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NHS030A [RENESAS]

INTELLIGENT POWER DEVICE;
NHS030A
型号： NHS030A
厂家： RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述：

INTELLIGENT POWER DEVICE
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Datasheet  
R07DS1114EJ0200  
Rev.2.00  
µPD166037T1J  
INTELLIGENT POWER DEVICE  
May 22, 2015  
1. Overview  
1.1 Description  
Family:  
µPD166037T1J is a part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switch with  
charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded  
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number  
combination.  
Scalability:  
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design  
depending on target load.  
Robustness:  
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against  
long term and repetitive short circuit condition.  
1.2 Features  
- Built-in charge pump  
- 3.3V compatible logic interface  
- Low standby current  
- Short circuit protection  
- Shutdown by over current detection  
- Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)  
- Absolute Tch over temperature protection  
- Built-in diagnostic function  
- Proportional load current sensing  
- Defined fault signal in case of abnormal load condition  
- Loss of ground protection  
- Under voltage lock out  
- Active clamp operation at inductive load switch off  
- AEC Qualified  
- RoHS compliant  
1.3 Application  
- Light bulb switching from 21W to 32W  
- Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor  
- Power supply switch, fail-safe switch of 14V DC grounded system  
Note: The information contained in this document is the one that was obtained when the document was issued,  
and may be subject to change.  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 1 of 39  
µPD166037T1J Datasheet  
2. Ordering Information  
2. Ordering Information  
Part No.  
Nick name  
Lead plating  
Pure Matte Sn  
Pure Matte Sn  
Packing  
Package  
UPD166037T1J-E1-AY  
UPD166037T1J-E2-AY  
NHD030B  
NHD030B  
Tape 1500 p/reel  
Tape 1500 p/reel  
12-pin Power HSSOP  
12-pin Power HSSOP  
Note: MSL: 1, profile acc. J-STD-20C  
2.1 Nick name  
N H D 030 B  
A: TO252-7  
On-state resistance  
B: 12-pin Power HSSOP  
C: 24-pin Power HSSOP  
S: Single channel  
D: Dual channel  
Q: Quad channel  
Nch High-side  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 2 of 39  
µPD166037T1J Datasheet  
3. Specification  
3. Specification  
3.1 Block Diagram  
3.1.1 Nch High-side Dual Device  
Voltage and Current Definition  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 3 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.2 Pin Configuration  
3.2.1 12-pin Power HSSOP Pin Configuration  
Pin No.  
Terminal Name  
12 11 10 9  
8 7  
1
GND  
IN1  
2
3
IS1  
4
IS2  
5
IN2  
6
VCC  
SEN  
OUT2  
OUT2  
OUT1  
OUT1  
VCC  
VCC  
Tab  
Tab  
7
8
9
10  
11  
12  
Tab  
1
2
3
4 5 6  
Pin function  
Terminal Name Pin function  
Recommended connection  
GND  
Ground connection  
Connected to GND through a 100 Ohm resistor  
or a diode for reverse current protection  
Refer chapter 6.  
INn  
Input signal for channel n (n=1 to 2)  
Connected to MCU port through 2k-50K serial  
resistor  
ISn  
Current sense and Diagnosis output signal  
channel n (n=1 to 2)  
Connected to GND through a 0.67K-5K resistor  
SEN  
OUTn  
VCC  
N.C.  
Sense enable input  
Connected to MCU port through 2k-50K serial  
resistor  
Protected high-side power output channel n (n=1 Connected to load with small 50-100nf capacitor  
to 2) in parallel  
Positive power supply for logic supply as well as Connected to battery voltage with small 100nf  
output power supply  
Non connection  
capacitor in parallel  
Left open  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 4 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.3 Absolute Maximum Ratings  
Ta=25degreeC, unless other specified  
Parameter  
Vcc Voltage  
Symbol  
V
CC  
Rating  
28  
Unit  
V
Test Condition  
Vcc Voltage at reverse  
battery condition  
-V  
-16  
200  
42  
V
mA  
V
RL=5.4ohm, t<2min,  
RIN=2kohm, RSEN=2kohm , RGND=100ohm  
RL=5.4ohm, t<2min  
CC  
GND Reverse current at  
reverse battery condition  
Vcc voltage under Load  
Dump condition  
I
GND(Rev)  
Vload dump  
RI=1ohm, RL=5.4ohm, RIS=1kohm, RIN=2kohm,  
RSEN=2kohm , RGND=100ohm, td=400ms,  
Load Current  
I
Self limited  
1.85  
A
L
Total power dissipation  
for whole device (DC)  
P
W
Ta=85degreeC,  
Device on 50mmx50mmx1.5mm epoxy PCB FR4  
with 6 cm2 of 70 um copper area  
D
Voltage at IN pin  
V
-2 ~ 16  
-16  
V
DC  
RIN=2kohm  
At reverse battery condition, t<2min,  
RIN=2kohm, RSEN=2kohm  
DC  
IN  
IN pin current  
I
10  
mA  
V
IN  
VIS  
Voltage at IS pin  
VCC  
DC  
RIS=1kohm  
-16  
-30  
V
mA  
V
At reverse battery condition, t<2min,  
RL=5.4ohm, RIS=1kohm  
At reverse battery condition, t<2min,  
RL=5.4ohm  
IS Reverse current at IIS(Rev)  
reverse battery condition  
Voltage at SEN pin  
V
-2 ~ 16  
-16  
DC  
SEN  
RSEN=2kohm  
At reverse battery condition, t<2min  
RIN=2kohm, RSEN=2kohm  
DC  
SEN pin current  
I
10  
mA  
SEN  
Channel Temperature  
Storage Temperature  
ESD susceptibility  
Tch  
Tstg  
VESD  
-40 to +150  
-55 to +150  
2000  
degreeC  
degreeC  
V
HBM  
AEC-Q100-002 std.  
All pin  
R=1.5kohm, C=100pF  
4000  
IEC61000-4-2 std.  
VCC, OUT  
R=330ohm, C=150pF,  
100nF at VCC and OUT  
AEC-Q100-003 std.  
R=0ohm, C=200pF  
200  
50  
V
MM  
Inductive load switch-off  
energy dissipation single  
pulse  
Inductive load switch-off  
energy dissipation  
repetitive pulse  
EAS  
EAR  
mJ  
VCC=13.5V, Tch,start<150degreeC, RL=5.4ohm  
30  
mJ  
VCC=13.5V, Tch,start=85degreeC, RL=5.4ohm  
Remark) All voltages refer to ground pin of the device  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 5 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.4 Thermal Characteristics  
Parameter  
Symbol  
Min  
Typ  
35  
Max  
Unit  
degree According to JEDEC JESD51-2, -5, -7 on  
C/W FR4 2s2p board  
Test Condition  
Thermal characteristics  
Rth(ch-a)  
Rth(ch-c)  
1.3  
degree All channel  
C/W  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 6 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.5 Electrical Characteristics  
Operation function  
Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified  
Parameter  
Symbol  
Min  
4.5  
Typ  
Max  
28  
Unit  
V
Test Condition  
V =4.5V  
IN  
Operating Voltage  
V
CC  
RL=5.4ohm  
Operating current per  
channel  
I
I
2.2  
4
mA  
µA  
VIN=4.5V  
GND  
L(off)  
Output Leakage current  
per channel  
0.5  
Tch=25°C  
VCC=13.5V,  
VIN=0V,  
VSEN=0V,  
VIS=0V,  
3
0.5  
2
Tch=-40~125°C  
Tch=25°C  
VOUT=0V,  
VGND=0V  
VCC=13.5V,  
VIN=0V,  
Standby current  
I
µA  
CC(off)  
VSEN=0V,  
VIS=0V,  
Tch=-40~85°C  
VOUT=0V,  
VGND=0V  
On-state resistance per  
channel  
Ron  
30  
mohm  
Tch=25°C, IL=2.5A  
60  
Tch=150°C, IL=2.5A  
Low level IN pin voltage  
High level IN pin voltage  
Low level IN pin current  
High level IN pin current  
Clamping IN pin voltage 1)  
Low level SEN pin voltage  
High level SEN pin voltage  
Low level SEN pin current  
High level SEN pin current  
Clamping SEN pin voltage1)  
Under voltage shutdown  
Under voltage restart  
Turn on time  
V
0.8  
V
V
IL  
V
2.5  
2
IH  
I
25  
25  
µA  
µA  
V
VIN=0.8V  
VIN=2.5V  
IL  
I
2
IH  
V
5
6
6
ZIN  
V
0.8  
V
SENL  
V
I
2.5  
2
V
SENH  
25  
25  
µA  
µA  
V
VSEN=0.8V  
VSEN=2.5V  
SENL  
SENH  
I
2
V
V
5
ZSEN  
4.5  
5.0  
V
CC(Uv)  
V
V
CC(Cpr)  
ton  
200  
100  
200  
150  
1.5  
µs  
µs  
µs  
µs  
V/µs  
V/µs  
µs  
VCC=13.5V, RL=5.4ohm  
Turn on delay time  
td(on)  
toff  
Turn off time  
Turn off delay time  
td(off)  
dV/dton  
-dV/dtoff  
ton-toff  
Slew rate on  
Slew rate off  
Switching drift1)  
1.5  
-50  
+50  
Vcc = 9 to 18V drift from Vcc=13.5V,  
Tch=-40 to 150degreeC drift from  
Tch=25degreeC  
ton; Vout=Vcc-1.5V after input signal active  
Turn on energy loss 1)  
Turn off energy loss 1)  
Driving capability 1)  
Eon  
0.3  
0.3  
0.6  
0.6  
mJ  
mJ  
VCC=13.5V,Tch=25°C, RL=5.4ohm  
Eoff  
Dr(capa)  
300  
350  
mohm  
Tch=25°C, VCC=8~16V  
Tch=105°C, VCC=8~16V  
Remark) All voltages refer to ground pin of the device  
1) not subjected production test, guaranteed by design  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 7 of 39  
µPD166037T1J Datasheet  
3. Specification  
Protection function  
Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified  
Parameter  
Over current detection  
current  
Symbol  
IL(SC)  
Min  
40  
Typ  
60  
Max  
Unit  
A
Test Condition  
VCC=13.5V, Von=5V, Tch=25°C  
Current limitation under  
power limitation toggling  
Current limitation under  
absolute thermal toggling  
Current limitation trigger  
threshold during turn-on  
Current limitation trigger  
threshold during on-state  
Absolute thermal  
shutdown temperature  
Thermal hysteresis for  
absolute thermal toggling  
Power limitation thermal  
shutdown temperature  
Power limitation restart  
temperature  
Output clamp at inductive  
load switch off  
Output current while GND  
disconnection  
IL(CL)  
IL(TT)  
A
A
VCC=13.5V  
VCC=13.5V  
VCC=13.5V  
VCC=13.5V  
20  
13  
Von(CL1)  
Von(CL2)  
aTth  
V
2.0  
0.8  
V
150  
°C  
°C  
°C  
°C  
V
aTth,hys  
dTth  
20  
60  
30  
dTth,rest  
art  
Von,clam  
p
30  
40  
1
VCC=13.5V, IL=40mA, Tch=25°C  
IIN=0A, ISEN=0A, IGND=0A, IIS=0A  
IL(GND)  
mA  
V
Output voltage drop at  
reverse battery condition  
Vds(rev)  
0.9  
0.7  
Tch=25°C  
VCC=-13.5V,  
RL=5.4ohm  
Tch=150°C  
Remark) All voltages refer to ground pin of the device  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 8 of 39  
µPD166037T1J Datasheet  
3. Specification  
Diagnosis function  
Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified  
Parameter  
Symbol  
KILIS  
Min  
2720  
2380  
-15  
Typ  
3400  
3400  
Max  
4080  
4420  
15  
Unit  
Test Condition  
IL=2.5A  
Current sense ratio  
IL=0.5A  
Current sense drift depend  
on temperature  
dKILIS  
Iis,offset  
Iis,dis  
%
µA  
µA  
mA  
VCC=13.5V, Tch,start=25°C,  
RL=5.4ohm  
Sense current offset  
current  
2
1
IL<10mA  
Sense current leakage  
current  
VIN=0V, VSEN=0V  
Sense current under fault  
condition  
Iis,fault  
3
9.5  
9
VCC=13.5V, RIS=0.67kohm  
VCC=13.5V, RIS=1kohm  
VCC=13.5V, RIS=2kohm  
IIS>5µA  
3.5  
3.5  
10  
5.5  
50  
Minimum output current for  
current sense output  
IL(CSE)  
VOUT(OL)  
IOUT(OL)  
tdop  
mA  
V
Open load detection  
threshold at off-state  
2.0  
5.0  
VIN=0V, Tch=-40~105°C  
VIN =0V  
OUT terminal current at  
Open load condition  
-1.0  
µA  
µs  
Open load detection delay  
after input negative slope  
300  
VIN=4.5V to 0V, VOUT>VOUT(OL)  
Remark) All voltages refer to ground pin of the device  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 9 of 39  
µPD166037T1J Datasheet  
3. Specification  
Diagnosis function  
Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified  
Parameter  
Symbol  
tsis(on)  
Min  
Typ  
Max  
250  
Unit  
µs  
Test Condition  
Sense current settling time  
after input signal positive  
slope  
VCC=13.5V, VIN=0V to 4.5V,  
IL/IIS=KILIS, RL=5.4ohm  
Sense current settling time  
after input signal negative  
slope  
tsis(off)  
tssen(on)  
tssen(off)  
10  
20  
20  
µs  
µs  
µs  
VIN=4.5V to 0V  
Sense current settling time  
after sense enable during  
on-state 1)  
VSEN=0V to 4.5V, RL=5.4ohm  
VSEN=4.5V to 0V, RL=5.4ohm  
Sense current settling time  
after sense disable during  
on-state 1)  
Sense current settling time  
during on-state 1)  
tsis(LC)  
tdsc(fault)  
tdpl(fault)  
tdpl(off)  
20  
10  
10  
30  
10  
µs  
µs  
µs  
µs  
µs  
RL=5.4ohm to 2.7ohm  
VIN=0V to 4.5V, IL=IL(SC)  
Von>Von(CL1)  
Fault signal delay after  
over current detection 1)  
Fault signal delay after  
power limitation valid 1)  
Fault signal delay after  
power limitation invalid 1)  
Von<Von(CL1)  
Fault signal delay after  
tdot(fault)  
IISIIS,fault  
absolute thermal shutdown  
1)  
Fault signal delay after  
open load detection at off-  
state 1)  
tdop(fault)  
tdoff(fault)  
10  
10  
µs  
µs  
VIN=0V, VOUT>VOUT(OL)  
VIN=4.5V to 0V  
Fault signal delay after  
input negative slope 1)  
Remark) All voltages refer to ground pin of the device  
1) not subjected production test, guaranteed by design  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 10 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6 Feature Description  
3.6.1 Driving Circuit  
The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is  
open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal  
is pulled down with constant current source.  
VIN  
RESD  
IN  
0
VOUT  
IIN  
Vcc  
Internal ground  
OFF  
ON  
OFF  
ON  
GND  
0
t
Switching a resistive load  
Switching lamps  
VIN  
VIN  
0
0
IL  
IL  
0
0
VOUT  
VOUT  
Vcc  
0
0
IIS  
IIS  
t
t
0
0
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 11 of 39  
µPD166037T1J Datasheet  
3. Specification  
Switching an inductive load  
VIN  
0
IL  
0
VOUT  
Vcc  
0
Von,clamp  
IIS  
0
t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,  
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the  
source of SW1 (= gate of output MOS) falls below the GND voltage.  
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.  
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.  
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is  
not activated.  
V
CC  
RESD  
IN  
ZDAZ ZDAZ  
SW1  
logic  
RESD  
SEN  
ZDESD  
OUT  
Internal ground  
GND  
IS  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 12 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.2 Device behavior at over voltage condition  
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of  
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load  
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.  
VCC  
RESD  
RESD  
IN  
SEN  
RIN  
N-ch  
MOSFET  
logic  
RSEN  
ZDAZ  
GND  
ZDAZ  
ZDESD  
ZDESD  
OUT  
Internal ground  
uC  
IPD  
IS  
RGND  
RIS  
RL  
3.6.3 Device behavior at low voltage condition  
If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase  
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.  
The IS output is cleared during off-state.  
VIN  
0
IL  
0
VCC  
VCC(CPr)  
VCC(Uv)  
VOUT  
0
t
3.6.4 Loss of Ground protection  
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off  
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.  
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 13 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.5 Short circuit protection  
Turn-on in an over load condition including short circuit condition  
The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched  
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device  
restarts automatically when device cooling to dTch,restart. The output current is limited by output power MOSFET  
saturation current. The device shuts down automatically when condition (c) is detected and restarts automatically in  
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.  
In case of device shutdown by (c) detection but also (b) condition, the output current is limited by IL(CL).  
(a) IL > IL(SC)  
(b) deltaTch > dTth  
(c) Tch > aTth  
Over load condition including short circuit condition during on-state  
The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).  
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power  
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in  
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.  
(a) Von > Von(CL2)  
(b) deltaTch > dTth  
(c) Tch > aTth  
Power limitation control  
Current limitation control with IL(CL) when auto restart from deltaTch protection.  
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta  
Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as current  
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling  
operation with power limitation mode.  
Absolute thermal toggling  
Current limitation control with IL(TT) when auto restart from absolute Tch protection.  
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from  
absolute Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as  
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during  
toggling operation with thermal toggling mode.  
delta Tch  
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 14 of 39  
µPD166037T1J Datasheet  
3. Specification  
State transition diagram  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
No  
Shutdown  
Yes  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Turn-on  
B
Yes  
C
Turn-off  
Return  
IL(lim) initial value is power MOSFET saturation current.  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 15 of 39  
µPD166037T1J Datasheet  
3. Specification  
Turn-on in an over load condition including short circuit condition  
(a) IL > IL(SC)  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before over current detection  
After over current detection  
Turn-on  
B
Yes  
C
Turn-off  
Exit from off-latch  
Return  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 16 of 39  
µPD166037T1J Datasheet  
3. Specification  
Turn-on in an over load condition including short circuit condition  
(b) deltaTch > dTth  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before dTcht detection  
Turn-on  
B
Yes  
During shutdowning by dTth detection  
C
Turn-off  
During current limit by saturation current  
Exit from current limitation control  
Return  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 17 of 39  
µPD166037T1J Datasheet  
3. Specification  
Turn-on in an over load condition including short circuit condition  
(c) Tch > aTth  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before aTcht detection  
Turn-on  
B
Yes  
During shutdowning by aTth detection  
C
Turn-off  
During current limitation control  
Exit from power limitation control  
Return  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 18 of 39  
µPD166037T1J Datasheet  
3. Specification  
An over load condition which is include a short circuit condition during on-state  
(a) Von > Von(CL) with weak short condition  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before Von(CL) detection after turn on  
Turn-on  
B
Yes  
C
After Von(CL) detection  
During shutdowning by dTth detection  
Turn-off  
Return  
During current limitation control  
Exit from power limitation control  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 19 of 39  
µPD166037T1J Datasheet  
3. Specification  
An over load condition including short circuit condition during on-state  
(a) Von > Von(CL) with dead condition  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before Von(CL) detection after turn on  
Turn-on  
B
Yes  
C
After Von(CL) detection  
After over current detection  
Turn-off  
Return  
Exit from power limitation control  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 20 of 39  
µPD166037T1J Datasheet  
3. Specification  
An over load condition including short circuit condition during on-state  
(b) deltaTch > dTth  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Turn-on  
B
Yes  
C
Before dTth detection after turn on  
During shutdowning by dTth detection  
Exit from thermal protection control  
Turn-off  
Return  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 21 of 39  
µPD166037T1J Datasheet  
3. Specification  
An over load condition including short circuit condition during on-state  
(c) Tch > aTth  
Over current  
Turn-on  
Thermal  
IN -> High  
Input  
A
IL > IL(SC)  
Yes  
No  
Thermal  
Tch > Tth  
Shutdown by latch  
No  
Yes  
Over current  
C
Von < Von(CL1)  
Yes  
No  
Shutdown  
IN = Low  
Yes  
No  
IL(lim)=IL(TT)  
Input  
Thermal  
Return  
B
Von < Von(CL2)  
Current limitation  
Thermal  
A
No  
Yes  
dTch > dTth  
Thermal  
No  
No  
Yes  
Shutdown  
IL(lim)=IL(CL)  
IL > IL(lim)  
No  
Yes  
Input  
IL(lim)=IL(TT)  
Yes  
Over current  
IL(lim)=IL(CL)  
IN = Low  
C
No  
Yes  
Input  
Input  
C
Return  
IL > IL(NL)  
Yes  
Von=Von(NL)  
No  
Shutting down  
Yes  
No  
IN = Low  
No  
Before aTth detection after turn on  
During shutdowning by aTth detection  
Exit from thermal protection control  
Turn-on  
B
Yes  
C
Turn-off  
Return  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 22 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.6 Device behavior at small load current conduction  
The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.  
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to  
increase to be Von=Von(NL)=30mV(typ).  
Von  
Von(NL)  
IL(NL)  
IL  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 23 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.7 Diagnostic signal  
Truth table  
SEN  
H
Input  
H
Output  
VCC  
L 1)  
Diagnostic output 2)  
IIS = IL/KILIS  
< 1uA (Iis,dis)  
Iis,fault 3)  
Normal Operation  
L
H
L 1)  
Shutdown by over  
current detection  
L
L 1)  
< 1uA (Iis,dis)  
IIS = IL/KILIS in case of Von<Von(CL1)  
Iis,fault 4) in case of Von>Von(CL1)  
Iis,fault 4)  
VOUT 6)  
H
L
Power limitation  
L 1)  
L 1)  
< 1uA (Iis,dis)  
IIS = IL/KILIS in case of Von<Von(CL1)  
Iis,fault 5) in case of Von>Von(CL1)  
Iis, fault 5)  
VOUT 6)  
H
Thermal toggling  
L 1)  
L
L 1)  
< 1uA (Iis,dis)  
H
VCC  
< 2uA (Iis,offset)  
Short circuit to VCC  
L
VOUT 7) Iis,fault in case of VOUT>VOUT(OL)  
VCC < 2uA (Iis,offset)  
VOUT 7) Iis,fault in case of VOUT>VOUT(OL)  
X 8)  
< 1uA (Iis,dis)  
H
Open Load  
X 8)  
L
L
X 8)  
1) In case of OUT terminal is connected to GND via load.  
2) In case of IS terminal is connected to GND via resister.  
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.  
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).  
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..  
6) VOUT depends on the short circuit condition  
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.  
8) Don’t care  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 24 of 39  
µPD166037T1J Datasheet  
3. Specification  
Current sense output  
The device output analog feedback current proportional to output current from IS pin. In the case of much higher  
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load  
current, current sense output is above 5uA if output current is above IL(CSE) max, current sense output is below 2uA,  
IIS,offset max, if output current is below IL(CSE) min.  
IIS  
IIS  
KILIS=IL/IIS  
5uA  
2uA  
IIS,offset  
IL  
IL  
IL(CSE)  
Sense current under fault condition  
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,  
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kohm condition. IIS,fault is  
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For  
example, In the case of RIS=1kohm, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be  
9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kohm, Operation point as IIS,fault is lower than specified  
value but VIS should be higher than RIS=1kohm condition.  
IIS,fault  
1kohm load line  
VCC  
VCC-VIS  
VCC  
GND  
9mA  
IS  
3.5mA  
VIS  
RIS  
VCC-VIS  
VCC-VIS  
VCC  
VIS  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 25 of 39  
µPD166037T1J Datasheet  
3. Specification  
Sense current settling time  
VIN  
VSEN  
tsis(LC)  
VOUT  
tsis(on)  
tsis(LC)  
tssen(off) tssen(on)  
tsis(off)  
IIS  
Fault signal delay time at over current detection  
VIN  
VSEN  
Over current detection  
VOUT  
Iis,fault  
IIS  
tdsc(fault)  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 26 of 39  
µPD166037T1J Datasheet  
3. Specification  
Fault signal delay time at power limitation  
VIN  
VSEN  
Short circuit appear  
Short circuit disappear  
Power limitation  
VOUT  
tdpl(fault)  
tdpl(off)  
IIS  
Iis,fault  
Fault signal delay time at Thermal toggling  
VIN  
VSEN  
Short circuit appear Power  
Short circuit disappear  
Thermal toggling  
limitation  
VOUT  
tdpl(fault)  
tdpl(off)  
Iis,fault  
IIS  
tsis(off)  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 27 of 39  
µPD166037T1J Datasheet  
3. Specification  
Fault signal delay time at open load detection  
VIN  
VSEN  
Open load condition appear  
Open load detection  
Open load detection  
VOUT  
Iis,fault  
tdop(fault)  
tdop  
IIS  
Iis,dis  
Iis,offset  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 28 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.8 Nominal load  
Product  
Nominal load  
NHD030B  
5.4ohm  
3.6.9 Driving Capability  
Driving Capability is specified as load impedance. Over current detection characteristics is designed below Driving  
Capability characteristics. If estimated load impedance which comes from peak inrush current is higher than Driving  
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown  
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load  
impedance which comes from peak inrush current is higher than Driving Capability characteristics, Power limitation  
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving  
Capability characteristics.  
VIN  
IL(SC) specified point  
IL [A]  
NHD030B: 40A  
t
45  
IL  
IL(SC) characteristics  
5
13.5 Von [V]  
t
Driving Capability:  
30ms  
NHD030B:300mohm  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 29 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.6.10 Measurement condition  
Switching waveform of OUT terminal  
VIN  
ton  
toff  
td(off)  
td(on)  
90%  
90%  
70%  
dV/dton  
30%  
70%  
-dV/dtoff  
30%  
VOUT  
10%  
10%  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 30 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.7 Package drawing  
12-pin Power HSSOP  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 31 of 39  
µPD166037T1J Datasheet  
3. Specification  
3.8 Taping information  
uPD166037T1J  
3.9 Marking information  
uPD166037T1J  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 32 of 39  
µPD166037T1J Datasheet  
4. Typical characteristics  
4. Typical characteristics  
R07DS1114EJ0200 Rev.2.00  
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µPD166037T1J Datasheet  
4. Typical characteristics  
R07DS1114EJ0200 Rev.2.00  
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Page 34 of 39  
µPD166037T1J Datasheet  
4. Typical characteristics  
R07DS1114EJ0200 Rev.2.00  
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Page 35 of 39  
µPD166037T1J Datasheet  
4. Typical characteristics  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 36 of 39  
µPD166037T1J Datasheet  
4. Typical characteristics  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 37 of 39  
µPD166037T1J Datasheet  
5. Thermal characteristics  
5. Thermal characteristics  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 38 of 39  
µPD166037T1J Datasheet  
6. Application example in principle  
6. Application example in principle  
RIN, RSEN, RAN values are in range of 2k to 50kohm depending microcontroller while R_L value is typically 4kohm.  
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s  
value is typically 100kohm  
GND Network recommendation  
In case of V_loaddump < 35V  
In case of 35V < V_loaddump < 42V  
Vbat  
Vbat  
VCC  
GND  
VCC  
GND  
RGND  
External diode is recommended in order to  
prevent reverse current toward control logic  
part at reverse battery condition.  
External diode and resistor are recommended  
in order to prevent reverse current toward  
control logic part at reverse battery condition  
and limit the current through ZDAZ at load  
dump condition. 100ohm is recommended as  
RGND.  
Note: If other component is installed to prevent reverse current at reverse battery condition,  
diode is not required in GND Network.  
Note: Approx. 10kohm additional resistor in parallel with diode is recommended depends on  
Vf- If performance of the diode.  
R07DS1114EJ0200 Rev.2.00  
May 22, 2015  
Page 39 of 39  
Revision History  
µPD166037T1J Datasheet  
Description  
Summary  
Rev.  
Date  
Page  
1-38  
23  
1.00  
2.00  
Sep. 17, 2013  
May 22, 2015  
1st issue  
"Device behavior at small load current conduction" is added.  
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products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes  
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.  
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or  
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the  
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and  
regulations and follow the procedures required by such laws and regulations.  
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the  
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics  
products.  
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.  
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3  
Tel: +1-905-237-2004  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-585-100, Fax: +44-1628-585-900  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-6503-0, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333  
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999  
Renesas Electronics Hong Kong Limited  
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2265-6688, Fax: +852 2886-9022  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics India Pvt. Ltd.  
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India  
Tel: +91-80-67208700, Fax: +91-80-67208777  
Renesas Electronics Korea Co., Ltd.  
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2015 Renesas Electronics Corporation. All rights reserved.  
Colophon 5.0  

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