NP60N06VLK-E1-AY [RENESAS]
60 V - 60 A - N-channel Power MOS FET;
| 型号： | NP60N06VLK-E1-AY |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 60 V - 60 A - N-channel Power MOS FET |
| 文件： | 总8页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RBA160N04AHPF-4UA01
Data Sheet
RBA160N04AHPF-4UA01
40V – 160A – N-channel Power MOS FET
Application : Automotive
R07DS1344EJ0200
Rev.2.00
Jul. 8, 2020
Description
The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching
applications.
Features
•
Super low on-state resistance
RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A )
Low input capacitance
•
Ciss = 8800pF TYP. ( VDS = 25 V )
•
•
Designed for automotive application and AEC-Q101 qualified
Pb-free (This product does not contain Pb in the external electrode)
Ordering Information
Part No.
Quantity
800pcs/reel
Shipping container
RBA160N04AHPF-4UA01#GB0
Taping
Outline
8
1. Gate
2. Drain
3, 4, 5, 6, 7. Source
8. Drain (Fin)
1 2 3 4 5 6 7
TO-263-7pin-SHL* (MP-25ZU)
* Short Head & Lead
Equivalent circuit
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide
and ultimately degrade the device operation. Steps must be taken to stop generation of
static electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 1 of 7
RBA160N04AHPF-4UA01
Absolute Maximum Ratings
(TA=25°C)
Item
Symbol
Ratings
40
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25 °C)
VDSS
VGSS
ID(DC)
±20
V
±160
±640
250
A
Note1
Drain Current (pulse)
ID(pulse)
PT1
A
Total Power Dissipation (TC = 25 °C)
Total Power Dissipation (TA = 25 °C)
Channel Temperature
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
IAR
-55 to 175
55
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
EAR
303
mJ
Note 1. PW 10 s, Duty Cycle 1%
2. VGS = 20 → 0V , RG = 25
3. L = 100H , VDD = 20V , VGS = 20 → 0V, RG = 25
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
Electrical Characteristics
(TA=25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Drain to Source On-state Resistance
Input Capacitance
Symbol
IDSS
IGSS
Min
Typ
Max
1
Unit
A
nA
V
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 80 A
VDS = 25 V
±100
4.0
VGS(th)
2.0
3.0
1.05
8800
980
530
32
Note4
RDS(on)
1.25
13200
1470
960
64
m
pF
pF
pF
ns
Note5
Ciss
Coss
Crss
td(on)
Note5
VGS = 0 V
Output Capacitance
Note5
Note5
f = 1 MHz
Reverse Transfer Capacitance
Turn-on Delay Time
VDD = 20 V, ID = 80 A
VGS = 10 V
Note5
Rise Time
tr
22
53
ns
Note5
RG = 0
Turn-off Delay Time
td(off)
97
194
53
ns
Note5
Fall Time
tf
22
ns
Note5
Note5
Note5
Note4
Total Gate Charge
QG
157
37
236
nC
nC
nC
V
VDD = 32 V
VGS = 10 V
ID = 160 A
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note 4. Pulse test
QGS
QGD
40
VF(S-D)
0.9
71
1.5
IF = 160 A, VGS = 0 V
IF = 160 A, VGS = 0 V
di/dt = 100 A/s
Note5
trr
ns
Note5
Qrr
92
nC
Note 5. Refer value
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 2 of 7
RBA160N04AHPF-4UA01
Test Circuit
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 3 of 7
RBA160N04AHPF-4UA01
Typical Characteristics (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - ℃
TC - Case Temperature - ℃
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) = 640A
1000
RDS(on) Limited
(VGS=10V)
ID(DC)=160A
100
10
1
Power Dissipation Limited
Secondary Breakdown Limited
TC=25℃
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THREMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 83.3℃/W
100
10
Rth(ch-C) = 0.60℃/W
1
0.1
0.01
Single pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 4 of 7
RBA160N04AHPF-4UA01
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
700
600
500
400
300
200
100
0
1000
100
10
TA=175℃
25℃
-40℃
1
0.1
0.01
0.001
VDS=10V
Pulsed
VGS=10V
Pulsed
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
2.5
5
2
1.5
1
4
3
2
1
0
0.5
0
VDS = VGS
VGS=10V
Pulsed
ID=250μA
-50
0
50
100
150
200
1
10
100
1000
Tch - Channel Temperature - ℃
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATERESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.5
2.5
2
1.5
1
2
1.5
1
VGS=10V
ID=80A
Pulsed
0.5
0
0.5
0
ID=80A
Pulsed
-50
0
50
100
150
200
0
5
10
15
20
Tch - Channel Temperature - ℃
VGS-GATE to Source Voltage-V
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 5 of 7
RBA160N04AHPF-4UA01
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
40
30
20
10
0
10
8
VDD = 32V
20V
8V
10000
1000
100
Ciss
6
VGS
4
Coss
Crss
2
VGS=0V
f=1MHz
VDS
ID=160A
150
QG - Gate Charge - nC
0
0
50
100
200
0.1
1
10
100
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS=0V
VGS=10V
100
10
1
Pulsed
0.1
0.0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 6 of 7
RBA160N04AHPF-4UA01
Package Dimensions
R07DS1344EJ0200 Rev.2.00
Jul 8, 2020
Page 7 of 7
Notice
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