HZM4.3FATR [RENESAS]
UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE;型号: | HZM4.3FATR |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 二极管 齐纳二极管 |
文件: | 总8页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to tents of the document, and
these changes do not constitute any alteration to the contents nt itself.
Renesas Technology Home Pa.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any r infringement of any
third-party's rights, originating in the use of any product data, diaograms, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including prorograms and
algorithms represents information on products at the timerials, and are
subject to change by Renesas Technology Corporatiuct improvements or
other reasons. It is therefore recommended that echnology Corporation
or an authorized Renesas Technology Corporae latest product information
before purchasing a product listed herein.
The information described here may contypographical errors.
Renesas Technology Corporation assy damage, liability, or other loss
rising from these inaccuracies or e
Please also pay attention to infos Technology Corporation by various
means, including the Renesamiconductor home page
(http://www.renesas.com)
4. When using any or all in these materials, including product data, diagrams,
charts, programs, ato evaluate all information as a total system before
making a final df the information and products. Renesas Technology
Corporation aany damage, liability or other loss resulting from the
information con
5. Renesas Technologmiconductors are not designed or manufactured for use in a device
or system that is used mstances in which human life is potentially at stake. Please contact
Renesas Technology Cortion or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HZM4.3FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-468B (Z)
Rev.2
Nov. 2002
Features
•
•
HZM4.3FA has four devices, and can absorb surge.
MPAK-5 Package is suitable for high density surface mounting speed assembly.
Ordering Information
Type No.
Laser Mark
age Code
HZM4.3FA
43A
PAK-5
Pin Arrangement
5
2
3
1. Cathode
2. Cathode
3. Cathode
4. Anode
4
5. Cathode
(Top View)
HZM4.3FA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pd *
Tj
Value
200
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
Note: Four device total, See Fig.2.
150
Tstg
–55 to +150
°C
Electrical Characteristics*1
(Ta = 25°C)
Item
Symbol Min
Typ
Max
4.48
10
Unit Ttion
Zener voltage
Reverse current
Capacitance
VZ
IR
4.01
—
—
—
—
—
—
V
s pulse
µ
C
—
150
1
1 MHz
Dynamic resistance
ESD-Capability *2
rd
—
—
30
50 pF, R = 330 Ω, Both forward and
erse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; IR > 10 µA
Rev.2, Nov. 2002, page 2 of 2
HZM4.3FA
Main Characteristic
10
1.0
10-1
10-2
10-3
10-4
10-5
10-6
10-7
0
1
2
3
4
Zener Vo
Fig.1 Zeneage
250
100
50
1.0mm
Cu Foil
Printed circuit board
×
×
25 62 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
0
0
50
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
100
150
200
Rev.2, Nov. 2002, page 3 of 3
HZM4.3FA
104
PRSM
Ta = 25°C
t
nonrepetitive
103
102
10
1.0
10-5
10-4
10-3
0-1
1.0
Time t
Fig.3 Surge Reve
104
103
102
10
20hx15wx0.8t
0.4
1.5
1.75
1.0
unit: mm
1.0
10-2
10-1
1.0
10
102
103
Time t (s)
Fig.4 Transient Thermal Impedance
Rev.2, Nov. 2002, page 4 of 4
HZM4.3FA
Package Dimensions
As of July, 2001
Unit: mm
1.9 0.2
(0.95)
(0.95)
+ 0.1
– 0.05
0.16
0 – 0.10
+ 0.1
– 0.05
5 – 0.4
2.9 0.2
MPAK-5
—
—
s (reference value)
0.013 g
Rev.2, Nov. 2002, page 5 of 5
HZM4.3FA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibilitr failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed rangder normally foreseeable
failure rates or failure modes in semiconductor devices and emeasures such as fail-
safes, so that the equipment incorporating Hitachi product y injury, fire or other
consequential damage due to operation of the Hitachi p
5. This product is not designed to be radiation resistan
6. No one is permitted to reproduce or duplicate, ir part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any quecument or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyodayo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
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(America) Inc.
Hitachi Europe Ltd.
Hitachi Asia Ltd.
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Group III (Electronic Components)
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(Taipei Branch Office)
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Taipei (105), Taiwan
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Fax: <49> (89) 9 29 30 00
URL : http://semiconductor.hitachi.com.tw
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.2, Nov. 2002, page 6 of 6
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