NR8501FR-BB [RENESAS]
AVALANCHE-TYPE PHOTODIODE,800MA/W RESPONSIVITY,CANC;
| 型号： | NR8501FR-BB |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | AVALANCHE-TYPE PHOTODIODE,800MA/W RESPONSIVITY,CANC 局域网 |
| 文件： | 总12页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
PHOTO DIODE
NR8501 Series
φ50 µm InGaAs APD COAXIAL MODULE
FOR 2.5 Gb/s FIBEROPTIC COMMUNICATIONS
DESCRIPTION
The NR8501 Series is an InGaAs avalanche photo diode (APD) coaxial module optical fiber pigtail. This module is
designed for long wavelength 2.5 Gb/s optical communication systems and ideal as a receiver for Synchronous
Digital Hierarchy (SDH) system, STM-16, ITU-T recommendations.
FEATURES
•
•
•
Small dark current
High speed response
High sensitivity
ID = 7 nA
fC = 2.5 GHz MIN. @ M = 5
S = 0.94 A/W @ λ = 1 310 nm, M = 1
S = 0.96 A/W @ λ = 1 550 nm, M = 1
•
•
Coaxial module with SMF or GI-50 fiber
With SC connector : standard, FC connector : option
(Refer to ORDERING INFORMATION)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10159EJ01V0DS (1st edition)
(Previous No. P15336EJ2V0DS00)
Date Published May 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
NEC Corporation 2001
NEC Compound Semiconductor Devices 2002
NR8501 Series
PACKAGE DIMENSIONS (UNIT: mm)
FP/FR
CP/CR
Optical Fiber
Optical Fiber
φ
0.9
φ
0.9
Length: 1 m MIN.
Length: 1 m MIN.
φ
3.2±0.2
φ
3.2±0.2
φ
5.0±0.2
φ
5.0±0.2
φ
7.0±0.2
φ
7.0±0.2
φ
2.2
φ
0.45±0.05
φ
0.45±0.05
12.7±0.2
17.0±0.2
16.0±0.2
PIN CONNECTIONS
P.C.D. = φ2.0
PIN CONNECTIONS
3
3
P.C.D. = φ2.0
2
1
2
1
–
4 R1.25±0.2
3
3
1. Anode (Negative)
2. Cathode (Positive)
3. Case
1. Anode (Negative)
2. Cathode (Positive)
3. Case
1
2
1
2
8.5±0.2
–
2
2.5
φ
12.0±0.1
OPTICAL FIBER CHARACTERISTICS
Parameter
Specification
GI-50 Fiber
Unit
SMF
Mode Field Diameter
Core Diameter
9.5±1
−
50±3
125±2
2
µm
µm
µm
%
−
125±2
2
Cladding Diameter
Maximum Cladding Noncircularity
Maximum Core/Cladding Concentricity
Outer Diameter
1.6
4.0
%
0.9±0.1
1 100 to 1 270
30
0.9±0.1
−
mm
nm
mm
mm
Cut-off Wavelength
Minimum Fiber Bending Radius
Fiber Length
30
1 000 MIN.
1 000 MIN.
Flammability
UL1581 VW-1
35±2 mm
Connector
Fiber Length: 1 000 mm MIN.
2
Data Sheet PL10159EJ01V0DS
NR8501 Series
ORDERING INFORMATION
Part Number
NR8501FP-BC
NR8501FP-CC
NR8501FR-BB
NR8501FR-CB
NR8501CP-BC
NR8501CP-CC
NR8501CR-BB
NR8501CR-CB
Flange Type
Fiber Type
SMF
Available Connector*1
With FC-UPC Connector
With SC-UPC Connector
With FC-SPC Connector
With SC-SPC Connector
With FC-UPC Connector
With SC-UPC Connector
With FC-SPC Connector
With SC-SPC Connector
Flat Mount Flange
GI-50 Fiber
SMF
Vertical Mount Flange
GI-50 Fiber
*1 SC Connector : standard
FC Connector : option
ABSOLUTE MAXIMUM RATINGS
Parameter
Forward Current
Symbol
Ratings
Unit
mA
mA
°C
IF
10
1.0
Reverse Current
IR
Operating Case Temperature
Storage Temperature
TC
−40 to +85
−40 to +85
260 (10 sec.)
85
Tstg
Tsld
RH
°C
Lead Soldering Temperature
Relative Humidity (noncondensing)
°C
%
3
Data Sheet PL10159EJ01V0DS
NR8501 Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
VBR
Conditions
MIN.
40
TYP.
60
MAX.
80
Unit
V
Reverse Breakdown Voltage
ID = 100 µA
Temperature Coefficient of
Reverse Breakdown Voltage
δ*1
0.2
%/°C
Dark Current
ID
IDM
Ct
fC
VR = VBR × 0.9
M = 2 to 10
7
30
5
nA
nA
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
1
VR = VBR × 0.9, f = 1 MHz
M = 5
0.5
3.0
3.0
1.2
0.94
0.96
40
0.75
pF
2.5
2.5
1.0
0.8
0.81
30
GHz
M = 10
M = 30
Sensitivity
S
λ = 1 310 nm, M = 1
λ = 1 550 nm, M = 1
λ = 1 310 nm, Ipo = 1.0 µA,
VR = V (@ ID = 1 µA)
λ
A/W
Multiplication Factor
Excess Noise Factor*2
Optical Return Loss
M
x
F
= 1 310 nm, 1 550 nm, Ipo = 1.0 µA,
0.7
5
M = 10, f = 35 MHz, B = 1 MHz
SMF
ORL
30
28
dB
GI-50 Fiber
VBR (25°C + ∆T°C) − VBR (25°C)
∆T°C · VBR (25°C)
*1 δ =
*2 F = MX
4
Data Sheet PL10159EJ01V0DS
NR8501 Series
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
100
80
60
40
20
0
100
50
η
20
10
5
2
1
2
5
10
20
(V)
50
100
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength λ ( m)
µ
Reverse Voltage V
R
DARK CURRENT AND PHOTO CURRENT
vs. REVERSE VOLTAGE
DARK CURRENT vs. REVERSE VOLTAGE
102
10
1
10–4
10–5
10–6
10–7
10–8
10–9
10–10
10–11
10–12
10–5
λ = 1 310 nm,
10–6
10–7
10–8
I
po = 1.0 A
µ
I
ph
C
°
10–9
10–10
10–11
10–12
+60
C
°
0
0
20
40
60
(V)
80
Reverse Voltage V
R
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
50
1 310 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
I
D
K
0.5
0.4
20
10
5
2
1
0
20
40
60
(V)
2
5
10
20
50
100
80
Reverse Voltage V
R
Multiplication Factor M
5
Data Sheet PL10159EJ01V0DS
NR8501 Series
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
10
1
0.1
1
10
100
Multiplication Factor M
Remark The graphs indicate nominal characteristics.
6
Data Sheet PL10159EJ01V0DS
NR8501 Series
InGaAs APD/PD FAMILY
Absolute Maximum Ratings
Electro-Optical Characteristics (TC = 25°C)
TC
Tstg
Detect-
ing Area
Size
ID
fC
S
VR
Part Number
(°C)
(°C)
(nA)
(GHz) (A/W)
(V)
Applications
Package
@λ
(µm)
TYP.
MIN.
2.5*1
TYP.
0.94
0.96
0.89
0.94
0.89
0.94
0.94
0.96
0.94
0.96
(nm)
NR4500BP-CC
NR4500CP-CC
NR7500 Series
0 to +85
−40 to +85
−40 to +85
−40 to +85
−40 to +85
−40 to +85
φ50
φ50
φ80
φ50
φ50
−
1 310 0.9VBR 2.5 Gb/s:
Coaxial APD with
an Internal pre-amp
Coaxial PD
1 550
1 310
1 550
1 310
1 550
STM-16
2.5 Gb/s:
STM-16
−40 to +85
−40 to +85
−40 to +85
−40 to +85
0.1
0.1
7
2.5
2.5
1
5
5
NR7800 Series
NR8500 Series
NR8501 Series
≤ 622 Mb/s: Coaxial PD
STM-4, STM-1
1 310 0.9VBR ≤ 622 Mb/s: Coaxial APD
1 550
1 310 0.9VBR 2.5 Gb/s:
1 550 STM-16
STM-4, STM-1
7
2.5
Coaxial APD
*1 PLow and PHigh are specified at 2.5 Gb/s
7
Data Sheet PL10159EJ01V0DS
NR8501 Series
REFERENCE
Document Name
Document No.
P12480E
P13623E
P12944X
C11159E
C11531E
X13769E
Optical semiconducrtor devices for fiberoptic communications Selection Guide
Opto-Electronics Devices Pamphlet
Opto-Electronics Devices (CD-ROM)
NEC semiconductor device reliability/quality control system*1
Quality grades on NEC semiconductor devices*1
SEMICONDUCTOR SELECTION GUIDE −Products and Packages−*1
*1 Published by NEC Corporation
8
Data Sheet PL10159EJ01V0DS
NR8501 Series
•
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
9
Data Sheet PL10159EJ01V0DS
NR8501 Series
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
A glass-fiber is attached on the product. Handle with care.
Caution Optical Fiber
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
FAX: +852-3107-7309
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-528-0301
FAX: +82-2-528-0302
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0110
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