 Mar 05, 2007 page 1 of 4
HIT468
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
Min
45
25
6
—
—
45
85
40
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
Unit
V
V
Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
IC = 10 µA, IE = 0
IC = 100 µA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 45 V, IE = 0
VEB = 6 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 800 mA
IC = 800 mA, IB = 80 mA
VCE = 1 V, IC = 10 mA
IC = 800 mA, IB = 80 mA
—
V
500
500
—
330
—
0.5
1.0
1.2
nA
nA
—
—
—
V
Collector to emitter saturation voltage
Base to emitter voltage
Base to emitter saturation voltage
VCE(sat)
VBE
VBE(sat)
V
V
Rev.2.00 Mar 05, 2007 page 2 of 4
HIT468
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.2
1000
800
600
400
200
0
10 mA
9 mA
8 mA
7 mA
6 mA
0.8
2 mA
0.4
1 mA
IB = 0.1 mA
0
0
50
100
150
0
0.4
0.8
1.2
1.6
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
80
60
40
20
0
1000
500
µ
A
VCE = 2 V
Pulse
400
300
µ
µ
A
100
10
1
A
Ta = 75°C
200 µA
100 µA
25°C
µA
IB = 0.1
6.0
0
2.0
4.0
8.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Base to Emitter & Collector to Emitter
Saturation Voltage vs. Collector Current
10000
0.15
IC = 10 IB
Pulse
VCE = 2 V
Pulse
3000
1000
Ta = 75°C
25°C
-25°C
0.10
0.05
0
Ta = 75°C
25°C
300
100
VCE(sat)
30
10
1
10
100
1000
1
10
100
1000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Mar 05, 2007 page 3 of 4
HIT468
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name
MASS[Typ.]
0.35g
Unit: mm
TO-92 Mod / TO-92 ModV
4.8 0.4
3.8 0.4
0.65 0.1
0.75 Max
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
HIT468-EQ
HIT468TZ-EQ
2500 pcs
2500 pcs
Bulk, Vinyl Bag
Hold Box, Radial Taping
Note: This product is designed for consumer use and not for automotive.
Rev.2.00 Mar 05, 2007 page 4 of 4
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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Colophon .7.0
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