HZD6.8Z4 [RENESAS]
Silicon Planar Zener Diode for Surge Absorb; 硅平面齐纳二极管的浪涌吸收
| 型号： | HZD6.8Z4 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon Planar Zener Diode for Surge Absorb |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HZD6.8Z4
Silicon Planar Zener Diode for Surge Absorb
REJ03G0201-0200
Rev.2.00
Oct 20, 2004
Features
•
•
Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.
Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
SFP
HZD6.8Z4
N2
Pin Arrangement
Cathode mark
Mark
1
2
N2
1. Cathode
2. Anode
Rev.2.00, Oct 20, 2004, page 1 of 4
HZD6.8Z4
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Symbol
Value
150
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Pd *
mW
°C
Tj
150
Tstg
−55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Test Condition
IZ = 5 mA, 40 ms pulse
VR = 3.5 V
Item
Symbol
VZ
Min
6.47
—
Typ
—
Max
7.00
2
Unit
Zener voltage
V
Reverse current
Capacitance
IR
C
—
µA
pF
Ω
—
—
4
VR = 1 V, f = 1 MHz
IZ = 5 mA
Dynamic resistance
ESD-Capability *1*2
rd
—
—
30
—
—
8
—
kV
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V.
2. Between cathode and anode.
3. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.2.00, Oct 20, 2004, page 2 of 4
HZD6.8Z4
Main Characteristic
10–2
250
200
150
100
50
Polyimide board
20h×15w×0.8t
1.5
10–3
10–4
10–5
10–6
1.5
unit: mm
0
0
2
4
6
8
10
0
50
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (°C)
Fig.1 Zener current vs. Zener voltage
Fig.2 Power Dissipation vs. Ambient Temperature
104
PRSM
t
Ta = 25°C
nonrepetitive
103
102
10
1.0
10–2
10–1
1.0
10
102
103
Time t (s)
Fig.3 Surge Reverse Power Ratings
Rev.2.00, Oct 20, 2004, page 3 of 4
HZD6.8Z4
Package Dimensions
As of January, 2003
Unit: mm
1.0 ± 0.10
1.4 ± 0.10
Package Code
JEDEC
SFP
—
JEITA
—
Mass (reference value)
0.0010 g
Rev.2.00, Oct 20, 2004, page 4 of 4
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