NV4V31SF [RENESAS]
Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source; 蓝紫色激光二极管405nm的蓝紫色激光光源
| 型号： | NV4V31SF |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source |
| 文件： | 总9页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NV4V31SF
Blue-Violet Laser Diode
R08DS0070EJ0100
Rev.1.00
405 nm Blue-Violet Laser Light Source
Jun 20, 2013
DESCRIPTION
The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW). The NV4V31SF can provide excellent linearity from low to
high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
•
High optical output power
Peak wavelength
Single transverse mode (lateral)
Wide operating temperature range
φ 5.6 mm CAN package
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
APPLICATIONS
•
Blue-violet laser light source
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 1 of 7
NV4V31SF
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
<R>
X
90° 2°
CAP GLASS
Y
0.4 0.1
φ
5.6 0.1
φ
φ
4.5 MAX.
LD CHIP
0.5 MIN.
3.55 0.1
Z
STEM
REFERENCE
PLAIN
3– 0.45 0.1
φ
P.C.D.
2.0 0.2
φ
1
1
3
LD
3 (Stem GND)
2
2
PIN CONNECTIONS
BOTTOM VIEW
Remark Cap glass thickness
: 0.25 0.03 mm
Cap glass refractive index : 1.53 ( = 405 nm)
λ
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 2 of 7
NV4V31SF
Chapter Title
<R>
ORDERING INFORMATION
Part Number Order Number
NV4V31SF NV4V31SF-A
Rank
Packing Style
HV
XV
Tray Packing (100 p/Tray), With data
Individual Packing (for samples), With data
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
Po
Ratings
210
Unit
mW
V
Optical Output Power (CW)
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
VR
2
TC
−5 to +85
−40 to +85
°C
°C
Tstg
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter
Symbol
MAX.
Unit
Optical Output Power (CW)
Po
175
mW
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter
Threshold Current
Symbol
Ith
Conditions
MIN.
TYP.
35
MAX.
Unit
mA
mA
V
CW
55
200
6.5
Operating Current
Iop
CW, Po = 175 mW
150
5.0
1.55
405
9
Operating Voltage
Vop
ηd
λp
θ//
θ⊥
CW, Po = 175 mW
Slope Efficiency
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
1.1
400
6
W/A
nm
Peak Wavelength
410
12
25
3
Beam Divergence (lateral)
Beam Divergence (vertical)
Position Accuracy Angle (lateral)
Position Accuracy Angle (vertical)
deg.
CW, Po = 175 mW
CW, Po = 175 mW
15
−3
−3
20
Δθ//
Δθ⊥
0
deg.
0
3
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 3 of 7
NV4V31SF
Chapter Title
TYPICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified
)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
200
FORWARD VOLTAGE vs.
FORWARD CURRENT
10
ꢀ
20°C
60°C
70°C
ꢀ0°C
90°C
1ꢀ0
160
140
25°C
30°C
40°C
50°C
20°C
25°C
30°C
40°C
50°C
60°C
70°C
ꢀ0°C
90°C
120
100
ꢀ0
60
40
20
0
6
4
2
0
0
50
100
150
(mA)
200
0
50
100
150
(mA)
200
Forward Current I
F
Forward Current I
F
POWER DEPENDENCE OF
PEAK WAVELENGTH
TEMPERATURE DEPENDENCE OF
PEAK WAVELENGTH
410
40ꢀ
406
404
402
400
412
410
40ꢀ
406
404
402
400
175 mW
N = 5
N = 5
0.011 nm/mW
0.064 nm/°C
0
50
100
150
200
0
20
40
60
ꢀ0
100
Optical Output Power P
O
(mW)
Temperature (°C)
FFP (LATERAL)
FFP (VERTICAL)
175 mW
120 mW
ꢀ0 mW
40 mW
175 mW
120 mW
ꢀ0 mW
40 mW
−30
−20
−10
0
10
20
30
−30
−20
−10
0
10
20
30
Angle (degrees)
Angle (degrees)
Remark The graphs indicate nominal characteristics.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 4 of 7
NV4V31SF
Chapter Title
Wavelength Spectrum (100 mW)
Wavelength Spectrum (175 mW)
1.2
1
1.2
1
0.ꢀ
0.6
0.4
0.2
0.ꢀ
0.6
0.4
0.2
0
0
400
402
404
406
40ꢀ
410
400
402
404
406
40ꢀ
410
Wavelength λ (nm)
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 5 of 7
NV4V31SF
Chapter Title
NOTES ON HANDLING
1. Recommended soldering conditions
•
•
•
•
Peak Temperature
Time
≤ 350°C
≤ 3 seconds
Soldering of leads should be made at the point 2.0 mm from the root of the lead
This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
•
Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
•
•
Make sure that the work table and soldering iron are grounded.
Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N or less.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the stem base of the lead.
(3) Do not allow the cap glass of the package to become scratched or dirty.
Also, do not subject the cap glass to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the bag.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 6 of 7
NV4V31SF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
VISIBLE LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
Warning Laser Beam
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 7 of 7
Revision History
NV4V31SF Data Sheet
Description
Summary
Rev.
Date
Page
−
p.2
p.3
0.01
1.00
Jan 23, 2013
Jun 20, 2013
First edition issued
Modification of PACKAGE DIMENSIONS
Modification of ORDERING INFORMATION
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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Refer to "http://www.renesas.com/" for the latest and detailed information.
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