HZS12C1

更新时间:2024-09-18 02:42:32
品牌:RENESAS
描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

HZS12C1 概述

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 硅外延平面齐纳二极管,稳压电源 齐纳二极管

HZS12C1 规格参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DO-34
包装说明:MHD, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.43
Is Samacsys:N其他特性:LOW LEAKAGE, LOW ZENER IMPEDANCE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:35 ΩJEDEC-95代码:DO-34
JESD-30 代码:O-LALF-W2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.4 W认证状态:Not Qualified
标称参考电压:13.45 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:1.86%
工作测试电流:5 mABase Number Matches:1

HZS12C1 数据手册

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HZS Series  
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply  
REJ03G0184-0300Z  
(Previous: ADE-208-120B)  
Rev.3.00  
Mar.11.2004  
Features  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized  
power supply, etc.  
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS Series  
Type No.  
MHD  
Pin Arrangement  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.3.00, Mar.11.2004, page 1 of 6  
HZS Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
400  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
200  
Tstg  
55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Dynamic Resistance  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
25  
Condition  
VR (V)  
0.5  
rd ()  
Max  
100  
Condition  
Type  
Grade  
Min  
1.6  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
Max  
IZ (mA)  
IZ (mA)  
HZS2  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
4.9  
5.0  
5
5
5
5
5
0.5  
0.5  
100  
100  
5
5
HZS3  
HZS4  
HZS5  
5
5
5
1.0  
100  
5
5
5
1.5  
100  
5
Note: 1. Tested with DC.  
Rev.3.00, Mar.11.2004, page 2 of 6  
HZS Series  
(Ta = 25°C)  
Dynamic Resistance  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
5
Condition  
VR (V)  
1.5  
rd ()  
Max  
100  
Condition  
Type  
Grade  
Min  
4.9  
Max  
IZ (mA)  
IZ (mA)  
HZS5  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
5.1  
5
5
5.0  
5.2  
5.1  
5.3  
HZS6  
HZS7  
HZS9  
HZS11  
5.2  
5.5  
5
5
5
5
5
1
1
1
2.0  
3.5  
5.0  
7.5  
40  
15  
20  
25  
5
5
5
5
5.3  
5.6  
5.4  
5.7  
5.5  
5.8  
5.6  
5.9  
5.7  
6.0  
5.8  
6.1  
6.0  
6.3  
6.1  
6.4  
6.3  
6.6  
6.4  
6.7  
6.6  
6.9  
6.7  
7.0  
6.9  
7.2  
7.0  
7.3  
7.2  
7.6  
7.3  
7.7  
7.5  
7.9  
7.7  
8.1  
7.9  
8.3  
8.1  
8.5  
8.3  
8.7  
8.5  
8.9  
8.7  
9.1  
8.9  
9.3  
9.1  
9.5  
9.3  
9.7  
9.5  
9.9  
9.7  
10.1  
10.3  
10.6  
10.8  
11.1  
11.3  
11.6  
11.9  
12.1  
12.4  
12.7  
12.9  
13.1  
13.4  
9.9  
10.2  
10.4  
10.7  
10.9  
11.1  
11.4  
11.6  
11.9  
12.2  
12.4  
12.6  
12.9  
HZS12  
5
1
9.5  
35  
5
Note: 1. Tested with DC.  
Rev.3.00, Mar.11.2004, page 3 of 6  
HZS Series  
(Ta = 25°C)  
Dynamic Resistance  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
1
Condition  
VR (V)  
9.5  
rd ()  
Max  
35  
Condition  
Type  
Grade  
Min  
Max  
IZ (mA)  
IZ (mA)  
HZS12  
C1  
C2  
C3  
1
13.2  
13.5  
13.8  
14.1  
14.5  
14.9  
15.3  
15.7  
16.3  
16.9  
17.5  
18.1  
18.8  
19.5  
20.2  
20.9  
21.6  
22.3  
22.9  
23.6  
24.3  
25.2  
26.2  
27.2  
28.2  
29.2  
30.2  
31.2  
32.2  
33.2  
34.2  
35.3  
36.4  
13.7  
14.0  
14.3  
14.7  
15.1  
15.5  
15.9  
16.5  
17.1  
17.7  
18.3  
19.0  
19.7  
20.4  
21.1  
21.9  
22.6  
23.3  
24.0  
24.7  
25.5  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
33.6  
34.6  
35.7  
36.8  
38.0  
5
5
HZS15  
HZS16  
HZS18  
HZS20  
HZS22  
HZS24  
HZS27  
HZS30  
HZS33  
HZS36  
5
5
5
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
11.0  
12.0  
13.0  
15.0  
17.0  
19.0  
21.0  
23.0  
25.0  
27.0  
40  
5
5
5
2
2
2
2
2
2
2
2
3
1
45  
2
3
1
55  
2
3
1
60  
2
3
1
65  
2
3
1
70  
2
3
1
80  
2
3
1
100  
120  
140  
2
3
1
2
3
1
2
3
Notes: 1. Tested with DC.  
2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.  
Rev.3.00, Mar.11.2004, page 4 of 6  
HZS Series  
Main Characteristic  
10–2  
10–3  
10–4  
10–5  
10–6  
10–7  
10–8  
0
5
10  
15  
20  
25  
30  
35  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
0.10  
50  
500  
400  
300  
200  
100  
0
l
%/°C  
0.08  
0.06  
0.04  
0.02  
0
40  
2.5 mm  
3 mm  
30  
Printed circuit board  
100 180 1.6t mm  
Material: paper phenol  
×
×
20  
mV/°C  
10  
l = 5 mm  
0
0.02  
0.04  
0.06  
0.08  
0.10  
10  
20  
30  
40  
50  
l = 10 mm  
(Publication value)  
0
5
10 15 20 25 30 35 40  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.3.00, Mar.11.2004, page 5 of 6  
HZS Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
26.0 Min  
26.0 Min  
2.4 Max  
Package Code  
JEDEC  
JEITA  
MHD  
Conforms  
Mass (reference value)  
0.084 g  
Rev.3.00, Mar.11.2004, page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
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