NDL5590P2D [RENESAS]
FIBER OPTIC PHOTODIODE DETECTOR, PANEL MOUNT, THROUGH HOLE MOUNT, SC/PC CONNECTOR;
| 型号： | NDL5590P2D |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | FIBER OPTIC PHOTODIODE DETECTOR, PANEL MOUNT, THROUGH HOLE MOUNT, SC/PC CONNECTOR 通信 局域网 放大器 PC 光纤 |
| 文件： | 总14页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
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Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
RECEIVER
NDL5590P Series
φ50 µm InGaAs AVALANCHE PHOTO DIODE WITH
MULTIMODE FIBER INTERNAL PRE-AMPLIFIER
DESCRIPTION
NDL5590P Series is an InGaAs avalanche photo diode module with multimode fiber incorporatg sicon pre-
amplifier IC. It is designed as an optical receiver for fiber optic communications systems such aSDH, SONET,
digital video transmission.
FEATURES
•
•
•
•
•
•
•
Internal Si pre-amplifier IC
High sensitivity
P = −36 dBm TYP. @ 622 Mb/s. NRZ
r
Wide dynamic range
Transimpedance
D = 28 dB TYP. @ 622 Mb/s. N
300 Ω
50 Ω
Output impedance
Detecting area size
φ50 µm
GI-50/125 multimode fiber pigtail
PACKAGDIMENSIONS
imillimeters
NDL5590P
NDL590P1
Opticaer:
GI-50125
NDL5590P2
Optical Fiber:
GI-50/125
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Leng1 m MIN.
Length: 1 m MIN.
Shrunk tube
Shrunk tube
Shrunk t
φ2.5
φ2.5
14.0±0.1
+0.0
φ
6.0
–0.1
+0.0
+
φ
6.0
–0.1
φ
6.0–0
φ
2– 2.2
φ
0.45
2–φ2.5
4
2
4
2
4
2
3
1
3
1
3
1
φ
2.0
φ
2.0
φ
2.0
18.0±0.1
12.0±0.1
16.0±0.2
PIN CONNECTIONS
4
2
Pin No.
1
2
Function
VPD (APD Cathode)
Case GND
Pin No.
Function
Signal Out
CC (5 V)
3
1
3
4
V
The information in this document is subject to change without notice.
Document No. P10267EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The mark • shows major revised points.
1995
©
NDL5590P Series
ORDERING INFORMATION
•
Part Number
NDL5590P
Available Connector
Description
No Flange
Without Connector
NDL5590PC
NDL5590PD
NDL5590P1
NDL5590P1C
NDL5590P1D
NDL5590P2
NDL5590P2C
NDL5590P2D
With FC-PC Connector
With SC-PC Connector
Without Connector
Flat Mount Flange
Vertical Flange
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Reverse Current
Symbol
IR
Ratings
0.5
Unit
m
V
Supply Voltage
VCC
TC
6.0
Operating Case Temperature
Storage Temperature
−40 to +85
−40 to +85
260
°C
°C
Tstg
Lead SolderingTemperature (10 s)
Tsld
2
NDL5590P Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Symbol
V(BR)R
Conditions
MIN.
50
TYP.
70
MAX.
100
Unit
V
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
ID = 100 µA
*1
δ
°
%/ C
0.2
ID
P
VR = V(BR) R × 0.9
5.0
−36
28
30
nA
dBm
dB
•
Receiver Sensitivity
Dynamic range
622 Mb/s, NRZ, PN 215 − 1
BER = 10−11, Mark: 1/2, λ = 1 310 nm
λ = 1 310 nm, M = 1
λ = 1 550 nm, M = 1
λ = 1 310 nm, M = 1
λ = 1 550 nm, M = 1
M = 3 to 15
Dr
η
Quantum Efficiency
76
65
90
%
77
Responsivity
S
0.80
0.81
0.94
A/W
Cut-off Frequency
fC
In
GHz
pA/√Hz
V
Equivalent Input Noise Current
Power Supply Voltage
Power Supply Current
Transimpedance
f = 100 MHz
9.0
5.0
23
VCC
ICC
Zt
VCC = 5 V
30
mA
300
Ω
•
(BR)R
V
°
∆
°
−
(BR)R
V
(25 C + T C)
(25 C)
°
*1
δ
=
∆T °C y V(BR)R (25 °C)
EQUIVALENT CIRCUIT AND PIN CONNECTIOS
V
PD (+)
V
CC (+)
#1
#4
BOTTOM VIEW
ICC = 23 mA YP. @ 5 V
Pin No.
Function
4
1
2
3
4
VPD (APD Cathode)
Case GND
3
1
APD
Signal Out
#3
V
CC (5 V)
Pre-AMP
Signal Out
2
P.C.D. = φ 2 mm
Case (GND)
#2
3
NDL5590P Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
•
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
60
40
20
0
10
0
∆
λ = 1 300 nm
η
–10
–60 –40 –20
0
20
40 60
(˚C)
80 100
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Case TempeT
C
Wavelength m)
(
µ
λ
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
DARK RENT vs.
REVEVOLTAGE
10–6
10–7
10–3
10–4
λ = 1 300 nm
I
po = 1.0 µA
T = 85 ˚C
C
0–9
TC = 65 ˚C
Iph
10–5
10–6
T = 25 ˚C
C
T = –20 ˚C
C
10–10
0
20
40
60
80
(V)
100
Reverse Voltage V
R
10–7
10–8
10–9
I
D
20
40
60
80
100
Reverse Voltage V
R
(V)
4
NDL5590P Series
ERROR RATE CHARACTERISTICS
FREQUENCY RESPONSE
10−4
622.08 Mb/S, NRZ,
V
CC = 5 V
CC = 20.0 mA
= 1 300 nm
V
CC = 5 V, PRBS 215 − 1,
I
λ
λ
= 1 300 nm
Ip = 100 µA
10−5
10−6
M = 15
M = 5
M = 10
M = 2
10−7
10−8
10−9
0
1.0
2.0
.0
4.0
5.0
Frequenc(GH
10−10
10−11
10−12
DIAGRAM
−45
−40
−35
−30
622 Mb/s, NRZ
CC = 5 V, M = 10
V
Average Received Power P (dBm)
ReSign(Optical)
Output Signal (Electrical)
Time base (500 ps/div.)
5
NDL5590P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
(*1)
ferrule (*)
(*2)
module body
6
NDL5590P Series
InGaAs APD/PD FAMILY
•
Features
APD
PIN-PD
φ30 µm
φ50 µm
φ50 µm
Remarks
φ50 µm
φ80 µm
φ80 µm
Packages
(for 2.5 Gb/s)
(for 2.5 Gb/s)
(for 2.5 Gb/s)
TO-18 type Can
NDL5530
NDL5500
NDL5510
3 pins
3 pins
TO-18 type Can
with Micro Lens
NDL5490L*3,4
NDL5490*3,4
NDL5405L
Small Can
NDL5531
φ5.6 µm
Chip on Carrier
NDL5530C
NDL5520C
NDL5500C
NDL5510C
Receptacle Module
NDL5471RC
NDL54RD
3 ps
RC: FC receptacle
RD: SC receptacle
Coaxial Module with
MMF
NDL5521P
NDL5521P1
NDL5521P2
NDL5551P
NDL5561P*2
NDL5561P1*2
NDL5561P2*2
NDL5421P
NDL5421P1
NDL5421P
NDL5
461P1
461P2
P1, P2: With flange
NDL5590P Series:
With Pre-AMP
NDL5551P1
NDL5551P2
NDL5553P*1
NDL5553P1*1
NDL5553P2*1
NDL5590P
NDL5590P1
NDL5590P2
Coaxial Module with NDL5531P
NDL5553PS*1
NDL5553P1S*
NDL5553P*1
NDL5481P*5
NDL5481P1*5
NDL5481P2*5
SMF
NDL5531P1
NDL5531P2
14-pin DIP Module
with TEC
NDL55P
∆T = 45 K (@ Ic = 1.1 A)
ND506PS
PS: With SMF
6-pin BFY Module
with MMF
NDL5522P
NDL5422P
With Pre-AMP
*1
*2
*3
*4
*5
For OTDR
With GI-62.5/125
Under developm
Internal preamplifier for 1Gb/s
For analog ppliation (optical CATV)
Remak
Modles are available with FC-PC connector or optional SC-PC connector.
7
NDL5590P Series
REFERENCE
Document Name
Document No.
LEI-1201
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
IEI-1209
C10535E
MEI-1202
X10679E
8
NDL5590P Series
[MEMO]
9
NDL5590P Series
[MEMO]
10
NDL5590P Series
[MEMO]
11
NDL5590P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the hermetic
seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export thprouct fom
a country other than Japan may also be prohibited without a license from that country. Please call NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errs which may appear in this
document.
NEC Corporation does not assume any liability for infringement of paopyrights or other intellectual
property rights of third parties by or arising from use of a device described erein or any other liability arising
from use of such device. No license, either express, implied ootherwiseis granted under any patents,
copyrights or other intellectual property rights of NEC Corporation others.
While NEC Corporation has been making continuous effort to enhareliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimsks of damage or injury to persons or
property arising from a defect in an NEC semiconductor d, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-contame, ad anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific qlity grade applies only to devices developed based on
a customer designated "quality assurance progamfor a specific application. The recommended applications
of a device depend on its quality grade, s indated below. Customers must check the quality grade of each
device before using it in a particular applicaon.
Standard: Computers, office equipnt, communications equipment, test and measurement equipment,
audio and visual equiment, ome electronic appliances, machine tools, personal electronic
equipment and indtrial bots
Special: Transportation equipent (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-ystems, safety equipment and medical equipment (not specifically designed
for life suppo
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support ystems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customrs ind tuse NEC devices for applications other than those specified for Standard quality grade,
they should ontat an NEC sales representative in advance.
Antctivdesign is not implemented in this product.
M4 96. 5
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