HN58C256ATI10E [RENESAS]
HN58C256ATI10E;
| 型号： | HN58C256ATI10E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | HN58C256ATI10E 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管 内存集成电路 |
| 文件： | 总18页 (文件大小：1048K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HN58C256AI Series
256k EEPROM (32-kword × 8-bit)
Description
R10DS0218EJ0100
Rev.1.00
Oct 07, 2013
Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word × 8-bit.
They have realized high speed low power consumption and high reliability by employing advanced MNOS memory
technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make
their write operations faster.
Features
•
•
•
Single 5 V supply: 5 V 10%
Access time: 85 ns/100 ns (max)
Power dissipation
⎯ Active: 20 mW/MHz, (typ)
⎯ Standby: 110 μW (max)
•
•
•
•
•
•
•
•
•
•
•
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms max
Automatic page write (64 bytes): 10 ms max
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
105 erase/write cycles (in page mode)
10 years data retention
Software data protection
There are lead free products
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 1 of 16
HN58C256AI Series
Ordering Information
Access
time
85ns
Shipping
Container
Orderable Part Name
HN85C256API85E
HN85C256API10E
HN85C256AFPI85E
HN85C256AFPI10E
HN85C256AFPI85EZ
HN85C256AFPI10EZ
HN85C256ATI85E
HN85C256ATI10E
Package
Quantity
600mil 28-pin plastic DIP
PRDP0028AB-A (DP-28V)
Tube
Max. 13 pcs/tube
Max. 325 pcs/inner box
100ns
85ns
400mil 28-pin plastic SOP
PRSP0028DC-A (FP-28DV)
Tube
Max. 25 pcs/tube
Max. 1,000 pcs/inner box
100ns
85ns
Tape and reel 1,000 pcs/reel
100ns
85ns
28-pin plastic TSOP
PTSA0028ZB-A (TFP-28DBV)
Tray
Max. 60 pcs/tray
Max. 600 pcs/inner box
100ns
Pin Arrangement
HN58C256API/AFPI Series
HN58C256ATI Series
A2
A1
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14
13
12
11
10
9
A3
A14
A12
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
A4
A0
A5
I/O0
I/O1
I/O2
VSS
A6
A7
A12
A14
VCC
8
I/O3
I/O4
I/O5
I/O6
I/O7
7
6
WE
A13
A8
5
4
3
A9
2
A11
CE
9
CE
1
A10
OE
A0
10
11
12
13
14
I/O7
I/O6
I/O5
I/O4
I/O3
(Top view)
I/O0
I/O1
I/O2
VSS
(Top view)
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 2 of 16
HN58C256AI Series
Pin Description
Pin Name
Function
A0 to A14
I/O0 to I/O7
OE
CE
WE
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
VCC
VSS
NC
No connection
Block Diagram
to
I/O0
I/O7
VCC
VSS
High voltage generator
I/O buffer
and
input latch
OE
CE
Control logic and timing
WE
A0
to
A5
Y gating
Y decoder
X decoder
Address
buffer and
latch
Memory array
Data latch
A6
to
A14
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 3 of 16
HN58C256AI Series
Operation Table
Operation
CE
OE
WE
I/O
Read
VIL
VIH
VIL
VIL
×
×
VIL
×
VIL
×*1
VIH
VIH
×
VIL
VIL
×
VIH
×
VIL
VIH
VIH
×
Dout
High-Z
Din
Standby
Write
Deselect
Write inhibit
High-Z
—
—
Data polling
Program reset
VIH
×
Dout (I/O7)
High-Z
Note: 1. Don’t care
Absolute Maximum Ratings
Parameter
Power supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*2
Storage temperature range
Symbol
Value
Unit
V
VCC
Vin
–0.6 to +7.0
–0.5*1 to +7.0*3
–40 to +85
V
Topr
Tstg
°C
°C
–55 to +125
Notes: 1. Vin min: –3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed VCC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
VCC
Min
4.5
Typ
5.0
0
Max
5.5
0
Unit
Supply voltage
Input voltage
V
V
VSS
VIL
0
–0.3*1
—
0.6
VCC + 0.3*2
V
VIH
3.0
—
V
Operating temperature
Topr
–40
—
+85
°C
Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns
2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 4 of 16
HN58C256AI Series
DC Characteristics
(Ta = –40 to +85°C, VCC = 5.0 V 10%)
Parameter
Symbol
ILI
Min
—
Typ
—
Max
2
Unit
μA
μA
μA
mA
mA
Test conditions
VCC = 5.5 V, Vin = 5.5 V
VCC = 5.5 V, Vout = 5.5/0.4 V
CE = VCC
CE = VIH
Iout = 0 mA, Duty = 100%,
Input leakage current
Output leakage current
Standby VCC current
ILO
—
—
2
ICC1
ICC2
ICC3
—
—
20
1
—
—
Operating VCC current
—
—
12
Cycle = 1 μs, VCC = 5.5 V
—
—
30
mA
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns, VCC = 5.5 V
Output low voltage
Output high voltage
VOL
VOH
—
—
—
0.4
—
V
V
IOL = 2.1 mA
VCC × 0.8
IOH = –400 μA
Capacitance
(Ta = +25°C, f = 1 MHz)
Test conditions
Vin = 0 V
Parameter
Symbol
Min
—
Typ
—
Max
6
Unit
pF
Input capacitance*1
Output capacitance*1
Cin
Cout
—
—
12
pF
Vout = 0 V
Note: 1. This parameter is periodically sampled and not 100% tested.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 5 of 16
HN58C256AI Series
AC Characteristics
(Ta = –40 to +85°C, VCC = 5.0 V 10%)
Test Conditions
•
•
•
•
•
Input pulse levels: 0.4 V to 3.0 V
Input rise and fall time: ≤ 5 ns
Input timing reference levels: 0.8, 2.0 V
Output load: 1TTL Gate +100 pF
Output reference levels: 1.5 V, 1.5 V
Read Cycle
HN58C256API/AFPI/ATI
-85 -10
Parameter
Symbol
tACC
tCE
Min
—
—
10
0
Max
85
Min
—
—
10
0
Max
100
100
50
Unit
ns
Test conditions
CE = OE = VIL, WE = VIH
OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = VIL, WE = VIH
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*1
85
ns
tOE
40
ns
tOH
—
—
ns
tDF
0
40
0
40
ns
Write Cycle
Parameter
Address setup time
Symbol
tAS
Min*2
Typ
Max
Unit
Test conditions
0
50
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
30
—
10*3
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ms
ns
ns
Address hold time
tAH
CE to write setup time (WE controlled)
CE hold time (WE controlled)
WE to write setup time (CE controlled)
WE hold time (CE controlled)
OE to write setup time
OE hold time
tCS
tCH
0
tWS
tWH
tOES
tOEH
tDS
0
0
0
0
Data setup time
50
0
Data hold time
tDH
WE pulse width (WE controlled)
CE pulse width (CE controlled)
Data latch time
tWP
tCW
tDL
100
100
50
0.2
100
—
120
0*4
Byte load cycle
tBLC
tBL
tWC
tDB
Byte load window
Write cycle time
Time to device busy
Write start time
tDW
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are no longer
driven.
2. Use this device in longer cycle than this value.
3. tWC must be longer than this value unless polling techniques are used. This device automatically completes
the internal write operation within this value.
4. Next read or write operation can be initiated after tDW if polling techniques are used.
5. A6 through A14 are page address and these addresses are latched at the first falling edge of WE.
6. A6 through A14 are page address and these addresses are latched at the first falling edge of CE.
7. See AC read characteristics.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 6 of 16
HN58C256AI Series
Timing Waveforms
Read Timing Waveform
Address
tACC
CE
tOH
tCE
OE
tDF
tOE
High
WE
Data Out
Data out valid
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 7 of 16
HN58C256AI Series
Byte Write Timing Waveform (1) (WE Controlled)
tWC
Address
tCS tAH
tCH
CE
tAS
tBL
tWP
WE
tOES
tOEH
OE
tDS
tDH
Din
VCC
Byte Write Timing Waveform (2) (CE Controlled)
Address
tWC
tWS
tAH
tBL
tCW
CE
WE
OE
tAS
tWH
tOES
tOEH
tDH
tDS
Din
VCC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 8 of 16
HN58C256AI Series
Page Write Timing Waveform (1) (WE Controlled)
Address*7
A0 to A14
tAH
tWP
tAS
tBL
WE
CE
tDL
tBLC
tWC
tCS
tCH
tOEH
tOES
tDH
OE
tDS
Din
VCC
Page Write Timing Waveform (2) (CE Controlled)
Address*8
A0 to A14
tAH
tCW
tAS
tBL
CE
tDL
tBLC
tWC
tWS
tWH
WE
tOEH
tOES
tDS
tDH
OE
Din
VCC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 9 of 16
HN58C256AI Series
Data Polling Timing Waveform
Address
An
An
An
CE
*9
tCE
WE
OE
tOES
tOEH
*9
tOE
tDW
Din X
Dout X
Dout X
I/O7
tWC
Toggle bit
This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal
programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.
Toggle bit Waveform
Notes: 1. I/O6 beginning state is "1".
2. I/O6 ending state will vary.
3. See AC read characteristics.
4. Any address location can be used, but the address must be fixed.
Next mode
*4
Address
*3
t
CE
CE
WE
*3
OE
t
OE
t
t
OES
OEH
*1
*2
*2
Din
Dout
Dout
Dout
Dout
I/O6
t
DW
t
WC
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 10 of 16
HN58C256AI Series
Software Data Protection Timing Waveform (1) (in protection mode)
VCC
CE
WE
tBLC
tWC
Address
Data
5555
AA
5555 Write address
A0 Write data
2AAA
55
Software Data Protection Timing Waveform (2) (in non-protection mode)
VCC
Normal active
mode
tWC
CE
WE
Address
Data
5555 2AAA 5555 5555 2AAA 5555
AA 55 80 AA 55 20
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 11 of 16
HN58C256AI Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle. Following
the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each additional byte load cycle
must be started within 30 μs from the preceding falling edge of WE or CE. When CE or WE is high for 100 μs after
data input, the EEPROM enters write mode automatically and the input data are written into the EEPROM.
Data Polling
Data polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is performing a write
operation.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 105 cycles in case of the page programming and 104 cycles in case of the byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 104
cycles.
Data Protection
To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width is 20 ns or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the control pins.
WE
CE
V
0 V
IH
V
IH
OE
0 V
20 ns max
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 12 of 16
HN58C256AI Series
2. Data Protection at VCC On/Off
When VCC is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as a trigger
and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM
must be kept in an unprogrammable state while the CPU is in an unstable state.
Note: The EEPROM shoud be kept in unprogrammable state during VCC on/off by using CPU RESET signal.
VCC
CPU
RESET
*
*
Unprogrammable
Unprogrammable
2.1 Protection by CE, OE, WE
To realize the unprogrammable state, the input level of control pins must be held as shown in the table below.
CE
OE
WE
VCC
×
×
×
VSS
×
×
×
VCC
×: Don’t care
VCC: Pull-up to VCC level
V
SS: Pull-down to VSS level
3. Software data protection
To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is
enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the 3 bytes code is input.
To program data in the SDP enable mode, 3 bytes code must be input before write data.
Address
Data
5555
AA
↓
↓
2AAA
↓
55
↓
5555
↓
A0
↓
Write address Write data } Normal data input
The SDP mode is disabled by inputting the following 6 bytes code. Note that, if data is input in the SDP disable
cycle, data can not be written.
Address
Data
5555
↓
AA
↓
2AAA
↓
55
↓
5555
↓
80
↓
5555
↓
AA
↓
2AAA
↓
55
↓
5555
20
The software data protection is not enabled at the shipment.
Note: There are some differences between Renesas Electronics' and other company’s for enable/disable sequence of
software data protection. If there are any questions, please contact with Renesas Electronics' sales offices.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 13 of 16
HN58C256AI Series
Package Dimensions
HN58C256API Series (PRDP0028AB-A / Previous Code: DP-28V)
JEITA Package Code
RENESAS Code
PRDP0028AB-A
Previous Code
DP-28/DP-28V
MASS[Typ.]
4.6g
P-DIP28-13.4x35.6-2.54
D
28
15
1
14
b 3
Z
Dimension in Millimeters
Min Nom Max
15.24
Reference
Symbol
e1
D
E
A
A1
bp
b3
c
35.6 36.5
13.4 14.6
5.70
bp
e
c
0.51
e1
0.38 0.48 0.58
1.2
0.20 0.25 0.36
θ
0° 15°
2.29 2.54 2.79
1.9
e
Z
L
2.54
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 14 of 16
HN58C256AI Series
HN58C256AFPI Series (PRSP0028DC-A / Previous Code: FP-28DV)
JEITA Package Code
P-SOP28-8.4x18.3-1.27
RENESAS Code
PRSP0028DC-A
Previous Code
FP-28D
MASS[Typ.]
0.7g
D
F
NOTE)
1. DIMENSION"*1"
28
15
DOES NOT INCLUDE MOLD FLASH.
2. DIMENSION"*2"DOES NOT
INCLUDE TRIM OFFSET.
bp
b1
Index mark
Terminal cross section
Dimension in Millimeters
Reference
1
14
Symbol
*2
Min Nom Max
e
bp
Z
x
M
L1
D
18.3 18.8
8.4
E
A2
A1
A
0.10 0.20 0.30
2.50
bp
b1
c
0.32 0.40 0.48
0.38
0.12 0.17 0.22
0.15
y
L
c1
θ
HE
e
0°
8°
Detail F
11.5 11.8 12.1
1.27
0.20
x
y
0.15
1.12
Z
L
0.8 1.0 1.2
1.7
L1
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 15 of 16
HN58C256AI Series
HN58C256ATI Series (PTSA0028ZB-A / Previous Code: TFP-28DBV)
JEITA Package Code
P-TSOP(1)28-8x11.8-0.55
RENESAS Code
PTSA0028ZB-A
Previous Code
TFP-28DB/TFP-28DBV
MASS[Typ.]
0.23g
NOTE)
1. DIMENSION"*1"AND"*2(Nom)"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
HD
A
*1
Index mark
D
1
28
bp
b1
15
14
Terminal cross section
Dimension in Millimeters
Reference
Symbol
Min Nom Max
11.80
F
D
E
A2
A1
A
8.00 8.20
L1
0.05 0.13 0.20
1.20
bp
b1
c
0.14 0.22 0.30
0.20
0.12 0.17 0.22
0.15
c1
θ
HD
e
0°
5°
13.10 13.40 13.70
L
0.55
Detail F
x
0.10
y
0.10
0.45
Z
L
0.40 0.50 0.60
0.80
L1
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 16 of 16
Revision History
HN58C256AI Series Data Sheet
Description
Summary
Rev.
Date
Page
Rev.1.00 Oct 07, 2013
—
Initial issue
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Notice
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contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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