NHS006C [RENESAS]
INTELLIGENT POWER DEVICE;型号: | NHS006C |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | INTELLIGENT POWER DEVICE |
文件: | 总41页 (文件大小:789K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet
R07DS1167EJ0200
Rev.2.00
µPD166033T1U
INTELLIGENT POWER DEVICE
May 22, 2015
1. Overview
1.1 Description
Family:
µPD166033T1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches
with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
•
•
•
•
Built-in charge pump
3.3V compatible logic interface
Low standby current
Short circuit protection
Shutdown by over current detection
Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
Absolute Tch over temperature protection
Built-in diagnostic function
•
Proportional load current sensing
Defined fault signal in case of abnormal load condition
Loss of ground protection
•
•
•
•
•
•
•
Under voltage lock out
Active clamp operation at inductive load switch off
Cross current protection in case of H-bridge high side usage
Reverse battery protection by turn on the output
AEC Qualified
RoHS compliant
1.3 Application
•
•
•
Light bulb switching from 55W to 75W according to on-state resistance
Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
R07DS1167EJ0200 Rev.2.00
May 22, 2015
Page 1 of 39
µPD166033T1U Datasheet
2. Ordering Information
2. Ordering Information
Part No.
Nick name
NHS006A
Lead plating
Packing
Package
UPD166033T1U-E1-AY
Pure Matte Sn
Tape 2500 p/reel
TO252-7
Note: Part No. and Nick name are tentative and might change at anytime without notice.
2.1 Nick name
N H S 006 A
A: TO252-7
On-state resistance
B: 12-pin Power HSSOP
C: 24-pin Power HSSOP
S: Single channel
D: Dual channel
Q: Quad channel
Nch High-side
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µPD166033T1U Datasheet
3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Single Device
Voltage and Current Definition
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May 22, 2015
Page 3 of 39
µPD166033T1U Datasheet
3. Specification
3.2 Pin Configuration
Tab
3.2.1 TO252-7 Pin Configuration
Pin No.
Terminal Name
1
2
3
OUT
GND
IN
4, Tab
VCC
IS
5
6
7
SEN
OUT
1
2
3
4 5
6
7
Pin function
Terminal Name
Pin function
Recommended connection
Connected to GND through a 100 Ω resistor
Refer chapter 6.
GND
Ground connection
IN
Input signal
Connected to MCU port through 2k-50K serial
resistor.
IS
Current sense and Diagnosis output signal
Sense enable input
Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SEN
OUT
VCC
Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
Protected high-side power output
Connected to load with small 50-100nF capacitor
in parallel.
Positive power supply for logic supply as well as
output power supply
Connected to battery voltage with small 100nF
capacitor in parallel.
R07DS1167EJ0200 Rev.2.00
May 22, 2015
Page 4 of 39
µPD166033T1U Datasheet
3. Specification
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Vcc Voltage
Symbol
VCC
Rating
28
Unit
V
Test Condition
Vcc Voltage at reverse
battery condition
-VCC
-16
V
RL=1.5Ω, t<2min,
RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ, RGND=100Ω
Vcc voltage under Load
Dump condition
Vload dump
42
V
RI=1Ω, RL=1.5Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ,
RGND=100Ω, td=400ms
Load Current
Total power dissipation
for whole device (DC)
IL
PD
Self limited
1.85
A
W
Ta=85°C,
Device on 50mm×50mm×1.5mm epoxy PCB FR4
with 6 cm2 of 70 µm copper area
Voltage at IN pin
VIN
-2 ~ 16
-16
V
DC
RIN=2kΩ
At reverse battery condition, t<2min,
RIN=2kΩ, RSEN=2kΩ
IN pin current
Voltage at IS pin
IIN
VIS
10
VCC
mA
V
DC
DC
RIS=1kΩ
-16
-30
V
mA
V
At reverse battery condition, t<2min,
RL=1.5Ω, RIS=1kΩ
At reverse battery condition, t<2min,
RL=1.5Ω
DC
RSEN=2kΩ
At reverse battery condition, t<2min
IS Reverse current at
reverse battery condition
IIS(Rev)
VSEN
Voltage at SEN pin
-2 ~ 16
-16
RIN=2kΩ, RSEN=2kΩ
SEN pin current
ISEN
10
mA
°C
°C
V
DC
Channel Temperature
Storage Temperature
ESD susceptibility
Tch
Tstg
VESD
-40 to +150
-55 to +150
2000
HBM
AEC-Q100-002 std.
All pin
R=1.5kΩ, C=100pF
4000
IEC61000-4-2 std.
R=330Ω, C=150pF,
100nF at VCC and OUT
AEC-Q100-003 std.
R=0Ω, C=200pF
VCC, OUT
200
260
V
MM
Inductive load switch-off
energy dissipation single
pulse
Inductive load switch-off
energy dissipation
repetitive pulse
EAS
EAR
mJ
VCC=13.5V, Tch,start<150°C, RL=1.5Ω
230
mJ
VCC=13.5V, Tch,start=85°C, RL=1.5Ω
Remark) All voltages refer to ground pin of the device
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Page 5 of 39
µPD166033T1U Datasheet
3. Specification
3.4 Thermal Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Thermal characteristics
Rth(ch-a)
35
°C/W
According to JEDEC JESD51-2, -5, -7 on
FR4 2s2p board
Rth(ch-c)
0.7
°C/W
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Page 6 of 39
µPD166033T1U Datasheet
3. Specification
3.5 Electrical Characteristics
Operation function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Operating Voltage
Operating current
Symbol
VCC
Min
Typ
Max
28
Unit
V
Test Condition
VIN=4.5V, RL=1.5Ω
4.5
IGND
2.2
4
mA
µA
VIN=4.5V
Output Leakage current
IL(off)
0.5
Tch=25°C
VCC=13.5V,
VIN=0V,
VSEN=0V,
VIS=0V,
5
Tch=-40~125°C
Tch=25°C
VOUT=0V,
VGND=0V
VCC=13.5V,
VIN=0V,
Standby current
ICC(off)
0.5
1.5
µA
VSEN=0V,
VIS=0V,
Tch=-40~85°C
VOUT=0V,
VGND=0V
IL=9A
On-state resistance
Ron
6
mΩ
Tch=25°C
12
Tch=150°C
Low level IN pin voltage
High level IN pin voltage
Low level IN pin current
High level IN pin current
Clamping IN pin voltage 1)
Low level SEN pin voltage
VIL
0.8
V
V
VIH
IIL
2.5
2
25
25
µA
µA
V
VIN=0.8V
VIN=2.5V
IIH
2
VZIN
VSENL
5
6
6
0.8
V
High level SEN pin voltage VSENH
Low level SEN pin current ISENL
High level SEN pin current ISENH
Clamping SEN pin voltage1)
Under voltage shutdown
Under voltage restart
Turn on time
2.5
2
V
25
25
µA
µA
V
VSEN=0.8V
VSEN=2.5V
2
VZSEN
VCC(Uv)
VCC(Cpr)
ton
5
4.5
5.0
V
V
200
100
200
150
1.0
µs
µs
µs
µs
V/µs
V/µs
µs
VCC=13.5V, RL=1.5Ω
Turn on delay time
Turn off time
td(on)
toff
Turn off delay time
Slew rate on
td(off)
dV/dton
-dV/dtoff
ton-toff
Slew rate off
Switching drift1)
1.0
-50
+50
Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150°C drift from Tch=25°C
ton; Vout=Vcc-1.5V after input signal active
VCC=13.5V, Tch=25°C, RL=1.5Ω
Turn on energy loss 1)
Turn off energy loss 1)
Driving capability 1)
Eon
1.2
1.2
2.4
2.4
mJ
mJ
Eoff
Dr(capa)
105
135
mΩ
Tch=25°C, VCC=8~16V
Tch=105°C, VCC=8~16V
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
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May 22, 2015
Page 7 of 39
µPD166033T1U Datasheet
3. Specification
Protection function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Over current detection
current
IL(SC)
A
VCC=13.5V, Von=5V, Tch=25°C
80
130
Current limitation under
power limitation toggling
Current limitation under
absolute thermal toggling
Current limitation trigger
threshold during turn-on
Current limitation trigger
threshold during on-state
IL(CL)
A
A
VCC=13.5V
VCC=13.5V
VCC=13.5V
VCC=13.5V
VCC=13.5V
60
25
IL(TT)
Von(CL1)
Von(CL2)
td(CL)
V
1.0
0.3
500
V
Current limitation trigger
time after input signal
positive slope
µs
Absolute thermal
shutdown temperature
Thermal hysteresis for
absolute thermal toggling
Power limitation thermal
shutdown temperature
Power limitation restart
temperature
Output clamp at inductive
load switch off
Output current while GND
disconnection
aTth
150
°C
°C
°C
°C
V
aTth,hys
dTth
20
40
20
dTth,rest
art
Von,clam
p
30
40
1
VCC=13.5V, IL=40mA, Tch=25°C
IIN=0A, ISEN=0A, IGND=0A, IIS=0A
IL(GND)
mA
mΩ
On-state resistance at
reverse battery condition
Ron(rev)
7
Tch=25°C
Tch=150°C
VCC=-13.5V,
IL=9A
14
Gnd current at reverse
battery condition
IGND(rev)
-2
mA
VCC=-16V, Tch=25°C,
IIN=0A, ISEN=0A, IIS=0A
Remark) All voltages refer to ground pin of the device
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May 22, 2015
Page 8 of 39
µPD166033T1U Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Symbol
KILIS
Min
10000
8750
-15
Typ
Max
15000
16250
15
Unit
Test Condition
Current sense ratio
12500
12500
IL=9.2A
IL=1.8A
Current sense drift depend dKILIS
on temperature
%
µA
µA
mA
VCC=13.5V, Tch,start=25°C,
RL=1.5Ω
Sense current offset
current
Iis,offset
2
1
IL<10mA
Sense current leakage
current
Iis,dis
VIN=0V, VSEN=0V
Sense current under fault
condition
Iis,fault
3
9.5
9
VCC=13.5V, RIS=0.67kΩ
VCC=13.5V, RIS=1kΩ
VCC=13.5V, RIS=2kΩ
IIS>5µA
3.5
3.5
10
5.5
100
Minimum output current for IL(CSE)
current sense output
mA
V
Open load detection
threshold at off-state
VOUT(OL)
2.0
5.0
VIN=0V, Tch = -40~105°C
VIN =0V
OUT terminal current at
Open load condition
IOUT(OL)
-1.0
µA
µs
Open load detection delay tdop
after input negative slope
300
VIN=4.5V to 0V, VOUT>VOUT(OL)
Remark) All voltages refer to ground pin of the device
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May 22, 2015
Page 9 of 39
µPD166033T1U Datasheet
3. Specification
Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Sense current settling time tsis(on)
after input signal positive
slope
250
µs
VCC=13.5V, VIN=0V to 4.5V,
IL/IIS=KILIS, RL=1.5Ω
Sense current settling time tsis(off)
after input signal negative
slope 1)
10
20
20
µs
µs
µs
VIN=4.5V to 0V
Sense current settling time tssen(on)
after sense enable during
on-state 1)
VSEN=0V to 4.5V, RL=1.5Ω
VSEN=4.5V to 0V, RL=1.5Ω
Sense current settling time tssen(off)
after sense disable during
on-state 1)
Sense current settling time tsis(LC)
during on-state 1)
20
10
10
30
10
µs
µs
µs
µs
µs
RL=1.5Ω to 0.75Ω
VIN=0V to 4.5V, IL=IL(SC)
Von>Von(CL1)
Fault signal delay after
over current detection 1)
tdsc(fault)
tdpl(fault)
tdpl(off)
Fault signal delay after
power limitation valid 1)
Fault signal delay after
power limitation invalid 1)
Von<Von(CL1)
Fault signal delay after
tdot(fault)
IIS→IIS,fault
absolute thermal shutdown
1)
Fault signal delay after
open load detection at off-
state 1)
tdop(fault)
tdoff(fault)
10
10
µs
µs
VIN=0V, VOUT>VOUT(OL)
VIN=4.5V to 0V
Fault signal delay after
input negative slope 1)
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design
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May 22, 2015
Page 10 of 39
µPD166033T1U Datasheet
3. Specification
3.6 Feature Description
3.6.1 Driving Circuit
The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open
or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is
pulled down with constant current source.
VIN
RESD
IN
0
VOUT
IIN
Vcc
Internal ground
OFF
ON
OFF
ON
GND
0
t
Switching a resistive load
Switching lamps
VIN
VIN
0
0
IL
IL
0
0
VOUT
VOUT
Vcc
0
0
IIS
IIS
IIS,lim
t
t
0
0
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May 22, 2015
Page 11 of 39
µPD166033T1U Datasheet
3. Specification
Switching an inductive load
VIN
0
IL
0
VOUT
Vcc
0
Von,clamp
IIS
0
t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
V
CC
RESD
IN
ZDAZ ZDAZ
SW1
logic
RESD
SEN
ZDESD
OUT
Internal ground
GND
IS
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May 22, 2015
Page 12 of 39
µPD166033T1U Datasheet
3. Specification
3.6.2 Device behavior at over voltage condition
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.
VCC
RESD
RESD
IN
SEN
RIN
N-ch
MOSFET
logic
RSEN
ZDAZ
GND
ZDAZ
ZDESD
ZDESD
OUT
Internal ground
uC
IPD
IS
RGND
RIS
RL
3.6.3 Device behavior at low voltage condition
If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.
VIN
0
IL
0
VCC
VCC(CPr)
VCC(Uv)
VOUT
0
t
3.6.4 Loss of Ground protection
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.
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Page 13 of 39
µPD166033T1U Datasheet
3. Specification
3.6.5 Short circuit protection
Turn-on in an over load condition including short circuit condition
The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected
and restarts automatically in absolute thermal toggling mode. The device starts current limitation when (d) is detected.
The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
(d) Von > Von(CL1) after td(CL)
Over load condition including short circuit condition during on-state
The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth
Power limitation control
Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.
Absolute thermal toggling
Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.
delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.
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May 22, 2015
Page 14 of 39
µPD166033T1U Datasheet
3. Specification
State transition diagram
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
No
Shutdown
Yes
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down
Yes
Input
C
Return
No
IL > IL(NL)
Von=Von(NL)
Turn-on
B
No
Yes
Return
IN = Low
No
Yes
C
Turn-off
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Page 15 of 39
µPD166033T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(a) IL > IL(SC)
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before over current detection
After over current detection
Yes
C
Turn-off
Exit from off-latch
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Page 16 of 39
µPD166033T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before dTcht detection
Yes
During shutdowning by dTth detection
C
Power limitation control
Turn-off
During current limitation control
Exit from power limitation control
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µPD166033T1U Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before aTcht detection
Yes
During shutdowning by aTth detection
C
Thermal toggling
Turn-off
During current limitation control
Exit from power limitation control
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3. Specification
An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before Von(CL) detection after turn on
Yes
C
After Von(CL) detection
During shutdowning by dTth detection
Turn-off
Power limitation control
During current limitation control
Exit from power limitation control
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3. Specification
An over load condition including short circuit condition during on-state
(a) Von > Von(CL) with dead condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before Von(CL) detection after turn on
Yes
C
After Von(CL) detection
After over current detection
Turn-off
Exit from power limitation control
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µPD166033T1U Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before dTth detection after turn on
During shutdowning by dTth
Yes
C
Turn-off
Exit from thermal protection control
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µPD166033T1U Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Yes
No
Thermal
Tch > Tth
Shutdown by latch
No
Yes
Over current
C
Von < Von(CL1)
Yes
No
Shutdown
IN = Low
Yes
No
IL(lim)=IL(TT)
Input
Thermal
Return
B
Von < Von(CL2)
Current limitation
Thermal
td(CL) unexpired
Yes
No
No
Yes
dTch > dTth
Thermal
No
Yes
A
B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Input
Yes
Input
Over current
IN = Low
C
No
Yes
Shutting down?
Yes
Input
C
Return
No
IL > IL(NL)
Yes
Von=Von(NL)
Turn-on
B
No
Return
IN = Low
No
Before aTth detection after turn on
During shutdowning by aTth
Yes
C
Turn-off
Exit from thermal protection control
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µPD166033T1U Datasheet
3. Specification
3.6.6 Device behavior at small load current conduction
The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to
increase to be Von=Von(NL)=30mV(typ).
Von
Von(NL)
IL(NL)
IL
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3. Specification
3.6.7 Diagnostic signal
Truth table
SEN
Input
Output
VCC
L 1)
L 1)
L 1)
Diagnostic output 2)
H
H
L
IIS = IL/KILIS
< 1µA (Iis,dis)
Iis,fault 3)
Normal Operation
H
L
Shutdown by over
current detection
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 4) in case of Von>Von(CL1)
VOUT 6)
H
Power limitation
L 1)
L 1)
Iis,fault 4)
L
< 1µA (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
Iis,fault 5) in case of Von>Von(CL1)
Iis, fault 5)
VOUT 6)
H
Thermal toggling
L 1)
L
L 1)
< 1µA (Iis,dis)
H
L
VCC
VOUT 7)
VCC
VOUT 7)
X 8)
< 2µA (Iis,offset)
Short circuit to VCC
Iis,fault in case of VOUT>VOUT(OL)
< 2µA (Iis,offset)
H
L
X 8)
Open Load
X 8)
Iis,fault in case of VOUT>VOUT(OL)
< 1µA (Iis,dis)
L
1) In case of OUT terminal is connected to GND via load.
2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
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µPD166033T1U Datasheet
3. Specification
Current sense output
The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA,
IIS,offset max, if output current is below IL(CSE) min.
IIS
IIS
KILIS=IL/IIS
5µA
2µA
IIS,offset
IL
IL
IL(CSE)
Sense current under fault condition
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1kΩ condition.
IIS,fault
1kΩ load line
VCC
VCC-VIS
VCC
GND
9mA
IS
3.5mA
VIS
RIS
VCC-VIS
VCC-VIS
VCC
VIS
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µPD166033T1U Datasheet
Sense current settling time
VIN
3. Specification
VSEN
tsis(LC)
VOUT
tsis(on)
tsis(LC)
tssen(off) tssen(on)
tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
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µPD166033T1U Datasheet
3. Specification
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear
Short circuit disappear
Power limitation
VOUT
tdpl(fault)
tdpl(off)
IIS
Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear Power
Short circuit disappear
Thermal toggling
limitation
VOUT
tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
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µPD166033T1U Datasheet
3. Specification
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection
Open load detection
VOUT
Iis,fault
tdop(fault)
tdop
IIS
Iis,dis
Iis,offset
3.6.8 Nominal load
Product
Nominal load
NHS006A
1.5Ω
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µPD166033T1U Datasheet
3. Specification
3.6.9 Driving Capability
Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.
VIN
IL(SC) specified point
IL [A]
NHS006A: 80A
t
128
IL(SC) characteristics
IL
5
13.5 Von [V]
t
Driving Capability:
30ms
NHS006A:105mΩ
3.6.10 Cross current protection in case of H-bridge high side usage
In case of using High side driver in H-bridge circuit,
High side driver protects High side driver itself
Vbat
and also low side driver from high power dissipation
by cross current when low side driver switching on.
VCC
OUT
VCC
OUT
ON
OFF
IN
IN
Cross
current
Motor
current
M
PWM ON
OFF
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µPD166033T1U Datasheet
3. Specification
3.6.11 Reverse Battery Protection by turn on the output
In case of a reverse battery is applied to the device, the N-ch MOSFET will turn on only if reverse current flow from
GND pin. The reverse current through the N-ch MOSFET has to be limited by the connected load. IGND(rev) is limited
internally approx. 2mA even without external RGND. Reverse current flow from IN, SEN, IS should be limited by
external component such as recommendation value in Pin function, refer 3.2 Pin configuration.
IN
VCC
RIN
SEN
RSEN
N-ch MOSFET
OUT
uC
IPD
GND
IS
IGND(rev)
IL(rev)
RGND
RIS
RL
3.6.12 Measurement condition
Switching waveform of OUT terminal
VIN
ton
toff
td(off)
td(on)
90%
90%
70%
dV/dton
30%
70%
VOUT
-dV/dtoff
30%
10%
10%
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µPD166033T1U Datasheet
3. Specification
3.7 Package drawing
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µPD166033T1U Datasheet
3. Specification
3.8 Taping information
3.9 Marking information
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4. Typical characteristics
4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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4. Typical characteristics
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5. Thermal characteristics
5. Thermal characteristics
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µPD166033T1U Datasheet
6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100kΩ
GND Network recommendation
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
Vbat
Vbat
VCC
GND
VCC
GND
RGND
No external component is required.
External resistor is recommended in order to
limit the current through ZDAZ at load dump
condition. 100Ω is recommended as RGND.
R07DS1167EJ0200 Rev.2.00
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Page 39 of 39
Revision History
µPD166033T1U Datasheet
Description
Summary
Rev.
Date
Page
1-38
23
1.00
2.00
Mar 27, 2014
May 22, 2015
1st issue
"Device behavior at small load current conduction" is added.
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