HSL276A [RENESAS]

Silicon Schottky Barrier Diode for Detector; 硅肖特基二极管检测器
HSL276A
型号: HSL276A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Schottky Barrier Diode for Detector
硅肖特基二极管检测器

整流二极管 肖特基二极管 光电二极管
文件: 总5页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HSL276A  
Silicon Schottky Barrier Diode for Detector  
REJ03G0528-0100  
Rev.1.00  
Feb 09, 2005  
Features  
High forward current, Low capacitance.  
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
HSL276A  
Laser Mark  
Renesas Code  
PXSF0002ZA-A  
Previous Code  
0
EFP  
Pin Arrangement  
Cathode mark  
Mark  
1
2
1. Cathode  
2. Anode  
Rev.1.00 Feb 09, 2005 page 1 of 4  
HSL276A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Symbol  
Value  
Repetitive peak reverse voltage  
VRRM  
5
V
Reverse voltage  
VR  
IO  
Tj  
3
30  
125  
V
Average rectified current  
Junction temperature  
Storage temperature  
mA  
°C  
°C  
Tstg  
55 to +125  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
Item  
Symbol  
VR  
IR  
IF  
Min  
3.0  
Typ  
Max  
Unit  
Reverse voltage  
Reverse current  
Forward current  
Capacitance  
V
µA  
mA  
pF  
V
IR = 1 mA  
50  
VR = 0.5 V  
VF = 0.5 V  
VR = 0.5 V, f = 1 MHz  
C = 200 pF, RL = 0 , Both forward  
and reverse direction 1 pulse.  
35  
C
0.85  
ESD-Capability *1  
30  
Notes: 1. Failure criterion ; IR > 100 µA at VR =0.5 V  
2. Please do not use the soldering iron due to avoid high stress to the EFP package.  
3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as  
unquestioned. Please kindly consider soldering nature.  
Rev.1.00 Feb 09, 2005 page 2 of 4  
HSL276A  
Main Characteristic  
10–2  
10–3  
10–4  
10–5  
10–6  
10–1  
10–2  
10–3  
Ta = 75°C  
Ta = 25°C  
Ta = 75°C  
Ta = 25°C  
10–4  
10–5  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
1.0  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
2.0  
3.0  
4.0  
5.0  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
f=1MHz  
10  
1.0  
0.1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.1.00 Feb 09, 2005 page 3 of 4  
HSL276A  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
EFP / EFPV  
MASS[Typ.]  
0.0007g  
PXSF0002ZA-A  
D
b
E
H
E
c
e
1
Dimension in Millimeters  
Reference  
Symbol  
φ
b
A
Min  
0.44  
0.25  
Nom  
0.47  
Max  
0.50  
0.35  
A
b
0.30  
c
0.08  
0.55  
0.75  
0.95  
0.13  
0.60  
0.80  
0.18  
0.65  
0.85  
1.05  
D
E
1.00  
0.40  
H
φ
E
b
Pattern of terminal position areas  
e
1
1.00  
Rev.1.00 Feb 09, 2005 page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
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publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
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Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
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is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
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http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
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Tel: <852> 2265-6688, Fax: <852> 2730-6071  
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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
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Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
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Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 2.0  

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