HITK0203MP_12 [RENESAS]

Silicon N Channel MOS FET Power Switching; 硅N沟道MOS FET电源开关


型号：	HITK0203MP_12
厂家：	RENESAS TECHNOLOGY CORP
描述：	Silicon N Channel MOS FET Power Switching 硅N沟道MOS FET电源开关开关电源开关
文件：	总7页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

HITK0203MP

20V, 2.9A, 90mmax.

Silicon N Channel MOS FET

Power Switching

R07DS0481EJ0200

Rev.2.00

May 09, 2012

Features



Low on-resistance

_DS(on)= 68 m typ (V_GS= 4.5 V, I_D= 1.5 A)



Low drive current

High speed switching

2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is “SV”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

12

2.9

Note1

Drain peak current

I_D(pulse)

Body - drain diode reverse drain current

Channel dissipation

I_DR

2.9

Note2

Pch

Tch

Tstg

0.8

C

Channel temperature

150

Storage temperature

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 1 of 6

HITK0203MP

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

12

—

Typ

—

Max

—

Unit

Test conditions

Drain to source breakdown voltage V_(BR)DSS

I_D= 10 mA, V_GS= 0

I_G= 100 A, V_DS= 0

V_GS= 10 V, V_DS= 0

V_DS= 20 V, V_GS= 0

V_DS= 10 V, I_D= 1 mA

I_D= 1.5 A, V_GS= 4.5 V^Note3

I_D= 1.5 A, V_GS= 2.5 V^Note3

I_D= 1.5 A, V_DS= 10 V^Note3

V_DS= 10 V

Gate to source breakdown voltage

Gate to source leak current

V_(BR)GSS

I_GSS

—

10

A

Drain to source leak current

I_DSS

—

Gate to source cutoff voltage

Drain to source on state resistance

V_GS(off)

R_DS(on)

|y_fs|

0.4

—

1.4

150

—

m

—

105

5.0

159

Forward transfer admittance

Input capacitance

3.0

—

Ciss

Coss

Crss

t_d(on)

t_r

—

_GS= 0

f = 1 MHz

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

—

I_D= 1.5 A

_GS= 4.5 V

R_L= 6.6 

Rg = 4.7 

—

Turn - off delay time

Fall time

t_d(off)

t_f

—

Total gate charge

—

1.9

0.4

0.5

0.85

—

V_DD= 10 V

_GS= 4.5 V

I_D= 2.9A

I_F= 2.9 A, V_GS= 0 ^Note3

Gate to source charge

Gate to drain charge

Body - drain diode forward voltage

Notes: 3. Pulse test

Qgs

Qgd

V_DF

—

1.1

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 2 of 6

HITK0203MP

Preliminary

Main Characteristics

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

100

Operation in this area

is limited by R_DS(on)

0.8

0.6

0.4

0.2

0.1

0.01

Ta = 25°C

1 Shot Pulse

100

150

0.01

0.1

100

Ambient Temperature Ta (°C)

Drain to Source Voltage V_DS(V)

*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)

Typical Transfer Characteristics (1)

Typical Output Characteristics

5 V

10 V

V_DS= 10 V

Pulse Test

2.4 V

2.2 V

Pulse Test

Tc = 25

2.6 V

2.8 V

3 V

2.0 V

1.8 V

1.6 V

1.4 V

= 0 V

Tc = 75°C

25°C

–25°C

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Gate to Source Cutoff Voltage vs.

Case Temperature

Typical Transfer Characteristics (2)

1.5

V_DS= 10 V

Pulse Test

V_DS= 10 V

Pulse Test

0.1

I_D= 10 mA

Tc = 75°C

25°C

0.01

0.5

1 mA

0.001

0.1 mA

–25°C

0.0001

–25

25 50 75 100 125 150

0.5

1.5

2.5

Case Temperature Tc (°C)

Gate to Source Voltage V_GS(V)

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 3 of 6

HITK0203MP

Preliminary

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

1000

100

500

Pulse Test

Tc = 25°C

Pulse Test

Tc = 25°C

400

300

V_GS= 2.5 V

4.5 V

10 V

200

100

2.9 A

1.5 A

1 A

0.5 A

0.1

100

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Static Drain to Source on State Resistance

vs. Case Temperature

Static Drain to Source on State Resistance

vs. Case Temperature

180

120

Pulse Test

V_GS= 4.5 V

110

160

I_D= 2.9 A

1.5 A

I_D= 2.9 A

100

140

1.5 A

120

100

1 A

0.5 A

1 A

Pulse Test

V_GS.5 V

0.5 A

–25

25 50 75 100 125 150

–25

25 50 75 100 125 150

Case Temperature Tc (°C)

Zero Gate Voltage Drain current vs.

Case Temperature

Forward Transfer Admittance vs.

Drain Current

10000

1000

100

–25°C

Pulse Test

V_GS= 0 V

V_DS= 20 V

25°C

Tc = 75°C

Pulse Test

V_DS= 10 V

0.1

–25

0.1

0.01

25 50 75 100 125 150

0.1

100

Drain Current I_D(A)

Case Temperature Tc (°C)

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 4 of 6

HITK0203MP

Preliminary

Switching Characteristics

V_DD= 10 V

V_GS= 4.5 V

Dynamic Input Characteristics

V_GS

1000

100

Rg = 4.7 Ω

= 5 μs

Tc = 25°C

5 V

d(off)

V_DD= 20 V

10 V

V_DD= 20 V

10 V

d(on)

5 V

I_D= 2.9 A

Tc = 25°C

V_DS

0.1

Drain Current I_D(A)

Gate Charge Qg (nc)

Input Capacitance vs.

Gate to Source Voltage

Typical Capacitance vs.

Drain to Source Voltage

320

300

280

260

240

220

1000

100

Ciss

Coss

Crss

V_DS= 0 V

f = 1 MHz

V_GS= 0 V

f = 1 MHz

200

–

Gate to Source Voltage V_GS(V)

Drain to Source Voltage V_DS(V)

Body-Drain Diode Forward Voltage vs.

Case Temperature

Reverse Drain Current vs.

Source to Drain Voltage

0.6

Pulse Test

Tc = 25°C

10 V

V_GS= 0

0.5

5 V

I_D= 10 mA

0.4

0.3

1 mA

125

0.2

0.1

–5, –10 V

V_GS= 0 V

0.4

0.8

1.2

1.6

2.0

100

150

Source to Drain Voltage V_SD(V)

Case Temperature Tc (°C)

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 5 of 6

HITK0203MP

Preliminary

Package Dimensions

Package Name

MPAK

JEITA Package Code

SC-59A

RENESAS Code

PLSP0003ZB-A

Previous Code

MASS[Typ.]

0.011g

MPAK(T) / MPAK(T)V

Dimension in Millimeters

Min Nom Max

Reference

Symbol

A₁

A₂

A₃

H_E

L₁

L_P

b₂

e₁

I₁

1.0

1.3

0.1

1.2

1.1

0.25

0.4

0.35

0.1

2.7

1.35

0.5

0.16 0.26

3.1

e₁

1.5

0.95

2.8

1.65

2.2

3.0

0.35

0.15

0.25

0.75

0.55

0.65

0.05

0.55

1.95

0.3

1.05

A-A Section

Pattern of terminal position areas

Ordering Information

Orderable Part Number

Quantity

Shipping Container

178 mm reel, 8 mm Emboss taping

HITK0203MPTL-HQ

3000 pcs.

Note: This product is designed for consumer use and not for automotive.

R07DS0481EJ0200 Rev.2.00

May 09, 2012

Page 6 of 6

Notice

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Colophon 2.2

HITK0203MP_12 [RENESAS]

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