NNCD9.1DA-T2-AT [RENESAS]
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR;型号: | NNCD9.1DA-T2-AT |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR 二极管 |
文件: | 总6页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
ESD NOISE CLIPPING DIODE
NNCD2.0DA to NNCD39DA
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
2-PIN SUPER MINI MOLD
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
These products are the diode developed for ESD (Electrostatic
Discharge) noise protection. Based on the IEC61000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance,
thus making itself most suitable for external interface circuit
protection.
2.5 0.15
1.7 0.1
FEATURES
• Based on the electrostatic discharge immunity test (IEC61000-4-2),
the product assures the minimum endurance
• Based on the reference supply of the set, the product achieves
a series over a wide range (32 product names lined up)
• Package: 2-pin Super Mini Mold (SC-76)
Cathode Indication
APPLICATIONS
• External interface circuit ESD protection
• Circuits for Waveform clipper, Surge absorber
ORDERING INFORMATION
<R>
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NNCD∗∗Note 1DA-T1-ATNote 2
Pure Sn (Tin)
Tape 3000 p/reel
2-pin Super Mini Mold
(SC-76)
Notes 1. Type Number
2. Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Rating
Unit
mW
Remark
Power Dissipation
P
200
When surface mounting on
30 mm x 30 mm x 1.6 mmt
P.C.B. (Glass Epoxy),
refer to Figure 1
Surge Reverse Power
Junction Temperature
Storage Temperature
PRSM
Tj
85
150
W
οC
οC
tT = 10 μs, 1 pulse, refer to Figure 5
Tstg
−55 to +150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18879EJ2V0DS00 (2nd edition)
Date Published January 2010 NS
Printed in Japan
2009
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NNCD2.0DA to NNCD39DA
ELECTRICAL CHARACTERISTICS (TA = 25°C)
<R>
Breakdown Voltage
VBR (V) Note 1
Dynamic Impedance Reverse Leakage
ZZ (Ω) Note 2
IR (μA)
MAX.
Capacitance
Ct (pF)
ESD Voltage
(kV) Note 3
Type Number
MIN.
MAX.
2.20
IT (mA)
MAX.
IT (mA)
VR (V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10
TYP.
Condition TYP.
Condition
NNCD2.0DA
NNCD2.2DA
NNCD2.4DA
NNCD2.7DA
NNCD3.0DA
NNCD3.3DA
NNCD3.6DA
NNCD3.9DA
NNCD4.3DA
NNCD4.7DA
NNCD5.1DA
NNCD5.6DA
NNCD6.2DA
NNCD6.8DA
NNCD7.5DA
NNCD8.2DA
NNCD9.1DA
NNCD10DA
NNCD11DA
NNCD12DA
NNCD13DA
NNCD15DA
NNCD16DA
NNCD18DA
NNCD20DA
NNCD22DA
NNCD24DA
NNCD27DA
NNCD30DA
NNCD33DA
NNCD36DA
NNCD39DA
1.90
2.10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100
100
100
110
120
130
130
130
130
130
130
80
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
120
120
120
120
50
20
10
10
10
10
5
260
250
240
235
225
220
210
200
180
170
160
140
120
110
90
VR = 0 V,
f = 1 MHz
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
25
20
20
C = 150 pF,
R = 330 Ω
2.40
2.30
2.60
2.50
2.90
2.80
3.20
3.10
3.50
3.40
3.80
3.70
4.10
4.00
4.49
4.40
4.92
4.82
5.39
5.29
5.94
5
5.84
6.55
50
2
6.44
7.17
30
2
7.03
7.87
30
2
7.73
8.67
30
2
90
8.53
9.58
30
2
85
9.42
10.58
11.60
12.64
14.00
15.56
17.14
19.08
21.14
23.25
25.66
28.90
32.00
35.00
38.00
41.00
30
2
80
10.40
11.38
12.43
13.80
15.31
16.89
18.80
20.81
22.86
25.10
28.00
31.00
34.00
37.00
30
2
70
35
2
70
35
2
55
40
2
11
48
40
2
12
43
45
2
13
38
50
2
15
34
55
2
17
30
60
2
19
29
70
2
21
25
80
2
23
24
80
2
25
23
90
2
27
22
100
2
30
21
Notes 1. VBR is tested with pulse (40 ms).
2. ZZ is measured at IT given a small A.C. signal.
3. Based upon with IEC61000-4-2.
2
Data Sheet D18879EJ2V0DS
NNCD2.0DA to NNCD39DA
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. POWER DISSIPATION vs.AMBIENT TEMPERATURE
250
P.C.B. (Glass Epoxy)
(30 mm x 30 mm x 1.6 mmt)
200
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
<R> Figure 2. IT - VBR CHARACTERISTICS (1/2)
NNCD7.5DA
NNCD8.2DA
NNCD6.8DA
NNCD11DA
NNCD10DA
NNCD9.1DA
100 m
10 m
1 m
100 m
10 m
1 m
NNCD3.3DA
NNCD3.6DA
NNCD3.9DA
NNCD4.3DA
NNCD12DA
NNCD4.7DA
μ
μ
μ
μ
μ
μ
100
10
1
100
10
1
NNCD5.1DA
NNCD5.6DA
100 n
10 n
1 n
100 n
10 n
1 n
NNCD6.2DA
0
1
2
3
4
5
6
7
8
9
10
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
3
Data Sheet D18879EJ2V0DS
NNCD2.0DA to NNCD39DA
Figure 2. IT - VBR CHARACTERISTICS (2/2)
100
10
NNCD20DA
NNCD22DA
NNCD18DA
NNCD27DA
1
NNCD36DA
NNCD39DA
0.1
0.01
0.001
15
20
25
30
35
40
45
VBR - Breakdown Voltage - V
Figure 4. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
5000
1000
625°C/W
NNCD[ ]DA
100
P.C.B. (Glass Epoxy)
(30 mm x 30 mm x 1.6 mmt)
10
5
1 m
10 m
100 m
t - Time - s
1
10
100
4
Data Sheet D18879EJ2V0DS
NNCD2.0DA to NNCD39DA
Figure 5. SURGE REVERSE POWER RATINGS
1000
Non-repentitive
tT
100
10
1
NNCD[ ]DA
1
μ
10
μ
100
μ
1 m
10 m
100 m
tT - Pulse Width - s
SAMPLE APPLICATION CIRCUIT
Set Note
Connector
Micro
com.
.
.
.
PC
(CD-ROM)
Parallel
Interface
Interface Cable
Note Set: Printer, P.C.D., T.V, Game, etc.
5
Data Sheet D18879EJ2V0DS
NNCD2.0DA to NNCD39DA
• The information in this document is current as of January, 2010. The information is subject to change without notice. For
actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date
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(M8E0909E)
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