NE5550979A-T1A-AZ [RENESAS]
RF POWER, FET;
| 型号： | NE5550979A-T1A-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RF POWER, FET |
| 文件： | 总10页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NE5550979A
Silicon Power LDMOS FET
FEATURES
R09DS0031EJ0100
Rev.1.00
Nov 25, 2011
•
•
•
•
•
High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
APPLICATIONS
•
•
•
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550979A
NE5550979A-AZ
79A
W6
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
(Pb Free)
NE5550979A-T1
NE5550979A-T1-AZ
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• Qty 1 kpcs/reel
NE5550979A-T1A NE5550979A-T1A-AZ
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550979A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Ratings
Unit
V
30
6.0
VGS
IDS
V
3.0
A
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Ptot
25
W
°C
°C
Tch
150
Tstg
−55 to +150
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 8
NE5550979A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Test Conditions
MIN.
−
1.65
−
TYP.
7.5
MAX.
9.0
2.85
−
Unit
V
VGS
2.20
1.7
V
IDS
A
Input Power
Pin
f = 460 MHz, VDS = 7.5 V
−
25
30
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
IGSS
IDSS
VGS = 6.0 V
−
−
−
−
100
10
nA
VDS = 25 V
μA
Vth
BVDSS
Gm
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
1.15
25
1.65
37
2.25
−
2.9
−
V
V
VDS = 7.5 V, IDS = 700 100 mA
Channel to Case
1.8
−
2.2
5.0
S
Thermal Resistance
RF Characteristics
Rth
°C/W
Output Power
Pout
IDS
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
38.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
39.5
1.70
68
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
dBm
A
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
ηd
IDset = 200 mA (RF OFF)
%
ηadd
66
%
Note 1
GL
22.0
39.6
1.60
75
dB
dBm
A
Output Power
Pout
IDS
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
ηd
IDset = 200 mA (RF OFF)
%
ηadd
73
%
Note 2
GL
25.0
38.6
1.76
55
dB
dBm
A
Output Power
Pout
IDS
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
ηd
IDset = 200 mA (RF OFF)
%
ηadd
52
%
Note 1
GL
16.0
dB
Note 1 : Pin = 10 dBm
Note 2 : Pin = 5 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 2 of 8
NE5550979A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
V
GS
V
DS
R1
C1
L1
C1
IN
OUT
50 Ω
50 Ω
C10
C22
C11
C12
C20
C21
FET
NE5550979A (WS)
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
Value
1 μ F
100 pF
24 pF
Type
GRM31CR72A105KA01B
Maker
Murata
Murata
C10
GRM1882C1H101JA01
ATC100A240JW
C11
American Technical
Ceramics
C12
C20
C21
C22
R1
2.4 pF
27 pF
ATC100A2R4BW
ATC100A270JW
ATC100A1R8BW
ATC100A101JW
American Technical
Ceramics
American Technical
Ceramics
1.8 pF
100 pF
4.7 kΩ
American Technical
Ceramics
American Technical
Ceramics
1/10 W Chip Resistor
SSM
SSM_RG1608PB472
L1
PCB
123 nH
φ 0.5 mm, φ D = 3 mm, 10 Turns
R4775, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Ohesangyou
Panasonic
WAKA
−
−
SMA Connecter
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
C1
C1
L1
C12
C11
C20 C21
R1
C22
C10
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 3 of 8
NE5550979A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
50
45
40
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
P
P
P
P
P
out - 3.6 V
out - 4.5 V
out - 6.0 V
out - 7.5 V
out - 9 V
G
G
G
G
G
p
p
p
p
p
- 3.6 V
- 4.5 V
- 6 V
- 7.5 V
- 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
add - 3.6 V
add - 4.5 V
add - 6.0 V
add - 7.5 V
add - 9 V
η
η
η
η
η
η
0
0
–5
0
5
10
15 20
25
30 35
–5
0
5
10
15 20
25
30 35
Input Power Pin (dBm)
Input Power Pin (dBm)
IM3/IM5
vs. 2 TONES OUTPUT POWER
2f0
, 3f vs. OUTPUT POWER
0
0
–10
–20
–30
–40
–50
–60
–70
0
2f
2f
2f
2f
3f
3f
3f
3f
2f
3f
0
0
0
0
0
0
0
0
0
0
- 3.6 V
- 4.5 V
- 6.0 V
- 7.5 V
- 3.6 V
- 4.5 V
- 6.0 V
- 7.5 V
- 9 V
IM
IM
IM
IM
IM
IM
IM
IM
IM
IM
3
3
3
3
5
5
5
5
3
5
- 3.6 V
- 4.5 V
- 6 V
- 7.5 V
- 3.6 V
- 4.5 V
- 6.0 V
- 7.5 V
- 9 V
–10
–20
–30
–40
–50
–60
–70
- 9 V
- 9 V
10
15
20
25
30
35
40
45
10
15
20
25
30
35
40
Output Power Pout (dBm)
2 Tones Output Power Pout (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 4 of 8
NE5550979A
TYPICAL CHARACTERISTICS 2 (TA = 25°C)
R: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 27 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
45
40
35
30
25
20
15
10
5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
P
P
P
P
P
out - 3.6 V
out - 4.5 V
out - 6.0 V
out - 7.5 V
out - 9 V
G
G
G
G
G
p
p
p
p
- 3.6 V
- 4.5 V
- 6 V
- 7.5 V
- 9 V
η p - 3.6 V
ηadd - 4.5 V
ηadd - 6 V
ηadd - 7.5 V
ηadd - 9 V
η
I
I
DS - 3.6 V
- 4.5 V
IDDSS - 6 V
I
I
DS - 7.5 V
DS - 9 V
0
0
–5
0
5
10
15
20
25
30
–5
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
50
45
40
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
G
G
G
G
G
p
p
p
p
p
- 3.6 V
- 4.5 V
- 6 V
- 7.5 V
- 9 V
P
P
P
P
P
out - 3.6 V
out - 4.5 V
out - 6.0 V
out - 7.5 V
out - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
η
add - 3.6 V
ηadd
- 4.5 V
η
η
η
add - 6.0 V
add - 7.5 V
add - 9 V
η
0
0
–5
0
5
10
15 20
25
30 35
–5
0
5
10
15 20
25
30 35
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 8
NE5550979A
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 6 of 8
NE5550979A
PACKAGE DIMENSIONS
79A (UNIT: mm)
(Bottom View)
4.2 MAX.
Source
1.5 0.2
Source
Gate
Drain
Gate
Drain
0.4 0.15
5.7 MAX.
0.8 MAX.
3.6 0.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Drain
Gate
φ
Through Hole: 0.2 × 33
0.5 0.5
6.1
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 7 of 8
NE5550979A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
WS260
HS350
Preheating temperature (package surface temperature)
: 120°C or below
: 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Maximum number of flow processes
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0031EJ0100 Rev.1.00
Nov 25, 2011
Page 8 of 8
Revision History
NE5550979A Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Nov 25, 2011
First edition issued
−
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1
相关型号：
NE55511K+/-.1%
Fixed Resistor, Metal Film, 0.25W, 511000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,
VISHAY
NE5551T
IC VREG DUAL OUTPUT, FIXED MIXED REGULATOR, MBCY8, TO-99, 8 PIN, Fixed Mixed Multiple Output Standard Regulator
NXP
NE5552N
IC VREG DUAL OUTPUT, FIXED MIXED REGULATOR, PDIP14, PLASTIC, DIP-14, Fixed Mixed Multiple Output Standard Regulator
NXP
NE5552R3+/-.25%
Fixed Resistor, Metal Film, 0.25W, 52.3ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
VISHAY
©2020 ICPDF网 联系我们和版权申明