NP50P04SLG-E1-AY [RENESAS]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | NP50P04SLG-E1-AY |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
R07DS0241EJ0100
Rev.1.00
NP50P04SLG
MOS FIELD EFFECT TRANSISTOR
Description
Feb 09, 2011
The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Super low on-state resistance
⎯ RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A)
⎯ RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
Low input capacitance
•
•
Gate to Source ESD protection diode built-in
Ordering Information
Part No.
NP50P04SLG-E1-AY ∗
LEAD PLATING
PACKING
Package
1
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
1
NP50P04SLG-E2-AY ∗
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
−40
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
VDSS
VGSS
ID(DC)
m20
V
m50
A
1
Drain Current (pulse) ∗
ID(pulse)
PT1
m150
84
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.2
Tch
175
Storage Temperature
Single Avalanche Current ∗
Single Avalanche Energy ∗
Tstg
IAS
−55 to +175
37
2
2
EAS
136
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.78
125
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 1 of 6
NP50P04SLG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Symbol
Min
Typ
Max
−1
m10
−2.5
Unit
μA
μA
V
Test Conditions
Zero Gate Voltage Drain Current IDSS
V
V
V
DS = −40 V, VGS = 0 V
GS = m20 V, VDS = 0 V
Gate Leakage Current
IGSS
Gate to Source Threshold
Voltage
Forward Transfer Admittance ∗
VGS(th)
−1.0
−1.4
DS = VGS, I = −250 μA
D
1
| yfs |
RDS(on)1
RDS(on)2
Ciss
12
44
8.2
9.8
3800
740
500
11
S
mΩ
mΩ
pF
pF
pF
ns
V
V
V
V
V
DS = −10 V, I
GS = −10 V, I
D
= −25 A
= −25 A
Drain to Source On-state
9.6
15
D
1
Resistance ∗
GS = −4.5 V, I
DS = −10 V,
GS = 0 V,
D
= −25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
5700
1120
905
24
Coss
Crss
td(on)
tr
f = 1 MHz
V
DD = −20 V, I
GS = −10 V,
D
= −25 A,
V
15
39
ns
Turn-off Delay Time
Fall Time
td(off)
tf
250
150
100
13
505
380
150
ns
R = 0 Ω
G
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
nC
nC
nC
V
V
DD = −32 V,
GS = −10 V,
= −50 A
QGS
QGD
VF(S-D)
trr
V
30
I
I
I
D
F
F
1
Body Diode Forward Voltage ∗
0.96
50
1.5
= −50 A, VGS = 0 V
= −50 A, VGS = 0 V,
Reverse Recovery Time
ns
Reverse Recovery Charge
Note: ∗1. Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2%
Qrr
63
nC
di/dt = −100 A/μs
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS(−)
RL
90%
V
GS
V
GS
10%
VDD
50 Ω
PG.
GS = −20 → 0 V
Wave Form
0
R
G
V
PG.
VDD
VDS(−)
90%
90%
−
BVDSS
IAS
V
DS
V
0
GS(−)
V
DS
10% 10%
VDS
0
Wave Form
I
D
t
d(on)
tr
td(off)
t
f
VDD
τ
ton
toff
τ = 1
μ
s
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG
= −2 mA
RL
PG.
VDD
50 Ω
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 2 of 6
NP50P04SLG
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
I
D(pulse)
PW = 100 μs
1 ms
I
D(DC)
DC
Power Dissipation
Limited
-1
10 ms
T
C
= 25°C
Single Pulse
-0.1
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 125°C/W
Rth(ch-C) = 1.78°C/W
1
0.1
Single Pulse
100 1000
0.01
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 3 of 6
NP50P04SLG
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-200
-180
-160
-1000
-100
V
DS = −10 V
−5.0 V
GS = −10 V
Pulsed
V
-10
-140
-120
-100
-80
-60
-40
-20
-0
-1
−4.5 V
100°C
125°C
T
ch = −55°C
−25°C
-0.1
150°C
175°C
-0.01
-0.001
-0.0001
25°C
Pulsed
75°C
0
-1
-2
-3
-4
0
-0.5 -1
-1.5
-2
-2.5 -3
-3.5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1.8
100
V
DS = −10 V
T
ch = −55°C
-1.6
-1.4
-1.2
-1
Pulsed
10
1
−25°C
25°C
0.1
75°C
-0.8
-0.6
-0.4
-0.2
0
100°C
0.01
0.001
0.0001
125°C
150°C
175°C
Pulsed
DS = VGS
V
I
D
= −250 μA
0.0001 0.001
0.01
0.1
1
10
100
-75
-25
25
75
125
175
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
18
16
14
40
35
−25 A
30
I
D
= −50 A
−4.5 V
25
20
15
10
5
12
10
−5.0 V
8
6
V
GS = −10 V
Pulsed
-1000
4
2
0
−10 A
Pulsed
-20 -25
0
-1
-10
-100
0
-5
-10
-15
ID - Drain Current - A
VGS - Gate to Source Voltage - V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 4 of 6
NP50P04SLG
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20.0
10.00
18.0
16.0
14.0
12.0
10.0
8.0
C
iss
Coss
VGS = −4.5 V
1.00
0.10
−10 V
C
rss
6.0
4.0
I = −25 A
D
VGS = 0 V
f = 1 MHz
2.0
Pulsed
0.0
-75
-25
25
75
125
175
-0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-35
-30
-25
-20
-15
-10
-5
-15
1000
100
10
V
DS
t
d(off)
V
DD = −32 V
t
r
-10
-5
0
−20 V
−8 V
t
f
t
d(on)
V
V
R
DD = −20 V
GS = −10 V
= 0 Ω
D
I = −50 A
G
0
1
0
10 20 30 40 50 60 70 80 90 100
QG - Gate Charge - nC
-0.01
-0.1
-1
-10
-100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-1000
1000
V
GS = −10 V
-100
-10
100
10
1
−4.5 V
−5.0 V
-1
-0.1
0 V
-0.01
-0.001
-0.0001
V
GS = 0 V
Pulsed
1.2 1.4
F(S-D) - Source to Drain Voltage - V
di/dt = −100 A/μs
0
0.2 0.4 0.6 0.8
1
-0.1
-1
-10
-100
V
IF - Diode Forward Current - A
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 5 of 6
NP50P04SLG
Chapter Title
Package Drawings (Unit: mm)
TO-252 (MP-3ZK)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 6 of 6
Revision History
NP50P04SLG Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Feb 09, 2011
−
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0
相关型号：
NP50P06SDG-E1-AY
Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN
NEC
NP50P06SDG-E2-AY
Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN
NEC
NP52N055SUG
Power Field-Effect Transistor, 52A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN
NEC
©2020 ICPDF网 联系我们和版权申明