HSS82TE [RENESAS]

0.15A, SILICON, SIGNAL DIODE, DO-34;
HSS82TE
型号: HSS82TE
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

0.15A, SILICON, SIGNAL DIODE, DO-34

整流二极管 开关 高压
文件: 总5页 (文件大小:145K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HSS82  
Silicon Epitaxial Planar Diode for High Voltage Switching  
REJ03G0569-0300  
(Previous: ADE-208-176B)  
Rev.3.00  
Mar 22, 2005  
Features  
High reverse voltage. (VR = 200 V)  
Suitable for 5 mm pitch high speed automatically insertion.  
Small glass package (MHD) enables easy mounting and high reliability.  
Ordering Information  
Package Code  
(Previous Code)  
Type No.  
Cathode band  
Package Name  
HSS82  
Navy Blue  
MHD  
GRZZ0002ZC-A  
(MHD)  
Pin Arrangement  
2
1
Cathode band  
1. Cathode  
2. Anode  
Rev.3.00 Mar 22, 2005 page 1 of 4  
HSS82  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
V
Item  
Peak reverse voltage  
Reverse voltage  
Average rectified current  
Peak forward current  
Symbol  
Value  
250  
200  
150  
625  
1
2
VRM  
VR  
IO  
*
V
mA  
mA  
A
IFM  
Non-Repetitive peak forward surge current IFSM  
*
1
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
Tstg  
400  
200  
65 to +175  
mW  
°C  
°C  
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.  
2. Within 1s forward surge current.  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
VR = 200 V  
VR = 250 V  
IF = 100 mA  
Item  
Reverse current  
Symbol  
Min  
Typ  
1.5  
Max  
200  
100  
1.0  
100  
Unit  
nA  
µA  
V
pF  
ns  
IR1  
IR2  
VF  
C
Forward voltage  
Capacitance  
VR = 0 V, f = 1 MHz  
IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω  
Reverse recovery time  
trr  
Rev.3.00 Mar 22, 2005 page 2 of 4  
HSS82  
Main Characteristic  
10-1  
10-5  
Ta = 75  
°
C
C
10-6  
10-2  
Ta = 50  
°
10-7  
10-3  
Ta = 25°C  
10-8  
10-4  
10-9  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
1.2  
0
50  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
100 150 200 250 300  
f = 1MHz  
10  
1.0  
0.1  
1.0  
10  
100  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.3.00 Mar 22, 2005 page 3 of 4  
HSS82  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
MHD / MHDV  
MASS[Typ.]  
0.084g  
GRZZ0002ZC-A  
L
E
L
φb  
φD  
Reference  
Symbol  
Dimension in Millimeters  
Min  
Nom Max  
φb  
φD  
E
-
-
-
-
-
0.4  
2.0  
-
2.4  
-
L
26.0  
-
Rev.3.00 Mar 22, 2005 page 4 of 4  
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