R2J20656ANP [RENESAS]
Integrated Driver - MOS FET (DrMOS); 集成的驱动程序 - MOS场效应管（的DrMOS ）
| 型号： | R2J20656ANP |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Integrated Driver - MOS FET (DrMOS) |
| 文件： | 总16页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
R2J20656ANP
Integrated Driver - MOS FET (DrMOS)
Description
R07DS0201EJ0100
Rev.1.00
Jan 25, 2011
The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
Compliant with Intel 6 6 DrMOS Specification.
Built-in power MOS FET suitable for Notebook, Desktop, Server application.
Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
High-frequency operation (above 1 MHz) possible
VIN operating-voltage range: 27 Vmax
Large average output current (Max.35 A)
Achieve low power dissipation
Controllable driver: Remote on/off
Zero current detection for a diode emulation operation
Double thermal protection: Thermal Warning & Thermal Shutdown
Built-in bootstrapping Switch
Small package: QFN40 (6 mm 6 mm 0.95 mm)
Pb-free/Halogen-Free
Outline
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
VCIN BOOT
MOS FET Driver
CGND VDRV
GH
VIN
1
10
40
11
THWN
Driver
Pad
High-side
MOS Pad
DISBL#
ZCD_EN#
PWM
VSWH
Low-side MOS Pad
31
20
30
21
GL PGND
(Bottom view)
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 15
R2J20656ANP
Preliminary
Block Diagram
Driver Chip
VCIN
VDRV
BOOT
GH
THWN
THDN
Boot
SW
THWN
VIN
DISBL#
High Side
MOS FET
2 μA
UVL
CGND
Level Shifter
20 k
CGND
VCIN
Zero
Current
Det.
160 k
ZCD_EN#
VSWH
Overlap
Protection.
& Logic
Low Side
MOS FET
VDRV
VCIN
Input Logic
(TTL Level)
(3 state in)
PWM
35 k
PGND
CGND
GL
Notes: 1. Truth table for the DISBL# pin
2. Truth table for the ZCD_EN# pin
DISBL# Input
"L"
Driver Chip Status
Shutdown (GL, GH = "L")
Shutdown (GL, GH = "L")
ZCD_EN# Input
"L"
Driver Chip Status
"Diode Emulation Mode"
"Open"
"H"
"Open"
"Continuous Conduction
Mode"
Enable (GL, GH = "Active")
"H"
"Continuous Conduction
Mode"
3. Output signal from the UVL block
4. Output signal from the THWN block
For active
"H"
"H"
Thermal
Warning
UVL output
Logic Level
Normal
operating
For shutdown
Thermal Warning
Logic Level
"L"
VCIN
"L"
T
IC(°C)
VL
VH
TwarnL TwarnH
5. Truth table for the THDN block
Driver IC Temp.
< 150°C
Driver Chip Status
Enable (GL, GH = "Active")
> 150°C
Shutdown (GL, GH = "L")
(latch-off)
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 2 of 15
R2J20656ANP
Preliminary
Pin Arrangement
10
9
8
7
6
5
4
3
2
1
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
VIN
VIN
PWM
DISBL#
THWN
CGND
GL
VIN
CGND
VIN
VIN
VSWH
PGND
PGND
PGND
PGND
PGND
VSWH
VSWH
VSWH
VSWH
VSWH
VSWH
21 22 23 24 25 26 27 28 29 30
(Top view)
Note: All die-pads (three pads in total) should be soldered to PCB.
Pin Description
Pin Name
Pin No.
Description
Remarks
ZCD_EN#
1
Zero current detection enable
When asserted "L" signal, zero crossing
detection is enabled
VCIN
VDRV
BOOT
CGND
GH
2
3
4
Control input voltage (+5 V input) Driver Vcc input
Gate supply voltage (+5 V input) 5 V gate drive
Bootstrap voltage pin
Control signal ground
High-side gate signal
Input voltage
To be supplied +5 V through internal switch
5, 37, Pad
6
Should be connected to PGND externally
Pin for monitor
VIN
8 to 14, Pad
VSWH
PGND
GL
7, 15, 29 to 35, Pad Phase output/Switch output
16 to 28
36
Power ground
Low-side gate signal
Thermal warning
Signal disable
Pin for monitor
THWN
DISBL#
38
Thermal warning when over 115°C
39
Disabled when DISBL# is "L".
This Pin is pulled low when internal IC over the
thermal shutdown level, 150°C.
PWM
40
PWM drive logic input
5 V logic input
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 3 of 15
R2J20656ANP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pt(25)
Rating
Units
Note
Power dissipation
25
W
1
Pt(110)
8
Average output current
Input voltage
Iout
35
A
V
VIN(DC)
–0.3 to +27
2
2, 4
2
VIN(AC)
30
Supply voltage & Drive voltage
Switch node voltage
VCIN & VDRV
VSWH(DC)
VSWH(AC)
VBOOT(DC)
VBOOT(AC)
–0.3 to +6
V
V
27
2
30
2, 4
2
BOOT voltage
I/O voltage
32
36
V
V
2, 4
2, 5
Vpwm, Vdisble,
Vlsdbl, Vthwn
–0.3 to VCIN + 0.3
THWN/THDN current
Ithwn, Ithdn
Tj-opr
0 to 1.0
mA
°C
Operating junction temperature
Storage temperature
–40 to +150
–55 to +150
Tstg
°C
Notes: 1. Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110C.
2. Rated voltages are relative to voltages on the CGND and PGND pins.
3. For rated current, (+) indicates inflow.
4. The specification values indicated "AC" are limited within 10 ns.
5. VCIN + 0.3 V < 6 V
Safe Operating Area
45
40
35
30
25
20
VOUT = 1.3 V
15
VIN = 12 V
10
5
VCIN = 5 V
L = 0.45 μH
Fsw = 1 MHz
0
0
25
50
75
100
125
150
175
PCB Temperature (°C)
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 4 of 15
R2J20656ANP
Preliminary
Note
Recommended Operating Condition
Item
Symbol
Rating
4.5 to 22
4.5 to 5.5
Units
Input voltage
VIN
VCIN & VDRV
V
V
Supply voltage & Drive voltage
Electrical Characteristics
(Ta = 25°C, VCIN = 5 V, VDRV = 5 V, VSWH = 0 V, unless otherwise specified)
Item
Symbol
VH
Min
4.1
3.6
—
Typ
4.3
3.8
0.5
49
Max
4.5
4.0
—
Units
V
Test Conditions
Supply
VCIN start threshold
VCIN shutdown threshold
UVLO hysteresis
VL
V
dUVL
ICIN
V
VH – VL
VCIN operating current
—
—
mA
fPWM = 1 MHz,
Ton_pwm = 120 ns
VCIN disable current
ICIN-DISBL
—
—
150
A
DISBL# = 0 V,
PWM = ZCD_EN# = Open
PWM
input
PWM input high level
PWM input low level
PWM input resistance
PWM input tri-state range
Shutdown hold-off time
Enable level
VH-PWM
VL-PWM
RIN-PWM
VIN-tri
4.0
—
—
—
—
0.8
25
V
V
5.0 V PWM interface
6.5
1.5
—
12.5
—
k
V
PWM = 1 V
3.2
—
5.0 V PWM interface
1
tHOLD-OFF
VENBL
*
150
—
ns
V
DISBL#
input
2.0
—
—
Disable level
VDISBL
—
0.8
5.0
1.0
—
V
Input current
IDISBL
—
2.0
0.5
—
A
k
V
DISBL# = 1 V
1
THDN on resistance
RTHDN
*
0.2
2.0
—
DISBL# = 0.2 V
ZCD_EN# ZCD disable level
ZCD enable level
Vzcddisbl
Vzcden
—
0.8
–12
130
—
V
Input current
Izcden
–52
100
—
–25
115
15
A
°C
°C
k
A
°C
ZCD_EN# = 1 V
1
Thermal
warning
Warning temperature
Temperature hysteresis
THWN on resistance
THWN leakage current
Shutdown temperature
TTHWN
*
Driver IC temperature
1
THYS
RTHWN
ILEAK
Tstdn *1
*
1
*
0.2
—
0.5
—
1.0
1.0
—
THWN = 0.2 V
THWN = 5 V
Thermal
130
150
Driver IC temperature
shutdown
Note: 1. Reference values for design. Not 100% tested in production.
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 5 of 15
R2J20656ANP
Preliminary
Typical Application
4.5 to 22 V
+5 V
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20656
VSWH
ANP
ZCD_EN#
PGND
GL
PWM
CGND
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20656
VSWH
ANP
ZCD_EN#
PGND
GL
PWM
CGND
PWM1
+1.3 V
PWM2
PWM
Control
PWM3
Circuit
VCIN VDRV BOOT GH
PWM4
THWN
VIN
DISBL# R2J20656
VSWH
ANP
Power GND Signal GND
ZCD_EN#
PGND
GL
PWM
CGND
VCIN VDRV BOOT GH
THWN
VIN
DISBL# R2J20656
VSWH
ANP
ZCD_EN#
PGND
GL
PWM
CGND
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 6 of 15
R2J20656ANP
Preliminary
Pin Connection
+5 V
0.1 μF
1.0 μF
CGND
ZCD_EN#able Signal INPUT
VIN
(4.5 to 22 V)
CGND
10
9
8
7
6
5
4
3
2
1
PWM
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
PWM INPUT
10 μF × 4
DISBL#
THWN
VIN
CGND
PAD
PAD
PGND
10 kΩ
VIN
CGND
GL
+5 V
VSWH
PGND
10 kΩ
R2J20656ANP
VSWH
+5 V
VSWH
PAD
Thermal Shutdown
Thermal Warning
21 22 23 24 25 26 27 28 29 30
0.45 μH
Vout
PGND
PGND
Power GND Signal GND
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 7 of 15
R2J20656ANP
Preliminary
Test Circuit
IIN
A
A
Vinput
Vcont
VIN
V
ICIN
VCIN
V
VCIN
BOOT
VIN
DISBL#
R2J20656ANP
VDRV
VSWH
ZCD_EN#
Electric
load
PWM
5 V pulse
IO
PGND
CGND
GH
GL
Note: PIN = IIN × VIN + ICIN × VCIN
POUT = IO × VO
Average Output Voltage
VO
Averaging
circuit
V
Efficiency = POUT / PIN
PLOSS(DrMOS) = PIN – POUT
Ta = 27°C
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 8 of 15
R2J20656ANP
Preliminary
Typical Data
Power Loss vs. Output Current
VIN = 12 V
VCIN = VDRV = 5 V
VOUT = 1.3 V
Power Loss vs. Input Voltage
9
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VCIN = VDRV = 5 V
VOUT = 1.3 V
PWM = 600 kHz
L = 0.45 μH
IOUT = 25 A
8
7
6
5
4
3
2
1
0
f
f
PWM = 600 kHz
L = 0.45 μH
0
5
10
15
20
25
30
35
4
6
8
10 12 14 16 18 20 22
Input Voltage (V)
Output Current (A)
Power Loss vs. Output Voltage
Power Loss vs. Switching Frequency
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VIN = 12 V
VCIN = VDRV = 5 V
PWM = 600 kHz
L = 0.45 μH
IOUT = 25 A
VIN = 12 V
VCIN = VDRV = 5 V
VOUT = 1.3 V
L = 0.45 μH
f
IOUT = 25 A
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
250
500
750
1000
1250
Output Voltage (V)
Switching Frequency (kHz)
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 9 of 15
R2J20656ANP
Preliminary
Power Loss vs. Output Inductance
VIN = 12 V
VCIN = VDRV = 5 V
VOUT = 1.3 V
Power Loss vs. VCIN
1.7
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VIN = 12 V
VOUT = 1.3 V
PWM = 600 kHz
L = 0.45 μH
IOUT = 25 A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
f
f
PWM = 600 kHz
IOUT = 25 A
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
4.5
5.0
5.5
6.0
Output Inductance (μH)
VCIN = VDRV (V)
Average ICIN vs. Switching Frequency
70
VIN = 12 V
VCIN = VDRV = 5 V
VOUT = 1.3 V
L = 0.45 μH
60
50
40
30
20
10
IOUT = 0 A
250
500
750
1000
1250
Switching Frequency (kHz)
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 10 of 15
R2J20656ANP
Preliminary
Description of Operation
The DrMOS multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a
single QFN package. Since the parasitic inductance between each chip is extremely small, the module is highly suitable
for use in buck converters to be operated at high frequencies. The control timing between the high-side MOS FET, low-
side MOS FET, and driver is optimized so that high efficiency can be obtained at low output-voltage.
VCIN & DISBL#
The VCIN pin is connected to the UVL (under-voltage lockout) module, so that the driver is disabled as long as VCIN
is 4.3 V or less. On cancellation of UVL, the driver remains enabled until the UVL input is driven to 3.8 V or less. The
signal on pin DISBL# also enables or disables the circuit.
Voltages from –0.3 V to VCIN can be applied to the DISBL# pin, so on/off control by a logic IC or the use of a resistor,
etc., to pull the DISBL# line up to VCIN are both possible.
VCIN
DISBL#
Driver State
Disable (GL, GH = L)
Disable (GL, GH = L)
Active
L
L
H
H
H
H
Open
Disable (GL, GH = L)
The pulled-down MOS FET, which is turned on when internal IC temperature becomes over thermal shutdown level, is
connected to the DISBL# pin. The detailed function is described in THDN section.
PWM & ZCD_EN#
The PWM pin is the signal input pin for the driver chip. The input-voltage range is –0.3 V to (VCIN + 0.3 V). When the
PWM input is high, the gate of the high-side MOS FET (GH) is high and the gate of the low-side MOS FET (GL) is
low.
PWM
GH
L
GL
H
L
H
H
L
The ZCD_EN# pin is the Zero Current Detection Operation Enable pin for "Diode Emulation Mode (DEM)" when
ZCD_EN# is low. This function improves light load efficiency by preventing negative inductor current from output
capacitor. Driver IC monitors inductor current and when inductor current crosses zero, driver IC turn off Low side MOS
FET automatically.
Figure 1.1 shows the Typical high side and low side gate switching and Inductor current (IL) during Continuous
Conduction Mode (CCM), and figure 1.2 shows DEM when asserting Zero Current Detection Enable signal.
ZCD_EN# pin is internally pulled up to VCIN with 160 k resistor. When Zero current detection function is not used,
keep this pin open or pulled up to VCIN.
CCM Operation (ZCD_EN# = "H" or Open mode)
IL
PWM
GH
GL
Figure 1.1 Typical Signals during CCM
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 11 of 15
R2J20656ANP
Preliminary
DEM Operation (ZCD_EN# = "L" in Light load condition)
IL
0 A
PWM
GH
GL
Figure 1.2 Typical Signals during DEM
The PWM input is TTL level and has hysteresis. When the signal route from the control IC is high impedance, the tri-
state function turns off the high- and low-side MOS FETs. This function operates when the PWM input signal stays in
the input hysteresis window for 150 ns (typ.). After the tri-state mode has been entered and GH and GL have become
low, a PWM input voltage of 4.0 V or more is required to make the circuit return to normal operation.
150 ns (tHOLD-OFF
)
150 ns (tHOLD-OFF)
3.2 V
1.5 V
PWM
GH
GL
150 ns (tHOLD-OFF
)
150 ns (tHOLD-OFF)
3.2 V
1.5 V
PWM
GH
GL
Figure 2 PWM Shutdown-Hold Time Signal
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 12 of 15
R2J20656ANP
Preliminary
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal
operation; after the PWM input signal has stayed in the hysteresis window for 150 ns (typ.) and the tri-state detection
signal has been driven high, the transistor M1 is turned off.
When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is
asserted high signal, M1 becomes ON and shifts to normal operation.
VCIN
M1
14.5 k
Tri-state
PWM Pin
detection signal
Input
Logic
To internal control
12.5 k
Figure 3 Equivalent Circuit for the PWM-pin Input
THWN & THDN
This device has two level thermal detection, one is thermal warning and the other is thermal shutdown function.
This Thermal Warning feature is the indication of the high temperature status.
THWN is an open drain logic output signal and need to connect a pull-up resistor (ex.51 k) to THWN for Systems
with the thermal warning implementation.
When the chip temperature of the internal driver IC becomes over 115°C, Thermal warning function operates.
This signal is only indication for the system controller and does not disable DrMOS operation.
When thermal warning function is not used, keep this pin open.
Thermal
warning
"H"
Normal
THWN output
Logic Level
operating
"L"
TIC (°C)
100 115
Figure 4 THWN Trigger Temperature
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 13 of 15
R2J20656ANP
Preliminary
THDN is an internal thermal shutdown signal when driver IC becomes over 150°C.
This function makes High Side MOS FET and Low Side MOS FET turn off for the device protection from abnormal
high temperature situation and at the same time DISBL# pin is pulled low internally to give notice to the system
controller. Once thermal shutdown function operates, driver IC keeps DISBL# pin pulled low until VCIN becomes
under UVL level (3.8 V).
Figure 5 shows the example of two types of DISBL# connection with the system controller signal.
Driver IC Temp.
< 150°C
> 150°C
Driver Chip Status
Enable (GL, GH = "Active")
Shutdown (GL, GH = "L")
5 V
10 k
To Internal
Logic
To Internal
Logic
DISBL#
DISBL#
10 k
2 μA
2 μA
To shutdown signal
ON/OFF signal
Thermal
Shutdown
Detection
Thermal
Shutdown
Detection
Figure 5.1 THDN Signal to the System Controller
Figure 5.2 ON/OFF Signal from the System Controller
MOS FET
The MOS FETs incorporated in R2J20656ANP are highly suitable for synchronous-rectification buck conversion. For
the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the
low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 14 of 15
R2J20656ANP
Preliminary
Package Dimensions
JEITA Package Code
RENESAS Code
Previous Code
—
MASS[Typ.]
—
P-HVQFN40-p-0606-0.50
PVQN0040KE-A
HD
D
HD/2
D /2
4-C0.50
B
B
1pin
1pin
INDEX
40
40
2.2
C0.3
A
0.7
0.2
1.95
Dimension in Millimeters
Min Nom Max
5.95 6.00 6.05
5.95 6.00 6.05
Reference
Symbol
2-A section
CAV No.
Die No.
D
E
2.05
1.95
A2 0.87 0.89 0.91
f
—
—
0.20
ZD
A
0.865 0.91 0.95
X 4
e
X 4
t
S AB
A1 0.005 0.02 0.04
0.17 0.22 0.27
b1 0.16 0.20 0.24
0.50
Lp 0.40 0.50 0.60
f
S AB
b
b
x
S AB
y1
S
e
—
—
L1
x
y
y1
t
—
—
—
—
—
—
—
—
0.05
0.05
0.20
0.20
S
HD 6.15 6.20 6.25
HE 6.15 6.20 6.25
y
S
Lp
ZD
ZE
—
—
0.75
0.75
—
—
L1 0.06 0.10 0.14
c1 0.17 0.20 0.23
c2 0.17 0.22 0.27
Ordering Information
Part Name
Quantity
Shipping Container
Taping Reel
R2J20656ANP#G0
2500 pcs
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
Page 15 of 15
Notice
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the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
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