IS9-705RH-T [RENESAS]

1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDFP8, DFP-8;
IS9-705RH-T
型号: IS9-705RH-T
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDFP8, DFP-8

光电二极管
文件: 总2页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Radiation Hardened Power-Up/Down  
Microprocessor Reset Circuit  
IS-705RH  
Features  
• Electrically Screened to SMD #5962-00538  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Hardness  
- Total Dose . . . . . . . . . . . . . 100 krad(Si) (Min)  
- Single Event Latch-up . . . . . . >90MeV/mg/cm  
The Radiation Hardened IS-705RH  
is a monolithic device that  
monitors the power supply voltage  
used by satellite control units and  
provides a reset output pulse  
TM  
2
during power-up and power-down. The reset threshold  
is 4.65V (Typ) and the reset pulse width is set at 200ms  
(Typ). A watchdog circuit is incorporated for easy  
interfacing with microprocessors and controllers. If the  
watchdog input has not been toggled within a preset  
1.6s (Typ) time period, an output signal is generated,  
which can be used as an interrupt. The power function  
input (PFI) may be used to monitor other voltage levels.  
The circuit has a 1.25V (Typ) threshold and provides a  
PFO output when low voltage is detected. An active-low  
manual reset input is also provided for direct control of  
the reset function.  
• Precision 4.65V Voltage Monitor  
• Supply Voltage Range . . . . . . . . . 4.75V to 5.5V  
• RESET Valid at V  
CC  
= 1.2V  
• Low Supply Current . . . . . . . . . . . . .420µA (Typ)  
• 200ms (Typ) RESET Pulse Width  
Applications  
• Flight Computers  
• Controllers  
• Critical Microprocessor Power Monitoring  
• Reliable Replacement of Discrete Solutions  
Constructed with the Intersil UHF2X-CMOS process,  
these devices have been specifically designed to provide  
highly reliable performance in harsh radiation  
environments. This process has been tested for single  
event latch-up and has demonstrated an immunity to  
90MeV/mg/cm .  
Pin Configuration  
2
IS-705RH  
(8 LD FLATPACK)  
TOP VIEW  
Specifications for Rad Hard QML devices are  
controlled by the Defense Supply Center in  
Columbus (DSCC). The SMD numbers listed here  
must be used when ordering.  
MR  
1
2
3
4
8
7
6
5
WDO  
RESET  
WDI  
V
CC  
Detailed Electrical Specifications for these  
devices are contained in SMD 5962-00538. A  
“hot-link” is provided on our homepage for  
downloading.  
GND  
PFI  
PFO  
http://www.dscc.dla.mil/downloads/milspec/s  
md/00538.pdf  
Ordering Information  
ORDERING  
NUMBER  
INTERNAL  
MKT. NUMBER  
PART  
MARKING  
TEMP. RANGE  
PACKAGE  
(Pb-Free)  
(°C)  
5962R0053801V9A  
IS0-705RH/SAMPLE  
IS0-705RH-Q  
-55 to +125  
-55 to +125  
-55 to +125  
DIE  
IS0-705RH/SAMPLE  
IS9-705RH-8  
DIE SAMPLE  
5962R0053801QXC  
(Note)  
Q 5962R00 53801QXC  
Q 5962R00 53801VXC  
IS9- 705RH /PROTO  
8 Ld Flatpack, Solder SL  
5962R0053801VXC  
(Note)  
IS9-705RH-Q  
-55 to +125  
-55 to +125  
8 Ld Flatpack, Solder SL  
8 Ld Flatpack, Solder SL  
IS9-705RH/PROTO  
(Note)  
IS9-705RH/PROTO  
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant  
and compatible with both SnPb and Pb-free soldering operations.  
March 23, 2010  
FN4703.6  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2007, 2010. All Rights Reserved  
1
Star*Power™ is a trademark of Intersil Americas Inc.  
IS-705RH  
Die Characteristics  
DIE DIMENSIONS:  
Process:  
1500μmx1830µm (59milsx72mils)  
UHF2X-CMOS, Junction Isolation  
Thickness: 483µm ±25.4μm (19mils ±1mil)  
Backside Finish:  
INTERFACE MATERIALS  
Glassivation  
Silicon  
ASSEMBLY RELATED INFORMATION  
Substrate Potential:  
Type: Nitride (Si N ) over Silox (SiO )  
3 4  
2
Nitride Thickness: 4.0kÅ ±1.0kÅ  
Silox Thickness: 12.0kÅ ±4.0kÅ  
Unbiased  
(May be left floating or connected to GND.)  
Top Metallization  
ADDITIONAL INFORMATION  
Worst Case Current Density:  
Top Metal 3: TiAlCu  
Thickness: 0.8µm ±0.02µm  
Metal 1 and 2: TiAlCu  
5
2
<2.0 x 10 A/cm  
Thickness: 0.4µm ±0.01µm  
Metallization Mask Layout  
IS-705RH  
MR (1)  
WDO (8)  
VCC (2)  
RESET (7)  
WDI (6)  
GND (3)  
PFI (4)  
PFO (5)  
NOTE: Octagonal trim pads should be left unconnected.  
For additional products, see www.intersil.com/product_tree  
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted  
in the quality certifications found at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications  
at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by  
Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any  
infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any  
patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN4703.6  
March 23, 2010  
2

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