NE3521M04-T2B-A [RENESAS]

N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain; N沟道砷化镓HJ -FET ，K波段低噪声和高增益


型号：	NE3521M04-T2B-A
厂家：	RENESAS TECHNOLOGY CORP
描述：	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain N沟道砷化镓HJ -FET ，K波段低噪声和高增益
文件：	总10页 (文件大小：414K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

NE3521M04

N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

R09DS0058EJ0100

Rev.1.00

Mar 19, 2013

FEATURES

•

Low noise figure and high associated gain:

NF = 0.85 dB TYP., Ga = 11 dB TYP. @ V_DS= 2 V, I_D= 10 mA, f = 20 GHz

NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @V_DS= 2 V, I_D= 6mA, f = 20 GHz (Reference Value)

Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

•

DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3521M04-T2

NE3521M04-T2-A

Flat-lead 4-pin 3 kpcs/reel

thin-type super

V86

• Embossed tape 8 mm wide

• Pin 1 (Source), Pin 2 (Drain)

face the perforation side of the

tape

minimold (M04)

NE3521M04-T2B

NE3521M04-T2B-A

15 kpcs/reel

(Pb-Free)

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3521M04

ABSOLUTE MAXIMUM RATINGS (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

V_GS

I_D

Ratings

Unit

4.0

–3.0

I_DSS

μA

°C

Gate Current

I_G

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

P_tot

125

T_ch

+125

T_stg

–65 to +125

°C

Note: Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 1 of 8

NE3521M04

RECOMMENDED OPERATING RANGE (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Drain Current

Symbol

MIN.

TYP.

MAX.

Unit

V_DS

–

I_D

–

dBm

Input Power

P_in

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise specified)

Parameter

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut-off Voltage

Transconductance

Symbol

Test Conditions

V_GS= –3.0 V

V_DS= 2 V, V_GS= 0 V

MIN.

TYP.

0.5

MAX.

Unit

μA

I_GSO

–

I_DSS

–0.2

–

V_{GS (off)}V_DS= 2 V, I_D= 100 μA

–0.7

–

–1.3

–

V_DS= 2 V, I_D= 10 mA

Noise Figure

V_DS= 2 V, I_D= 10 mA, f = 20 GHz

0.85

1.2

–

Associated Gain

STANDARD CHARACTERISTICS FOR REFERENCE

(T_A= +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Reference Value

Unit

Noise Figure

V_DS= 2 V, I_D= 6 mA, f = 20 GHz

0.9

Associated Gain

10.5

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 2 of 8

NE3521M04

TYPICAL CHARACTERISTICS (T_A= +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

250

200

DS = 2 V

150

125

100

200

(°C)

100 125 150

250

-0.80

-0.60

-0.40

-0.20

0.00

Ambient Temperature T

GATE TO SOURCE VOLTAGE VGS (V)

MINIMUM NOISE FIGURE,

ASSOCIATED GAIN vs.DRAIN CURRENT

DRAIN CURRENT

vs. DRAIN TO SOURCE VOLTAGE

2.5

f = 20 GHz

DS = 2 V

2.0

1.5

1.0

0.5

0.0

VGS = 0 V

-0.1 V

-0.2 V

-0.3 V

NFmin

-0.4 V

-0.5 V

0.0

1.0

2.0

3.0

4.0

(mA)

DRAIN CURRENT I

DRAIN TO SOURCE VOLTAGE VDS (V)

MINIMUM NOISE FIGURE,

ASSOCIATED GAIN vs.FREQUENCY

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

DS = 2 V

= 10 mA

NFmin

FREQUENCY f (GHz)

Remark The graphs indicate nominal characteristics.

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 3 of 8

NE3521M04

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 4 of 8

NE3521M04

PACKAGE DIMENSIONS

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)

2.05±0.1

1.25±0.1

(Bottom View)

(1.05)

PIN CONNECTIONS

1. Source

2. Drain

3. Source

4. Gate

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 5 of 8

NE3521M04

MOUNTING PAD DIMENSIONS

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)

-Reference 1-

1.35

0.60

0.75

4 - φ0.50

0.58

Device Direction

0.80

0.75

0.60

1.35

-Reference 2-

Device Direction

1.6

0.6

Remark The mounting pad layout in this document is for reference only.

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 6 of 8

NE3521M04

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Soldering Conditions

Condition Symbol

Infrared Reflow

Peak temperature (package surface temperature) : 260°C or below

IR260

Time at peak temperature

: 10 seconds or less

: 60 seconds or less

: 120 30 seconds

: 3 times

Time at temperature of 220°C or higher

Preheating time at 120 to 180°C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

Partial Heating

Peak temperature (package surface temperature) : 350°C or below

HS350

Soldering time (per side of device)

: 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

CAUTION

Do not use different soldering methods together (except for partial heating).

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 7 of 8

NE3521M04

This product uses gallium arsenide (GaAs).

Caution GaAs Products

GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe

the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws

and/or ordinances, dispose of the product as recommended below.

1. Commission a disposal company able to (with a license to) collect, transport and dispose of

materials that contain arsenic and other such industrial waste materials.

2. Exclude the product from general industrial waste and household garbage, and ensure that the

product is controlled (as industrial waste subject to special control) up until final disposal.

• Do not burn, destroy, cut, crush, or chemically dissolve the product.

• Do not lick the product or in any way allow it to enter the mouth.

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

Page 8 of 8

Revision History

NE3521M04 Data Sheet

Description

Summary

Rev.

1.00

Date

Page

Mar 19, 2013

First edition issued

All trademarks and registered trademarks are the property of their respective owners.

C - 1

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[Colophon 2.2]

NE3521M04-T2B-A [RENESAS]

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