NDL5506P [RENESAS]
FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT, DIP, HERMETIC SEALED, DIP-14;
| 型号： | NDL5506P |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT, DIP, HERMETIC SEALED, DIP-14 局域网 光纤 |
| 文件： | 总10页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
PHOTO DIODE
NDL5506P Series
φ 50 µm InGaAs AVALANCHE PHOTO DIODE
14-PIN DIP MODULE WITH TEC
DESCRIPTION
The NDL5506P Series is an InGaAs avalanche photodiode module with internal thermoelectric coolerThis eries
is available in multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 60nm with high
efficiency.
FEATURES
•
High quantum efficiency
η = 85 % @ λ = 1 300 nm
η = 80 % @ λ = 1 550 nm
ID = 2 nA
•
•
•
•
Small dark current
High-speed response
Internal thermoelectric cooler
fC = 1.2 GHz @ M = 20
Hermetically sealed 14-pin Dual In-line Package
PACKAGE DINSIONS
in mimers
BOTTOM VIEW
2 – 3.2±0.2
5.
φ
20.84
15.0
8.0
1.0
#8
#14
–
+
APD
#7
#1
Optical Fiber
Length: 1 m
PIN CONNECTIONS
Pin No.
Function
Pin No.
Function
1
2
3
4
5
6
7
NC
NC
NC
8
9
Cooler Cathode
Thermistor
Case Ground
APD Anode
NC
10
11
12
13
14
APD Cathode
Case Ground
Thermistor
0.45
NC
NC
Cooler Anode
The information in this document is subject to change without notice.
Document No. P10312EJ3V0DS00 (3rd edition)
Date Published August 1997 NS
Printed in Japan
The mark • shows major revised points.
1993
©
NDL5506P Series
ORDERING INFORMATION
Part Number
NDL5506P
Available Connector
Fiber
Without Connector
GI-50/125
SM-9/125
NDL5506PC
NDL5506PS
NDL5506PSC
With FC-PC Connector
Without Connector
With FC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Forward Current
Symbol
IF
Ratings
10
Unit
mA
mA
°C
Reverse Current
IR
0.5
Operating Case Temperature
Storage Temperature
TC
–20 to +55
–40 to +85
260
Tstg
Tsld
°C
Lead Soldering Temperature (10 s)
°C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C, IC = 0 A, uss otherwise specified)
Parameter
Symbol
Condition
MIN.
50
TYP.
70
MAX.
100
Unit
V
Reverse Breakdown Voltage
V(BR)R
ID = 100 µA
δ*1
Temperature Coefficient of
Reverse Breakdown Voltage
0.2
%/°C
Dark Current
ID
VR = V(R × 0.
5
2
50
5
nA
VR R)R × 0.9, IC = 1.1 A, TC = 55 °C
M 2 to 10
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
IDM
fC
1
2
nA
pF
V= V(BR)R × 0.9, f = 1 MHz
M = 10
1.5
1.7
1
70
GHz
M = 20
1.2
85
Quantum Efficiency
Sensitivity
η
λ = 1 300 nm
%
λ = 1 550 nm
80
S
M
λ = 1 300 nm
0.73
20
0.89
1.00
40
A/W
λ = 1 550 nm
Multiplication actor
Excee Factor*2
λ = 1 550 nm, Ipo = 1.0 µA,
VR = V (@ ID = 1 µA)
λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µA,
M = 10, f = 35 MHz, B = 1 MHz
x
0.7
5
F
V(BR)R (25 °C + ∆T °C) – V(BR)R (25 °C)
∆T °C · V(BR)R (25 °C)
*1 δ =
*2 F = MX
2
NDL5506P Series
ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: TC = –20 to + 55 °C)
Parameter
Thermistor Resistance
B Constant
Symbol
Conditions
MIN.
9.5
TYP.
10.0
3 400
2.6
MAX.
10.5
Unit
kΩ
K
R
B
TAPD = 25 °C
3 300
3 500
Cooler Voltage
VC
∆T*1
IC = 1.1 A
IC = 1.1 A
V
Cooling Capacity
45
K
*1 ∆T = TC – TAPD
3
NDL5506P Series
InGaAs APD/PD FAMILY
Features
APD
PIN-PD
Remarks
φ 30 µm
φ 50 µm
φ 50 µm
φ 80 µm
φ 50 µm
φ 80 µm
φ 120 µm
Packages
(for 2.5 Gb/s) (for 2.5 Gb/s)
(for 2.5 Gb/s)
TO-18 type CAN NDL5530
–
NDL5520C
–
NDL5500
NDL5500C
–
NDL5510
NDL5510C
–
–
–
–
–
–
–
–
3 pins
Chip on Carrier
NDL5530C
–
–
Receptacle
Module
NDL5471RC 3 pins
NDL5471RD RC: FC recepe
RD: SC receptacle
Coaxial Module
with MMF
–
NDL5521P
NDL5551P
NDL5561P*2
NDL5561P1*2 NDL5421P1 NDL5461P1
NDL5561P2*2 NDL5421P2 NDL5461P2
NDL5421P
NDL5461P
–
P1, P2: ith flae
NDL590P es: With
re-AM
NDL5521P1 NDL5551P1
NDL5521P2 NDL5551P2
NDL5553P*1
NDL5553P1*1
NDL5553P2*1
NDL5590P
NDL5590P1
NDL5590P2
Coaxial Module
with SMF
NDL5531P
NDL5531P1
NDL5531P2
NDL5592P
NDL5592P1
NDL5592P2
–
NDL5553PS*1
NDL5553P1S*1
NDL5553P2S*1
–
–
481P*3
L5481P1*3
ND481P2*3
–
P1, P2: With flange
NDL5592P Series: With
Pre-AMP
14-pin DIP
–
–
–
–
NDL5522P
–
NDL5506P
NDL5516
–
NDL5422P
–
–
–
–
–
–
∆T = 45 K (@ Ic = 1.1 A)
Module with TEC
NDL5506PS
NDL55PC
PS: With SMF
6-pin BFY Module
with MMF
–
–
With Pre-AMP
8-pin Mini-DIL
with SMF
–
NDL8800P
*1 For OTDR
*2 With GI-62.5/125
*3 For analog application l CATV)
Remark Modules re aailable FC-PC connector or optional SC-PC connector.
4
NDL5506P Series
REFERENCE
Document Name
Document No.
C11159E
C11531E
C10535E
MEI-1202
X10679E
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
5
NDL5506P Series
[MEMO]
6
NDL5506P Series
[MEMO]
7
NDL5506P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-exrt thprouct from
a country other than Japan may also be prohibited without a license from that country. Pleasl an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any mehout the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for anerrors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of s, copyrights or other intellectual
property rights of third parties by or arising from use of a device descrid herein or any other liability arising
from use of such device. No license, either express, implieor otherwe, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporator others.
While NEC Corporation has been making continuous effort to ehe reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To mie risks of damage or injury to persons or
property arising from a defect in an NEC semiconductovice, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-cotaien, and anti-failure features.
NEC devices are classified into the following three quity grades:
"Standard", "Special", and "Specific". The Specifiquaity grade applies only to devices developed based on
a customer designated "quality assurance pogm" for a specific application. The recommended applications
of a device depend on its quality grae, as ndicaed below. Customers must check the quality grade of each
device before using it in a particular apcati.
Standard: Computers, office eqmencommunications equipment, test and measurement equipment,
audio and visual uipmn, home electronic appliances, machine tools, personal electronic
equipment and dustal robots
Special: Transportation eqipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, ame systems, safety equipment and medical equipment (not specifically designed
for life su
Specific: Aircafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
suport sstems or medical equipment for life support, etc.
The quality grade of EC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If cusomeited to use NEC devices for applications other than those specified for Standard quality grade,
they shld conact an NEC sales representative in advance.
dioative design is not implemented in this product.
M4 96. 5
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