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元器件品牌
NESG2101M05-T1
[RENESAS]
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW; NPN硅锗RF晶体管中等输出功率放大125毫瓦
元器件型号：
NESG2101M05-T1
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
NPN硅锗RF晶体管中等输出功率放大125毫瓦
晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
PDF文件：
总15页 (文件大小：172K)
下载文档：
下载PDF数据表文档文件
型号参数：NESG2101M05-T1参数
查看货源
NESG2101M05-T1-A
NPN SiGe HIGH FREQUENCY TRANSISTOR
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CEL
NESG2101M05-T1-A
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
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RENESAS
NESG2101M05-T1-A
RF SMALL SIGNAL TRANSISTOR
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156
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0
RENESAS
NESG2101M05-T1-A-FB
RF SMALL SIGNAL TRANSISTOR
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0
RENESAS
NESG2101M05-T1-A-YFB
RF SMALL SIGNAL TRANSISTOR
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0
RENESAS
NESG2101M05-T1-A-YFB
RF SMALL SIGNAL TRANSISTOR
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0
RENESAS
NESG2101M05-T1FB
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN
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0
NEC
NESG2101M05-T1FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN
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0
NEC
NESG2101M16
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Warning
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7
NEC
NESG2101M16
NPN SiGe HIGH FREQUENCY TRANSISTOR
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14
CEL
NESG2101M16
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
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27
NEC
NESG2101M16_1
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
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6
NEC
NESG2101M16-A
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
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156
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18
NEC
NESG2101M16-A
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
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0
RENESAS
NESG2101M16-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
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0
NEC
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