PS2801C-1-F3-N-A [RENESAS]
NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,2.5KV ISOLATION,SO;型号: | PS2801C-1-F3-N-A |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,2.5KV ISOLATION,SO 分离技术 隔离技术 输入元件 输出元件 |
文件: | 总14页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
PS2801C-1, PS2801C-4
R08DS0072EJ0400
Rev.4.00
Jan 9, 2013
HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER
DESCRIPTION
These products are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
This package has shield effect to cut off ambient light.
FEATURES
PIN CONNECTION
(Top View)
•
•
•
•
•
•
High isolation voltage (BV = 2 500 Vr.m.s.)
Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
High collector to emitter voltage (VCEO : 80 V)
Ordering number of tape product: PS2801C-1-F3, PS2801C-4-F3
Pb-Free product
PS2801C-1
4 3
<R>
<R>
1. Anode
2. Cathode
3. Emitter
Safety standards
4. Collector
• UL approved: File No. E72422
1 2
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• BSI approved (BS EN 60065, BS EN 60950) (PS2801C-1 only)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
PS2801C-4
16151413121110 9
APPLICATIONS
1 2 3 4 5 6 7 8
•
•
•
•
Programmable logic controllers
Measuring instruments
Power supply
1. 3. 5. 7. Anode
2. 4. 6. 8. Cathode
9. 11. 13. 15. Emitter
10. 12. 14. 16. Collector
Hybrid IC
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 1 of 12
PS2801C-1, PS2801C-4e
PACKAGE DIMENSIONS (UNIT: mm)
PS2801C-1
PS2801C-4
2.7 0.3
10.3 0.3
4
3
16
9
1
2
1
8
7.0 0.3
4.4
7.0 0.3
4.4
0.5 0.3
+0.10
–0.05
0.5 0.3
M
0.40
0.12
1.27
1.27
0.4 0.1
M
0.12
<R>
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
4.5 mm
4.5 mm
2.5 mm
0.1 mm
Outer Creepage Distance
Inner Creepage Distance
Isolation Distance
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 2 of 12
PS2801C-1, PS2801C-4e
<R>
MARKING EXAMPLE
PS2801C-1
Company initial
Made in Taiwan
Last 2 numbers of type
No. : 1C
Assembly Lot
3 0 1
Week Assembled
Year Assembled (Last 1 digit)
Made in Taiwan
Halogen free
"
" (Vertical bar)
:Made in Taiwan & Halogen free
Made in Japan
"
" (Square)
:Made in Japan
Made in Japan
Halogen free
"
" (Horizontal bar)
:Made in Japan & Halogen free
PS2801C-4
Country Assembled
Assembly Lot
R
PS2801C-4
NL301
No. 1 pin
Mark
N L 3 01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
(L: Pb-Free)
Rank Code
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 3 of 12
PS2801C-1, PS2801C-4e
<R>
ORDERING INFORMATION
Solder Plating
Specification etc.
Safety Standard
Approval
Application
Part Number
Order Number
Packing Style
Part Number*1
PS2801C-1-F3
PS2801C-4-F3
PS2801C-1-F3-A
PS2801C-4-F3-A
Pb-Free
Embossed Tape 3 500 pcs/reel Standard products
(UL, CSA, BSI
PS2801C-1
PS2801C-4
PS2801C-1
PS2801C-4
PS2801C-1
Embossed Tape 2 500 pcs/reel
approved)
PS2801C-1-V-F3 PS2801C-1-V-F3-A
PS2801C-4-V-F3 PS2801C-4-V-F3-A
Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5
(VDE0884-5)
Embossed Tape 2 500 pcs/reel
Approved (Option)
PS2801C-1-F3
PS2801C-1Y-F3-A
Special version
(Pb-Free and
Halogen Free)
Embossed Tape 3 500 pcs/reel Standard products
(UL, CSA, BSI
approved)
PS2801C-1-V-F3 PS2801C-1Y-V-F3-A
Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5
(VDE0884-5)
Approved (Option)
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
PS2801C-1 PS2801C-4
Unit
Diode
Forward Current (DC)
Reverse Voltage
IF
VR
30
6
mA/ch
V
Power Dissipation Derating
Power Dissipation
ΔPD/°C
PD
0.6
60
0.8
80
mW/°C
mW/ch
A/ch
V
Peak Forward Current *1
IFP
0.5
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
80
5
30
V
mA/ch
mW/°C
mW/ch
Vr.m.s.
°C
Power Dissipation Derating
ΔPC/°C
PC
1.2
Power Dissipation
120
Isolation Voltage *2
BV
2 500
Operating Ambient Temperature
Storage Temperature
TA
−55 to +100
−55 to +150
Tstg
°C
Notes: *1. PW = 100 μs, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2801C-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2801C-4).
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 4 of 12
PS2801C-1, PS2801C-4e
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
1.4
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
VF
IR
IF = 5 mA
VR = 5 V
1.2
5
μA
pF
Ct
V = 0 V, f = 1.0 MHz
VCE = 80 V, IF = 0 mA
10
Collector to Emitter
Dark Current
Transistor
Coupled
ICEO
100
400
0.3
nA
Current Transfer Ratio
(IC/IF) *1
CTR
IF = 5 mA, VCE = 5 V
IF = 10 mA, IC = 2 mA
50
%
V
Collector Saturation
Voltage
VCE (sat)
0.13
Isolation Resistance
Isolation Capacitance
Rise Time *2
RI-O
CI-O
tr
VI-O = 1.0 kVDC
1011
Ω
V = 0 V, f = 1.0 MHz
0.4
5
pF
μs
VCC = 5 V, IC = 2 mA, RL = 100 Ω
Fall Time *2
tf
7
Turn-on Time *2
Turn-off Time *2
ton
toff
10
7
<R>
<R>
Notes: *1. CTR rank
PS2801C-1
N : 50 to 400 (%)
P : 150 to 300 (%)
L : 100 to 300 (%)
M : 100 to 400 (%)
PS2801C-4
N : 50 to 400 (%)
M : 100 to 400 (%)
*2. Test circuit for switching time
Pulse Input
V
CC
PW = 100
Duty Cycle = 1/10
μ
s
Input
t
on
t
off
I
F
t
d
t
s
V
OUT
50 Ω
RL = 100 Ω
90%
Output
10%
t
r
t
f
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 5 of 12
PS2801C-1, PS2801C-4e
<R>
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
160
120
80
100
80
60
40
20
0
PS2801C-4
PS2801C-1
PS2801C-4
0.8 mW/°C
1.2 mW/°C
PS2801C-1
0.6 mW/°C
40
0
0
25
50
75
100
(°C)
125
0
25
50
75
100
(°C)
125
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
30
25
20
15
10
5
CTR = 250%
I = 10 mA
F
T
A
= +100
°C
°C
°C
+60
+25
10
5
5 mA
0
–25
–55
°C
°C
°C
1
0.5
2 mA
1 mA
0.1
0.05
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER DARK
COLLECTOR SATURATION VOLTAGE
CURRENT vs. AMBIENT TEMPERATURE
10
10 000
1 000
100
10
IF = 10 mA
5 mA
2 mA
V
CE = 80 V
70 V
24 V
1 mA
1
CTR = 200%
CTR = 250%
0.1
1
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE (sat) (V)
Ambient Temperature T
A
(°C)
Remark The graphs indicate nominal characteristics.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 6 of 12
PS2801C-1, PS2801C-4e
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
0
CTR = 250%
V
n = 3
CE = 5 V,
80%
Sample A
B
C
Normalized to 1.0
at T
A
= 25°C,
I
F
= 5 mA, VCE = 5 V
–75
–50
–25
0
25
50
(°C)
75
100
10 000
1 000
0.01
0.1
1
10
100
Ambient Temperature T
A
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
10
1
1 000
I
C
= 2 mA, VCC = 5 V,
I
F
= 5 mA, VCC = 5 V,
CTR = 228%
CTR = 228%
t
f
tf
μ
μ
tr
100
t
s
td
t
s
10
t
t
r
d
0.1
1
1
10
Load Resistance R
100
10
100
1 000
(Ω)
L
(kΩ)
Load Resistance R
L
FREQUENCY RESPONSE
5
0
5
100 Ω
–
RL = 1 kΩ
–
–
–
–
10
15
20
25
300 Ω
I
V
F
= 5 mA,
CE = 5 V
0.1
1
10
Frequency f (kHz)
100
Remark The graphs indicate nominal characteristics.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 7 of 12
PS2801C-1, PS2801C-4e
<R>
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.±±±.1
+±.1
4.±±±.1
φ
1.5
–±
2.8 MAX.
±.3
2.3±±.1
1.55±±.1
4.±±±.1
2.85±±.1
Tape Direction
PS28±1C-1-F3
Outline and Dimensions (Reel)
2.±±±.5
2.±±±.5
13.±±±.2
φ
φ
R 1.±
φ
φ
21.±±±.8
17.5±1.±
21.5±1.±
15.9 to 19.4
Outer edge of
flange
Packing: 3 5±± pcs/reel
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 8 of 12
PS2801C-1, PS2801C-4e
Outline and Dimensions (Tape)
2.0 0.1
4.0 0.1
+0.1
1.5
–0
2.8 MAX.
φ
0.3
8.3 0.1
1.55 0.1
12.0 0.1
2.3 0.1
Tape Direction
PS2801C-4-F3
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
13.0 0.2
φ
R 1.0
φ
φ
φ
21.0 0.8
17.5 1.0
21.5 1.0
15.9 to 19.4
Outer edge of
flange
Packing: 2 500 pcs/reel
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 9 of 12
PS2801C-1, PS2801C-4e
<R>
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
•
•
•
•
•
•
Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
60 seconds or less
120±30 s
Time of peak reflow temperature
Time of temperature higher than 220°C
Time to preheat temperature from 120 to 180°C
Number of reflows
Three
Flux
Rosin flux containing small amount of chlorine (The
flux with a maximum chlorine content of 0.2 Wt% is
recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120 30 s
(preheating)
Time (s)
(2) Wave soldering
•
•
•
•
Temperature
Time
Preheating conditions
Number of times
260°C or below (molten solder temperature)
10 seconds or less
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic
mold portion.)
•
Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
(3) Soldering by Soldering Iron
•
•
•
Peak Temperature (lead part temperature)
Time (each pins)
Flux
350°C or below
3 seconds or less
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
Fluxes
•
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 10 of 12
PS2801C-1, PS2801C-4e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below
IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like
into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 11 of 12
PS2801C-1, PS2801C-4e
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1)
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
UIORM
Upr
705
1 128
Vpeak
Vpeak
<R>
<R>
Upr = 1.6 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr
1 322
Vpeak
Vpeak
Highest permissible overvoltage
UTR
6 000
2
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
<R>
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
CTI
175
Material group (DIN EN 60664-1 VDE0110 Part 1)
Storage temperature range
III a
Tstg
TA
−55 to +150
−55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Tsi
Isi
Psi
150
300
500
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Ris MIN.
109
Ω
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 12 of 12
Revision History
PS2801C-1, PS2801C-4 Data Sheet
Description
Summary
Rev.
Date
Page
1.00
4.00
May 30, 2006
Jan 9, 2013
−
This data sheet was released as PN10610EJ01V0DS
Throughout Renesas format is applied to this data sheet.
p.1
p.2
The ordering number and safety standards are revised.
PHOTOCOUPLER CONSTRUCTION is added as each distance of this
device.
p.3
p.4
The explanation in MARKING EXAMPLE is revised.
ORDERING INFORMATION is modified with the revision of the safety
standards.
p.5
p.7
Turn-on Time (ton) and Turn-off Time (toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
The graph of LONG TERM CTR DEGRADATION is deleted from those in
TYPICAL CHARACTERISTICS.
p.8
PS2801C-1-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.9
PS2801C-4-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.10
p.12
The note about temperature condition of the recommended soldering
conditions is deleted.
The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are
changed as follows.
-- Test voltage is changed from the factor, 1.5, and the value, 1058, to 1.6
and 1128, respectively.
-- Clearance distance is moved to PHOTOCOUPLER CONSTRUCTION with
changing 5.0 (min.) to 4.5 (min.).
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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