PS2561-1W [RENESAS]

NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP;
PS2561-1W
型号: PS2561-1W
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP

分离技术 隔离技术 输入元件 输出元件
文件: 总18页 (文件大小:145K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
PHOTOCOUPLER  
PS2561-1,-2,PS2561L-1,-2  
HIGH ISOLATION VOLTAGE  
SINGLE TRANSISTOR TYPE  
MULTI PHOTOCOUPLER SERIES  
NEPOC Series−  
DESCRIPTION  
The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an  
NPN silicon phototransistor.  
PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for  
surface mount.  
FEATURES  
High Isolation voltage (BV = 5 000 Vr.m.s.)  
High collector to emitter voltage (VCEO = 80 V)  
High current transfer ratio (CTR = 200 % TYP.)  
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)  
Ordering number of taping product: PS2561L-1-E3, E4, F3, F4, PS2561L-2-E3, E4  
UL approved: File No. E72422 (S)  
CSA approved: No. CA 101391  
BSI approved: No. 7112  
SEMKO approved: No. 9317144  
NEMKO approved: No. A21409  
DEMKO approved: No. 300535  
FIMKO approved: No. 167265-08  
VDE0884 approved (Option)  
APPLICATIONS  
Power supply  
Telephone/FAX.  
FA/OA equipment  
Programmable logic controller  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PN10234EJ01V0DS (1st edition)  
(Previous No. P12989EJ5V0DS00)  
Date Published February 2003 CP(K)  
Printed in Japan  
The mark shows major revised points.  
NEC Compound Semiconductor Devices 1992, 2003  
PS2561-1,-2,PS2561L-1,-2  
PACKAGE DIMENSIONS (UNIT : mm)  
DIP Type (New package)  
PS2561-1  
TOP VIEW  
4.6±0.35  
4
3
1. Anode  
2. Cathode  
3. Emitter  
4. Collector  
1
2
7.62  
0 to 15˚ +0.1  
0.25–0.05  
1.25±0.15  
0.50±0.10  
0.25  
M
2.54  
Caution New package 1-ch only  
DIP Type  
PS2561-1  
PS2561-2  
TOP VIEW  
TOP VIEW  
4.6±0.5  
9.7±0.5  
8
7
2
6
5
4
3
1. Anode  
1, 3. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2, 4. Cathode  
5, 7. Emitter  
6, 8. Collector  
1
2
1
3
4
7.62  
7.62  
0 to 15˚ +0.1  
0.25–0.05  
0 to 15˚ +0.1  
0.25–0.05  
1.25±0.15  
1.25±0.15  
0.50±0.10  
0.25  
0.50±0.10  
0.25  
M
M
2.54  
2.54  
2
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
Lead Bending Type (New package)  
PS2561L-1  
TOP VIEW  
4.6±0.35  
4
3
1. Anode  
2. Cathode  
3. Emitter  
4. Collector  
1
2
1.25±0.15  
0.25  
0.9±0.25  
9.60±0.4  
M
0.15  
2.54  
Caution New package 1-ch only  
Lead Bending Type  
PS2561L-1  
PS2561L-2  
TOP VIEW  
TOP VIEW  
4.6±0.5  
9.7±0.5  
8
7
2
6
5
4
3
1. Anode  
1, 3. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2, 4. Cathode  
5, 7. Emitter  
6, 8. Collector  
1
2
1
3
4
1.25±0.15  
0.25  
0.9±0.25  
9.60±0.4  
0.9±0.25  
9.60±0.4  
1.25±0.15  
0.25  
M
M
0.15  
2.54  
0.15  
2.54  
3
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
Lead Bending Type For Long Creepage Distance (New Package)  
PS2561L1-1  
TOP VIEW  
PS2561L2-1  
TOP VIEW  
4.6±0.35  
4.6±0.35  
4
3
4
3
1. Anode  
4
1
3
1. Anode  
4
3
2. Cathode  
3. Emitter  
4. Collector  
2. Cathode  
3. Emitter  
4. Collector  
1
2
1
2
1
2
2
10.16  
0.9±0.25  
0.50±0.1  
0.25 M  
0.25  
1.25±0.15  
0.25 M  
10.16  
+0.2  
–0.5  
+0.1  
–0.05  
1.25±0.15  
11.8  
0.25  
0 to 15˚  
2.54  
2.54  
Lead Bending Type For Long Creepage Distance  
PS2561L1-1  
PS2561L2-1  
4.6±0.5  
TOP VIEW  
TOP VIEW  
4.6±0.5  
4
3
4
3
1. Anode  
1. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2. Cathode  
3. Emitter  
4. Collector  
1
2
1
2
10.16  
10.16  
1.25±0.15  
0.25  
0.9±0.25  
+0.2  
M
11.8  
–0.5  
0 to 15˚  
+0.1  
0.25  
–0.05  
0.25  
2.54  
1.25±0.15  
0.50±0.10  
0.25  
M
2.54  
4
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
MARKING EXAMPLE  
PS2561-1  
PS2561-2  
No. 1 pin  
Mark  
No. 1 pin  
Mark  
Country Assembled  
Type Number  
2561  
PS2561-2  
Assembly Lot  
Assembly Lot  
M 003  
M 003  
M
0
03  
M
0
03  
Week Assembled  
Year Assembled  
(Last 1 Digit)  
Week Assembled  
Year Assembled  
(Last 1 Digit)  
In-house Code  
CTR Rank Code  
In-house Code  
CTR Rank Code  
Package  
Made in Japan Made in Taiwan  
Package  
Standard PKG  
New PKG  
Made in Japan Made in Taiwan  
Standard PKG  
New PKG  
F
Blank  
E
F
Blank  
H
5
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
ORDERING INFORMATION  
Part Number  
Package  
4-pin DIP  
Packing Style  
Safety Standard  
Approval  
Appliction Part  
Number*1  
PS2561-1  
Magazine case 100 pcs  
Standard products  
(UL, CSA, BSI,  
NEMKO, SEMKO,  
DEMKO, FIMKO  
approved)  
PS2561-1  
PS2561L-1  
PS2561L1-1  
PS2561L2-1  
PS2561L-1-E3  
PS2561L-1-E4  
PS2561L-1-F3  
PS2561L-1-F4  
PS2561-2  
Embossed Tape 1 000 pcs/reel  
Embossed Tape 2 000 pcs/reel  
Magazine case 45 pcs  
8-pin DIP  
4-pin DIP  
PS2561-2  
PS2561-1  
PS2561L-2  
PS2561L-2-E3  
PS2561L-2-E4  
PS2561-1-V  
Embossed Tape 1 000 pcs/reel  
Magazine case 100 pcs  
VDE0884 approved  
products (Option)  
PS2561L-1-V  
PS2561L1-1-V  
PS2561L2-1-V  
PS2561L-1-V-E3  
PS2561L-1-V-E4  
PS2561L-1-V-F3  
PS2561L-1-V-F4  
PS2561L-2-V  
PS2561L-2-V  
PS2561-2-V-E3  
PS2561L-2-V-E4  
Embossed Tape 1 000 pcs/reel  
Embossed Tape 2 000 pcs/reel  
Magazine case 45 pcs  
8-pin DIP  
PS2561-2  
Embossed Tape 1 000 pcs/reel  
*1 For the application of the Safety Standard, following part number should be used.  
6
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Parameter  
Symbol  
Ratings  
PS2561-1,  
Unit  
PS2561-2,  
PS2561L-2  
PS2561L-1  
Diode  
Reverse Voltage  
VR  
IF  
6
V
mA  
Forward Current (DC)  
Power Dissipation Derating  
Power Dissipation  
80  
PD/°C  
PD  
1.5  
1.2  
mW/°C  
mW/ch  
A
150  
120  
Peak Forward Current*1  
IFP  
1
80  
7
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
V
V
50  
mA/ch  
mW/°C  
mW/ch  
Vr.m.s.  
°C  
Power Dissipation Derating  
Power Dissipation  
PC/°C  
PC  
1.5  
1.2  
150  
120  
Isolation Voltage*2  
BV  
5 000  
Operating Ambient Temperature  
Storage Temperature  
TA  
–55 to +100  
–55 to +150  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
7
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.17  
MAX.  
1.4  
5
Unit  
V
Diode  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
IF = 10 mA  
VR = 5 V  
IR  
µA  
pF  
nA  
Ct  
V = 0 V, f = 1.0 MHz  
VCE = 80 V, IF = 0 mA  
50  
Transistor Collector to Emitter Dark  
Current  
ICEO  
100  
400  
0.3  
Coupled  
Current Transfer Ratio  
(IC/IF)*1  
CTR  
IF = 5 mA, VCE = 5 V  
IF = 10 mA, IC = 2 mA  
80  
200  
%
V
Collector Saturation  
Voltage  
VCE (sat)  
Isolation Resistance  
Isolation Capacitance  
Rise Time*2  
RI-O  
CI-O  
tr  
VI-O = 1.0 kVDC  
1011  
V = 0 V, f = 1.0 MHz  
0.5  
3
pF  
µs  
VCC = 10 V, IC = 2 mA, RL = 100 Ω  
Fall Time*2  
tf  
5
*1 CTR rank (only PS2561-1, PS2561L-1)  
L
:
200 to 400 (%)  
80 to 240 (%)  
M :  
D : 100 to 300 (%)  
H : 80 to 160 (%)  
W : 130 to 260 (%)  
*2 Test circuit for switching time  
Pulse Input  
VCC  
µ
PW = 100  
s
Duty Cycle = 1/10  
I
F
VOUT  
50  
RL = 100 Ω  
8
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
150  
100  
150  
100  
50  
PS2561-1  
PS2561-1  
PS2561L-1  
PS2561L-1  
PS2561-2  
PS2561-2  
1.5 mW/˚C  
PS2561L-2  
1.5 mW/˚C  
PS2561L-2  
50  
0
1.2 mW/˚C  
1.2 mW/˚C  
100  
Ambient Temperature T  
25  
50  
75  
125  
(˚C)  
150  
0
25  
50  
75  
100  
125  
(˚C)  
150  
A
Ambient Temperature T  
A
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
50  
70  
T
A
= +100 ˚C  
+60 ˚C  
60  
50  
40  
30  
20  
10  
+25 ˚C  
10  
5
0 ˚C  
–25 ˚C  
–55 ˚C  
1
0.5  
IF = 5 mA  
0.1  
0
4
8
10  
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
Forward Voltage V (V)  
2
6
F
Collector to Emitter Voltage VCE (V)  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
40  
10 000  
1 000  
100  
10  
V
CE = 80 V  
40 V  
10  
5
24 V  
10 V  
5 V  
IF  
= 1 mA  
1
0.5  
1
0.1  
50  
–25  
0
25  
50  
75  
100  
1.0  
0
0.2  
0.4  
0.6  
0.8  
Ambient Temperature T (˚C)  
A
Collector Saturation Voltage VCE(sat) (V)  
9
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
450  
400  
350  
300  
250  
V
CE = 5 V  
Sample A  
B
C
200  
150  
100  
Normalized to 1.0  
at T  
A
= 25 ˚C,  
I
F
= 5 mA, VCE = 5 V  
50  
0
–50  
0.05 0.1  
0.5  
Forward Current I  
–25  
0
25  
50  
75  
100  
1
5
10  
50  
F
(mA)  
Ambient Temperature T  
A
(˚C)  
SWITCHING TIME vs.  
LOAD RESISTANCE  
SWITCHING TIME vs.  
LOAD RESISTANCE  
50  
10  
1 000  
100  
10  
t
f
I = 5 mA,  
F
I = 2 mA,  
C
t
f
VCC = 5 V,  
VCC = 10 V,  
tr  
CTR = 290 %  
CTR = 290 %  
µ
µ
ts  
td  
ts  
1
tr  
t
d
0.1  
10  
1
100  
10 k  
5 k  
50 100  
500  
1 k  
500 1 k  
5 k 10 k  
()  
50 k 100 k  
Load Resistance R  
L
Load Resistance R  
L
()  
FREQUENCY RESPONSE  
LONG TERM CTR DEGRADATION  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
V
F
= 5 mA,  
CE = 5 V  
TYP.  
0
–5  
I = 5 mA  
F
TA  
= 25 ˚C  
–10  
–15  
–20  
100 Ω  
I
F
= 5 mA  
A
T = 60 ˚C  
RL = 1 kΩ  
300 Ω  
0
103  
Time (Hr)  
102  
104  
105  
0.5  
1
2
5
10 20 50 100200 500  
Frequency f (kHz)  
Remark The graphs indicate nominal characteristics.  
10  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
TAPING SPECIFICATIONS (UNIT : mm)  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
+0.1  
4.5 MAX.  
φ
1.5–0  
1.55±0.1  
4.0±0.1  
0.4  
5.3±0.1  
8.0±0.1  
Tape Direction  
PS2561L-1-E3  
PS2561L-1-E4  
Outline and Dimensions (Reel)  
2.0±0.5  
2.0±0.5  
φ13.0±0.2  
R 1.0  
φ
φ
φ21.0±0.8  
17.5±1.0  
21.5±1.0  
15.9 to 19.4  
Outer edge of  
flange  
Packing: 1 000 pcs/reel  
11  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
+0.1  
4.5 MAX.  
1.5  
–0  
1.55±0.1  
8.0±0.1  
4.0±0.1  
0.4  
5.3±0.1  
Tape Direction  
PS2561L-1-F3  
PS2561L-1-F4  
Outline and Dimensions (Reel)  
2.0±0.5  
2.0±0.5  
φ13.0±0.2  
R 1.0  
φ
φ
φ21.0±0.8  
17.5±1.0  
21.5±1.0  
15.9 to 19.4  
Outer edge of  
flange  
Packing: 2 000 pcs/reel  
12  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
+0.1  
1.5  
–0  
4.5 MAX.  
10.4±0.1  
4.0±0.1  
0.3  
1.55±0.1  
12.0±0.1  
Tape Direction  
PS2561L-2-E4  
PS2561L-2-E3  
Outline and Dimensions (Reel)  
2.0±0.5  
2.0±0.5  
13.0±0.2  
R 1.0  
21.0±0.8  
17.5±1.0  
21.5±1.0  
15.9 to 19.4  
Outer edge of  
flange  
Packing: 1 000 pcs/reel  
13  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
NOTES ON HANDLING  
1. Recommended soldering conditions  
(1) Infrared reflow soldering  
• Peak reflow temperature  
260°C or below (package surface temperature)  
• Time of peak reflow temperature  
• Time of temperature higher than 220°C  
10 seconds or less  
60 seconds or less  
• Time to preheat temperature from 120 to 180°C 120±30 s  
• Number of reflows  
• Flux  
Three  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt% is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
260˚C MAX.  
220˚C  
to 60 s  
180˚C  
120˚C  
120±30 s  
(preheating)  
Time (s)  
(2) Wave soldering  
• Temperature  
• Time  
260°C or below (molten solder temperature)  
10 seconds or less  
• Preheating conditions  
• Number of times  
• Flux  
120°C or below (package surface temperature)  
One (Allowed to be dipped in solder including plastic mold portion.)  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine  
content of 0.2 Wt% is recommended.)  
(3) Cautions  
• Fluxes  
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.  
2. Cautions regarding noise  
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between  
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute  
maximum ratings.  
14  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
USAGE CAUTIONS  
1. Protect against static electricity when handling.  
2. Avoid storage at a high temperature and high humidity.  
15  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)  
Parameter  
Application classification (DIN VDE 0109)  
Symbol  
Speck  
Unit  
for rated line voltages 300 Vr.m.s.  
for rated line voltages 600 Vr.m.s.  
IV  
III  
Climatic test class (DIN IEC 68 Teil 1/09.80)  
55/100/21  
Dielectric strength  
maximum operating isolation voltage  
Test voltage (partial discharge test, procedure a for type test and random test)  
Upr = 1.2 × UIORM, Pd < 5 pC  
UIORM  
Upr  
890  
Vpeak  
Vpeak  
1 068  
Test voltage (partial discharge test, procedure b for all devices test)  
Upr = 1.6 × UIORM, Pd < 5 pC  
Upr  
1 424  
Vpeak  
Highest permissible overvoltage  
Degree of pollution (DIN VDE 0109)  
Clearance distance  
UTR  
8 000  
2
Vpeak  
> 7.0  
mm  
mm  
Creepage distance  
> 7.0  
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)  
Material group (DIN VDE 0109)  
Storage temperature range  
CTI  
175  
III a  
Tstg  
TA  
–55 to +150  
–55 to +100  
°C  
°C  
Operating temperature range  
Isolation resistance, minimum value  
VIO = 500 V dc at TA = 25 °C  
Ris MIN.  
Ris MIN.  
1012  
1011  
VIO = 500 V dc at TA MAX. at least 100 °C  
Safety maximum ratings (maximum permissible in case of fault, see thermal  
derating curve)  
Package temperature  
Tsi  
Isi  
175  
400  
700  
°C  
mA  
mW  
Current (input current IF, Psi = 0)  
Power (output or total power dissipation)  
Isolation resistance  
Psi  
VIO = 500 V dc at TA = 175 °C (Tsi)  
Ris MIN.  
109  
16  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
The information in this document is current as of February, 2003. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4-0110  
17  
Data Sheet PN10234EJ01V0DS  
PS2561-1,-2,PS2561L-1,-2  
SAFETY INFORMATION ON THIS PRODUCT  
The product contains gallium arsenide, GaAs.  
Caution GaAs Products  
GaAs vapor and powder are hazardous to human health if inhaled or ingested.  
• Do not destroy or burn the product.  
• Do not cut or cleave off any part of the product.  
• Do not crush or chemically dissolve the product.  
• Do not put the product in the mouth.  
Follow related laws and ordinances for disposal. The product should be excluded from general  
industrial waste or household garbage.  
For further information, please contact  
NEC Compound Semiconductor Devices, Ltd.  
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com  
NEC Compound Semiconductor Devices Hong Kong Limited  
Hong Kong Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-558-2120  
FAX: +82-2-558-5209  
http://www.ee.nec.de/  
TEL: +49-211-6503-01 FAX: +49-211-6503-487  
FAX: +852-3107-7309  
NEC Electronics (Europe) GmbH  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
0302  

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