PF08109B [RENESAS]
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone; MOS FET功率放大器模块E-GSM和DCS1800双频手提电话
| 型号： | PF08109B |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
| 文件： | 总25页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
PF08109B
MOS FET Power Amplifier Module
for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-821C (Z)
Rev.3
Feb. 2001
Application
•
•
Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz)
For 3.5 V nominal battery use
Features
•
•
•
•
•
2 in / 2 out dual band amplifire
Simple external circuit including output matching circuit
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ
High efficiency : 50% Typ at nominal output power for E-GSM
43% Typ at 32.7 dBm for DCS1800
Pin Arrangement
• RF-O-12
1: N/C
2: N/C
3: Pout DCS
4: Vdd DCS
5: Vdd GSM
6: Pout GSM
7: N/C
6
7
5
G
G
8
4
3
9
10
G
2
11
12
G
1
8: Vtxlo
9: Pin GSM
10: Vapc GSM
11: Vapc DCS
12: Pin DCS
G: GND
PF08109B
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Rating
Unit
V
Supply voltage
Supply current
Vdd
8
IddGSM
IddDCS
Vtxlo
3
A
2
A
Vtxlo voltage
4
V
Vapc voltage
Vapc
4
V
Input power
Pin
10
dBm
°C
°C
W
Operating case temperature
Storage temperature
Output power
Tc (op)
Tstg
−30 to +100
−30 to +100
Pout GSM
Pout DCS
5
3
W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz),
and the DCS1800-band (1710 MHz to 1785 MHz).
Electrical Characteristics for DC
(Tc = 25°C)
Item
Symbol
Ids
Min
Typ
Max
100
3
Unit
µA
Test Condition
Vdd = 8 V, Vapc = 0 V
Vapc =2.2 V
Drain cutoff current
Vapc control current
Vtxlo control current
Iapc
mA
µA
Itxlo
100
Vtxlo = 2.4 V
Rev.3, Feb. 2001, page 2 of 23
PF08109B
Electrical Characteristics for E-GSM mode
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc DCS = 0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Symbol
f
Min
880
41
Typ
Max
915
Unit
MHz
%
Test Condition
Frequency range
Total efficiency (Hi)
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
ηT(Hi)
50
Pout GSM = 35.5dBm, Vtxlo = 0.1V,
Vapc GSM = controlled
2nd H.D.
3rd H.D.
VSWR (in)
ηT(Lo)
−45
−45
1.5
35
−38
−40
3
dBc
dBc
Total efficiency (Lo)
27
%
Pout GSM = 30.8dBm, Vtxlo = 2.4V,
Vapc GSM = controlled
Output power (1)(Hi)
Output power (1)(Lo)
Output power (2)(Hi)
Pout (1)(Hi)
35.5
36.0
31.3
34.0
dBm
dBm
dBm
Vapc GSM = 2.2V, Vtxlo = 0.1V
Vapc GSM = 2.2V, Vtxlo = 2.4V
Pout (1)(Lo) 30.8
Pout (2)(Hi) 33.5
Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 0.1V
Output power (2)(Lo)
Pout (2)(Lo) 28.8
29.3
dBm
Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 2.4V
Isolation
−42
−23
−36
−17
dBm
dBm
Vapc GSM = 0.2V, Vtxlo = 0.1V
Isolation at DCS RF-output
when GSM is active
Pout GSM = 35.5dBm, Vtxlo = 0.1V
Measured at f = 1760 to 1830MHz
Switching time
tr, tf
1
2
µs
Pout GSM = 0 to 35.5dBm,
Vtxlo = 0.1V
Stability
No parasitic oscillation
Vdd GSM = 3.0 to 5.1V,
Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM ≤ 2.2V, GSMpulse. Rg = 50Ω,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd GSM = 3.0 to 5.1V, t = 20sec.,
Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM ≤ 2.2V, GSM pulse. Rg = 50Ω,
Output VSWR = 10 : 1 All phases
Rev.3, Feb. 2001, page 3 of 23
PF08109B
Electrical Characteristics for DCS1800 mode
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc GSM =0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Symbol
f
Min
1710
36
Typ
Max
1785
Unit
MHz
%
Test Condition
Frequency range
Total efficiency (Hi)
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
ηT(Hi)
43
Pout DCS = 32.7dBm,
Vapc DCS = controlled
2nd H.D.
3rd H.D.
VSWR (in)
ηT(Lo)
−45
−45
1.5
25
−38
−40
3
dBc
dBc
Total efficiency (Lo)
17
%
Pout DCS = 26.7dBm,
Vapc DCS = controlled
Output power (1)
Output power (2)
Pout (1)
Pout (2)
32.7
30.7
33.2
31.2
dBm
dBm
Vapc DCS = 2.2V,
Vdd DCS = 3.0V, Vapc DCS = 2.2V,
Tc = +85°C
Isolation
−42
−10
−36
dBm
dBm
Vapc DCS = 0.2V
Isolation at GSM RF-output
when DCS is active
0
Pout DCS = 32.7dBm,
Measured at f = 1710 to 1785MHz
Switching time
Stability
tr, tf
1
2
µs
Pout DCS = 0 to 32.7dBm
No parasitic oscillation
Vdd DCS = 3.0 to 5.1V,
Pout DCS ≤ 32.7dBm, Vapc DCS ≤ 2.2V,
DCS pulse. Rg = 50Ω,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd DCS = 3.0 to 5.1V,
Pout DCS ≤ 32.7dBm, t = 20sec.,
Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω,
Output VSWR = 10 : 1 All phases
Rev.3, Feb. 2001, page 4 of 23
PF08109B
Characteristic Curves
High mode, f = 880 MHz
Pout
40
30
55
50
45
40
35
30
25
20
15
10
5
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Pin = 0 dBm,
Tc = 25°C,
20
10
Eff
Rg = Rl = 50 Ω
0
−10
−20
−30
−40
−50
−60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
Low mode, f = 880 MHz
40
30
55
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 2.4 V,
Pin = 0 dBm,
Tc = 25°C,
50
45
40
35
30
25
20
15
10
5
Pout
20
10
Rg = Rl = 50 Ω
0
Eff
−10
−20
−30
−40
−50
−60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
Rev.3, Feb. 2001, page 5 of 23
PF08109B
High mode, f = 915 MHz
Pout
40
30
55
50
45
40
35
30
25
20
15
10
5
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Pin = 0 dBm,
Tc = 25°C,
20
10
Eff
Rg = Rl = 50 Ω
0
−10
−20
−30
−40
−50
−60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
Low mode, f = 915 MHz
40
55
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 2.4 V,
Pin = 0 dBm,
Tc = 25°C,
30
20
50
45
40
35
30
25
20
15
10
5
Pout
10
Rg = Rl = 50 Ω
0
Eff
−10
−20
−30
−40
−50
−60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
Rev.3, Feb. 2001, page 6 of 23
PF08109B
38
37
36
35
34
33
Vdd = 3.5 V,
Vapc = 2.2 V,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
High mode
Low mode
800
840
880
920
960
1000
f (MHz)
50
45
40
35
30
25
20
15
High mode
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Pout = 35.5 dBm
Vtxlo = 0.1 V
Low mode: Pout = 30.8 dBm
Vtxlo = 2.4 V
Low mode
840
800
880
920
960
1000
f (MHz)
Rev.3, Feb. 2001, page 7 of 23
PF08109B
High mode
38
37
36
35
34
33
Vdd = 3.5 V,
Vapc = 2.2 V,
Vtxlo = 0.1 V,
Tc = 25°C,
f = 880 MHz
f = 915 MHz
Rg = Rl = 50 Ω
−6
−4
−2
0
2
4
6
Pin (dBm)
Low mode
38
37
36
35
34
33
Vdd = 3.5 V,
Vapc = 2.2 V,
Vtxlo = 2.4 V,
Tc = 25°C,
Rg = Rl = 50 Ω
f = 880 MHz
f = 915 MHz
−6
−4
−2
0
2
4
6
Pin (dBm)
Rev.3, Feb. 2001, page 8 of 23
PF08109B
High mode
60
55
50
45
40
35
30
25
20
f = 915 MHz
f = 880 MHz
Pout = 35.5 dBm,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Tc = 25°C,
Rg = Rl = 50 Ω
−6
−4
−2
0
2
4
6
Pin (dBm)
High mode
60
55
50
45
40
35
30
25
20
f = 915 MHz
f = 880 MHz
Pout = 34.8 dBm,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Tc = 25°C,
Rg = Rl = 50 Ω
−6
−4
−2
0
2
4
6
Pin (dBm)
Rev.3, Feb. 2001, page 9 of 23
PF08109B
Low mode
60
55
50
45
40
35
30
25
20
Pout = 30.8 dBm,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 2.4 V,
Tc = 25°C,
Rg = Rl = 50 Ω
f = 915 MHz
f = 880 MHz
−6
−4
−2
0
2
4
6
Pin (dBm)
Rev.3, Feb. 2001, page 10 of 23
PF08109B
60
50
40
30
20
10
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
Low mode
High mode
26
28
30
32
34
36
38
Pout (dBm)
4
3
2
1
0
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
High mode
Low mode
30
−20
−10
0
10
20
40
Pout (dBm)
Rev.3, Feb. 2001, page 11 of 23
PF08109B
60
50
40
30
20
10
Low mode
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
High mode
26
28
30
32
34
36
38
Pout (dBm)
4
3
2
1
0
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
High mode
Low mode
30 40
−20
−10
0
10
20
Pout (dBm)
Rev.3, Feb. 2001, page 12 of 23
PF08109B
f = 1710 MHz
40
30
50
45
40
35
30
25
20
15
10
5
f = 1710 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
20
Rg = Rl = 50 Ω
10
0
Pout
−10
−20
−30
−40
−50
Eff
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
f = 1785 MHz
40
50
f = 1785 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
30
20
45
40
35
30
25
20
15
10
5
Rg = Rl = 50 Ω
10
0
Pout
Eff
−10
−20
−30
−40
−50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)
Rev.3, Feb. 2001, page 13 of 23
PF08109B
50
45
40
35
30
25
20
15
10
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
f = 1785 MHz
f = 1710 MHz
22
24
26
28
30
32
34
Pout (dBm)
Rev.3, Feb. 2001, page 14 of 23
PF08109B
35
34
33
32
31
30
Vdd = 3.5 V,
Vapc = 2.2 V,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
1600
1650
1700
1750
1800
1850
1900
f (MHz)
50
45
40
35
30
25
20
15
10
Pout = 32.7 dBm
Pout = 26.7 dBm
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
1600
1650
1700
1750
1800
1850
1900
f (MHz)
Rev.3, Feb. 2001, page 15 of 23
PF08109B
35
34
33
32
31
30
Vdd = 3.5 V,
Vapc = 2.2 V,
Pin = 0 dBm,
Tc = 25°C,
f = 1710 MHz
f = 1785 MHz
Rg = Rl = 50 Ω
−6
−4
−2
0
2
4
6
Pin (dBm)
50
45
40
35
30
25
Vdd = 3.5 V,
Vapc = control,
Pout = 32.7 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
f = 1785 MHz
f = 1710 MHz
−6
−4
−2
0
2
4
6
Pin (dBm)
Rev.3, Feb. 2001, page 16 of 23
PF08109B
35
30
25
20
15
10
Vdd = 3.5 V,
Vapc = control,
Pout = 26.7 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
f = 1785 MHz
f = 1710 MHz
−6
−4
−2
0
2
4
6
Pin (dBm)
0
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
−5
−10
−15
−20
−25
−30
−35
Rg = Rl = 50 Ω
f = 1785 MHz
f = 1710 MHz
15
20
25
Pout (dBm)
30
35
Rev.3, Feb. 2001, page 17 of 23
PF08109B
40
39
38
37
36
35
34
33
32
GSM Hi mode
Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C,
Vtxlo = 0.1 V
f = 880 MHz
f = 915 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
38
GSM Lo mode
Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C,
37
36
35
34
33
32
31
30
Vtxlo = 2.4 V
f = 880 MHz
f = 915 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
Rev.3, Feb. 2001, page 18 of 23
PF08109B
50
45
40
35
30
25
20
GSM Hi mode
Pin = 0 dBm,
Po = 35.5 dBm,
Tc = 25°C,
Vtxlo = 0.1 V
f = 880 MHz
f = 915 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
40
35
30
25
20
15
10
GSM Lo mode
Pin = 0 dBm,
Po = 30.8 dBm,
Tc = 25°C,
Vtxlo = 2.4 V
f = 880 MHz
f = 915 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
Rev.3, Feb. 2001, page 19 of 23
PF08109B
38
37
36
35
34
33
32
31
30
DCS
Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C
f = 1710 MHz
f = 1785 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
45
40
35
30
25
20
DCS
Pin = 0 dBm,
Po = 32.7 dBm,
Tc = 25°C
f = 1710 MHz
f = 1785 MHz
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)
Rev.3, Feb. 2001, page 20 of 23
PF08109B
0
−10
−20
−30
−40
−50
−60
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
measured at
f = 1760 MHz
10
15
20
25
30
35
40
Pout (dBm)
0
−10
−20
−30
−40
−50
−60
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
measured at
f = 1830 MHz
10
15
20
25
30
35
40
Pout (dBm)
Rev.3, Feb. 2001, page 21 of 23
PF08109B
Package Dimensions
Unit: mm
1.8 ± 0.2
8
G
7
9
6
5
10
G
G
11
4
3
12
1
G
2
6
7
5
G
G
8
(Upper side)
4
3
9
10
G
2
11
12
G
1
13.75 ± 0.3
13.75 ± 0.3
1: N/C
2: N/C
3: Pout DCS
4: Vdd DCS
5: Vdd GSM
6: Pout GSM
7: N/C
(3.3)
(3.3)
(1.4) (1.0)
(1.0) (1.4)
(3.4)
(1.2)
(0.8)
(0.8)
8: Vtxlo
9: Pin GSM
10: Vapc GSM
11: Vapc DCS
12: Pin DCS
G: GND
(1.4)
(1.0)
(1.4)
(0.8)
(1.45)
(1.4)
Remark:
Coplanarity of bottom side of terminals
are less than 0 ± 0.1mm.
(1.1) (3.7)
(3.7)
(1.2)
(2.5) (2.5)
Hitachi Code
JEDEC
RF-O-12
(Bottom side)
JEITA
Mass (reference value)
Rev.3, Feb. 2001, page 22 of 23
PF08109B
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they
do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,
programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these
materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed
herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,
liability or other loss resulting from the information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially
at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained
herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be
imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
http://www.renesas.com
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.3, Feb. 2001, page 23 of 23
相关型号：
©2020 ICPDF网 联系我们和版权申明