NP36N055ILE-E1 [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252;型号: | NP36N055ILE-E1 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 |
文件: | 总9页 (文件大小:376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HLE, NP36N055ILE, NP36N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect
PART NUMBER
PACKAGE
Transistor designed for high current switching applications.
NP36N055HLE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
-252 (JEDEC) / MP-3ZK
Note
NP36N055ILE
NP36N055SLE
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A)
• Low Ciss : Ciss = 2900 pF TYP.
• Built-in gate protection diode
Note Not for new de
(TO-251)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pul
5
V
V
A
Gate to Source Voltage
36
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Channel Temperature
±144
1.2
A
W
W
A
120
IAS
36 / 33
12 / 108
175
EAS
mJ
°C
Tch
Storage Temperature
Tstg
–55 to + 175 °C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.25
125
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14156EJ4V0DS00 (4th edition)
The mark
shows major revised points.
Date Published July 2005 NS CP(K)
Printed in Japan
1999, 2005
NP36N055HLE, NP36N055ILE, NP36N055SLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
µA
µA
V
VDS = 55 V, VGS = 0 V
IDSS
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
VGS = 5 V, ID = 18 A
VGS = 4.5 V, ID = 18 A
VDS = 25 V
±10
2.5
IGSS
1.5
11
2
23
Gate to Source Threshold Voltage
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Note
Forward Transfer Admittance
S
Note
10
13
16
mΩ
mΩ
mΩ
pF
pF
pF
ns
Drain to Source On-state Resistance
12
13
18
2900
370
80
22
4400
560
330
48
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS = 0 V
Coss
f = 1 MHz
Crss
VDD = 28 V, ID = 18 A
VGS = 10 V
td(on)
tr
14
36
ns
RG = 1 Ω
69
140
29
Turn-off Delay Time
Fall Time
td(off)
tf
ns
12
ns
VDD = 44 V, VGS = 10 V,
VDD = 44 V
53
80
Total Gate Charge
QG1
nC
nC
nC
nC
V
30
45
QG2
VGS = 5 V
9
Gate to Source Charge
Gate to Drain Charge
QGS
ID = 18 A
15
QGD
VF(S-D)
trr
Note
IF = 3= 0 V
, VGS = 0 V
= 100 A/µs
1.0
42
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
60
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAP
TEST CIRCUIT 2 SWITCHING TIME
D.U.T
L
D.U.T.
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
µ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
VDD
2
Data Sheet D14156EJ4V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 25 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - ˚C
T
C
TC - Cperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. AVALANCHE ENERGY
TING FACTOR
1000
120
10
60
40
20
0
1
I
D(pulse)
DC
100
1 ms
I
D(DC)
Power Dissipation
Limited
IAS = 33 A
36 A
10
1
T
C
= 25˚C
12 mJ
Single Pulse
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS - Drain to Source V
Starting Tch - Starting Channel Temperature - ˚C
Figure5. NT THERMAL RESISTANCE vs. PULSE WIDTH
1000
R
R
th(ch-A) = 125 ˚C/W
100
10
th(ch-C) = 1.25 ˚C/W
1
0.1
0.01
Single Pulse
= 25˚C
T
C
10 µ
1 m
10 m
100 m
1
10
100
1000
100 µ
PW - Pulse Width - s
3
Data Sheet D14156EJ3V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
Pulsed
200
160
120
10
V
GS = 10 V
4.5 V
T
A
= −55˚C
25˚C
5 V
1
0.1
75˚C
150˚C
175˚C
80
40
0
0.01
5
6
1
2
3
4
2
4
3
0
1
VGS - Gate to Source Voltage - V
V
DS - Drain to oltage - V
Figure9. DRAIN TO E ON-STATE RESISTANCE vs.
GATE TCE VOLTAGE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
40
V
DS=10V
Pulsed
Pulsed
35
10
30
15
TA
= 175˚C
75˚C
25˚C
1
0.1
−55˚C
ID = 18 A
10
5
0.01
0.01
0
0.1
1
1
100
0
5
10
15
20
ID - Drain Current
VGS - Gate to Source Voltage - V
Figure10. DRAIN TO SON-STATE
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANRAIN CURRENT
40
35
30
25
20
15
10
5
3.0
Pulsed
V
GµS
ID
D=S =25V0
A
2.5
2.0
1.5
1.0
5 V
V
GS = 4.5 V
10 V
0.5
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D14156EJ4V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
45
40
35
30
25
20
15
10
5
Pulsed
Pulsed
100
10
V
GS = 10 V
V
GS = 0 V
V
GS = 10 V
1
5 V
4.5 V
0.1
0.01
I
D
= 18 A
0
1.0
- Source to Doltage - V
1.5
0
0.5
100
150
0
50
−50
V
SD
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITHARACTERISTICS
1000
100
10000
1000
100
V
GS = 0 V
f = 1 MHz
tf
C
iss
td(off)
td(on)
C
oss
rss
tr
C
10
1
0.1
1
10
100
10
0.1
1
10
ID - Drain Current - A
VDS - Drain to Source Voltage
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Figure16. REVERSE RECOVE vs.
DRAIN CURREN
16
14
12
10
8
80
70
60
50
40
30
20
10
0
1000
100
di/dt = 100 A/µs
GS = 0 V
V
V
DD = 44 V
V
GS
28 V
11 V
6
10
1
4
V
DS
2
I
D
= 36 A
70
0
80
0
10
20 30 40
50 60
0.1
1.0
10
100
QG
- Gate Charge - nC
I
F
- Drain Current - A
5
Data Sheet D14156EJ3V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
2) TO-252 (JEITA) / MP-3Z
2.3 0.2
6.5 0.2
2.3 0.2
6.5 0.2
5.0 0.2
4
0.5 0.1
5.0 0.2
0.5 0.1
4
1
2
3
DESIGN
1
2
3
1.1 0.2
NEW
1.1 0.2
0.9 MAX
0.8 MAX.
+0.2
−0.1
+0.2
0.5
0.5
−0.1
2.3 TYP.
2.3
0.8 TYP.
2.3 TYP.
2.3 TYP.
FOR
1. Gate
2. Drain
3. Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
NOT
4. Fin (Drain)
3) TO-252 (JEDEC) / MP-3ZK
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
EQUIVALENT CIRCUIT
4
Drain
1
2
3
Body
Diode
Gate
No Plat
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
Gate
Protection
Diode
1.0
Source
ain
Source
4. Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14156EJ4V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
•
The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any ms without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibilitny errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, ghts or other intellectual
property rights of third parties by or arising from the use of NEC Electroniucts listed in this document
or any other liability arising from the use of such products. No licepress, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rigEC Electronics or others.
Descriptions of circuits, software and other related information in cument are provided for illustrative
purposes in semiconductor product operation and applicaamples. The incorporation of these
circuits, software and information in the design of a custequipment shall be done under the full
responsibility of the customer. NEC Electronics assumresponsibility for any losses incurred by
customers or third parties arising from the use of these s, software and information.
•
• While NEC Electronics endeavors to enhance the reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possdefects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injluding death) to persons arising from defects in NEC
Electronics products, customers must inte sufficient safety measures in their design, such as
redundancy, fire-containment and anti-faatures.
• NEC Electronics products are classio the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade anly to NEC Electronics products developed based on a customer-
designated "quality assurancam" for a specific application. The recommended applications of an NEC
Electronics product depenquality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics pefore using it in a particular application.
"Standard": Compuce equipment, communications equipment, test and measurement equipment, audio
and vquipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号:
NP36N055ILE-E1-AZ
36A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN
RENESAS
NP36N055ILE-E2-AZ
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN
RENESAS
NP36N055ILE-E2-AZ
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN
NEC
NP36N055SLE-E1-AY
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN
NEC
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