HVC316 [RENESAS]

Variable Capacitance Diode for BS/CS tuner; 变容二极管的BS / CS调谐器
HVC316
型号: HVC316
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Variable Capacitance Diode for BS/CS tuner
变容二极管的BS / CS调谐器

二极管 变容二极管
文件: 总5页 (文件大小:153K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVC316  
Variable Capacitance Diode for BS/CS tuner  
REJ03G0516-0100  
(Previous: ADE-208-1124)  
Rev.1.00  
Feb 16, 2005  
Features  
High capacitance ratio (n = 9.0 min)  
Low series resistance. (rs = 2.2 max)  
Ultra small Flat Lead Package (UFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
HVC316  
Laser Mark  
Renesas Code  
PWSF0002ZA-A  
Previous Code  
N
UFP  
Pin Arrangement  
Cathode mark  
Mark  
1
2
1. Cathode  
2. Anode  
Rev.1.00 Feb 16, 2005 page 1 of 4  
HVC316  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
V
Item  
Symbol  
Value  
30  
Reverse voltage  
VR  
Junction temperature  
Storage temperature  
Tj  
Tstg  
125  
55 to +125  
°C  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
VR = 30 V  
VR = 30 V, Ta = 60°C  
VR = 1 V, f = 1 MHz  
VR = 25V, f = 1 MHz  
C1 / C25  
Item  
Reverse current  
Symbol  
IR1  
Min  
5.16  
0.48  
9.0  
Typ  
Max  
10  
100  
7.22  
0.76  
Unit  
nA  
IR2  
Capacitance  
C1  
pF  
C25  
n
Capacitance ratio  
Series resistance  
Matching error  
rS  
2.20  
6.00  
VR = 1 V, f = 470 MHz  
VR = 1 to 25 V, f = 1 MHz  
C/C *1  
%
Note: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel ,  
expect extention to another group.  
Calculate Matching Error,  
(Cmax – Cmin)  
C/C =  
× 100 (%)  
Cmin  
Rev.1.00 Feb 16, 2005 page 2 of 4  
HVC316  
Main Characteristic  
10-6  
10  
8
f=1MHz  
10-7  
10-8  
10-9  
6
10-10  
4
2
0
10-11  
10-12  
10-13  
10  
Reverse voltage VR (V)  
40  
Reverse voltage VR (V)  
Fig.1 Reverse current vs. Reverse voltage  
30  
1.0  
0
10  
20  
30  
50  
Fig.2 Capacitance vs. Reverse voltage  
2.0  
0
0.5  
1.0  
1.5  
f=470MHz  
1.6  
1.2  
0.8  
0.4  
0
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Series resistance vs. Reverse voltage  
10  
30  
1.0  
Reverse voltage VR (V)  
Fig.4 Linearity factor vs. Reverse voltage  
Rev.1.00 Feb 16, 2005 page 3 of 4  
HVC316  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
UFP / UFPV  
MASS[Typ.]  
0.0016g  
SC-79  
PWSF0002ZA-A  
D
b
E
H
E
c
l
l
1
e
1
Dimension in Millimeters  
Reference  
Symbol  
A
Min  
0.50  
0.25  
Nom  
0.60  
0.30  
Max  
0.70  
0.35  
A
b
1
c
0.08  
0.70  
1.10  
1.50  
0.18  
0.90  
1.30  
1.70  
D
E
0.80  
1.20  
b
2
1.60  
0.80  
H
E
2
1
b
e
Pattern of terminal position areas  
1.70  
0.60  
l
1
Rev.1.00 Feb 16, 2005 page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 2.0  

相关型号:

HVC317B

Variable Capacitance Diode for tuner
HITACHI

HVC317B

Variable Capacitance Diode for Tuner
LRC

HVC317B

Variable Capacitance Diode for tuner
RENESAS

HVC317BKRF

Variable Capacitance Diode, 30V, Silicon
HITACHI

HVC317BKRF

30V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC317BKRU

暂无描述
HITACHI

HVC317BKRU

暂无描述
RENESAS

HVC317BKRV

Variable Capacitance Diode, 30V, Silicon
RENESAS

HVC317BTRF

30V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC317BTRU

30V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC317BTRU-E

30V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC317BTRV

Variable Capacitance Diode, 30V, Silicon
RENESAS