HZ6C2L
更新时间：2024-09-18 12:58:38
品牌：RENESAS
描述：6.15V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, SC-40, 2 PIN
概述
规格参数
数据手册HZ6C2L 概述
6.15V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, SC-40, 2 PIN 齐纳二极管
HZ6C2L 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Obsolete | 零件包装代码： | DO-35 |
| 包装说明： | SC-40, 2 PIN | 针数： | 2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.41 |
| Is Samacsys： | N | 其他特性： | LOW LEAKAGE, LOW ZENER IMPEDANCE |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| 最大动态阻抗： | 60 Ω | JEDEC-95代码： | DO-35 |
| JESD-30 代码： | O-LALF-W2 | JESD-609代码： | e2 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 175 °C |
| 封装主体材料： | GLASS | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 0.4 W |
| 认证状态： | Not Qualified | 标称参考电压： | 6.15 V |
| 子类别： | Voltage Reference Diodes | 表面贴装： | NO |
| 技术： | ZENER | 端子面层： | TIN COPPER |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 最大电压容差： | 2.44% |
| 工作测试电流： | 0.5 mA | Base Number Matches： | 1 |
HZ6C2L 数据手册
通过下载HZ6C2L数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载HZ Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0180-0300Z
(Previous: ADE-208-117B)
Rev.3.00
Mar.11.2004
Features
•
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
power supply, etc.
•
Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
Ordering Information
Type No.
Mark
Package Code
HZ Series
Type No.
DO-35
Pin Arrangement
7
B 2
2
1
Type No.
Cathode band
1. Cathode
2. Anode
Rev.3.00, Mar.11.2004, page 1 of 6
HZ Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pd
Value
500
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
Tj
175
Tstg
−55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*1
Reverse Current
Dynamic Resistance
Test
Test
Condition
Test
IR (µA)
Max
25
Condition
VR (V)
0.5
rd (Ω)
Max
100
Condition
Type
Grade
Min
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
Max
IZ (mA)
IZ (mA)
HZ2
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5
5
5
5
5
0.5
0.5
100
100
5
5
HZ3
HZ4
HZ5
5
5
5
1.0
100
5
5
5
1.5
100
5
Note: 1. Tested with DC.
Rev.3.00, Mar.11.2004, page 2 of 6
HZ Series
(Ta = 25°C)
Dynamic Resistance
Zener Voltage
VZ (V)*1
Reverse Current
Test
Test
Condition
Test
IR (µA)
Max
5
Condition
VR (V)
1.5
rd (Ω)
Max
100
Condition
Type
Grade
Min
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
Max
IZ (mA)
IZ (mA)
HZ5
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
5
5
HZ6
HZ7
HZ9
HZ11
5
5
5
5
5
1
1
1
2.0
3.5
5.0
7.5
40
15
20
25
5
5
5
5
Note: 1. Tested with DC.
Rev.3.00, Mar.11.2004, page 3 of 6
HZ Series
(Ta = 25°C)
Dynamic Resistance
Zener Voltage
VZ (V)*1
Reverse Current
Test
Test
Condition
Test
IR (µA)
Max
1
Condition
VR (V)
9.5
rd (Ω)
Max
35
Condition
Type
Grade
Min
Max
IZ (mA)
IZ (mA)
HZ12
A1
A2
A3
B1
B2
B3
C1
C2
C3
1
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
34.2
35.3
36.4
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
14.7
15.1
15.5
15.9
16.5
17.1
17.7
18.3
19.0
19.7
20.4
21.1
21.9
22.6
23.3
24.0
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
35.7
36.8
38.0
5
5
HZ15
HZ16
HZ18
HZ20
HZ22
HZ24
HZ27
HZ30
HZ33
HZ36
5
5
5
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
40
5
5
5
2
2
2
2
2
2
2
2
3
1
45
2
3
1
55
2
3
1
60
2
3
1
65
2
3
1
70
2
3
1
80
2
3
1
100
120
140
2
3
1
2
3
1
2
3
Note: 1. Tested with DC.
2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.
Rev.3.00, Mar.11.2004, page 4 of 6
HZ Series
Main Characteristic
10–2
10–3
10–4
10–5
10–6
10–7
10–8
0
5
10
15
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
20
25
30
35
40
0.10
50
500
400
5mm
%/°C
0.08
0.06
0.04
0.02
0
40
2.5 mm
3 mm
30
Printed circuit board
×
×
100 180 1.6t mm
20
Material: paper phenol
mV/°C
10
300
200
100
0
0
−0.02
−0.04
−0.06
−0.08
−0.10
−10
−20
−30
−40
−50
0
5
10 15 20 25 30 35 40
0
50
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
100
150
200
Zener Voltage VZ (V)
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.3.00, Mar.11.2004, page 5 of 6
HZ Series
Package Dimensions
As of January, 2003
Unit: mm
26.0 Min
26.0 Min
4.2 Max
Package Code
DO-35
JEDEC
JEITA
Mass (reference value)
Conforms
Conforms
0.13 g
Rev.3.00, Mar.11.2004, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
HZ6C2L 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| HZ6C2L-E | RENESAS | 6.15V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, SC-40, 2 PIN | 获取价格 |
|
| HZ6C2LRE-E | RENESAS | 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 | 获取价格 |
|
| HZ6C2LRF | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LRH | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LTA | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LTAX | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LTD | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LTDX | HITACHI | 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 | 获取价格 |
|
| HZ6C2LTE | HITACHI | Zener Diode, 0.4W, Silicon, Unidirectional, DO-35 | 获取价格 |
|
| HZ6C2LTE | RENESAS | 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 | 获取价格 |
|
HZ6C2L 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
