NX8562LB279-BA [RENESAS]
LASER DIODE W/MONITOR,1.528UM PEAK WAVELENGTH,MODULE-BFVAR;
| 型号： | NX8562LB279-BA |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | LASER DIODE W/MONITOR,1.528UM PEAK WAVELENGTH,MODULE-BFVAR 监视器 光电 半导体 |
| 文件： | 总12页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
LASER DIODE
NX8562LB
1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE
CW LIGHT SOURCE FOR DWDM APPLICATIONS
DESCRIPTION
The NX8562LB is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
module with Polarization Maintain Fiber (PMF).
It is designed as Continuous Wave (CW) light source and ideal for optical transmission systems with external
modulators. The device is available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on
ITU-T recommendations, enabling a wide range of applications.
FEATURES
•
•
Output power
Pf = 20 mW MIN.
Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, refer to the ORDERING INFORMATION)
Internal thermo-electric cooler and isolator
•
•
•
Hermetically sealed 14-pin butterfly package
Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13824EJ4V0DS00 (4th edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark • shows major revised points.
1998, 2001
©
NX8562LB
PACKAGE DIMENSIONS (UNIT: mm)
15.24
2.54
TOP VIEW
4– 2.67
φ
#7
#1
22.3
–
+
7
8
1
L
Cooler PD
Thermistor
14
LD
R
#8
#14
0.5
20.83±0.13
26.04±0.13
PIN CONNECTIONS
Optical Fiber (PMF)
Length: 1.5 m MIN.
Function
Function
Thermistor
Thermistor
Bias
PD Anode
PD Cathode
Cooler Anode
Cooler Cathode
Pin No.
Pin No.
1
2
3
4
5
6
7
8
9
GND
GND
GND
10
11
12
13
14
GND, LD Anode
Signal Input
GND
29.97±0.25
GND
2
Data Sheet P13824EJ4V0DS
NX8562LB
OPTICAL FIBER DIMENSIONS (UNIT: mm)
1 500 MIN.
φ
900 µm Nylon pipe
PMF
φ
400
µ
m Tight buffer PANDA fiber
-BA: FC-PC connector
-CA: SC-PC connector
1 450 MIN.
10
Nylon pipe
Cave
Primary coat
m core
Minimum fiber bending radius: 30 mm
9
φ µ
125
400
500
900
µ
( m)
3
Data Sheet P13824EJ4V0DS
NX8562LB
ORDERING INFORMATION
Part Number
ITU-T Wavelength*1
(nm)
Frequency
(THz)
Without Connector
NX8562LB279
NX8562LB287
NX8562LB295
NX8562LB303
NX8562LB311
NX8562LB318
NX8562LB326
NX8562LB334
NX8562LB342
NX8562LB350
NX8562LB358
NX8562LB366
NX8562LB373
NX8562LB381
NX8562LB389
NX8562LB397
NX8562LB405
NX8562LB413
NX8562LB421
NX8562LB429
NX8562LB437
NX8562LB445
NX8562LB453
NX8562LB461
NX8562LB469
NX8562LB477
NX8562LB485
NX8562LB493
NX8562LB501
NX8562LB509
NX8562LB517
NX8562LB525
NX8562LB533
NX8562LB541
With FC-PC Connector
NX8562LB279-BA
NX8562LB287-BA
NX8562LB295-BA
NX8562LB303-BA
NX8562LB311-BA
NX8562LB318-BA
NX8562LB326-BA
NX8562LB334-BA
NX8562LB342-BA
NX8562LB350-BA
NX8562LB358-BA
NX8562LB366-BA
NX8562LB373-BA
NX8562LB381-BA
NX8562LB389-BA
NX8562LB397-BA
NX8562LB405-BA
NX8562LB413-BA
NX8562LB421-BA
NX8562LB429-BA
NX8562LB437-BA
NX8562LB445-BA
NX8562LB453-BA
NX8562LB461-BA
NX8562LB469-BA
NX8562LB477-BA
NX8562LB485-BA
NX8562LB493-BA
NX8562LB501-BA
NX8562LB509-BA
NX8562LB517-BA
NX8562LB525-BA
NX8562LB533-BA
NX8562LB541-BA
With SC-PC Connector
NX8562LB279-CA
NX8562LB287-CA
NX8562LB295-CA
NX8562LB303-CA
NX8562LB311-CA
NX8562LB318-CA
NX8562LB326-CA
NX8562LB334-CA
NX8562LB342-CA
NX8562LB350-CA
NX8562LB358-CA
NX8562LB366-CA
NX8562LB373-CA
NX8562LB381-CA
NX8562LB389-CA
NX8562LB397-CA
NX8562LB405-CA
NX8562LB413-CA
NX8562LB421-CA
NX8562LB429-CA
NX8562LB437-CA
NX8562LB445-CA
NX8562LB453-CA
NX8562LB461-CA
NX8562LB469-CA
NX8562LB477-CA
NX8562LB485-CA
NX8562LB493-CA
NX8562LB501-CA
NX8562LB509-CA
NX8562LB517-CA
NX8562LB525-CA
NX8562LB533-CA
NX8562LB541-CA
1527.99
1528.77
1529.55
1530.33
1531.11
1531.89
1532.68
1533.46
1534.25
1535.03
1535.82
1536.60
1537.39
1538.18
1538.97
1539.76
1540.55
1541.34
1542.14
1542.93
1543.73
1544.52
1545.32
1546.11
1546.91
1547.71
1548.51
1549.31
1550.11
1550.91
1551.72
1552.52
1553.32
1554.13
196.20
196.10
196.00
195.90
195.80
195.70
195.60
195.50
195.40
195.30
195.20
195.10
195.00
194.90
194.80
194.70
194.60
194.50
194.40
194.30
194.20
194.10
194.00
193.90
193.80
193.70
193.60
193.50
193.40
193.30
193.20
193.10
193.00
192.90
*1 The value which omitted and computed the 3rd place below the decimal point
4
Data Sheet P13824EJ4V0DS
NX8562LB
Part Number
With FC-PC Connector
NX8562LB549-BA
NX8562LB557-BA
NX8562LB565-BA
NX8562LB573-BA
NX8562LB581-BA
NX8562LB589-BA
NX8562LB597-BA
NX8562LB606-BA
NX8562LB614-BA
NX8562LB622-BA
NX8562LB630-BA
NX8562LB638-BA
NX8562LB646-BA
NX8562LB654-BA
ITU-T Wavelength*1
(nm)
Frequency
(THz)
Without Connector
NX8562LB549
NX8562LB557
NX8562LB565
NX8562LB573
NX8562LB581
NX8562LB589
NX8562LB597
NX8562LB606
NX8562LB614
NX8562LB622
NX8562LB630
NX8562LB638
NX8562LB646
NX8562LB654
With SC-PC Connector
NX8562LB549-CA
NX8562LB557-CA
NX8562LB565-CA
NX8562LB573-CA
NX8562LB581-CA
NX8562LB589-CA
NX8562LB597-CA
NX8562LB606-CA
NX8562LB614-CA
NX8562LB622-CA
NX8562LB630-CA
NX8562LB638-CA
NX8562LB646-CA
NX8562LB654-CA
1554.94
1555.74
1556.55
1557.36
1558.17
1558.98
1559.79
1560.60
1561.41
1562.23
1563.04
1563.86
1564.67
1565.49
192.80
192.70
192.60
192.50
192.40
192.30
192.20
192.10
192.00
191.90
191.80
191.70
191.60
191.50
*1 The value which omitted and computed the 3rd place below the decimal point
5
Data Sheet P13824EJ4V0DS
NX8562LB
ABSOLUTE MAXIMUM RATINGS
Parameter
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Symbol
Ratings
300
Unit
mA
V
IF
VR
IF
2.0
10
mA
V
VR
TC
Tstg
Tsld
20
−20 to +65
−40 to +85
260 (10 sec.)
°C
°C
°C
Lead Soldering Temperature
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 °C, TC = −20 to +65 °C)
Parameter
Laser Set Temperature
Forward Voltage
Symbol
Tset
VF
Conditions
MIN.
20
TYP.
20
MAX.
Unit
°C
35
1.5
40
Pf = 20 mW
0.9
V
Threshold Current
Ith
mA
Optical Output Power from Fiber
Threshold Output Power
Quantum Efficiency
Pf
IF = 167 mA, TLD = Tset
IF = Ith
20
mW
µW
Pth
η
100
0.13
W/A
nm
Peak Emission Wavelength
Spectral Line Width
λp
Pf = 20 mW, CW, TLD = Tset
Pf = 20 mW, CW, 3 dB down
1527.6 ITU-T*1 1565.6
∆ν
1
2
MHz
dB
Side Mode Suppression Ratio
FM Response
SMSR Pf = 20 mW, CW
30
50
35
70
ηFM
RIN
fm
Pf = 20 mW
MHz/mA
dB/Hz
GHz
dB
Relative Intensity Noise
Flat frequency response
Polarization Extinction Ratio*2
Pf = 20 mW, 20 MHz to 3 GHz
Pf = 20 mW, +/−3 dB
Pf = 20 mW, CW
−150
1.8
15
ext
20
*1 Available for DWDM wavelengths based on ITU-T recommendation.
Please refer to the ORDERING INFORMATION.
*2 Polarization state of LD is aligned parallel to the slow axis.
6
Data Sheet P13824EJ4V0DS
NX8562LB
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: TLD = 25 °C, TC = −20 to +65 °C)
Parameter
Monitor Current
Symbol
Conditions
Pf = 20 mW, VR = 5 V
MIN.
100
TYP.
2
MAX.
Unit
µA
Im
ID
2 000
10
Dark Current
VR = 5 V
nA
γ *1
Tracking Error
Im = const.
0.5
dB
Pf
20 mW
*1 γ = 10 log
Pf
(mW)
20
T
LD = T = 25 ˚C
C
T
LD = 25 ˚C, T = –20 to +65 ˚C
C
Pf
0
I
m
I
m
(@ P (25 ˚C) = 20 mW)
f
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TEC: TLD = 25 °C, TC = −20 to +65 °C)
Parameter
Thermistor Resistance
B Constant
Symbol
Conditions
MIN.
9.5
TYP.
10.0
MAX.
10.5
3 550
1.0
Unit
kΩ
K
R
B
TLD = 25 °C
3 350
3 450
Cooler Current
IC
∆T = 65 − Tset, Pf = 20 mW
∆T = 65 − Tset, Pf = 20 mW
A
Cooler Voltage
VC
2.0
V
7
Data Sheet P13824EJ4V0DS
NX8562LB
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
OPTICAL OUTPUT POWER FROM
FIBER vs. FORWARD CURRENT
LONGITUDINAL MODE
10
0
24.0
20.0
16.0
12.0
8.0
–10
–20
–30
–40
–50
4.0
–60
–70
1 540
1 550
1 560
0
20
40
60
80
100
Wavelength λ (nm)
Forward Current I (mA)
F
FORWARD CURRENT vs.
FORWARD VOLTAGE
OPTICAL OUTPUT POWER FROM
FIBER vs. MONITOR CURRENT
24.0
20.0
16.0
12.0
8.0
120
100
80
60
40
4.0
20
0.4
0.8
1.2
1.6
(V)
2.0
2.4
0
0.4
0.8
Monitor Current I (mA)
1.2
1.6
2.0
0
Forward Voltage V
F
m
THERMISTOR RESISTANCE vs.
AMBIENT TEMPERATURE
50
30
20
10
5
3
2
1
0
25
50
75
Ambient Temperature T
A
(°C)
Remark The graphs indicate nominal characteristics.
8
Data Sheet P13824EJ4V0DS
NX8562LB
DFB-LD FAMILY
Absolute Maximum
Ratings
Electro-Optical Characteristics
(TC = 25 °C)
Part Number
TC
Tstg
Ith
Pf
λp
Application
Package
Coaxial
(°C)
(°C)
(mA)
(mW)
(nm)
TYP.
15
MIN.
2*1
TYP.
NX8300BE-CC
NX8300CE-CC
0 to +75
−40 to +85
1 310
2.5 Gb/s: STM-16
(S-16.1, L-16.1)
NX8303BG-CC
NX8503BG-CC
−10 to +85
−10 to +85
−40 to +85
−40 to +85
15
15
2*1
2*1
1 310
1 550
622 Mb/s: STM-4 (L-4.1)
Coaxial
Coaxial
156 Mb/s: STM-1
(L-1.2, L-1.3)
622 Mb/s: STM-4
(L-4.2, L-4.3)
NX8504BE-CC
NX8504CE-CC
−10 to +85
−40 to +85
15
2*1
1 550
622 Mb/s: STM-4
(L-4.2, L-4.3)
Coaxial
NX8560LJ-CC
NX8562LB
−20 to +70
−20 to +65
−40 to +85
−40 to +85
6
−2 dBm
1 550*2
1 550*2
≤ 10 Gb/s: STM-64
BFY with GPO
20
20
CW Light Source for external BFY
modulator
NX8563LB
−20 to +65
−20 to +70
−20 to +70
−20 to +70
−40 to +85
−40 to +85
−40 to +85
−40 to +85
20
7
10
0.6*1
0.6*1
20
1 550*2
1 550*2
1 550*2
1 550*2
CW Light Source for external BFY
modulator
NX8564LE-CC
NX8565LE-CC
NX8570SA
2.5 Gb/s: STM-16
BFY
BFY
BFY
EA modulator integrated
7
2.5 Gb/s: STM-16
EA modulator integrated
20
CW Light Source with λ
monitoring PD
*1 TYP.
*2 Available for DWDM Wavelength based on ITU-T recommendation
9
Data Sheet P13824EJ4V0DS
NX8562LB
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
C11159E
C11531E
C10535E
X13769X
Semiconductor device mounting technology manual
SEMICONDUCTOR SELECTION GUIDE Products & Packages (CD-ROM)
10
Data Sheet P13824EJ4V0DS
NX8562LB
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEC Corporation
NEC Building, 7-1, Shiba 5-chome,
SEMICONDUCTOR LASER
Minato-ku, Tokyo 108-01, Japan
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
AVOID EXPOSURE-Invisible
OUTPUT POWER
WAVELENGTH
mW MAX
nm
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
Laser Radiation is emitted from
this aperture
CLASS lllb LASER PRODUCT
11
Data Sheet P13824EJ4V0DS
NX8562LB
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
•
The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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