RD16UMB [RENESAS]
16V, 0.15W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ULTRA SUPER MINIMOLD PACKAGE-2;型号: | RD16UMB |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 16V, 0.15W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ULTRA SUPER MINIMOLD PACKAGE-2 测试 光电二极管 |
文件: | 总10页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
ZENER DIODES
RD2.0UM to RD39UM
ZENER DIODES
2PIN ULTRA SUPER MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
Type RD2.0UM to RD39UM Series are 2-pin
Ultra Super Mini Mold Package zener diodes
possessing an allowable power dissipation of 150
mW.
(Unit: mm)
FEATURES
• Sharp Breakdown characteristics
• VZ; Applied E24 standard
Cathode
Indication
APPLICATIONS
Circuits for Constant Voltage, C
Waveform clipper, Surge abs
MAXIMUM RATINGS (°C)
Power Dissipation
P
150 mW
100 mA
Forward Current
IF
Reverse Surge Power
Junction Temperature
Storage Temperature
PRSM
Tj
85 W (at t = 10 µs/1 pulse) See Fig. 6.
150 °C
Tstg
–55 to +155 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D13562EJ2V0DS00 (2nd edition)
(Previous No. DC-2136)
Date Published March 1999 N CP(K)
Printed in Japan
1993
©
RD2.0UM to RD39UM
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Zener Voltage
Reverse Current
Dynamic Impedance
(Ω)Note 2
Type
Note 1
VZ (V)
IR (µA)
Z
Z
Class
Number
MIN.
MAX.
IZ(mA)
MAX.
IZ(mA)
MAX.
VR(V)
RD2.0UM
RD2.2UM
RD2.4UM
B
B
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.00
4.00
4.14
4.27
4.40
4.40
4.53
4.67
4.82
4.82
4.9
6
6.24
6.44
6.44
6.62
6.83
7.03
7.03
7.25
7.49
7.73
7.73
7.98
8.25
8.53
8.53
8.81
9.12
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.49
4.22
4.35
4.49
4.92
4.63
4
5
6.14
6.35
6.55
7.17
6.76
6.96
7.17
7.87
7.39
7.63
7.87
8.67
8.13
8.39
8.67
9.58
8.96
9.26
9.58
5
5
5
100
100
100
5
5
5
120
120
120
0.5
0.7
1.0
B
B
RD2.7UM
RD3.0UM
RD3.3UM
RD3.6UM
RD3.9UM
B1
B2
B
5
5
5
5
5
110
120
130
130
5
5
5
120
50
1.0
1.0
1.0
1.0
1.0
B1
B2
B
B1
B2
B
20
B1
B2
B
10
B1
B2
B
B1
B2
B3
B
RD4.3UM
RD4.7UM
RD5.1UM
RD5.6UM
RD6.2UM
RD6.8UM
RD7.5UM
RD8.2UM
RD9.1UM
5
5
5
5
5
5
130
80
5
5
5
5
5
5
5
5
10
10
5
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
5
B1
B2
B3
B
50
2
B1
B2
B3
B
30
2
B1
B2
B3
B
30
2
B1
B2
B3
B
30
2
B1
B2
B3
30
2
Data Sheet D13562EJ2V0DS00
2
RD2.0UM to RD39UM
Zener Voltage
Reverse Current
Dynamic Impedance
(Ω)Note 2
Type
Note 1
VZ (V)
IR (µA)
Z
Z
Class
Number
MIN.
MAX.
IZ(mA)
5
MAX.
30
IZ(mA)
MAX.
2
VR(V)
7.0
B
B1
B2
B3
B
9.42
9.42
10.58
9.90
RD10UM
RD11UM
RD12UM
RD13UM
RD15UM
RD16UM
RD18UM
RD20UM
RD22UM
RD24UM
5
5
5
5
5
5
5
5
5
9.74
10.24
10.58
11.60
10.92
11.26
11.60
12.64
11.94
12.28
12.64
14.00
13.07
13.53
14.00
15.56
14.50
15.02
15.56
17.14
16.07
16.58
17
4
.55
23.25
25.66
24.03
24.85
25.66
28.90
32.00
35.00
38.00
41.00
10.08
10.40
10.40
10.72
11.06
11.38
11.38
11.69
12.04
12.43
12.43
12.87
13.33
13.80
13.80
14.30
14.81
15.31
15.31
15.78
16.30
16.89
16.89
17.51
18.1
1
65
4.45
25.10
28.00
31.00
34.00
37.00
B1
B2
B3
B
5
5
5
5
5
5
5
30
30
35
45
50
55
60
2
2
2
2
2
2
2
2
2
8.0
9.0
10
11
12
13
15
17
19
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B1
B2
B3
B
RD27UM
RD30UM
RD33UM
RD36UM
RD39UM
2
2
2
2
2
70
80
2
2
2
2
2
2
2
2
2
2
21
23
25
27
30
B
B
80
B
90
B
100
Notes 1. Tested with pulse (40 ms)
2. ZZ is measured at IZ given a very small A.C. current signal.
Data Sheet D13562EJ2V0DS00
3
RD2.0UM to RD39UM
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 P–TA RATING
200
150
100
50
30 × 30 × 0.75
P.C.B. (Ceramic)
20 × 15 × 0.75
P.C.B. (Ceramic)
10 × 7.5 × 0.75
P.C.B. (Ceramic)
10 × 7.5 × 0.75
P.C.B. (Glass Epoxy)
0
50
100
0
TA – Ambient T
Fig. 2 IZ–o e)
RD2.2UM
RD2.0UM
RD6.8UM
RD7.5UM
RD8.
RD2.4UM
100 m
10 m
1 m
m
100 m
RD2.7UM
RD3.0UM
RD3.3UM
RD3.6UM
RD3.9UM
RD11UM
RD12UM
RD13UM
RD15UM
RD18UM
RD16UM
10 m
1 m
RD10UM
RD20UM
100
10
1
µ
µ
µ
100
10
1
µ
µ
µ
100
10
1
µ
µ
µ
100 n
10 n
1 n
100 n
10 n
1 n
100 n
10 n
1 n
RD4.3UM
RD4.7UM
RD5.1UM
RD5.6UM
RD6.2UM
0
1
2
3
4
5
6
7
8
9
10
0
7
8
9 10 11 12 13 14 15
0 12 13 14 15 16 17 18 19 20
VZ – Zener Voltage – V
(a)
VZ – Zener Voltage – V
(b)
VZ – Zener Voltage – V
(c)
Data Sheet D13562EJ2V0DS00
4
RD2.0UM to RD39UM
100 m
10 m
1 m
100 m
10 m
1 m
RD24UM
RD36UM
RD33UM
RD22UM
RD27UM
RD39UM
RD30UM
100
10
1
µ
µ
µ
100
10
1
µ
µ
µ
100 n
10 n
1 n
100 n
0 18 20 22 24 26 28 30
0
35
40
VZ – Zener Voltage – V
(d)
– Zener Voltage – V
(e)
Fig. 3 γZ–VZ CHARA
Fig. 4 ZZ–IZ CHARACTERISTICS
1000
100
0.1
32
24
16
8
RD2.0UM
RD2.4UM
0.08
RD3.0UM
RD3.9UM
0.06
0.04
0.02
0
RD5.6UM
RD4.7UM
RD5.1UM
RD39UM
RD24UM
RD20UM
RD15UM
0
RD10UM
10
RD7.5UM
–0.02
–8
–0.04
–0.06
–16
–24
1
4
8
12 16 20 24 28 32 36 40
VZ – Zener Voltage – V
0.1
1
10
100
IZ – Zener Current – mA
Data Sheet D13562EJ2V0DS00
5
RD2.0UM to RD39UM
Fig. 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC
1000
100
10
833 °C/W
P.C.B. (Glass Epoxy)
(30mm×30 mm×1.6mm)
1
1m
10m
100m
1
t – Time – s
Fig. 6 SURGE RE
1000
TA = 25 °C
Repetitive
tT
100
10
1
1µ
10
µ
100
µ
1m
10m
100m
t – Pulse Width – s
Data Sheet D13562EJ2V0DS00
6
RD2.0UM to RD39UM
[MEMO]
Data Sheet D13562EJ2V0DS00
7
RD2.0UM to RD39UM
[MEMO]
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patentspyrights or other intellectual
property rights of third parties by or arising from use of a device describer any other liability arising
from use of such device. No license, either express, implied or otherwise, iany patents, copyrights
or other intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information ied for illustrative
purposes in semiconductor product operation and application n of these circuits,
software, and information in the design of the customer's eqr the full responsibility
of the customer. NEC Corporation assumes no responsiby the customer or third
parties arising from the use of these circuits, software
• While NEC Corporation has been making continuous ty of its semiconductor devices,
the possibility of defects cannot be eliminated ef damage or injury to persons or
property arising from a defect in an NEC semrs must incorporate sufficient safety
measures in its design, such as redundanci-failure features.
• NEC devices are classified into the follo
"Standard", "Special", and "Specific". applies only to devices developed based on a
customer designated “quality assuc application. The recommended applications of
a device depend on its quality grtomers must check the quality grade of each device
before using it in a particular
Standard: Computers, cations equipment, test and measurement equipment,
audio anelectronic appliances, machine tools, personal electronic
equipmen
Special: Transportatiomobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crsafety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace uipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98.8
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