NP82N03PUG-AZ [RENESAS]
82A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZP, 3 PIN;
| 型号： | NP82N03PUG-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 82A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZP, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N03PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N03PUG is N-channel MOS Field Effect
ORDERING INFORMATION
PART NUMBER
PACKAGE
Transistor designed for high current switching applications.
NP82N03PUG
TO-263 (MP-25ZP)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 6050 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
±20
V
V
±82
A
±328
1.8
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
143
Tch
175
Storage Temperature
Tstg
−55 to +175
47
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
IAR
EAR
221
mJ
2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.05
83.3
°C/W
°C/W
Channel to Ambient Thermal Resistance Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16857EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
NP82N03PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
1.0
UNIT
µA
nA
V
IDSS
VDS = 30 V, VGS = 0 V
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
VDS = 25 V
100
4.0
Note
Gate to Source Threshold Voltage
2.0
19
3.0
39
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
Input Capacitance
2.1
6050
700
480
39
2.8
9080
1050
870
90
mΩ
pF
pF
pF
ns
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 15 V, ID = 41 A
VGS = 10 V
122
70
310
140
40
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
ns
15
ns
Total Gate Charge
QG
VDD = 24 V
106
28
160
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 82 A
39
Note
Body Diode Forward Voltage
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V
di/dt = 100 A/µs
0.9
44
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
Qrr
41
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
ID
τ
t
d(on)
t
r
t
d(off)
t
f
VDD
t
on
t
off
τ = 1
µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
2
Data Sheet D16857EJ1V0DS
NP82N03PUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
150
125
100
75
50
25
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse) = 328 A
100 µs
1 ms
I
D(DC) = 82 A
10 ms
DC
R
DS(on) Limited
(at VGS = 10 V)
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
R
th(ch-A) = 83.3°C/W
1
R
th(ch-C) = 1.05°C/W
0.1
0.01
Single pulse
100 1000
10 µ
100 µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D16857EJ1V0DS
NP82N03PUG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
350
300
250
200
150
100
50
1000
100
10
Pulsed
V
DS = 10 V
Pulsed
TA
= 175°C
150°C
125°C
75°C
V
GS = 10 V
1
−55°C
−25°C
0.1
25°C
0.01
0.001
0
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
7
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3
100
10
1
V
DS = 10 V
TA = −55°C
Pulsed
25°C
85°C
125°C
175°C
2.5
2
1.5
1
V
DS = VGS
0.5
ID = 250 µA
0
0.1
-100 -50
0
50
100 150 200
0.1
1
10
100
1000
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
10
9
Pulsed
Pulsed
3.5
3
I
D
= 82 A
41 A
16.4 A
8
7
6
5
4
3
2
1
0
2.5
V
GS = 10 V
2
1.5
1
0.5
0
0
4
8
12
16
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16857EJ1V0DS
NP82N03PUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
4.5
4
3.5
3
2.5
2
1.5
10000
1000
100
C
iss
C
oss
rss
C
V
GS = 10 V
1
0.5
0
I
D = 41 A
V
GS = 0 V
Pulsed
f = 1 MHz
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
25
10
VDD = 24 V
15 V
9
8
7
6
5
4
3
2
1
0
VGS
20
15
10
5
t
d(off)
t
r
t
d(on)
VDD = 6 V
ID = 71 A
t
f
V
V
DD = 15 V
GS = 10 V
VDS
RG = 0 Ω
ID = 82 A
0
1
0
20
40
60
80
100
120
0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
100
V
GS = 10 V
0 V
1
0.1
0.01
di/dt = 100 A/
µs
V
GS = 0 V
Pulsed
10
1
10
100
1000
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D16857EJ1V0DS
NP82N03PUG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 0.ꢀ
4.45 0.2
1.ꢀ 0.2
No plating
7.88 MIN.
4
0.025 to
0.25
0.5
0.75 0.2
2.54
0.25
1
2
ꢀ
1.Gate
2.Drain
ꢀ.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D16857EJ1V0DS
NP82N03PUG
•
The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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M8E 02. 11-1
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