NE32500 [RENESAS]

KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, DIE-4;
NE32500
型号: NE32500
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, DIE-4

放大器 晶体管
文件: 总10页 (文件大小:193K)
下载:  下载PDF数据表文档文件

NE32500M

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

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21 CEL

NE32500M

RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4

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0 NEC

NE32500M-A

RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4

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0 NEC

NE32500N

C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP

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20 CEL

NE32500N

RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4

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0 NEC

NE32584

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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193 NEC

NE32584

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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104 NEC

NE32584C

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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121 NEC

NE32584C

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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46 NEC

NE32584C_98

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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15 NEC

NE32584C-S

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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50 NEC

NE32584C-S

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

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0 CEL

NE32584C-SL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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51 NEC

NE32584C-SL

Transistor,

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0 NEC

NE32584C-SL

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET

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0 CEL