HZU16B3TRF [RENESAS]

16.72V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE;
HZU16B3TRF
型号: HZU16B3TRF
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

16.72V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

稳压二极管 齐纳二极管 测试 光电二极管
文件: 总11页 (文件大小:101K)
中文:  中文翻译
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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
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2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
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information contained herein.  
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or system that is used under circumstances in which human life is potentially at stake. Please contact  
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contained therein.  
HZU Series  
Silicon Epitaxial Planar Zener Diodes for Stabilizer  
ADE-208-024G (Z)  
Rev.7  
Dec. 2002  
Features  
Ultra small Resin Package (URP) is suitable for surface mount design.  
These diodes are delivered taped.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZU Series  
Let to Mark Code  
URP  
Pin Arrangement  
Cathode mark  
Mark  
1
2
20  
1. Cathode  
2. Anode  
HZU Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd *1  
Tj  
Value  
200  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Note: 1. With P.C. Board.  
150  
Tstg  
-55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition  
VZ (V) *1  
IR (µA)  
Max  
120  
Condition  
rd ()  
Max  
100  
Condition  
Type  
Grade  
B
Min  
Max  
2.20  
2.40  
2.60  
2.90  
2.75  
2.90  
3.20  
3.05  
3.20  
3.50  
3.35  
3.50  
3.80  
3.65  
3.80  
4.10  
3.97  
4.10  
IZ (mA)  
VR (V)  
0.5  
IZ (mA)  
HZU2.0  
HZU2.2  
HZU2.4  
HZU2.7  
1.90  
2.10  
2.30  
2.50  
2.50  
2.65  
2.80  
2.80  
2.95  
3.10  
3.10  
3.25  
3.40  
3.40  
3.55  
3.70  
3.70  
3.87  
5
5
5
5
5
5
5
5
B
120  
0.7  
100  
B
120  
1.0  
100  
B
120  
1.0  
110  
B1  
B2  
B
HZU3.0  
HZU3.3  
HZU3.6  
HZU3.9  
5
5
5
5
50  
20  
10  
10  
1.0  
1.0  
1.0  
1.0  
120  
130  
130  
130  
5
5
5
5
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
Note: 1. Tested with pulse (PW = 40 ms).  
Rev.7, Dec. 2002, page 2 of 9  
HZU Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition  
VZ (V) *1  
IR (µA)  
Max  
10  
Condition  
rd ()  
Max  
130  
Condition  
IZ (mA)  
5
Type  
Grade  
B
Min  
Max  
4.48  
4.21  
4.34  
4.48  
4.90  
4.61  
4.75  
4.90  
5.37  
5.04  
5.20  
5.37  
5.92  
5.55  
5.73  
5.92  
6.53  
6.12  
6.33  
6.53  
7.14  
6.73  
6.93  
7.14  
7.84  
7.36  
7.60  
7.84  
8.64  
8.10  
8.36  
8.64  
IZ (mA)  
VR (V)  
HZU4.3  
4.01  
4.01  
4.15  
4.28  
4.42  
4.42  
4.55  
4.69  
4.84  
4.84  
4.98  
5.14  
5.31  
5.31  
5.49  
5.67  
5.86  
5.86  
6.06  
6.26  
6.47  
6.47  
6.65  
6.86  
7.06  
7.06  
7.28  
7.52  
7.76  
7.76  
8.02  
8.28  
5
1.0  
B1  
B2  
B3  
B
HZU4.7  
HZU5.1  
HZU5.6  
HZU6.2  
HZU6.8  
HZU7.5  
HZU8.2  
5
5
5
5
5
5
5
10  
5
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
130  
130  
80  
5
5
5
5
5
5
5
B1  
B2  
B3  
B
B1  
B2  
B3  
B
5
B1  
B2  
B3  
B
2
50  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms).  
Rev.7, Dec. 2002, page 3 of 9  
HZU Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition  
VZ (V) *1  
IR (µA)  
Max  
2
Condition  
rd ()  
Max  
30  
Condition  
IZ (mA)  
5
Type  
Grade  
B
Min  
Max  
IZ (mA)  
VR (V)  
HZU9.1  
8.56  
9.55  
5
6.0  
B1  
B2  
B3  
B
8.56  
8.93  
8.85  
9.23  
9.15  
9.55  
HZU10  
HZU11  
HZU12  
HZU13  
HZU15  
HZU16  
HZU18  
9.45  
10.55  
9.87  
5
5
5
5
5
5
5
2
2
2
2
2
2
2
7.0  
30  
30  
35  
35  
40  
40  
45  
5
5
5
5
5
5
5
B1  
B2  
B3  
B
9.45  
9.77  
10.21  
10.55  
11.56  
10.88  
11.22  
11.56  
12.60  
11.90  
12.24  
12.60  
13.96  
13.03  
13.49  
13.96  
15.52  
14.46  
14.98  
15.52  
17.09  
16.01  
16.51  
17.09  
19.03  
17.70  
18.35  
19.03  
10.11  
10.44  
10.44  
10.76  
11.10  
11.42  
11.42  
11.74  
12.08  
12.47  
12.47  
12.91  
13.37  
13.84  
13.84  
14.34  
14.85  
15.37  
15.37  
15.58  
16.35  
16.94  
16.94  
17.56  
18.21  
8.0  
B1  
B2  
B3  
B
9.0  
B1  
B2  
B3  
B
10.0  
11.0  
12.0  
13.0  
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms).  
Rev.7, Dec. 2002, page 4 of 9  
HZU Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition  
VZ (V) *1  
IR (µA)  
Max  
2
Condition  
rd ()  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
B
Min  
Max  
IZ (mA)  
VR (V)  
HZU20  
18.86  
18.86  
19.52  
20.21  
20.88  
20.88  
21.54  
22.23  
22.93  
22.93  
23.72  
24.54  
25.10  
28.00  
31.00  
34.00  
21.08  
19.70  
20.39  
21.08  
23.17  
21.77  
22.47  
23.17  
25.57  
23.96  
24.78  
25.57  
28.90  
32.00  
35.00  
38.00  
5
15.0  
B1  
B2  
B3  
B
HZU22  
HZU24  
5
5
2
2
17.0  
19.0  
55  
60  
5
5
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZU27  
HZU30  
HZU33  
HZU36  
2
2
2
2
2
2
2
2
21.0  
23.0  
25.0  
27.0  
70  
80  
80  
90  
2
2
2
2
B
B
B
Note: 1. Tested with pulse (PW = 40 ms).  
Rev.7, Dec. 2002, page 5 of 9  
HZU Series  
Mark Code  
Type  
Grade  
B
MarK No. Type  
HZU6.2  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
Mark No. Type  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B
Mark No.  
1 3 •  
1 3 •  
1 3 •  
1 5 •  
1 5 •  
1 5 •  
1 6 •  
1 6 •  
1 6 •  
1 8 •  
1 8 •  
1 8 •  
2 0 •  
2 0 •  
2 0 •  
2 2 •  
2 2 •  
2 2 •  
2 4 •  
2 4 •  
2 4 •  
2 7 •  
3 0 •  
3 3 •  
3 6 •  
HZU2.0  
HZU2.2  
HZU2.4  
HZU2.7  
2 0  
2 2  
2 4  
2 7  
2 7  
3 0  
3 0  
3 3  
3 3  
3 6  
3 6  
3 9  
3 9  
4 3  
4 3  
4 3  
4 7  
4 7  
4 7  
5 1  
5 1  
5 1  
5 6  
5 6  
5 6  
6 2  
6 2  
6 2  
6 8  
6 8  
6 8  
7 5  
7 5  
7 5  
8 2  
8 2  
8 2  
9 1  
9 1  
9 1  
1 0 •  
1 0 •  
1 0 •  
1 1 •  
1 1 •  
1 1 •  
1 2 •  
1 2 •  
1 2 •  
HZU13  
HZU15  
HZU16  
HZU18  
HZU20  
HZU22  
HZU24  
B
B
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
HZU6.8  
HZU7.5  
HZU8.2  
HZU9.1  
HZU10  
HZU11  
HZU12  
HZU3.0  
HZU3.3  
HZU3.6  
HZU3.9  
HZU4.3  
HZU4.7  
HZU5.1  
HZU5.6  
HZU27  
HZU30  
HZU33  
HZU36  
B
B
B
Notes: 1. Example of Marking  
(1) One grade type (B)  
(2) Two grade type (B1,B2)  
(3) Three grade type (B1,B2,B3)  
Upper Center  
Lower  
20  
30•  
3 0  
30  
4 3  
43  
4 3  
HZU2.0B  
HZU30B  
HZU3.0B1  
HZU3.0B2  
HZU4.3B1  
HZU4.3B2  
HZU4.3B3  
2. The grade B type includes from B1 min. to B3 (or B2) max.  
3. B grade is standard and has better delivery, These are marked one of B1, B2, B3.  
4. Type No. is as follows; HZU2.0B, HZU2.2B, ••• HZU36B. (B grade)  
5. Type No. is as follows; HZU2.7B1, HZU2.7B2, ••• HZU24B3. (B 1, B2,B3 grade)  
Rev.7, Dec. 2002, page 6 of 9  
HZU Series  
Main Characteristic  
10  
8
6
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
250  
0.10  
1.5mm  
0.8mm  
0.09  
%/°C  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
0.01  
0.02  
0.03  
0.04  
0.05  
0.06  
40  
35  
30  
25  
20  
15  
10  
5
0
5  
Cu Foil  
200  
Pri×nted circuit board  
×
15 20 1.6t mm  
mV/°C  
Material:  
150  
Glass Epoxy Resin+Cu Foil  
100  
50  
0
10  
15  
20  
25  
0
5
10 15 20 25 30 35 40 45  
Zener Voltage VZ (V)  
0
50  
100  
150  
200  
Ambient Temperature Ta (°C)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Fig.3 Power Dissipation vs. Ambient Temperature  
Rev.7, Dec. 2002, page 7 of 9  
HZU Series  
Package Dimensions  
As of July, 2002  
Unit: mm  
1.7 0.1ꢀ  
2.ꢀ 0.1ꢀ  
Hitachi Code  
JEDEC  
JEITA  
URP  
Conforms  
Mass (reference value)  
0.004 g  
Rev.7, Dec. 2002, page 8 of 9  
HZU Series  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-6538-6533/6538-8577  
Fax : <65>-6538-6933/6538-3877  
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Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
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Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-2735-9218  
Fax : <852>-2730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 778322  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Str 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
URL : http://semiconductor.hitachi.com.tw  
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.  
Colophon 7.0  
Rev.7, Dec. 2002, page 9 of 9  

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17.32V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
RENESAS

HZU18B2

Silicon Epitaxial Planar Zener Diodes for Stabilizer
RENESAS

HZU18B2

Zener Diode, 17.96V V(Z), 2.2%, 0.2W, Silicon, Unidirectional, URP, 2 PIN
HITACHI

HZU18B2TLF

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RENESAS