HVL145 [RENESAS]
Silicon Epitaxial Planar Pin Diode for Antenna Switching; 硅外延平面PIN二极管的天线切换
| 型号： | HVL145 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon Epitaxial Planar Pin Diode for Antenna Switching |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVL145
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0434-0100
(Previous: ADE-208-1597)
Rev.1.00
Dec 07, 2004
Features
•
•
•
•
An optimal solution for antenna switching in mobile phones.
Low capacitance. (C = 0.45 pF max)
Low forward resistance. (rf = 1.8 Ω max)
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVL145
4
EFP
Pin Arrangement
Cathode mark
Mark
1
2
1. Cathode
2. Anode
Rev.1.00, Dec 07, 2004, page 1 of 5
HVL145
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
60
Unit
Reverse voltage
VR
IF
V
Forward current
50
mA
mW
°C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
100
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
—
Typ
Max
100
0.9
Unit
nA
V
Test Condition
Reverse current
Forward voltage
Capacitance
IR
VF
C
—
—
—
—
—
VR = 60 V
IF = 2 mA
—
—
0.45
1.8
pF
Ω
VR = 1 V, f = 1 MHz
Forward resistance
ESD-Capability *1
rf
—
IF = 10 mA, f = 100 MHz
—
100
—
V
C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V
2. Please do not use the soldering iron due to avoid high stress to the EFP package.
3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as
unquestioned. Please kindly consider soldering nature.
Rev.1.00, Dec 07, 2004, page 2 of 5
HVL145
Main Characteristic
10-2
10-7
10-8
10-9
10-4
10-6
10-8
Ta = 75°C
Ta = 50°C
10-10
Ta = 75°C
Ta = 25°C
10-11
10-12
Ta = –25°C
Ta = 25°C
10-10
10-12
10-13
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
103
f = 1MHz
f = 100MHz
10
102
101
100
10-1
1.0
0.1
10-4
10-3
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
10-2
10-1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Dec 07, 2004, page 3 of 5
HVL145
107
106
105
104
103
102
101
100
f=100MHz
0
0.2
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) vs. Forward voltage
0.4
0.6
0.8
Rev.1.00, Dec 07, 2004, page 4 of 5
HVL145
Package Dimensions
As of January, 2003
Unit: mm
0.8 ± 0.05
1.0 ± 0.05
Package Code
JEDEC
EFP
—
JEITA
—
Mass (reference value)
0.0007 g
Rev.1.00, Dec 07, 2004, page 5 of 5
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