RD22SB-T1 [RENESAS]
Zener Diode, 22V V(Z), 5.54%, 0.2W, Silicon, Unidirectional, SUPERMINI-2;
| 型号： | RD22SB-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Zener Diode, 22V V(Z), 5.54%, 0.2W, Silicon, Unidirectional, SUPERMINI-2 测试 光电二极管 |
| 文件： | 总12页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
ZENER DIODES
RD2.0S to RD120S
ZENER DIODES
200 mW 2 PINS SUPER MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
Type RD2.0S to RD120S Series are 2 PIN Super Mini
Mold Package zener diodes possessing an allowable power
dissipation of 200 mW.
(in millimeter)
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
•
•
Sharp Breakdown characteristic.
Vz: Applied E24 standard.
2.5±0.15
1.7±0.1
APPLICATIONS
Circuit for Constant Voltage, Constant Current, Wave form
Clipper, Surge absorber, etc.
Cathode
Indication
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
200 mW
Forward Current
IF
100 mA
Reverse Surge Power
Junction Temperature
Storage Temperature
PRSM
Tj
85 W (at t=10 µs/1 pulse) Show Fig. 12
150 °C
Tstg
–55 to +150 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D11444EJ3V0DS00 (3rd edition)
Date Published March 1999 N CP(K)
Printed in Japan
1995
©
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Class
Zener Voltage
Dynamic
Reverse Current
Note 1
Note 2
Vz (V)
Impedance Zz (Ω)
IR (µA)
MIN.
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.00
4.00
4.14
4.27
4.40
4.40
4.53
4.67
4.82
4.82
4.96
5.12
5.29
5.29
5.47
5.65
5.84
5.84
6.04
6.24
MAX.
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.49
4.22
4.35
4.49
4.92
4.63
4.77
4.92
5.39
5.06
5.22
5.39
5.94
5.57
5.75
5.94
6.55
6.14
6.35
6.55
Iz (mA)
MAX.
100
100
100
110
Iz (mA)
MAX.
120
120
120
120
VR (V)
0.5
RD2.0S
B
5
5
5
5
5
RD2.2S
RD2.4S
RD2.7S
B
5
5
5
0.7
B
1.0
B
1.0
B1
B2
B
RD3.0S
RD3.3S
RD3.6S
RD3.9S
RD4.3S
5
5
5
5
5
120
130
130
130
130
5
5
5
5
5
50
20
10
10
10
1.0
1.0
1.0
1.0
1.0
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B3
B
RD4.7S
RD5.1S
RD5.6S
RD6.2S
5
5
5
5
130
130
80
5
5
5
5
10
1.0
1.5
2.5
3.0
B1
B2
B3
B
5
B1
B2
B3
B
5
B1
B2
B3
B
50
2
B1
B2
B3
Data Sheet D11444EJ3V0DS00
2
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Class
Zener Voltage
Dynamic
Impedance Zz (Ω)
Reverse Current
Note 1
Note 2
Vz (V)
IR (µA)
MIN.
6.44
MAX.
7.17
Iz (mA)
5
MAX.
30
Iz (mA)
MAX.
2
VR (V)
3.5
RD6.8S
B
B1
B2
B3
B
5
5
5
5
5
5
5
6.44
6.76
6.62
6.96
6.83
7.17
RD7.5S
RD8.2S
RD9.1S
RD10S
RD11S
RD12S
7.03
7.87
5
5
5
5
5
5
30
30
30
30
30
35
2
2
2
2
2
2
4.0
5.0
6.0
7.0
8.0
9.0
B1
B2
B3
B
7.03
7.39
7.25
7.63
7.49
7.87
7.73
8.67
B1
B2
B3
B
7.73
8.13
7.98
8.39
8.25
8.67
8.53
9.58
B1
B2
B3
B
8.53
8.96
8.81
9.26
9.12
9.58
9.42
10.58
9.90
B1
B2
B3
B
9.42
9.74
10.24
10.58
11.60
10.92
11.26
11.60
12.64
11.94
12.28
12.64
14.00
15.56
17.14
19.08
21.14
23.25
25.66
28.90
32.00
35.00
38.00
10.08
10.40
10.40
10.72
11.06
11.38
11.38
11.69
12.04
12.43
13.80
15.31
16.89
18.80
20.81
22.86
25.10
28.00
31.00
34.00
B1
B2
B3
B
B1
B2
B3
B
RD13S
RD15S
RD16S
RD18S
RD20S
RD22S
RD24S
RD27S
RD30S
RD33S
RD36S
5
5
5
5
5
5
5
2
2
2
2
35
40
40
45
50
55
60
70
80
80
90
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
10
11
12
13
15
17
19
21
23
25
27
B
B
B
B
B
B
B
B
B
B
Data Sheet D11444EJ3V0DS00
3
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Class
Zener Voltage
Dynamic
Reverse Current
Note 1
Note 2
Vz (V)
Impedance Zz (Ω)
IR (µA)
MIN.
37.00
40.00
44.00
48.00
53.00
58.00
64.00
70.00
77.00
85.00
94.00
104.0
114.0
MAX.
41.00
45.00
49.00
54.00
60.00
66.00
72.00
79.00
87.00
96.00
106.0
116.0
126.0
Iz (mA)
MAX.
100
130
150
180
180
200
250
300
300
700
700
800
900
Iz (mA)
MAX.
2
VR (V)
30
RD39S
B
B
B
B
B
B
B
B
B
B
B
B
B
2
2
2
2
2
2
2
2
2
1
1
1
1
2
RD43S
RD47S
RD51S
RD56S
RD62S
RD68S
RD75S
RD82S
RD91S
RD100S
RD110S
RD120S
2
2
2
2
2
2
2
2
1
1
1
1
2
33
2
36
1
39
1
43
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
47
52
57
63
69
76
84
91
Note 1. Vz is tested with pulsed (40 ms).
2. Zz is measured at Iz by given a very small A.C. current signal.
Data Sheet D11444EJ3V0DS00
4
RD2.0S to RD120S
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
200
150
100
50
30×30×1.6
P. C. B. (Glass Epoxy)
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature - °C
Fig. 2 ZENER CURRENT vs. ZENER VOLTAGE
Fig. 3 ZENER CURRENT vs. ZENER VOLTAGE
RD2.2S
RD6.8S
RD2.0S
T
A
= 25 °C
RD7.5S
RD2.4S
TYP.
RD8.2S
100 m
100 m
10 m
1 m
RD2.7S
RD3.0S
RD3.3S
RD3.6S
RD3.9S
RD9.1S
RD11S
RD10S
RD12S
RD13S
10 m
1 m
100
10
1
µ
µ
µ
100 µ
µ
µ
10
1
100 n
100 n
RD4.3S
RD4.7S
RD5.1S
RD5.6S
10 n
1 n
10 n
1 n
RD6.2S
0
1
2
3
4
5
6
7
8
9
10
0
7
8
9
10 11 12 13 14 15
VZ - Zener Voltage - V
Vz - Zener Voltage - V
Data Sheet D11444EJ3V0DS00
5
RD2.0S to RD120S
Fig. 4 ZENER CURRENT vs. ZENER VOLTAGE
Fig. 5 ZENER CURRENT vs. ZENER VOLTAGE
T = 25 °C
A
T
A
= 25 °C
TYP
TYP
100 m
10 m
1 m
100 m
10 m
1 m
RD27S
RD24S
RD30S
RD15S
RD16S
RD22S
RD18S
RD20S
100 µ
100
10
µ
µ
µ
10
1 µ
1 µ
100 n
100 n
10 n
1 n
10 n
1 n
0
16 18 20 22 24 26 28 30 32
Vz - Zener Voltage - V
0
12 13 14 15 16 17 18 19 20
Vz - Zener Voltage - V
Fig. 6 ZENER CURRENT vs. ZENER VOLTAGE
Fig. 7 ZENER CURRENT vs. ZENER VOLTAGE
T
A
= 25 °C
TA = 25 °C
TYP
TYP
100 m
10 m
1 m
100 m
RD68S
RD62S
RD56S
RD47S
RD82S
RD91S
RD100S
RD110S
RD120S
RD33S
RD36S
RD39S
RD75S
10 m
1 m
µ
RD43S
100 µ
100
µ
µ
µ
10
1
10
1 µ
100 n
10 n
1 n
100 n
10 n
1 n
0 30
60
90
120
0 25
30
35
40
Vz - Zener Voltage - V
Vz - Zener Voltage - V
Data Sheet D11444EJ3V0DS00
6
RD2.0S to RD120S
Fig. 8 DYNAMIC IMPEDANCE vs. ZENER CURRENT
1000
100
RD2.0S
RD2.4S
RD3.0S
RD3.9S
RD4.7S
RD5.1S
RD5.6S
RD39S
RD24S
RD20S
RD15S
RD10S
10
1
RD7.5S
0.1
1
10
100
I
Z
- Zener Current - mA
Fig. 9 ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Fig. 10 ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
0.12
0.11
0.10
140
TYP.
40
0.1
120
%V/°C
32
24
16
8
0.08
0.06
%/°C
100
80
60
40
20
0.04
0.02
0
%mV/°C
0.09
0.08
0.07
mV/°C
0
–8
–0.02
–16
–0.04
–0.06
RD43S to RD120S
RD2.0S to RD39S
–24
0
40 50 60 70 80 90 100 110 120
Vz - Zener Voltage - V
0
4
8
12 16 20 24 28 32 36 40
- Zener Voltage - V
V
Z
γ
γ
Data Sheet D11444EJ3V0DS00
7
RD2.0S to RD120S
Fig. 11 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
5000
1000
RD[ ]S
100
P.C.B (Glass Epoxy)
10
5
(30mm × 30mm × 1.6mm)
1m
10m
100m
1
10
100
t - Time - s
Fig. 12 SURGE REVERSE POWER RATINGS
1 000
T
A
= 25 °C
Repetitive
t
T
100
10
1
µ
1
µ
10
µ
100
1 m
- Pulse Width - s
10 m
100 m
tT
Data Sheet D11444EJ3V0DS00
8
RD2.0S to RD120S
[MEMO]
Data Sheet D11444EJ3V0DS00
9
RD2.0S to RD120S
[MEMO]
Data Sheet D11444EJ3V0DS00
10
RD2.0S to RD120S
[MEMO]
Data Sheet D11444EJ3V0DS00
11
RD2.0S to RD120S
[MEMO]
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights
or other intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated “quality assurance program“ for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98.8
相关型号：
RD22SLN
21.64V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SUPER MINIMOLD PACKAGE-2
RENESAS
RD22SLN-T1
Zener Diode, 22V V(Z), 5.45%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2
NEC
©2020 ICPDF网 联系我们和版权申明