M6MGT64BS8AWG-P [RENESAS]
M6MGT64BS8AWG-P;
| 型号： | M6MGT64BS8AWG-P |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | M6MGT64BS8AWG-P |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Renesas LSIs
M6MGB/T64BS8AWG-P
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM
&
Stacked-CSP (Chip Scale Package)
Description
The RENESAS M6MGB/T64BS8AWG-P is suitable for a
high performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small power
dissipation.
The RENESAS M6MGB/T64BS8AWG-P is a Stacked Chip
Scale Package (S-CSP) that contents 64M-bit Flash memory
and 8M-bit SRAM in a 67-pin Stacked CSP with leaded
solder ball.
64M-bit Flash memory is a 4,194,304 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
Features
Access Time
Flash
SRAM
70ns (Max.)
85ns (Max.)
F-VCC =S-VCC=2.7 ~ 3.0V
Ta= -40 ~ 85 degree
67pin S-CSP,
Supply Voltage
Ambient Temperature
Package
Ball pitch 0.80mm
Outer-ball:Sn - Pb
8M-bit SRAM is a 524,288 words asynchronous SRAM
fabricated by CMOS technology for the peripheral circuit and
TFT type transistor for the memory cell.
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
8
4
5
6
7
1
2
3
NC
NC
A
NC
NC
NC
B
C
D
S-
F-
S-
F-
A20
A11
A16
A8
A18
LB#
WP#
GND
WE#
F-
RY/BY#
S-
UB#
F-
RP#
A5
A4
NC
A19
A17
A7
S-
OE#
A10
A15
A14
A21
E
F
G
H
J
A0
A6
A9
DQ11
F-
CE#
DQ13 DQ15
A3
A2
DQ9
DQ8
DQ0
DQ12
A13
A12
S-
CE2
S-
WE#
F-
GND
DQ10
DQ2
DQ6
F-
OE#
F-
GND
S-
VCC
DQ4
DQ5
DQ14
DQ7
A1
S-
CE1#
F-
VCC
NC
NC
DQ1
DQ3
NC
NC
K
L
NC
NC
M
(Top View)
8.5 mm
F-VCC
S-VCC
: VCC for Flash Memory
: VCC for SRAM
: GND for Flash Memory
: GND for SRAM
: Common address for Flash/SRAM
: Address for Flash
: Data I/O
: Flash chip enable
: SRAM chip enable1
: SRAM chip enable2
F-OE#
:Output enable for Flash
:Output enable for SRAM
:Write enable for Flash
:Write enable for SRAM
:Write protect for Flash
:Reset power down for Flash
:Flash Ready/Busy
:Lower byte control for SRAM
:Upper byte control for SRAM
:Non Connection
S-OE#
F-WE#
S-WE#
F-WP#
F-RP#
F-RY/BY#
S-LB#
S-UB#
NC
F-GND
S-GND
A0-A18
A19-A21
DQ0-DQ15
F-CE#
S-CE1#
S-CE2
1
Rev.1.0.48a_bebz
Renesas LSIs
M6MGB/T64BS8AWG-P
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM
&
Stacked-CSP (Chip Scale Package)
MCP Block Diagram
F-Vcc
F-GND
F-RY/BY#
A0 to A21
A0 to A21
64Mbit DINOR IV
Flash Memory
F-CE#
F-WP#
F-RP#
F-WE#
F-OE#
S-Vcc
S-GND
DQ0 to DQ15
A0 to A18
S-WE#
S-OE#
S-UB#
S-LB#
S-CE1#
S-CE2
8Mbit
SRAM
Note: In the Flash memory part there are “Vcc”, “GND”, “OE#” and “WE#” which mean “F-Vcc”, “F-GND”, “F-OE#” and
“F-WE#”, respectively. In the SRAM part there are “GND”, “UB#”, “LB#”, “OE#” and “WE#” which mean “S-GND”, “S-
UB#”, “S-LB#”, “S-OE#” and “S-WE#”, respectively.
Capacitance
Limits
Typ.
Symbol
Parameter
Conditions
Unit
Min.
Max.
18
A21-A0, F-OE#, F-WE#, F-CE#, F-WP#, F-
RP#, S-CE1#, S-CE2, S-OE#, S-WE#, S-
LB#, S-UB#
Input
capacitance
CIN
pF
pF
Ta=25°C, f=1MHz,
Vin=Vout=0V
Output
Capacitance
COUT
DQ15-DQ0, F-RY/BY#
22
2
Rev.1.0.48a_bebz
Renesas LSIs
M6MGB/T64BS8AWG-P
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM
&
Stacked-CSP (Chip Scale Package)
Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan
Keep safety first in your circuit designs!
·
Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable
material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
·
·
·
These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual
property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by
Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology
Corporation product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com).
When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision
on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology
Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,
medical, aerospace, nuclear, or undersea repeater use.
·
·
·
·
The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
·
·
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
REJ03C0162
© 2003 Renesas Technology Corp.
New publication, effective April 2003.
Specifications subject to change without notice
相关型号：
©2020 ICPDF网 联系我们和版权申明