NP16N06YLL [RENESAS]
60 V â 16 A â N-channel Power MOS FET Application: Automotive;
| 型号： | NP16N06YLL |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 60 V â 16 A â N-channel Power MOS FET Application: Automotive |
| 文件： | 总9页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NP16N06YLL
60 V – 16 A – N-channel Power MOS FET
Application: Automotive
R07DS1124EJ0100
Rev.1.00
Oct 30, 2013
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
•
Low on-state resistance
⎯ RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
Logic level drive type
Gate to Source ESD protection diode built in
Designed for automotive application and AEC-Q101 qualified
•
•
•
•
Outline
Drain
8-pin HSON
5
Body
Diode
6
7
Gate
8
Gate
Protection
Diode
4
3
Source
2
1
1, 2, 3 : Source
: Gate
5, 6, 7, 8: Drain
4
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Pure Sn (Tin)
Packing
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
1
1
NP16N06YLL-E1-AY *
NP16N06YLL-E2-AY *
Tape 2500 p/reel
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 1 of 7
NP16N06YLL
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
60
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
±20
V
±16
A
1
Drain Current (pulse) ∗
±32
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗
Channel Temperature
27.3
W
W
°C
°C
A
2
PT2
1.25
Tch
175
Storage Temperature
Single Avalanche Current ∗
Single Avalanche Energy ∗
Tstg
−55 to +175
10
3
IAS
3
EAS
10
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗
Rth(ch-C)
Rth(ch-A)
5.49
°C/W
°C/W
2
120.0
Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm)
*3. Tch(start) = 25°C, VDD = 30 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 2 of 7
NP16N06YLL
Electrical Characteristics (TA = 25°C)
Item
Symbol
IDSS
Min
Typ
Max
1
Unit
μA
μA
V
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IGSS
±10
2.0
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.0
5
1.5
12
31
42
400
84
54
8
VDS = 10 V, I = 1 mA
D
1
Forward Transfer Admittance ∗
S
VDS = 5.0 V, ID = 8 A
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 8 A
VDS = 25 V,
Drain to Source On-state
35
55
mΩ
mΩ
pF
pF
pF
ns
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
600
130
100
16
VGS = 0 V,
Coss
Crss
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 8 A,
VGS = 10 V,
8
20
ns
RG = 0 Ω
Turn-off Delay Time
Fall Time
25
5
50
ns
12.5
18
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
12
1.4
4
nC
nC
nC
V
VDD = 48 V,
VGS = 10 V,
ID = 16 A
QGS
QGD
VF(S-D)
trr
1
Body Diode Forward Voltage ∗
0.95
27
28
1.24
IF = 16 A, VGS = 0 V
IF = 16 A, VGS = 0 V,
di/dt = 100 A/μs
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed test
ns
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
VGS
RL
R
G = 25 Ω
50 Ω
90%
VGS
VGS
10%
Wave Form
0
RG
PG.
PG.
VDD
VDD
VGS = 20 → 0 V
VDS
90%
90%
tf
VDS
0
VGS
0
BVDSS
10% 10%
IAS
VDS
Wave Form
ID
VDS
τ
td(on)
tr
td(off)
VDD
ton
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G = 2 mA
I
RL
PG.
50 Ω
VDD
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 3 of 7
NP16N06YLL
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
30
25
20
15
10
5
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
ID(Pulse) = 32 A
RDS(ON) Limited
PW = 10 ms
(VGS=10 V)
ID(DC) = 16 A
Power Dissipation Limited
Secondary Breakdown Limited
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 120°C/W
Rth(ch-C) = 5.5°C/W
1
0.1
0.01
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm)
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 4 of 7
NP16N06YLL
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
40
35
30
25
20
15
10
5
10
1
VGS = 5.0 V
TA = –55°C
–40°C
25°C
VGS = 10 V
75°C
100°C
125°C
150°C
175°C
VGS = 4.5 V
0.1
0.01
0.001
VDS = 10 V
Pulsed
Pulsed
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain to Source Voltage - V
0
1
2
3
4
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.0
1.5
1.0
0.5
0
100
10
1
TA = –55°C
–40°C
25°C
75°C
100°C
125°C
150°C
175°C
VDS = 10 V
VDS = 5 V
Pulsed
I
D = 1 mA
–100 –50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
100
80
60
40
20
0
80
VGS = 10 V
5.0 V
ID = 16 A
8 A
4.5 V
3.2 A
60
40
20
Pulsed
100
Pulsed
0
0.1
1
10
0
5
10
15
20
I
D - Drain Current - A
VGS - Gate to Source Voltage - V
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 5 of 7
NP16N06YLL
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
CHANNEL TEMPERATURE
100
Ciss
80
60
40
20
0
VGS = 10 V
5.0 V
4.5 V
100
Coss
Crss
VGS = 0 V
f = 1 MHz
ID = 8 A
Pulsed
10
–100 –50
0
50
100
150
200
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
VDD = 48 V
30 V
12 V
td(off)
VGS
td(on)
VDD = 30 V
GS = 10 V
RG = 0 Ω
tr
VDS
V
tf
ID = 16 A
12 14
1
0
0.1
1
10
100
0
2
4
6
8
10
ID - Drain Current - A
QG- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
VGS = 10 V
10
VGS = 0 V
1
di/dt = 100 A/μs
V
GS = 0 V
Pulsed
1.0 1.2
0.1
0
0.2
0.4
0.6
0.8
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Drain Current - A
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 6 of 7
NP16N06YLL
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
Renesas package code: PLSN0008KA-A
1
8
7
6
5
2
3
4
0.10 S
6.0 0.2
5.4 0.2
0.73
0.4
1, 2, 3 : Source
: Gate
5, 6, 7, 8: Drain
4
3.18 0.2
0.6 0.15
0.8 0.15
R07DS1124EJ0100 Rev.1.00
Oct 30, 2013
Page 7 of 7
Revision History
NP16N06YLL Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Oct 30, 2013
—
First Edition Issued
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C - 1
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