NESG2101M16-T3-A-FB [RENESAS]

RF SMALL SIGNAL TRANSISTOR;
NESG2101M16-T3-A-FB
型号: NESG2101M16-T3-A-FB
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

RF SMALL SIGNAL TRANSISTOR

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中文:  中文翻译
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April 1010  
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DATA SHEET  
NPN SILICON GERMANIUM RF TRANSISTOR  
NESG2101M16  
NPN SiGe RF TRANSISTOR FOR  
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)  
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)  
FEATURES  
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-  
gain amplification  
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz  
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz  
Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 Hz  
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolgs) = 5.0 V  
6-pin lead-less minimold (M16, 1208 PKG)  
ORDERING INFORMATION  
<R>  
Part Number  
Order Number  
Package  
Supplying Form  
NESG2101M16  
NESG2101M16-A  
6-pin lead-le
8 mm wide embossed taping  
• Pin 1 (Collector), Pin 6 (Emitter) face the  
perforation side of the tape  
(M16, 12
(Pb-F
eel  
NESG2101M16-T3 NESG2101M16-T3-A  
Remark To order evaluation samprby sales office.  
Unit sample quantity i
ABSOLUTE MAXIMUM
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
O  
VEBO  
IC  
Ratings  
13.0  
Unit  
V
5.0  
V
1.5  
V
100  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
190  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PU10395EJ03V0DS (3rd edition)  
Date Published September 2009 NS  
Printed in Japan  
2003, 2009  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
NESG2101M16  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 5 V, IE = 0 mA  
100  
100  
260  
nA  
nA  
VEB = 1 V, IC = 0 mA  
VCE = 2 V, IC = 15 mA  
Note 1  
hFE  
130  
190  
RF Characteristics  
Gain Bandwidth Product  
Insertion Power Gain  
Noise Figure (1)  
fT  
VCE = 3 V, IC = 50 mA, f = 2 GHz  
14  
11.5  
17  
13.5  
0.9  
GHz  
dB  
S21e2 VCE = 3 V, IC = 50 mA, f = 2 GHz  
VCE = 2 V, IC = 10 mA, f = 2 GHz,  
NF  
1.2  
dB  
ZS = ZSopt, ZL = ZLopt  
VCE = 2 V, IC = 7 mA, f = 1 GHz,  
NF  
Noise Figure (2)  
0.6  
dB  
dB  
dB  
ZS = ZSopt, ZL = ZLopt  
VCE = 2 V, IC = 10 mA, f = 2 GHz,  
Ga  
Associated Gain (1)  
Associated Gain (2)  
13.0  
9.0  
ZS = ZSopt, ZL = ZLopt  
VCE = 2 V, IC = 7 mA, f = 1
Ga  
ZS = ZSopt, ZL = ZLopt  
Note 2  
Reverse Transfer Capacitance  
Maximum Stable Power Gain  
Cre  
VCB = 2 V, IE = 0 mA
0.4  
17.0  
21  
0.5  
pF  
dB  
MSGNote 3 VCE = 3 V, IC =
Gain 1 dB Compression Output Power  
PO (1 dB) VCE = 3.6
f = 2 G
dBm  
Linear Gain  
GL  
V,  
15  
dBm  
Notes 1. Pulse measurement: PW
2. Collector to base capunded  
S21  
S12  
3. MSG =  
hFE CLASSIFICATION  
Rank  
FB/YFB  
zH  
<R>  
Marking  
hFE Value  
130 to 260  
2
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
<R>  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
300  
250  
1.0  
Mounted on Glass Epoxy PCB  
f = 1 MHz  
(1.08 cm2 × 1.0 mm (t) )  
0.8  
0.6  
0.4  
0.2  
200  
190  
150  
100  
50  
0
25  
50  
75  
100  
125  
(°C)  
150  
1.0  
0
4
6
8
10  
1.0  
1.0  
Ambient Temperature T  
A
to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
CURRENT vs.  
TER VOLTAGE  
100  
10  
1
V
CE = 1 V  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Base to
Base to Emitter Voltage VBE (V)  
COLLECTOR .  
BASE TO EMITTTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
V
CE = 3 V  
VCE = 4 V  
0.1  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
500  
450  
400  
μ
A
μ
A
μ
A
350  
μ
A
300 A  
μ
250  
μ
A
200  
μ
μ
A
A
150  
100  
μ
A
I
B
= 50  
5
μ
A
0
1
2
3
4
6
Collector to Emitter Voltage VCE (V)  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
RRENT GAIN vs.  
OR CURRENT  
1 000  
1
10  
V
CE = 1 V  
VCE = 2 V  
100  
10  
0.1  
1
0.1  
1
10  
(mA)  
100  
Collector
Collector Current I  
C
DC CU
COLLEC
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
1 000  
100  
10  
1 000  
100  
10  
V
CE = 3 V  
VCE = 4 V  
0.1  
1
10  
(mA)  
100  
0.1  
1
10  
(mA)  
100  
Collector Current I  
C
Collector Current I  
C
Remark The graphs indicate nominal characteristics.  
4
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
30  
25  
30  
25  
20  
15  
V
CE = 1 V,  
V
CE = 2 V,  
f = 2 GHz  
f = 2 GHz  
20  
15  
10  
5
10  
5
0
0
1
10  
100  
1
10  
100  
Collector Current I  
C
(mA)  
ollector Current I (mA)  
C
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
GWIDTH PRODUCT  
OR CURRENT  
3
5
30  
25  
20  
15  
10  
5
V
CE = 3 V,  
f = 2 GHz  
0
0
1
10  
1
10  
100  
Collector Cu
Collector Current I (mA)  
C
Remark The graphs ristics.  
5
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
40  
35  
30  
25  
35  
30  
25  
20  
15  
10  
5
V
CE = 1 V,  
V
CE = 2 V,  
I
C
= 50 mA  
I
C
= 50 mA  
MSG  
MAG  
MSG  
MAG  
20  
15  
10  
5
2
|S21e  
|
2
|S21e  
|
0
0.1  
0
0.1  
1
10  
100  
1
10  
100  
Frequency f (GHz)  
Frequency f (GHz)  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
TION POWER GAIN,  
G vs. FREQUENCY  
40  
35  
30  
25  
20  
15  
V
CE = 3 V,  
V
CE = 4 V,  
I
C
= 50 mA  
I
C
= 40 mA  
MSG  
MAG  
MAG  
2
|S21e  
|
2
|S21e  
|
10  
5
10  
5
0
0.1  
0
0.1  
1
1
10  
100  
Frequ
Frequency f (GHz)  
Remark The graphs tics.  
6
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MSG  
vs. COLLECTOR CURRENT  
30  
25  
20  
30  
25  
20  
15  
10  
5
V
CE = 1 V,  
V
CE = 2 V,  
f = 1 GHz  
f = 1 GHz  
MSG  
MAG  
MSG  
15  
10  
5
2
|S21e  
|
2
|S21e  
|
0
0
1
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INPOWER GAIN, MAG, MSG  
OR CURRENT  
30  
25  
20  
15  
10  
5
V
CE = 1 V,  
f = 2 GHz  
5
MSG  
MAG  
MSG  
MAG  
2
|S21e  
|
|S
0
0
1
10  
Collector
10  
Collector Current I  
(mA)  
100  
1
C
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION G  
vs. COLLEC
20  
15  
10  
5
20  
15  
10  
5
V
CE = 1 V,  
VCE = 2 V,  
f = 3 GHz  
f = 3 GHz  
MSG  
MAG  
MSG  
MAG  
2
2
|S21e  
|
|S21e|  
0
0
1
10  
Collector Current I  
100  
1
10  
Collector Current I  
(mA)  
100  
C
(mA)  
C
Remark The graphs indicate nominal characteristics.  
7
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
INSERTION POWER GAIN, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MSG  
vs. COLLECTOR CURRENT  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
V
CE = 3 V,  
V
CE = 4 V,  
f = 1 GHz  
f = 1 GHz  
MSG  
MSG  
2
2
|S21e  
|
|S21e|  
0
0
1
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INPOWER GAIN, MAG, MSG  
OR CURRENT  
30  
25  
20  
V
CE = 3 V,  
f = 2 GHz  
MSG  
MAG  
MSG  
MAG  
15  
10  
5
5
2
2
|S21e  
|
|S21e|  
0
0
1
10  
Collector
1
10  
Collector Current I (mA)  
100  
C
INSERTION G  
vs. COLLEC
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
20  
15  
10  
5
20  
15  
10  
5
V
CE = 3 V,  
VCE = 4 V,  
f = 3 GHz  
f = 3 GHz  
MSG  
MAG  
MSG  
MAG  
2
2
|S21e  
|
|S21e|  
0
0
1
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
Remark The graphs indicate nominal characteristics.  
8
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
OUTPUT POWER, POWER GAIN, I  
C
,
OUTPUT POWER, POWER GAIN, I  
C
,
COLLECTOR EFFICIENCY vs. INPUT POWER  
COLLECTOR EFFICIENCY vs. INPUT POWER  
120  
120  
25  
20  
15  
10  
5
25  
20  
15  
100  
80  
100  
80  
G
P
η
η
G
P
60  
10  
5
60  
Pout  
Pout  
IC  
IC  
ηC  
40  
40  
η
C
0
20  
0
20  
0
0
V
CE = 3.6 V, f = 1 GHz  
VCE = 3.6 V, f = 2 GHz  
Icq = 10 mA  
Icq = 10 mA  
–5  
–5  
–20  
–15  
–10  
–5  
0
5
10  
–15  
–10  
–5  
0
5
10  
15  
Input Power Pin (dBm)  
Input Power Pin (dBm)  
OUTPUT POWER, POWER GAIN, I  
C
,
OUTPUT POWPOWER GAIN, I  
C
,
COLLECTOR EFFICIENCY vs. INPUT POWER  
COLLECTONCY vs. INPUT POWER  
120  
120  
25  
20  
15  
10  
5
25  
2
V
CE = 3.6 V, f = 3 GHz  
Icq = 10 mA  
100  
80  
100  
80  
η
η
Pout  
out  
GP  
60  
60  
IC  
IC  
4
40  
η
C
20  
0
0
η
C
–5  
5  
–15  
–10  
–5  
0
5
–10  
–5  
0
5
10  
15  
20  
Input Power Pin (
Input Power Pin (dBm)  
Remark The graphs ind
9
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
5
5
4
3
2
1
0
25  
20  
15  
10  
25  
20  
15  
10  
4
3
2
1
0
G
a
G
a
NF  
NF  
5
0
5
0
V
CE = 1 V,  
V
CE = 2 V,  
f = 1 GHz  
f = 1 GHz  
1
10  
Collector Current I  
100  
1
10  
Collector Current I  
100  
C
(mA)  
C
(mA)  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE E, ASSOCIATED GAIN  
vs. CURRENT  
5
4
3
2
1
0
5
0
25  
20  
15  
1
25  
20  
15  
10  
G
a
NF  
NF  
5
0
V
C
V
CE = 2 V,  
f
f = 2 GHz  
1
10  
Collector Curren
1
10  
Collector Current I  
100  
C
(mA)  
NOISE FIGURE,
vs. COLLECT
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
5
5
4
25  
20  
15  
10  
25  
20  
15  
10  
4
3
2
1
0
3
2
1
0
G
a
G
a
NF  
NF  
5
0
5
0
V
CE = 1 V,  
V
CE = 2 V,  
f = 3 GHz  
f = 3 GHz  
1
10  
Collector Current I  
100  
1
10  
Collector Current I  
100  
C
(mA)  
C
(mA)  
Remark The graphs indicate nominal characteristics.  
10  
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
5
4
25  
20  
15  
10  
5
4
25  
20  
15  
10  
Ga  
3
2
1
0
3
2
1
0
Ga  
NF  
NF  
5
0
5
0
V
CE = 3 V,  
V
CE = 3 V,  
f = 1 GHz  
f = 2 GHz  
1
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
5
4
25  
20  
15  
1
3
2
1
0
G
a
NF  
V
C
f
1
10  
Collector Curren
Remark The graphs ics.  
<R>  
S-PARAMETERS  
S-parameters and noise paprovided on our Web site in a format (S2P) that enables the direct import  
of the parameters to microwave csimulators without the need for keyboard inputs.  
Click here to download S-parameters.  
[RF and Microwave] [Device Parameters]  
URL http://www.necel.com/microwave/en/  
11  
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
PACKAGE DIMENSIONS  
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)  
1.0 0.05  
+0.07  
0.8  
–0.05  
itter  
Emitter  
Caution All four Emited to PWB in order to obtain better Electrical performance  
and heat s
12  
Data Sheet PU10395EJ03V0DS  
NESG2101M16  
The information in this document is current as of September, 2009. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products  
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NEC Electronics products are g three quality grades: "Standard", "Special" and  
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(1)  
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M8E0904E  

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