HZS4.7NB1TD-E [RENESAS]

HZS4.7NB1TD-E;
HZS4.7NB1TD-E
型号: HZS4.7NB1TD-E
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

HZS4.7NB1TD-E

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April 1010  
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Issued by: Renesas Electronics Corporation ()  
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HZS-N Series  
Silicon Planar Zener Diode for Stabilized Power Supply  
REJ03G0185-0300  
Rev.3.00  
Nov 12, 2007  
Features  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized  
power supply, etc.  
Wide voltage range from 1.88 V through 38.52 V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Part No.  
Cathode Band  
Package N
Package Code  
HZS-N Series  
Black  
M
GRZZ0002ZC-A  
Pin Arrangement  
2
1
nd  
1. Cathode  
2. Anode  
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 1 of 6  
HZS-N Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
400  
Unit  
Power dissipation  
Pd  
mW  
°C  
Junction temperature  
Storage temperature  
Tj  
200  
Tstg  
–55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Condition  
Test  
IR (μA)  
Max  
Condition  
VR (V)  
0.5  
rd (Ω)  
Max  
Condition  
IZ (mA)  
5
Type  
Grade  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
Min  
1.88  
2.02  
2.12  
2.22  
2.33  
2.43  
2.54  
2.69  
2.85  
3.01  
3.16  
3.32  
3.47  
3.62  
3.77  
3.92  
4
4.8
4.97  
5.12  
5.29  
5.46  
5.64  
5.81  
5.99  
6.16  
6.32  
6.52  
6.70  
Max  
2.10  
2.20  
2.30  
2.41  
2.52  
2.63  
2.75  
2.91  
3.07  
3.22  
3.38  
3.53  
3
7  
4.91  
5.03  
5.18  
5.35  
5.52  
5.70  
5.88  
6.06  
6.24  
6.40  
6.59  
6.79  
6.97  
IZ (mA)  
HZS2.0N  
5
120  
100  
HZS2.2N  
HZS2.4N  
HZS2.7N  
HZS3.0N  
HZS3.3N  
HZS3.6N  
HZS3.9N  
HZS4.3N  
5
5
5
5
120  
12
5
1.0  
1.0  
1.0  
1.0  
100  
100  
110  
120  
120  
120  
120  
120  
5
5
5
5
5
5
5
5
5
HZS4.7N  
HZS5.1N  
HZS5.6N  
HZS6.2N  
HZS6.8N  
5
5
5
5
5
5
5
5
5
2
1.0  
1.5  
2.5  
3.0  
3.5  
100  
70  
40  
30  
25  
5
5
5
5
5
Note: 1. Tested with pulse (PW = 40 ms)  
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 2 of 6  
HZS-N Series  
(Ta = 25°C)  
Dynamic Resistance  
Test  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
IR (μA)  
Max  
0.5  
Condition  
rd (Ω)  
Max  
25  
Condition  
IZ (mA)  
5
Type  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
Min  
Max  
7.19  
IZ (mA)  
VR (V)  
HZS7.5N  
6.88  
5
4.0  
7.11  
7.41  
7.33  
7.64  
HZS8.2N  
HZS9.1N  
HZS10N  
HZS11N  
HZS12N  
HZS13N  
HZS15N  
HZS16N  
HZS18N  
HZS20N  
HZS22N  
7.56  
7.90  
5
5
5
5
5
5
5
5
0.5  
0.5  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
5.0  
6.0  
7.0  
8.0  
20  
20  
20  
20  
25  
25  
25  
25  
30  
30  
30  
5
5
5
5
5
5
5
5
5
5
5
7.82  
8.15  
8.07  
8.41  
8.33  
8.70  
8.61  
8.99  
8.89  
9.29  
9.19  
9.59  
9.48  
9.90  
9.82  
10.30  
10.63  
10.95  
11.26  
11.63  
11.92  
12.30  
12.71  
13.16  
13.62  
14.09  
14.5
1
8  
0.45  
21.08  
21.65  
22.09  
22.61  
23.12  
23.73  
24.27  
24.81  
25.52  
26.26  
26.95  
27.64  
10.18  
10.50  
10.82  
11.13  
11.50  
11.80  
12.18  
12.59  
13.03  
13.48  
13.95  
14.42  
14.87  
15.33  
15.79  
16
20.
20.76  
21.22  
21.68  
22.26  
22.75  
23.29  
23.81  
24.26  
24.97  
25.63  
26.29  
11  
12  
13  
15  
17  
HZS24N  
HZS27N  
5
5
0.2  
0.2  
19  
21  
35  
45  
5
5
Note: 1. Tested with pulse (PW = 40 ms)  
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 3 of 6  
HZS-N Series  
(Ta = 25°C)  
Dynamic Resistance  
Test  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
IR (μA)  
Condition  
VR (V)  
rd (Ω)  
Condition  
IZ (mA)  
5
Type  
Grade  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
Min  
Max  
IZ (mA)  
Max  
Max  
HZS30N  
26.99  
27.70  
28.36  
29.02  
29.68  
30.32  
30.90  
31.49  
32.14  
32.79  
33.40  
34.01  
34.68  
35.36  
36.00  
36.63  
28.39  
29.13  
29.82  
30.51  
31.22  
31.88  
32.50  
33.11  
33.79  
34.49  
35.13  
35.77  
36.47  
37.19  
37.85  
38.52  
5
0.2  
23  
25  
27  
55  
65  
75  
85  
HZS33N  
HZS36N  
HZS39N  
5
5
5
0.2  
0.2  
0.2  
5
5
5
Notes: 1. Tested with pulse (PW = 40 ms).  
2. Part No. is as follows: HZS2.0NB1, HZS2.0NB2, •••
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 4 of 6  
HZS-N Series  
Main Characteristic  
10  
8
6
4
2
0
0
4
8
12  
16  
Zener Voltag
Fig.1 Zener cu
20  
40  
0.10  
500  
400  
300  
200  
100  
0
l
%/°C  
0.08  
2.5 mm  
3 mm  
0.06  
0.04  
Printed circuit board  
100 180 1.6t mm  
Material: paper phenol  
×
×
0.02  
0  
l
= 5 mm  
0
0
0.02  
0.04  
0.06  
0.08  
0.10  
10  
20  
30  
40  
50  
l
=
10 mm  
(Publication value)  
0
5
10 15 20 25 30 35 40  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 5 of 6  
HZS-N Series  
Package Dimensions  
Package Name  
MHD  
JEITA Package Code  
RENESAS Code  
GRZZ0002ZC-A  
Previous Code  
MHD / MHDV  
MASS[Typ.]  
0.084g  
L
E
L
Dimension in Millimeters  
Reference  
Symbol  
Min  
-
-
-
Nom  
0.4  
2.0  
-
Max  
-
-
2.4  
-
φb  
φD  
E
L
26.0  
-
REJ03G0185-0300 Rev.3.00 Nov 12, 2007  
Page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Notes:  
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rights or any other rights of Renesas or any third party with respect to the information in this document.  
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.  
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass  
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws  
and regulations, and procedures required by such laws and regulations.  
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this  
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,  
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be  
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )  
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a  
result of errors or omissions in the information included in this document.  
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undersea communication transmission. If you are considering the use of our products for such purposes, pleRenesas sales office beforehand. Renesas shall  
have no liability for damages arising out of the uses set forth above.  
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed
(1) artificial life support devices or systems  
(2) surgical implantations  
(3) healthcare intervention (e.g., excision, administration of medication, etc.)  
(4) any other purposes that pose a direct threat to human life  
Renesas shall have no liability for damages arising out of the uses set forth in the above and cts in any of the foregoing  
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated coployees against any and all  
damages arising out of such applications.  
9. You should use the products described herein within the range specified by Renesas, g, operating supply voltage range,  
movement power voltage range, heat radiation characteristics, installation and other no liability for malfunctions or damages  
arising out of the use of Renesas products beyond such specified ranges.  
10. Although Renesas endeavors to improve the quality and reliability of its productuch as the occurrence of failure at a certain  
rate and malfunctions under certain use conditions. Please be sure to implemssibility of physical injury, and injury or damage  
caused by fire in the event of the failure of a Renesas product, such as safeg but not limited to redundancy, fire control and  
malfunction prevention, appropriate treatment for aging degradation or an, since the evaluation of microcomputer software  
alone is very difficult, please evaluate the safety of the final products or
11. In case Renesas products listed in this document are detached from are attached or affixed, the risk of accident such as  
swallowing by infants and small children is very high. You should iproducts may not be easily detached from your products.  
Renesas shall have no liability for damages arising out of such d
12. This document may not be reproduced or duplicated, in any foapproval from Renesas.  
13. Please contact a Renesas sales office if you have any queshis document, Renesas semiconductor products, or if you have  
any other inquiries.  
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http://www.renesas.com  
Refer to "http://www.renesas.coiled information.  
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© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .7.2  

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