NP80N055PDG-E1B-AY [RENESAS]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | NP80N055PDG-E1B-AY |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总12页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed
for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N055MDG-S18-AY
NP80N055NDG-S18-AY
NP80N055PDG-E1B-AY
NP80N055PDG-E2B-AY
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
Note
Note
Note
Note
Tube
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
50 p/tube
Tape
TO-263 (MP-25ZP) typ. 1.5 g
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-220)
• Logic level
• Super low on-state resistance
- NP80N055MDG, NP80N055NDG
RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N055PDG
(TO-262)
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = 80 A
• Low input capacitance
Ciss = 4600 pF TYP.
(TO-263)
• Designed for automotive application and AEC-Q101 qualified
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19796EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
NP80N055MDG, NP80N055NDG, NP80N055PDG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
55
20
V
V
80
A
200
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
115
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
33
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
IAR
EAR
111
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.30
83.3
°C/W
°C/W
Rth(ch-A)
2
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 55 V, VGS = 0 V
MIN.
TYP.
MAX.
1
UNIT
μA
nA
IGSS
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
100
2.5
Gate to Source Threshold Voltage
VGS(th)
1.4
25
V
Note
Forward Transfer Admittance
| yfs |
64
S
Note
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
5.4
6.9
6.6
mΩ
NP80N055MDG, NP80N055NDG
VGS = 10 V, ID = 40 A
NP80N055PDG
4.8
6.3
5.9
mΩ
mΩ
mΩ
RDS(on)2
VGS = 4.5 V, ID = 35 A
11.2
10.9
NP80N055MDG, NP80N055NDG
VGS = 4.5 V, ID = 35 A
NP80N055PDG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
VDS = 25 V,
VGS = 0 V,
4600
390
240
17
6900
590
430
37
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
VDD = 28 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
tr
13
33
Turn-off Delay Time
td(off)
77
154
18
Fall Time
tf
7
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VF(S-D)
trr
VDD = 44 V,
90
135
VGS = 10 V,
13
ID = 80 A
26
Note
Body Diode Forward Voltage
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
0.95
38
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
ns
nC
Qrr
45
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
IAS
V
DS
I
D
τ
t
d(on)
t
r
td(off)
t
f
V
DD
ton
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
R
L
50 Ω
PG.
V
DD
3
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
125
100
75
50
25
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
DC
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 1.30°C/W
1
0.1
0.01
Single Pulse
100 1000
1 m
10 m
100 m
1
10
PW - Pulse Width - s
4
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
150
100
50
200
150
100
50
10 V
10 V
V
GS = 4.5 V
VGS = 4.5 V
Pulsed
NP80N055MDG, NP80N055NDG
Pulsed
NP80N055PDG
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
1000
100
3
2
1
T
ch = −55°C
−25°C
25°C
10
1
75°C
125°C
150°C
175°C
0.1
0.01
0.001
0.0001
V
DS = 10 V
VDS = VGS
Pulsed
I
D
= 250 μA
0
0
1
2
3
4
-75
-25
25
75
125
175
225
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
T
ch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
V
DS = 5 V
Pulsed
0.1
1
10
100
ID - Drain Current - A
5
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
12
10
8
10
8
VGS = 4.5 V
VGS = 4.5 V
6
6
10 V
10 V
4
4
2
2
Pulsed
NP80N055PDG
Pulsed
NP80N055MDG, NP80N055NDG
0
0
1
10
100
1000
1
10
100
1000
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
20
ID = 40 A
ID = 40 A
Pulsed
Pulsed
16
16
12
8
12
8
4
4
NP80N055MDG, NP80N055NDG
0
NP80N055PDG
0
0
4
8
12
16
20
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
14
12
16
14
12
V
GS = 4.5 V, I = 35 A
D
V
GS = 4.5 V, I = 35 A
D
10
8
10
8
10 V, 40 A
10 V, 40 A
6
6
4
4
Pulsed
NP80N055MDG, NP80N055NDG
Pulsed
NP80N055PDG
2
2
0
0
-75
-25
25
75
125
175
225
-75
-25
25
75
125
175
225
Tch - Channel Temperature - °C
Tch - Channel Temperature - °C
6
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100000
10000
1000
1000
100
10
t
t
d(off)
d(on)
C
iss
C
oss
t
r
V
V
DD = 28 V
GS = 10 V
t
f
VGS = 0 V
C
rss
f = 1 MHz
RG = 0 Ω
100
1
0.01
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
60
12
10
8
50
40
30
20
10
0
V
DD = 44 V
28 V
100
10
10 V
4.5 V
11 V
VGS = 0 V
6
1
V
GS
4
0.1
0.01
2
V
DS
D
I = 80 A
Pulsed
0
0
20
40
60
80
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/
μ
s
V
GS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
7
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K)
TO-262 (MP-25SK)
φ
3.8 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4
4
1
2
3
1
2
3
1.27 0.2
0.8 0.1
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
0.5 0.2
2.5 0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
2.54 TYP.
1. Gate
2. Drain
3. Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4. Fin (Drain)
TO-263 (MP-25ZP)
EQUIVALENT CIRCUIT
Drain
10.0 0.3
7.88 MIN.
4
4.45 0.2
No plating
1.3 0.2
Body
Diode
Gate
0.025
to 0.25
0.5
Source
0.75 0.2
2.54
0.25
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
8
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
TAPE INFORMATION (NP80N055PDG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
−E1B TYPE
−E2B TYPE
MARKING INFORMATION
NEC
80N055
DG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Soldering Conditions
Condition Symbol
IR60-00-3
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
NP80N055PDG
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
NP80N055MDG,
NP80N055NDG
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
THDWS
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
NP80N055MDG,
NP80N055NDG,
NP80N055PDG
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet D19796EJ1V0DS
NP80N055MDG, NP80N055NDG, NP80N055PDG
•
The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
相关型号：
NP80N06ELC
80A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
RENESAS
NP80N06ELD
80A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN
RENESAS
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