HSB2838CM [RENESAS]
RECTIFIER DIODES,COMMON CATHODE,85V V(RRM),SC-70;
| 型号： | HSB2838CM |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RECTIFIER DIODES,COMMON CATHODE,85V V(RRM),SC-70 二极管 开关 |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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contained therein.
HSB2838
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-486A (Z)
Rev.1
Mar. 2002
Features
•
•
Fast recovery time.
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSB2838
A6
CMPAK
Pin Arrangement
3
1. Anode
2. Anode
2
1
(Top View)
3. Cathode
HSB2838
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VRM
Value
Unit
V
Peak reverse voltage
Reverse voltage
85
VR
80
V
Average rectified current
Peak forward current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. Two device total.
IO *1
100
mA
mA
A
1
IFM
*
300
2
IFSM
Tj
*
4
125
°C
°C
Tstg
−55 to +125
2. Value at duration of 1 µsec, two device total.
Electrical Characteristics *
(Ta = 25°C)
Item
Symbol Min
Typ
Max
1.0
1.0
1.2
0.1
2.0
3.0
Unit Test Condition
Forward voltage
VF1
VF2
VF3
IR
V
IF = 10 mA
IF = 50 mA
IF = 100 mA
Reverse current
µA
pF
ns
VR = 80 V
Capacitance
C
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V, RL = 50 Ω
Reverse recovery time
Note: Per one device.
trr
Rev.1, Mar. 2002, page 2 of 2
HSB2838
Main Characteristic
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-6
10-7
10-8
10-9
10-10
0
0.2
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0.4
0.6
0.8
1.0
0
20
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
40
60
80
100
f=1MHz
10
1.0
0.1
1.0
10
100
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1, Mar. 2002, page 3 of 3
HSB2838
Package Dimensions
As of July, 2001
Unit: mm
2.0 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
(0.65) (0.65)
1.3 0.2
Hitachi Code
JEDEC
CMPAK
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.1, Mar. 2002, page 4 of 4
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