HVC365TRV [RENESAS]
15V, SILICON, VARIABLE CAPACITANCE DIODE;型号: | HVC365TRV |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 15V, SILICON, VARIABLE CAPACITANCE DIODE 二极管 变容二极管 光电二极管 |
文件: | 总5页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVC365
Variable Capacitance Diode for VCO
REJ03G0490-0300
(Previous: ADE-208-428B)
Rev.3.00
Jan 17, 2005
Features
•
High capacitance ratio and good C-V linearity.
Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
•
Ordering Information
Type No.
HVC365
Laser Mark
Package Code
V6
UFP
Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1
2
V6
Rev.3.00 Jan 17, 2005 page 1 of 4
HVC365
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
Item
Symbol
Value
15
Reverse voltage
VR
Junction temperature
Storage temperature
Tj
Tstg
125
−55 to +125
°C
°C
Electrical Characteristics
(Ta = 25°C)
Test Condition
Item
Reverse current
Symbol
IR1
Min
—
—
27.05
6.05
3.0
—
200
Typ
—
—
—
—
—
—
—
Max
10
100
28.55
7.55
—
Unit
nA
VR =10 V
IR2
C1
C4
n
rS
VR = 10 V, Ta = 60°C
Capacitance
pF
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
VR = 4 V, f = 100 MHz
C = 200 pF , R = 0 Ω, Both forward
and reverse direction 1 pulse.
Capacitance ratio
Series resistance
ESD-Capability *1
—
Ω
V
1.5
—
Note: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V
Rev.3.00 Jan 17, 2005 page 2 of 4
HVC365
Main Characteristic
10–9
10–10
10–11
10–12
10–13
0
4
8
12
Reverse voltage VR (V)
Fig.1 Reverse Current vs. Reverse Voltage
16
20
30
f=1MHz
25
20
15
10
5
0
1.0
10
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse Voltage
30
Rev.3.00 Jan 17, 2005 page 3 of 4
HVC365
Package Dimensions
As of January, 2003
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
Package Code
JEDEC
UFP
—
JEITA
Mass (reference value)
Conforms
0.0016 g
Rev.3.00 Jan 17, 2005 page 4 of 4
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