HVB387BWK [RENESAS]
Variable Capacitance Diode for VCO; 变容二极管的VCO型号: | HVB387BWK |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Variable Capacitance Diode for VCO |
文件: | 总5页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVB387BWK
Variable Capacitance Diode for VCO
REJ03G0488-0200
(Previous: ADE-208-1174A)
Rev.2.00
Jan 12, 2005
Features
•
•
•
•
Low capacitance and to be usable at GHz.
High capacitance ratio. (n = 1.80 min)
Low series resistance. (rs = 1.20 Ω max)
CMPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HVB387B
V5
CMPAK
Pin Arrangement
node
de
de
Rev.2.00 Jan 12, 2005 page 1 of 4
HVB387BWK
Absolute Maximum Ratings *1
(Ta = 25°C)
Item
Symbol
Value
15
Unit
Reverse voltage
VR
V
Junction temperature
Storage temperature
Note: 1. Per one device.
Tj
125
°C
°C
Tstg
−55 to +125
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol
IR1
Min
Typ
—
Max
10
Unit
Test Condition
Reverse current
—
—
nA
VR = 15 V
VR = 15 V, Ta = 60°C
IR2
C1
C3
n
—
100
5.00
2.80
2.60
1.20
Capacitance
4.50
85
—
pF
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
C1 / C3
—
Capacitance ratio
Series resistance
—
—
—
Ω
VR = 1 V, f = 470 MHz
Note: 1. Per one
Rev.2.00 Jan 12, 2005 page 2 of 4
HVB387BWK
Main Characteristic
10-10
12
10
f=1MHz
10-11
10-12
10-13
10-14
8
6
4
2
0
0
4
20
1.0
Reverse voltage VR (V)
10
0.1
R
Fig.2 Capacitance vs. Reverse voltage
Fig.1 Revers
0
1.6
1.4
1.2
1.0
0.8
0.6
-2.0
0.4
0.2
1.0
5.0
0.1
0.1
10
1.0
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 Linearity factor vs. Reverse voltage
Rev.2.00 Jan 12, 2005 page 3 of 4
HVB387BWK
Package Dimensions
As of January, 2003
Unit: mm
2.0 ± 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
(0.65) (0.65)
1.3 ± 0.2
Package Code
JEDEC
CMPAK
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.2.00 Jan 12, 2005 page 4 of 4
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